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| Number | Title | Issue Date |
| 7354781 | Method of manufacturing field emission device A method of manufacturing a field emission device (FED) using a photoresist for performing multi-patterning processes, whereby different structures can be multi-patterned using a single photoresist mask. The photoresist has a solubility to a solvent by post-exposure... | 04/08/2008 |
| 7332749 | Junction-gate type static induction thyristor and high-voltage pulse generator using such junction-gate type static induction thyristor A compact, inexpensive static induction thyristor (SIThy) which is less likely to be broken down at a high voltage rise-up rate during operation and which is used in a high-voltage pulse generator capable of generating a high-voltage short pulse is provided. Thickne... | 02/19/2008 |
| 7321138 | Planar diac The invention concerns an asymmetric diac comprising a highly-doped substrate (21) of a first type of conductivity, a lightly-doped epitaxial layer (22) of the second type of conductivity on the upper surface of the substrate (21), a highly-dope... | 01/22/2008 |
| 7301270 | Field emission display device having plurality of emitters with a common gate electrode An FED device includes an anode electrode formed on a substrate; a phosphor layer formed on the anode electrode; and field emission devices for emitting at least two electron beams onto the phosphor layer. An area where a fluorescent material is excited can be enlar... | 11/27/2007 |
| 7276778 | Semiconductor system functioning as thyristor in on-state, and as bipolar transistor in transient state or with overcurrent A semiconductor system includes a self arc-extinguishing device, and an IGBT that works as a thyristor when a current between a first terminal and a second terminal connected to a second well electrode is small, and as a bipolar transistor when that current is large... | 10/02/2007 |
| 7259440 | Fast switching diode with low leakage current A fast switching diode includes an n− layer having an upper surface and a lower surface and a first edge and a second edge, the second edge provided on an opposing side of the first edge. A converted region is provided proximate the upper surface of the n− layer... | 08/21/2007 |
| 7256131 | Method of controlling the critical dimension of structures formed on a substrate The present invention provides a method of patterning a substrate, the method including, inter alia, forming a multi-layered structure on the substrate formed from first, second and third materials. The first, second and third materials are exposed to an etch chemis... | 08/14/2007 |
| 7250628 | Memory devices and electronic systems comprising thyristors The invention includes SOI constructions containing one or more memory cells which include a transistor and a thyristor. In one aspect, a scalable GLTRAM cell provides DRAM-like density and SRAM-like performance. The memory cell includes an access transistor and a g... | 07/31/2007 |
| 7180152 | Process for resurf diffusion for high voltage MOSFET A starting wafer for high voltage semiconductor devices is formed by implanting arsenic into the top surface of a p type silicon substrate wafer to a depth of about 0.1 micron. A N type non-graded epitaxial layer is then grown atop the substrate without any diffusio... | 02/20/2007 |
| 7154177 | Semiconductor device with edge structure A semiconductor device has an edge termination region (15) having a plurality of trenches (17). Conductive material (20) and insulating material (19) is formed at the trenches, and surface implants (21) are formed on either side of... | 12/26/2006 |
| 7056753 | Field emission display with double gate structure and method of manufacturing therefor A field emission display with a double gate structure and a method of manufacturing therefor are provided. The field emission display includes a substrate, a cathode layer formed on the substrate, a gate insulating layer which is formed on the substrate and the cath... | 06/06/2006 |
| 7045830 | High-voltage diodes formed in advanced power integrated circuit devices A diode-connected lateral transistor on a substrate of a first conductivity type includes a vertical parasitic transistor through which a parasitic substrate leakage current flows. Means for shunting at least a portion of the flow of parasitic substrate leakage curr... | 05/16/2006 |
| 6995426 | Semiconductor device having vertical metal insulator semiconductor transistors having plural spatially overlapping regions of different conductivity type A semiconductor device includes a diffusion area formed in a semiconductor layer of a first conductive type. The diffusion area comprises first and second impurity diffusion areas of the first and second conductive types, respectively. The diffusion area has a first... | 02/07/2006 |
| 6972460 | Semiconductor device and manufacturing method thereof A semiconductor device including a drift layer of a first conductivity type formed on a surface of a semiconductor substrate. A surface of the drift layer has a second area positioned on an outer periphery of a first area. A cell portion formed in the first area inc... | 12/06/2005 |
| 6956334 | Field emission display having carbon-based emitters A field emission display includes a first substrate. At least one gate electrode is formed in a predetermined pattern on the first substrate. A plurality of cathode electrodes is formed in a predetermined pattern on the first substrate to form intersection regions w... | 10/18/2005 |
| 6930011 | Semiconductor device with a bipolar transistor, and method of manufacturing such a device A semiconductor device includes a preferably discrete bipolar transistor with a collector region, a base region, and an emitter region which are provided with connection conductors. A known means of preventing a saturation of the transistor is that the latter is pro... | 08/16/2005 |
| 6885079 | Methods and configuration to simplify connections between polysilicon layer and diffusion area An electronic device supported on a semiconductor substrate. The semiconductor device includes a diffusion area in the substrate and a polysilicon layer extending over the substrate and contacting the diffusion area. The electronic device further includes a conducti... | 04/26/2005 |
| 6847058 | Semiconductor device ON resistance and leakage current of a vertical power MOSFET are to be diminished. In a vertical high breakdown voltage MOSFET with unit MOSFETs (cells) arranged longitudinally and transversely over a main surface of a semiconductor substrate, the cells are made qua... | 01/25/2005 |
| 6727526 | Thyristor with recovery time voltage surge resistance A preferably asymetrical thyristor (1) with at least one driver stage (20) for amplifying a control current (I) fed into the cathodal base (16) of the thyristor, in which, in the driver stage, the transistor gain factors αnpn and α | 04/27/2004 |
| 6670650 | Power semiconductor rectifier with ring-shaped trenches A high-speed, soft-recovery semiconductor device that reduces leakage current by increasing the Schottky ratio of Schottky contacts to pn junctions. In one embodiment of the present invention, an n- drift layer is formed on an n+ cat... | 12/30/2003 |
| 6509578 | Method and structure for limiting emission current in field emission devices A field emission display has electron emitters that are current-limited by implanting in a silicon layer only enough ions to produce a desired current, and then forming emitters from the silicon layer by isotropic etching.... | 01/21/2003 |
| 6495864 | High-voltage semiconductor component, method for the production and use thereof The invention concerns a semiconductor component with at east one lateral region which is provided to accommodate a lateral electric field strength, whereby the semiconductor body within the body and/or in regions proximal to the surface of the semiconduc... | 12/17/2002 |
| 6437419 | Emitter ballast resistor with enhanced body effect to improve the short circuit withstand capability of power devices A power semiconductor device has an integral source/emitter ballast resistor. The gate has partial gate structures spaced apart from each other. Emitter resistors are provided beneath sidewall spacers on the ends of the gate structures. The emitter resist... | 08/20/2002 |
| 6429501 | Semiconductor device having high breakdown voltage and method for manufacturing the device A power device has its main junction formed in a central portion of an N-type substrate. A P-type layer is formed in a peripheral surface portion of the substrate. A P- -type RESURF layer of a lower impurity concentration than the P-type layer ... | 08/06/2002 |
| 6403988 | Semiconductor device with reverse conducting faculty A semiconductor device constructed as a reverse conducting static induction thyristor including a thyristor section 114 formed by an n- silicon substrate 101, p+ gate regions 102, 104 formed in one surface of the substrate, a p+... | 06/11/2002 |
| 6392250 | Organic light emitting devices having improved performance An organic light emitting device includes a mixed region composed of a mixture of a hole transport material, an electron transport material and at least one dopant material. The hole transport material and/or the electron transport material can optionally... | 05/21/2002 |
| 6281546 | Insulated gate field effect transistor and manufacturing method of the same A wide high concentration P+ type region is formed on the surface of an N- type epitaxial layer formed on a P type substrate in the vicinity of the edge portion of a cell region in which a transistor device is formed. As a result, ho... | 08/28/2001 |
| 6271545 | Asymmetrical thyristor with blocking/sweep voltage independent of temperature behavior Both the blocking voltage as well as the sweep voltage of conventional thyristors exhibit a pronounced temperature behavior, whereby the corresponding voltage values can change by up to 15% within the relevant temperature range (5° C.-120° C.). In the p... | 08/07/2001 |
| 6218217 | Semiconductor device having high breakdown voltage and method of manufacturing the same In a semiconductor device with a high breakdown voltage, insulating layers are buried at regions in n- silicon substrate located between gate trenches which are arranged with a predetermined pitch. This structure increases a carrier density at ... | 04/17/2001 |
| 6198115 | IGBT with reduced forward voltage drop and reduced switching loss The boundary between the P type silicon base and N+ buffer layer of an IGBT is intentionally damaged, as by a germanium implant, to create well defined and located damage sites for reducing lifetime in the silicon.... | 03/06/2001 |
| 6180965 | Semiconductor device having a static induction in a recessed portion In a static induction semiconductor device, particular a high power static induction semiconductor device, recessed portions 12 are formed in one surface of a silicon substrate 11 of one conductivity type, gate regions 13 of the other conductivity type ar... | 01/30/2001 |
| 6169299 | Semiconductor device The MOS gate thyristor of the present invention has a p+ type anode layer (first semiconductor layer), an n- type base region (second semiconductor layer) with the function of acting as a drift layer, a p- type base region... | 01/02/2001 |
| 6147369 | SCR and current divider structure of electrostatic discharge protective circuit An electrostatic discharge protective circuit of the invention includes a silicon controller rectifier (SCR) and a current diverter. The current diverter is used to bypass an initial low current thereby to prevent the SCR from being triggered by the low c... | 11/14/2000 |
| 6111278 | Power semiconductor devices having discontinuous emitter regions therein for inhibiting parasitic thyristor latch-up Power semiconductor devices having discontinuous emitter regions therein include a semiconductor substrate containing therein a collector region of second conductivity type, a buffer region of first conductivity type which forms a first P-N junction with ... | 08/29/2000 |
| 6078065 | Bilaterally controllable thyristor A specification is given of a bidirectionally controllable thyristor which is distinguished by improved decoupling between the two thyristor structures. In particular, the intention is that the switched-off structure cannot be triggered in an uncontrolled... | 06/20/2000 |
| 5909039 | Insulated gate bipolar transistor having a trench An IGBT comprises a drain, a highly doped p-type substrate layer, a highly doped n-type buffer layer, a drift layer, a p-type base layer, a highly doped n-type source region layer and a source electrode. A trench is etched in the base layer and an insulat... | 06/01/1999 |
| 5894149 | Semiconductor device having high breakdown voltage and method of manufacturing the same In a semiconductor device with a high breakdown voltage, insulating layers are buried at regions in n31 silicon substrate located between gate trenches which are arranged with a predetermined pitch. This structure increases a carrier density a... | 04/13/1999 |
| 5856683 | MOS-controlled thyristor using a source cathode elecrode as the gate electrode of a MOSFET element A MOS-gate switched power semiconductor component with a semiconductor body that has a number of unit cells arranged side-by-side and switched in parallel and consisting of a p-emitter zone adjacent to the anode, an adjoining, weakly doped n-base zone, th... | 01/05/1999 |
| 5780877 | Break-over photodiode A break-over photodiode, designed as a light-sensitive thyristor, can be stacked using a series connection with a plurality of break-over photodiodes, such stacking representing a high-voltage break-over diode. The break-over photodiode can be triggered b... | 07/14/1998 |
| 5763902 | Insulated gate bipolar transistor having a trench and a method for production thereof An insulated gate bipolar transistor comprises a drain which supports a highly doped p-type substrate layer; a low doped n-type drift layer supported over the substrate layer; a base layer supported over the drift layer including a trench extending into t... | 06/09/1998 |
