Class 257/148 - Having impurity doping for gain reduction

Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: Subject matter wherein the regenerative switching device
No. of patents: 34
Last issue date: 09/30/2008

Number	Title	Issue Date
7429760	Variable mask device for crystallizing silicon layer Disclosed are a variable mask device for crystallizing a silicon layer capable of controlling a width and a length of an opening, and a method for crystallizing a silicon using the variable mask device. The variable mask device has a frame with an opening whose widt...	09/30/2008
7233031	Vertical power semiconductor component A vertical power semiconductor component, e.g. a diode or an IGBT, in which there are formed, on the rear side of a substrate, a rear side emitter or a cathode emitter and, over that, a rear side metal layer that at least partly covers the latter, is defined by the ...	06/19/2007
7135367	Manufacturing method of semiconductor device A silicon oxide film as an insulating film is accumulated so as to cover a whole surface of a silicon substrate including a surface of a resistance element by, for example, a thermal CVD method, just after a resist pattern is removed. This silicon oxide film is proc...	11/14/2006
6703642	Silicon carbide (SiC) gate turn-off (GTO) thyristor structure for higher turn-off gain and larger voltage blocking when in the off-state A SiC gate turn-off (GTO) thyristor that exhibits improved greatly performance includes a p-type anode region, a n-type gated base region positioned beneath the anode region, a n-type drift region positioned beneath the gated base region and doped to a lo...	03/09/2004
6617641	High voltage semiconductor device capable of increasing a switching speed An IGBT has a punch-through structure including an n+ buffer layer. It includes a p- low concentration layer formed between the n+ buffer layer and a p+ drain layer. Owing to the low concentration layer, the dra...	09/09/2003
6550949	Systems and components for enhancing rear vision from a vehicle A vehicle system is disclosed that includes a vehicle lamp assembly including a plurality of LEDs that emit white light so as to function as an illuminator light. The lamp assembly also may include a plurality of LEDs that emit colored light, such as red ...	04/22/2003
6512251	Semiconductor switching element that blocks in both directions The semiconductor switching element blocks in both directions between a first and a second load terminal. The switching element has a field effect transistor and a bipolar transistor. The field effect transistor has a controlled gate, a source connected t...	01/28/2003
6448588	Insulated gate bipolar transistor having high breakdown voltage in reverse blocking mode An insulated gate bipolar transistor having a high breakdown voltage in a reverse blocking mode and a method for fabricating the same are provided. The insulated gate bipolar transistor includes a relatively low-concentration lower buffer layer and a rela...	09/10/2002
6208447	Optical receiver The present invention provides an improved optical receiver superior to conventional ones in photodetection sensitivity and capable of providing an increased receiving range for optical remote control receivers. A p-type semiconductor substrate and a ligh...	03/27/2001
6043516	Semiconductor component with scattering centers within a lateral resistor region A semiconductor component has a semiconductor body with at least one integrated lateral resistor. The lateral resistor is formed with a dopant concentration in the resistor region. The resistor region is located in a region which is accessible from the su...	03/28/2000
5981868	Thin-film solar cell comprising thin-film light absorbing layer of chalcopyrite multi-element compound semiconductor A solar cell with a heightened open-circuit voltage and improved junction quality of the interface between an interfacial layer (or buffer layer) and a thin-film light absorbing layer is disclosed. A thin-film solar cell is fabricated on a glass substrate...	11/09/1999
5900652	Apparatus for the localized reduction of the lifetime of charge carriers, particularly in integrated electronic devices A method and apparatus for the localized reduction of the lifetime of charge carriers in integrated electronic devices. The method comprises the step of implanting ions, at a high dosage and at a high energy level, of a noble gas, preferably helium, in th...	05/04/1999
5757037	Power thyristor with MOS gated turn-off and MOS-assised turn-on The power thyristor of this invention has a cellular emitter structure. Each cell also has a FET assisted turn-on gate integrated into the cell. A turn-on gate voltage of one polarity is applied to a FET gate element that overlies the surface of the cell ...	05/26/1998
5682044	Reverse conducting thyristor with a planar-gate, buried-gate, or recessed-gate structure The present invention provides a reverse conducting (RC) thyristor of a planar-gate structure for low-and-medium power use which is relatively simple in construction because of employing a planar structure for each of thyristor and diode regions, permits ...	10/28/1997
5610415	Turn-off semiconductor component having amphoteric properties In turn-off semiconductor components such as GTO thyristors, the semiconductor body can be locally overheated and destroyed as a consequence of inhomogeneities. The anode-side emitter is therefore doped with additional substances that locally compensate t...	03/11/1997
5559346	Field-effect semiconductor device with increased breakdown voltage A field-effect semiconductor device for reducing on-state source-drain voltage and increasing breakdown voltage, has a one conductivity type semiconductor region, a source region of one conductivity type, a drain region, and gate regions of other conducti...	09/24/1996
5528058	IGBT device with platinum lifetime control and reduced gaw For IGBT, MCT or like devices, the substrate is formed with P+, N+ and N- layers and PN diffusions to define body and source regions in the N-layer and a MOS-gated channel at the upper surface. The N-layer is sized and doped (~1014 /cm3	06/18/1996
5466951	Controllable power semiconductor element with buffer zone and method for the manufacture thereof Controllable power semiconductor components such as, for example, IGBTs and thyristors are provided, which, compared to known components, have a relatively lightly doped n-buffer zone, a relatively flat p-emitter, and an n-base having a comparatively long...	11/14/1995
5393995	Semiconductor thyristor device with recess There is disclosed a semiconductor device wherein a p layer (7) is formed in an isolating portion (Z) and portions (1a, 1b) of an n-type base layer (1) lie on opposite sides of the p layer (7), the upper surfaces of the p layer (7) and the portions (1a, 1...	02/28/1995
5381026	Insulated-gate thyristor Disclosed herein is an insulated-gate thyristor comprising a base layer of a first conductivity type, having first and second major surfaces, a first main-electrode region of the first conductivity type, formed in the first major surface of the base layer...	01/10/1995
5352910	Semiconductor device with a buffer structure The present invention is directed to power semiconductor devices and, more particularly, to a semiconductor device with a static induction buffer structure which reduces the resistance of a buffer layer, enhances the injection efficiency of holes from the...	10/04/1994
4961053	Circuit arrangement for testing integrated circuit components A circuit arrangement is provided for testing circuit components which are formed as integrated circuits on a common base plate and operable at the base plate by way of common feed lines and input lines. In the circuit arrangement, a testing circuit and s...	10/02/1990
4782379	Semiconductor device having rapid removal of majority carriers from an active base region thereof at device turn-off and method of fabricating this device A semiconductor device comprising a bulk substrate and an epitaxial layer grown thereon attains the feature of rapid removal of majority carriers from an N-type active base region thereof, a function conventionally performed by anode shorts, through the i...	11/01/1988
4757025	Method of making gate turn off switch with anode short and buried base A GTO switch is provided in which the upper base layer (gate) is formed by a diffusion step. An epitaxial layer grown over the upper base layer contains cathode and gate diffusions which are separated by an undiffused gap. This "buried base" technique pro...	07/12/1988
4713679	Reverse blocking type semiconductor device A reverse blocking type semiconductor device capable of being rapidly turned off is disclosed in which a semiconductor substrate includes four semiconductor layers in a region sandwiched between a pair of principal surfaces in such a manner that adjacent ...	12/15/1987
4617583	Gate turn-off thyristor A gate turn-off thyristor has a first emitter layer having a P+ P- emitter structure which is in contact with an anode electrode and a second emitter layer having an N-type multi-emitter structure which is in contact with cathode ele...	10/14/1986
4609933	Gate turn-off thyristor having P⁺ gate and emitter A gate turn-off thyristor including N-type emitter regions (4) formed in part in the surface layer of a P-type base layer (3), and P+ layer regions (10) of a high impurity concentration formed immediately beneath gate electrodes (8) in the P-t...	09/02/1986
4605451	Process for making thyristor devices A governing factor of the switching characteristics of a thyristor device is base layer resistivity, for example in a gate turn-off device, to maximize load current it is preferably low but, the reverse breakdown voltage of the emitter-base junction is im...	08/12/1986
4517582	Asymmetrical thyristor with highly doped anode base layer region for optimized blocking and forward voltages A semiconductor component such as a four layer assymetrical thyristor having four zones of alternately opposite conductivity type, including a P emitter, an N base, a P base and an N emitter, wherein in the N base zone there is provided a stopping layer i...	05/14/1985
4502070	FET Controlled thyristor Controlled semiconductor switch with a semiconductor body containing a thyristor structure having a first zone of first conductivity type embedded in coplanar relationship in a second zone of second conductivity type; also containing a third zone of the f...	02/26/1985
4356503	Latching transistor A latching transistor is described having both high current capacity and high turn-off gain. A selectively shorted anode emitter provides a four-layer structure capable of sustaining current flow only under those portions of a cathode emitter adjacent int...	10/26/1982
4243999	Gate turn-off thyristor A gate turn-off thyristor which comprises a semiconductor body having at least four contiguous layers, namely, a first layer of a first conductivity type, a second layer lying continguous to the first layer and having a second conductivity type, a third l...	01/06/1981
4177478	Amplifying gate thyristor with gate turn-off (G.T.O.) The invention relates to an amplifying gate thyristor with gate turn-off (G.T.O.) for electric power switching. A P+ type conduction layer is disposed in the thickness of the base P1, forming a buried grate under the main emitter and penetrating down to a...	12/04/1979
4156248	Gate turn-off semiconductor controlled rectifier device with highly doped buffer region portion A gate turn-off silicon controlled rectifier comprises a four-layer regenerative portion and a four-layer buffer portion having reduced regenerative capability. The buffer portion is positioned such that when a turn-off pulse is applied to the device it i...	05/22/1979

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Class 257/148 - Having impurity doping for gain reduction