Class 257/14 - Quantum well

Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: Subject matter wherein at least two heterojunctions are
No. of patents: 990
Last issue date: 05/29/2012

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Number	Title	Issue Date
8188458	Non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices A method for forming non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices. Non-polar (11 20) a-plane GaN layers are grown on an r-plane (1 102) sapphire substrate using MOCVD. These non-polar (11 20) a-plane GaN layers ...	05/29/2012
8154010	Memory device and method of fabricating the same A memory device includes a first electrode, a second electrode spaced apart from the first electrode and a nanotube or nanowire network disposed between the first electrode and the second electrode, having a stacked structure of a P-type network and an N-type networ...	04/10/2012
8148715	Solid state charge qubit device This invention concerns a quantum device, suitable for quantum computing, based on dopant atoms located in a solid semiconductor or insulator substrate. In further aspects the device is scaled up. The invention also concerns methods of reading out from the devices, ...	04/03/2012
8148716	Group III nitride semiconductor optical device, epitaxial substrate, and method of making group III nitride semiconductor light-emitting device A group III nitride semiconductor optical device includes: a substrate comprising a group III nitride semiconductor; a first group-III nitride semiconductor region on a primary surface of the substrate; a second group-III nitride semiconductor region on the primary ...	04/03/2012
8138494	GaN series light-emitting diode structure The present invention relates to a GaN series light-emitting diode structure, which includes a substrate; at least one GaN series layer formed over the substrate; subsequently an interface blocking structure composed of an n-type GaN series superlattice structure an...	03/20/2012
8124959	High hole mobility semiconductor device One embodiment of the invention includes a high hole mobility p-channel GaAsySb1-y quantum well with a silicon substrate and an InxAl1-xAs barrier layer. ...	02/28/2012
8124960	Nitride semiconductor light emitting diode A nitride semiconductor light emitting diode (LED) is disclosed. The nitride semiconductor LED can include an active layer formed between an n-type nitride layer and a p-type nitride layer, where the active layer includes two or more quantum well layers and quantum ...	02/28/2012
8120012	Group III nitride white light emitting diode A white-light emitting diode comprises an n-type semiconductor layer, one or more quantum well structures formed over the n-type semiconductor layer, a p-type semiconductor layer formed on the quantum well structure, a first electrode formed on the p-type semiconduc...	02/21/2012
8120013	Nitride semi-conductor light emitting device and a process of producing a nitride semi-conductor light emitting device A nitride semi-conductor light emitting device has a p-type nitride semi-conductor layer 7, an n-type nitride semi-conductor layer 3, and a light emission layer 6 which is interposed between the p-type nitride semi-conductor layer 7 and t...	02/21/2012
8115193	Vertical resonator type light emitting diode A novel vertical resonator type light emitting diode of which has a simplified structure of the reflector layer of its light emitting side an which is resistant to declination of its emission output power towards a high temperature range, has an active layer 5	02/14/2012
8110823	III-V photonic integration on silicon Photonic integrated circuits on silicon are disclosed. By bonding a wafer of III-V material as an active region to silicon and removing the substrate, the lasers, amplifiers, modulators, and other devices can be processed using standard photolithographic techniques ...	02/07/2012
8106378	Semiconductor quantum dot device A p-type semiconductor barrier layer is provided in the vicinity of undoped quantum dots, and holes in the p-type semiconductor barrier layer are injected in advance in the ground level of the valence band of the quantum dots. Lowering the threshold electron density...	01/31/2012
8106379	Hybrid silicon evanescent photodetectors Photodetectors and integrated circuits including photodetectors are disclosed. A photodetector in accordance with the present invention comprises a silicon-on-insulator (SOI) structure resident on a first substrate, the SOI structure comprising a passive waveguide, ...	01/31/2012
8093581	Optical semiconductor device and method for manufacturing the same There is provided an optical semiconductor device having a first optical semiconductor element including an InP substrate, a lower cladding layer formed on the InP substrate, a lower optical guide layer which is formed on the lower cladding layer and is composed of ...	01/10/2012
8084764	Semiconductor light emitting device and nitride semiconductor light emitting device The present invention is a semiconductor light emitting device including an n-type semiconductor layer, an active layer, a first p-type semiconductor layer between the n-type semiconductor layer and the active layer, and a second p-type semiconductor layer on the op...	12/27/2011
8080820	Apparatus and methods for improving parallel conduction in a quantum well device Embodiments of an apparatus and methods of providing a quantum well device for improved parallel conduction are generally described herein. Other embodiments may be described and claimed. ...	12/20/2011
8058641	Copper blend I-VII compound semiconductor light-emitting devices Implementations and techniques for semiconductor light-emitting devices including one or more copper blend I-VII compound semiconductor material barrier layers are generally disclosed. ...	11/15/2011
8058640	Branched nanoscale wires The present invention generally relates to nanotechnology and, in particular, to branched nanoscale wires. In some cases, the branched nanoscale wires may be produced using vapor-phase and/or solution-phase synthesis. Branched nanoscale wires may be grown by deposit...	11/15/2011
8053757	Gallium nitride light-emitting device with ultra-high reverse breakdown voltage One embodiment of the present invention provides a gallium nitride (GaN)-based semiconductor light-emitting device (LED) which includes an n-type GaN-based semiconductor layer (n-type layer); an active layer; and a p-type GaN-based semiconductor layer (p-type layer)...	11/08/2011
8053758	Semiconductor device A semiconductor device for correcting an input signal and outputting a corrected signal are provided. The semiconductor device includes a semiconductor layer, a plurality of first conductors formed on one of faces of the semiconductor layer and serving as input term...	11/08/2011
8049204	Semiconductor memory device having variable resistance element and method for manufacturing the same A semiconductor memory device includes a variable resistance element including a first electrode, a current path forming region, and a second electrode. The current path forming region includes a first region made of a variable resistance material whose resistivity ...	11/01/2011
8030641	Graded in content gallium nitride-based device and method A gallium nitride-based device has Å first GaN layer and Å type II quantum well active region over the GaN layer. The type II quantum well active region comprises at least one InGaN layer and at least one GaNAs layer, wherein the InGaN comprises Å graded molar...	10/04/2011
8026507	Two terminal quantum device using MOS capacitor structure A gated quantum well device formed as an MOS capacitor is disclosed. The quantum well is an inversion region less than 20 nanometers wide under the MOS gate. The device may be fabricated in either polarity, and integrated into a CMOS IC, configured as a quantum dot ...	09/27/2011
8008648	Memristors with insulation elements and methods for fabricating the same Embodiments of the present invention are directed to nanoscale memristor devices that provide nonvolatile memristive switching. In one embodiment, a memristor device comprises an active region disposed between a first electrode and a second electrode. The device inc...	08/30/2011
7989799	Surface light emitting element Provided is a surface light emitting element having a high productivity, a high light emission output and good response characteristics, as well as capable of suppressing an increase of a forward voltage necessary for light emission. A surface light emitting element...	08/02/2011
7982208	Non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices A method for forming non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices. Non-polar (11 20) a-plane GaN layers are grown on an r-plane (1 102) sapphire substrate using MOCVD. These non-polar (11 20) a-plane GaN layers ...	07/19/2011
7982209	Memory cell comprising a carbon nanotube fabric element and a steering element A rewritable nonvolatile memory cell is disclosed comprising a steering element in series with a carbon nanotube fabric. The steering element is preferably a diode, but may also be a transistor. The carbon nanotube fabric reversibly changes resistivity when subjecte...	07/19/2011
7982210	Light emitting diode having modulation doped layer A light emitting diode (LED) having a modulation doped layer. The LED comprises an n-type contact layer, a p-type contact layer and an active region of a multiple quantum well structure having an InGaN well layer. The n-type contact layer comprises a first modulatio...	07/19/2011
7977665	Nitride-based light emitting device A nitride-based light emitting device capable of achieving an enhancement in light emission efficiency and an enhancement in reliability is disclosed. The nitride-based light emitting device includes a light emitting layer including a quantum well layer and a quantu...	07/12/2011
7977664	Growth method of nitride semiconductor layer and light emitting device using the growth method Growing a first nitride semiconductor layer on an AlxGayIn1-x-yN(0≦x≦1, 0	07/12/2011
7973303	Nitride semiconductor device A nitride semiconductor device includes n-type and p-type nitride semiconductor layers, an active layer, the active layer having a lamination of quantum barrier layers and quantum well layers, a thermal stress control layer disposed between the n-type nitride semico...	07/05/2011
7968867	Light-emitting device and method for manufacturing the same A light-emitting device and the method for making the same is disclosed. The light-emitting device is a semiconductor device, comprising a growth substrate, an n-type semiconductor layer, a quantum well active layer and a p-type semiconductor layer. It combines the ...	06/28/2011
7960714	Interfering excitations in FQHE fluids An apparatus includes a substrate with a planar surface, a multilayer of semiconductor layers located on the planar surface, a plurality of electrodes located over the multilayer, and a dielectric layer located between the electrodes and the multilayer. The multilay...	06/14/2011
7956347	Integrated modulating retro-reflector A novel package that integrates components for a modulating retro reflector into a single package is disclosed according to various embodiments. According to some embodiments the package is configured to secure a retro reflector, a quantum well modulator and photodi...	06/07/2011
7932512	Implantation before epitaxial growth for photonic integrated circuits Fabrication of a photonic integrated circuit (PIC) including active elements such as a semiconductor optical amplifier (SOA) and passive elements such as a floating rib waveguide. Selective area doping through ion implantation or thermal diffusion before semiconduct...	04/26/2011
7923716	Nitride semiconductor device There is provided a nitride semiconductor device including: an n-type nitride semiconductor layer; a p-type nitride semiconductor layer; and an active layer formed between the n-type and p-type nitride semiconductor layers, the active layer including a plurality of ...	04/12/2011
7915607	Nitride semiconductor device A nitride semiconductor device include an n-type nitride semiconductor layer; a p-type nitride semiconductor layer; and an active layer formed between the n-type and p-type nitride semiconductor layers. The active layer has an alternately-layered structure of a plur...	03/29/2011
7902545	Semiconductor for use in harsh environments A gallium-nitride semiconductor apparatus may include an active region having one or more nitride-based barrier layers that are modulation-doped using a nitride-based doped layer. An active region may have at least two nitride-based barrier layers, and a nitride-bas...	03/08/2011
7875875	Semiconductor device and manufacturing method thereof A quantum dot semiconductor device securing sufficient gains without depending on polarization and a manufacturing method thereof. On a first barrier layer, a multilayer quantum dot is formed by repeatedly stacking alternately a quantum dot layer and a second barrie...	01/25/2011
7858963	Nitride based semiconductor optical device, epitaxial wafer for nitride based semiconductor optical device, and method of fabricating semiconductor light-emitting device In the nitride based semiconductor optical device LE1, the strained well layers 21 extend along a reference plane SR1 tilting at a tilt angle α from the plane that is orthogonal to a reference axis extending in the direction of the c-axis. The ...	12/28/2010

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Class 257/14 - Quantum well