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| Number | Title | Issue Date |
| 8164111 | High voltage semiconductor device including a free wheel diode A high voltage semiconductor device includes a semiconductor substrate, a p type base region in a first main surface, an n+ type emitter region in the p type base region, an n+ type cathode region adjacent to an end surface of the semiconductor... | 04/24/2012 |
| 8120058 | High-drive current MOSFET A method of forming a semiconductor device having an asymmetrical source and drain. In one embodiment, the method includes forming a gate structure on a first portion of the substrate having a well of a first conductivity. A source region of a second conductivity an... | 02/21/2012 |
| 8097901 | Semiconductor device having insulated gate semiconductor element, and insulated gate bipolar transistor A semiconductor device having an IGBT includes: a substrate; a drift layer and a base layer on the substrate; trenches penetrating the base layer to divide the base layer into base parts; an emitter region in one base part; a gate element in the trenches; an emitter... | 01/17/2012 |
| 8093621 | VTS insulated gate bipolar transistor In one embodiment, a power transistor device comprises a substrate that forms a PN junction with an overlying buffer layer. The power transistor device further includes a first region, a drift region that adjoins a top surface of the buffer layer, and a body region.... | 01/10/2012 |
| 8089094 | Semiconductor device A power semiconductor device is provided, that realizes high-speed turnoff and soft switching at the same time, includes n-type main semiconductor layer including lightly doped n-type semiconductor layer and extremely lightly doped n-type semiconductor layer arrange... | 01/03/2012 |
| 8072000 | Avalanche capability improvement in power semiconductor devices having dummy cells around edge of active area A structure of power semiconductor device having dummy cells around edge of active area is disclosed. The UIS test result of said improved structure shows that failed site after UIS test randomly located in active area which means avalanche capability of the semicon... | 12/06/2011 |
| 8017974 | Semiconductor device with increased withstand voltage A semiconductor device having the present high withstand voltage power device IGBT has at a back surface a p collector layer with boron injected in an amount of approximately 3×1013/cm2 with an energy of approximately 50 KeV to a depth of appr... | 09/13/2011 |
| 7999285 | Insulated gate bipolar transistor and method for manufacturing the same An insulated gate bipolar transistor according to an embodiment includes a first conductive type collector ion implantation area in a substrate; a second conductive type buffer layer, including a first segment buffer layer and a second segment buffer layer, on the f... | 08/16/2011 |
| 7977704 | Semiconductor device having insulated gate semiconductor element, and insulated gate bipolar transistor A semiconductor device having an IGBT includes: a substrate; a drift layer and a base layer on the substrate; trenches penetrating the base layer to divide the base layer into base parts; an emitter region in one base part; a gate element in the trenches; an emitter... | 07/12/2011 |
| 7939850 | Semiconductor device and method for producing a semiconductor device A semiconductor device has a semiconductor body with a semiconductor device structure including at least a first electrode and a second electrode. Between the two electrodes, a drift region is arranged, the drift region including charge compensation zones and drift ... | 05/10/2011 |
| 7932538 | Insulated gate bipolar transistor and method of fabricating the same According to embodiments, an insulated gate bipolar transistor (IGBT) may include a first conductive type collector ion implantation area, formed within a substrate, second conductive type first buffer layers, formed over the collector ion implantation area and each... | 04/26/2011 |
| 7897997 | Trench IGBT with trench gates underneath contact areas of protection diodes A trench PT IGBT (or NPT IGBT) having clamp diodes for ESD protection and prevention of shortage among gate, emitter and collector. The clamp diodes comprise multiple back-to-back Zener Diode composed of doped regions in a polysilicon layer doped with dopant ions of... | 03/01/2011 |
| 7897996 | Semiconductor device and method for manufacturing the same A semiconductor device includes: an insulating film provided on a back surface of a semiconductor substrate; a plurality of isolation regions provided to reach the insulating film from a main surface of the semiconductor substrate; at least a first semiconductor lay... | 03/01/2011 |
| 7872282 | Semiconductor device and method of manufacturing same A semiconductor device includes deep first field limiting rings, shallow second field limiting rings, insulation films covering each surface portion of each of the first and the second field limiting rings, and conductive field plates each in contact with a surface ... | 01/18/2011 |
| 7842968 | Integrated low leakage diode An integrated low leakage diode suitable for operation in a power integrated circuit has a structure similar to a lateral power MOSFET, but with the current flowing through the diode in the opposite direction to a conventional power MOSFET. The anode is connected to... | 11/30/2010 |
| RE41866 | Semiconductor device and method of fabricating same There is disclosed a semiconductor device having an MOS gate for reducing variations in threshold voltage (Vth) with time wherein a surface protective film is not formed in a device area including channels but only in a device peripheral area, thereby red... | 10/26/2010 |
| 7804108 | Semiconductor devices The semiconductor device has a collector electrode, a p+ collector region formed on the collector electrode, an n− drift region formed on the collector region, a p− body region formed on the drift region, and a plurality of n | 09/28/2010 |
| 7750365 | Insulated gate bipolar transistor with built-in freewheeling diode An insulated gate bipolar transistor includes a first main electrode on a first main surface and in contact with a base region of an insulated gate transistor at the first main surface, a first semiconductor layer of a first conductivity type on a second main surfac... | 07/06/2010 |
| 7732833 | High-voltage semiconductor switching element In a base region of a first conductivity type, at least one emitter region of a second conductivity type and at least one sense region of the second conductivity type, spaced away from the emitter region, are selectively formed. The emitter region and the sense regi... | 06/08/2010 |
| 7622754 | Semiconductor device and fabrication method thereof A p-type collector layer is formed on a reverse side of an n-type high-resistivity first base layer, a p-type second base layer is formed on an obverse side of the first base layer, an emitter layer is formed on the second base layer, gate electrodes are formed insi... | 11/24/2009 |
| 7432135 | Semiconductor device and method of manufacturing the same A semiconductor device, including: a semiconductor substrate of a first conductivity type having a first and second major surfaces; a first conductivity type semiconductor layer formed on the first major surface of the semiconductor substrate; a base layer of a seco... | 10/07/2008 |
| 7417282 | Vertical double-diffused metal oxide semiconductor (VDMOS) device incorporating reverse diode The present invention disclosed herein is a Vertical Double-Diffused Metal Oxide Semiconductor (VDMOS) device incorporating a reverse diode. This device includes a plurality of source regions isolated from a drain region. A source region in close proximity to the dr... | 08/26/2008 |
| 7348628 | Vertical channel semiconductor devices and methods of manufacturing the same Vertical channel semiconductor devices include a semiconductor substrate with a pillar having an upper surface. An insulated gate electrode is around a periphery of the pillar. The insulated gate electrode has an upper surface at a vertical level lower than the uppe... | 03/25/2008 |
| 7335947 | Angled implant for shorter trench emitter An insulated gate trench type semiconductor device having L-shaped diffused regions, each diffused region having a vertically oriented portion and a horizontally oriented portion extending laterally from the vertically oriented portion, and a method for manufacturin... | 02/26/2008 |
| 7323386 | Method of fabricating semiconductor device containing dielectrically isolated PN junction for enhanced breakdown characteristics A semiconductor device includes a field shield region that is doped opposite to the conductivity of the substrate and is bounded laterally by dielectric sidewall spacers and from below by a PN junction. For example, in a trench-gated MOSFET the field shield region m... | 01/29/2008 |
| 7317324 | Semiconductor integrated circuit testing device and method A plurality of resistors is connected to a plurality of output terminals of a semiconductor integrated circuit, respectively, and a predetermined voltage is applied to the plurality of resistors. Also, a predetermined operation pattern signal used to test functions ... | 01/08/2008 |
| 7312125 | Fully depleted strained semiconductor on insulator transistor and method of making the same An integrated circuit includes multiple layers. A semiconductor-on-insulator (SOI) wafer can be used to house transistors. Two substrates or wafers can be bonded to form the multiple layers. A strained semiconductor layer can be between a silicon germanium layer and... | 12/25/2007 |
| 7312501 | Semiconductor device ON resistance and leakage current of a vertical power MOSFET are to be diminished. In a vertical high breakdown voltage MOSFET with unit MOSFETs (cells) arranged longitudinally and transversely over a main surface of a semiconductor substrate, the cells are made qua... | 12/25/2007 |
| 7309898 | Method and apparatus for providing noise suppression in an integrated circuit A method and apparatus for improving the latchup tolerance of circuits embedded in an integrated circuit while avoiding the introduction of noise from such tolerance into the power rails. ... | 12/18/2007 |
| 7288881 | Electron emitter and light emission element Primary electrons impinge upon an emitter section of an electron emitter for causing emission of the secondary electrons. The secondary electrons are outputted from the electron emitter. The secondary electrons emitted from the emitter section are accelerated in an ... | 10/30/2007 |
| 7279757 | Double-sided extended drain field effect transistor A double-sided extended drain field effect transistor that includes a gate terminal overlying a channel region in a substrate. The substrate includes a drain region of a first carrier type that is laterally separated from the channel region by a first RESURF region ... | 10/09/2007 |
| 7268046 | Dual gate oxide high-voltage semiconductor device and method for forming the same A dual gate oxide high-voltage semiconductor device and method for forming the same are provided. Specifically, a device formed according to the present invention includes a semiconductor substrate, a buried oxide layer formed over the substrate, a silicon layer for... | 09/11/2007 |
| 7253059 | Method of forming an integrated circuit with multi-length power transistor segments A monolithic power integrated circuit fabricated on a semiconductor die includes a control circuit and a first output high voltage field-effect transistor (HVFET) having source and drain segments substantially equal to a first length. A second output HVFET has sourc... | 08/07/2007 |
| 7247887 | Segmented channel MOS transistor By forming MOSFETs on a substrate having pre-existing ridges of semiconductor material (i.e., a “corrugated substrate”), the resolution limitations associated with conventional semiconductor manufacturing processes can be overcome, and high-performance, low-powe... | 07/24/2007 |
| 7247550 | Silicon carbide-based device contact and contact fabrication method A silicon carbide-based device contact and contact fabrication method employ a layer of poly-silicon on a SiC substrate, with the contact's metal layer deposited on top of the poly-silicon. Both Schottky and ohmic contacts can be formed. The poly-silicon layer can b... | 07/24/2007 |
| 7233031 | Vertical power semiconductor component A vertical power semiconductor component, e.g. a diode or an IGBT, in which there are formed, on the rear side of a substrate, a rear side emitter or a cathode emitter and, over that, a rear side metal layer that at least partly covers the latter, is defined by the ... | 06/19/2007 |
| 7230310 | Super-junction voltage sustaining layer with alternating semiconductor and High-K dielectric regions A semiconductor power device includes a device feature layer, a substrate contact layer and a voltage-sustaining layer between them. The voltage-sustaining layer includes alternating semiconductor and high permittivity dielectric regions, where each region extends f... | 06/12/2007 |
| 7230298 | Transistor having narrow trench filled with epitaxially-grown filling material free of voids A transistor and diode having a low resistance and a high breakdown voltage are provided. When the bottom portion of a narrow trench having the shape of a rectangular parallelepiped is filled with a semiconductor grown by epitaxial method, a {1 0 0} plane is exposed... | 06/12/2007 |
| 7227223 | Power MOS transistor having trench gate A semiconductor device, and particularly an MOS transistor device, wherein in order to increase a channel region density and to achieve a low resistance of a transistor device there is provided a first gate electrode group having a plurality of gate electrodes forme... | 06/05/2007 |
| 7224002 | Silicon on insulator read-write non-volatile memory comprising lateral thyristor and trapping layer Disclosed herein is an improved thyristor-based memory cell. In one embodiment, the cell is formed in a floating substrate using Silicon-On-Insulator (SOI) technology. The cell preferably incorporates a lateral thyristor formed entirely in the floating substrate, an... | 05/29/2007 |
