Did You Know...
...that several people are credited with the invention of the flush toilet? Most people have heard of Thomas Crapper (1837-1910), the sanitary engineer who invented the valve-and-siphon arrangement that made the modern toilet possible. Another claimant to "the throne" was British inventor Alexander Cumming who patented a toilet in 1775. Then there's a nameless Minoan (a native of ancient Crete) who lived 4,000 years ago who supposedly was ahead of his time and created the first flush toilet!
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| Number | Title | Issue Date |
| 7863644 | Bipolar transistor and method of forming the bipolar transistor with a backside contact NPN and PNP bipolar junction transistors are formed on a wafer in a fabrication process that eliminates the heavily-doped buried layers and the lightly-doped epitaxial layer by forming back side collector contacts that are electrically connected to an interconnect s... | 01/04/2011 |
| 7795637 | ESD protection circuit The present invention relates a technique using a silicon controlled rectifier (SCR) in a rail based non-breakdown (RBNB) ESD protection device that protects a micro chip from ESD stress. To this end, an ESD protection circuit of the present invention compris... | 09/14/2010 |
| 7714353 | Insulated gate semiconductor device and the method of manufacturing the same A trench-type insulated-gate semiconductor device is disclosed that includes unit cells having a trench gate structure that are scattered uniformly throughout the active region of the device. The impurity concentration in the portion of a p-type base region, sandwic... | 05/11/2010 |
| 7433229 | Flash memory device with shunt A shunt activation signal is transmitted by an external control terminal through an external transmission interface to switch a flash memory controller in a shunt mode. The shunt activation signal of the external transmission interface can set up a switch as shunt. ... | 10/07/2008 |
| 7405963 | Dynamic data restore in thyristor-based memory device A dynamically-operating restoration circuit is used to apply a voltage or current restore pulse signal to thyristor-based memory cells and therein restore data in the cell using the internal positive feedback loop of the thyristor. In one example implementation, the... | 07/29/2008 |
| 7368380 | Method of manufacturing semiconductor device A method of manufacturing a semiconductor device is disclosed in which a metallic deposit is stably formed on the anode side with small variation in film thickness, and plating is prevented on the cathode side without carrying out any additional processing on the ca... | 05/06/2008 |
| 7259407 | Isolated HF-control SCR switch A vertical SCR switch to be controlled by a high-frequency signal having at least four main alternated layers. The switch includes a gate terminal and a gate reference terminal connected via integrated capacitors to corresponding areas. In the case of a thyristor, h... | 08/21/2007 |
| 7259511 | Flat panel display device with surfaces of cathodes and control electrodes lying in the same flat plane A structure is provided which facilitates manufacturing of a flat type image display element which includes electrodes capable of enhancing the display efficiency with an extremely small control electrode current using a cathode material which can obtain a sufficien... | 08/21/2007 |
| 7247921 | Semiconductor apparatus and method of manufacturing same, and method of detecting defects in semiconductor apparatus A semiconductor apparatus includes a semiconductor substrate having a device region and a periphery region surrounding the device region; a semiconductor device provided in the device region of the semiconductor substrate; a first electrode pad provided on the semic... | 07/24/2007 |
| 7183591 | Trench isolation for thyristor-based device A semiconductor device includes a thyristor body having at least one region in a substrate. According to an example embodiment of the present invention, a trench is in a substrate and adjacent to a thyristor body region in the substrate. The trench is lined with an ... | 02/27/2007 |
| 7170106 | Power semiconductor device A power semiconductor device includes trenches disposed in a first base layer of a first conductivity type at intervals to partition main and dummy cells, at a position remote from a collector layer of a second conductivity type. In the main cell, a second base laye... | 01/30/2007 |
| 7147050 | Recuperator construction for a gas turbine engine A counter-flow recuperator formed from annular arrays of recuperator core segments. The recuperator core segments are formed from two opposing sheets of fin fold material coined to form a primary surface zone disposed between two flattened manifold zones. Each prima... | 12/12/2006 |
| 7138836 | Hot carrier injection suppression circuit A method of preventing Hot Carrier Injection in input/output connections on low voltage integrated circuits. As integrated circuit voltages drop generally so does the external voltages that those circuits can tolerate. By placing input/output devices, in series, ext... | 11/21/2006 |
| 7109097 | Process sequence for doped silicon fill of deep trenches A method for void free filling with in-situ doped amorphous silicon of a deep trench structure is provided in which a first fill is carried out in at a temperature, pressure and dopant to silane ratio such that film deposition occurs from the bottom of the trench up... | 09/19/2006 |
| 7078296 | Self-aligned trench MOSFETs and methods for making the same Self-aligned trench MOSFETs and methods for manufacturing the same are disclosed. By having a self-aligned structure, the number of MOSFETS per unit area—the cell density—is increased, making the MOSFETs cheaper to produce. The self-aligned structure for the MOS... | 07/18/2006 |
| 7078740 | Power semiconductor device A power semiconductor device includes trenches disposed in a first base layer of a first conductivity type at intervals to partition main and dummy cells, at a position remote from a collector layer of a second conductivity type. In the main cell, a second base laye... | 07/18/2006 |
| 7065873 | Recuperator assembly and procedures A construction of recuperator core segments is provided which insures proper assembly of the components of the recuperator core segment, and of a plurality of recuperator core segments. Each recuperator core segment must be constructed so as to prevent nesting of fi... | 06/27/2006 |
| 7052963 | Method of forming trench transistor with chained implanted body including a plurality of implantation with different energies A “chained implant” technique forms a body region in a trench gated transistor. In one embodiment, a succession of “chained” implants can be performed at the same dose but different energies. In other embodiments different doses and energies can be used, and... | 05/30/2006 |
| 7042759 | Dynamic data restore in thyristor-based memory device A dynamically-operating restoration circuit is used to apply a voltage or current restore pulse signal to thyristor-based memory cells and therein restore data in the cell using the internal positive feedback loop of the thyristor. In one example implementation, the... | 05/09/2006 |
| 7027277 | High voltage tolerant electrostatic discharge (ESD) protection clamp circuitry High voltage tolerant electrostatic discharge (ESD) protection clamp circuitry including a self-triggering device having a blocking junction with a two-dimensional geometrical lateral profile. ... | 04/11/2006 |
| 7009292 | Package type semiconductor device A package type semiconductor device comprising: a semiconductor chip having a semiconductor part; a main electrode for connecting to a first region of the semiconductor part; a control wiring layer for connecting to a second region of the semiconductor part; a block... | 03/07/2006 |
| 7002379 | I/O circuit using low voltage transistors which can tolerate high voltages even when power supplies are powered off An apparatus for providing bias voltages for input/output (I/O) connections on low voltage integrated circuits. In one embodiment, the invention comprises an I/O pad, a pull-down transistor device that has a protective transistor coupled to said I/O pad, and a pull-... | 02/21/2006 |
| 6998652 | Trench isolation for thyristor-based device A semiconductor device includes a thyristor body having at least one region in a substrate. According to an example embodiment of the present invention, a trench is in a substrate and adjacent to a thyristor body region in the substrate. The trench is lined with an ... | 02/14/2006 |
| 6980457 | Thyristor-based device having a reduced-resistance contact to a buried emitter region A thyristor-based semiconductor device is formed having a thyristor, a pass device and an emitter region buried in a substrate and below at least one other vertically-arranged contiguous region of the thyristor that is at least partially below an upper surface of th... | 12/27/2005 |
| 6965131 | Thyristor switch with turn-off current shunt, and operating method A semiconductor switch includes a thyristor and a current shunt, preferably a transistor in parallel with and controlled by the thyristor, which shunts thyristor current at turn-off. The thyristor includes a portion of a drift layer, with a p-n junction formed below... | 11/15/2005 |
| 6956266 | Structure and method for latchup suppression utilizing trench and masked sub-collector implantation A method and structure for an integrated circuit comprising a substrate of a first polarity; a trench structure in the substrate; a well region of a second polarity abutting the trench structure; and a heavily doped region of the second polarity abutting the trench ... | 10/18/2005 |
| 6911679 | LVTSCR with compact design In an ESD protection device making use of a LVTSCR, at least one contacted drain and at least one emitter are formed, and are arranged laterally next to each other to be substantially equidistant from the gate of the LVTSCR, to improve holding voltage and decrease s... | 06/28/2005 |
| 6906356 | High voltage switch A high power switch includes diode and BJT structures interdigitated in a drift layer and separated by insulated trench gates; electrodes contacting the diode and BJT structures provide anode and cathode connections. Shallow N+ regions extend below and around the co... | 06/14/2005 |
| 6891205 | Stability in thyristor-based memory device A semiconductor device having a thyristor-based memory device exhibits improved stability under adverse operating conditions related to temperature, noise, electrical disturbances and light. In one particular example embodiment of the present invention, a semiconduc... | 05/10/2005 |
| 6885581 | Dynamic data restore in thyristor-based memory device A dynamically-operating restoration circuit (106) is used to apply a voltage or current restore pulse signal to thyristor-based memory cells (108) and therein restore data in the cell using the internal positive feedback loop of the thyristor (110 | 04/26/2005 |
| 6870200 | Insulated gate type semiconductor device having a diffusion region contacting bottom and side portions of trenches A surface region of a first base layer is formed with a second base layer. Trenches are formed over a range from the surface of the second base layer to the first base layer. The second base layer is divided into base layers. Each of first trenches is formed with a ... | 03/22/2005 |
| 6809349 | Power semiconductor device A power semiconductor device includes trenches disposed in a first base layer of a first conductivity type at intervals to partition main and dummy cells, at a position remote from a collector layer of a second conductivity type. In the main cell, a second base laye... | 10/26/2004 |
| 6686613 | Punch through type power device A negative buffer layer and a positive collector layer are formed on a side of one surface of a semiconductor substrate. The positive collector layer is set to have a low dose amount and set shallow so that a low injection efficiency emitter structure is ... | 02/03/2004 |
| 6666481 | Shunt connection to emitter A semiconductor device is formed having a thyristor, a pass device and a conductive shunt that electrically connects an emitter region of the thyristor with a node near an upper surface of the substrate. In one example embodiment of the present invention,... | 12/23/2003 |
| 6653175 | Stability in thyristor-based memory device A semiconductor device having a thyristor-based memory device exhibits improved stability under adverse operating conditions related to temperature, noise, electrical disturbances and light. In one particular example embodiment of the present invention, a... | 11/25/2003 |
| 6620653 | Semiconductor device and method of manufacturing the same A negative buffer layer and a positive collector layer are formed on a side of one surface of a semiconductor substrate. The positive collector layer is set to have a low dose amount and set shallow so that a low injection efficiency emitter structure is ... | 09/16/2003 |
| 6476429 | Semiconductor device with breakdown voltage improved by hetero region A power MOSFET includes an n- -drain layer, a drain contact layer disposed on a first side of the drain layer, a p-type base layer disposed on a second side of the drain layer, and an n-source layer disposed on the base layer. A gate electrode ... | 11/05/2002 |
| 6472692 | Semiconductor device To suppress spike voltage generated at turn-off operation, a semiconductor device according to the invention comprises a first region composed of a first conductor, a second region composed of a second conductor formed on top of the first region, a third ... | 10/29/2002 |
| 6472686 | Silicon carbide (SIC) gate turn-off (GTO) thyristor apparatus and method for high power control A Silicon Carbide (SiC) Gate Turn-Off (GTO) thyristor is formed of a substrate having at least three epi-layers provided thereon as first, second and third doped regions, respectively, and the substrate being a fourth doped region, wherein the at least fo... | 10/29/2002 |
| 6462359 | Stability in thyristor-based memory device A semiconductor device having a thyristor-based memory device exhibits improved stability under adverse operating conditions related to temperature, noise, electrical disturbances and light. In one particular example embodiment of the present invention, a... | 10/08/2002 |
