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An armor with rollers is provided that enables a user to move in all positions by rolling on a hard and smooth surface while constantly varying his bearing points on the ground.
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| Number | Title | Issue Date |
| 8143644 | Bipolar device compatible with CMOS process technology A bipolar device includes: an emitter of a first polarity type constructed on a semiconductor substrate; a collector of the first polarity type constructed on the semiconductor substrate; a gate pattern in a mesh configuration defining the emitter and the collector;... | 03/27/2012 |
| 8084783 | GaN-based device cascoded with an integrated FET/Schottky diode device A power semiconductor device is provided that includes a depletion mode (normally ON) main switching device cascoded with a higher speed switching device, resulting in an enhancement mode (normally OFF) FET device for switching power applications. The main switching... | 12/27/2011 |
| 8049248 | Semiconductor device including thyristor and method of manufacturing the same A semiconductor device includes a thyristor in which a first-conductivity-type first region, a second-conductivity-type second region having a conductivity type reverse to the first conductivity type, a first-conductivity-type third region, and a second-conductivity... | 11/01/2011 |
| 8035126 | One-transistor static random access memory with integrated vertical PNPN device A one-transistor static random access memory (1T SRAM) device and circuit implementations are disclosed. The 1T SRAM device includes a planar field effect transistor (FET) on the surface of the cell and a vertical PNPN device integrated to one side of the FET. A bas... | 10/11/2011 |
| 8015538 | Design structure with a deep sub-collector, a reach-through structure and trench isolation The invention relates to noise isolation in semiconductor devices, and a design structure on which a subject circuit resides. A design structure is embodied in a machine readable medium used in a design process. The design structure includes a deep sub-collector loc... | 09/06/2011 |
| 7982239 | Power switching transistors In an embodiment, a integrated semiconductor device includes a first Vertical Junction Field Effect Transistor (VJFET) having a source, and a gate disposed on each side of the first VJFET source, and a second VJFET transistor having a source, and a gate disposed on ... | 07/19/2011 |
| 7982240 | Bidirectional electronic switch A main semiconductor region grown on a substrate has formed on its surface a pair of main electrodes spaced from each other, a gate electrode between the main electrodes, and a pair of diode-forming electrodes spaced farther away from the gate electrode than are the... | 07/19/2011 |
| 7948005 | Insulated-gate bipolar transistor (IGBT) A fourth semiconductor region of a first conduction type is provided in a partial region of a third semiconductor region of a second conduction type. This configuration enhances the blocking voltage at the time when the sheet carrier concentration of a fifth semicon... | 05/24/2011 |
| 7915638 | Symmetric bidirectional silicon-controlled rectifier The present invention discloses a symmetric bidirectional silicon-controlled rectifier, which comprises: a substrate; a buried layer formed on the substrate; a first well, a middle region and a second well, which are sequentially formed on the buried layer side-by-s... | 03/29/2011 |
| 7897995 | Lateral bipolar junction transistor with reduced base resistance A lateral bipolar junction transistor formed in a semiconductor substrate includes an emitter region; a base region surrounding the emitter region; a gate disposed at least over a portion of the base region; a collector region having at least one open side and being... | 03/01/2011 |
| 7893457 | Bipolar mosfet devices and methods for their use A semiconductor device includes at least one cell including a base region of a first conductivity type having disposed therein at least one emitter region of a second conductivity type, a first well region of a second conductivity type, a second well region of a fir... | 02/22/2011 |
| 7868353 | Solid-state switch capable of bidirectional operation A monolithic switching device including a main semiconductor region configured to provide a current-carrying channel as in the form of two-dimensional electron gas. Disposed symmetrically on a surface of the main semiconductor region are two main electrodes to be co... | 01/11/2011 |
| 7859011 | High ion/Ioff SOI MOSFET using body voltage control A semiconductor device may comprise a partially-depleted SOI MOSFET having a floating body region disposed between a source and drain. The floating body region may be driven to receive injected carriers for adjusting its potential during operation of the MOSFET. In ... | 12/28/2010 |
| 7847316 | Semiconductor device and its manufacture A reliable semiconductor device is provided which comprises lower and upper IGBTs 1 and 2 preferably bonded to each other by solder, and a wire strongly connected to lower IGBT 1. The semiconductor device comprises a lower IGBT 1, a lower... | 12/07/2010 |
| 7786505 | Reduction of charge leakage from a thyristor-based memory cell Formation of a thyristor-based memory cell is described. A first gate dielectric of the storage element is formed over a base region thereof located in a silicon layer. A transistor is coupled to the storage element via a cathode region located in the silicon layer.... | 08/31/2010 |
| 7781797 | One-transistor static random access memory with integrated vertical PNPN device A one-transistor static random access memory (1T SRAM) device and circuit implementations are disclosed. The 1T SRAM device includes a planar field effect transistor (FET) on the surface of the cell and a vertical PNPN device integrated to one side of the FET. A bas... | 08/24/2010 |
| 7777249 | Semiconductor device with enhanced switching speed and method for manufacturing the same A method for manufacturing a semiconductor device according to the present invention has a step of forming a plurality of MOSFETs each having a channel of a first conductivity type in a stripe on the first major surface of a wafer; a step of implanting an impurity o... | 08/17/2010 |
| 7741655 | Semiconductor device A semiconductor device includes a semiconductor substrate having a main surface and a semiconductor element having an insulated gate field effect portion formed in the semiconductor substrate. The semiconductor element includes an n− region, an n-type s... | 06/22/2010 |
| 7723748 | Semiconductor device including electrostatic discharge protection circuit A SGPMOS transistor includes a base, a P-type diffusion layer, a gate electrode, and a LOCOS oxide film. The base includes at least one of a N-type semiconductor substrate, a P-type semiconductor substrate, and a N-type well. The P-type diffusion layer includes a P-... | 05/25/2010 |
| 7633095 | Integration of high-voltage devices and other devices Integrating high-voltage devices with other circuitry, which may be fabricated on a semiconductor wafer using low-voltage foundry technology, such as a low-voltage complementary metal oxide semiconductor (LV-CMOS) process. The other circuitry may include low-voltage... | 12/15/2009 |
| 7465965 | Transistor controlled thyristor memory device A semiconductor device including: a bulk semiconductor substrate; an access transistor; a thruster formed on the bulk semiconductor substrate connecting to the access transistor; an element separating region to separate the region for the access transistor and the r... | 12/16/2008 |
| 7456439 | Vertical thyristor-based memory with trench isolation and its method of fabrication A semiconductor device may comprise a plurality of memory cells. A memory cell may comprise a thyristor, at least a portion of which is formed in a pillar of semiconductor material. The pillar may comprise sidewalls defining a cylindrical circumference of a first di... | 11/25/2008 |
| 7432135 | Semiconductor device and method of manufacturing the same A semiconductor device, including: a semiconductor substrate of a first conductivity type having a first and second major surfaces; a first conductivity type semiconductor layer formed on the first major surface of the semiconductor substrate; a base layer of a seco... | 10/07/2008 |
| 7405963 | Dynamic data restore in thyristor-based memory device A dynamically-operating restoration circuit is used to apply a voltage or current restore pulse signal to thyristor-based memory cells and therein restore data in the cell using the internal positive feedback loop of the thyristor. In one example implementation, the... | 07/29/2008 |
| 7381999 | Workfunction-adjusted thyristor-based memory device A memory device having a thyristor-based storage element and an access device coupled to the thyristor-based storage element at a common storage node is described. The thyristor-based storage element has a first gate stack, where the first gate stack has a first wor... | 06/03/2008 |
| 7365373 | Thyristor-type memory device A thyristor device can be used to implement a variety of semiconductor memory circuits, including high-density memory-cell arrays and single cell circuits. In one example embodiment, the thyristor device includes doped regions of opposite polarity, and a first word ... | 04/29/2008 |
| 7361557 | Insulated gate type semiconductor device and method for fabricating the same In an insulated-gate type semiconductor device in which a gate-purpose conductive layer is embedded into a trench which is formed in a semiconductor substrate, and a source-purpose conductive layer is provided on a major surface of the semiconductor substrate, a por... | 04/22/2008 |
| 7361970 | Method for production of a buried stop zone in a semiconductor component and semiconductor component comprising a buried stop zone A method for the production of a stop zone in a doped zone of a semiconductor body having a first side and a second side, comprises the following method steps: applying a mask having cutouts to one of the sides of the semiconductor... | 04/22/2008 |
| 7358127 | Power semiconductor rectifier having broad buffer structure and method of manufacturing thereof Impurity concentration (Nd(X)) in an n-drift layer in a diode is at a maximum at a position at a distance Xp from an anode electrode in a direction from the anode electrode to a cathode electrode, and gradually decreases from the position toward each of t... | 04/15/2008 |
| 7351614 | Deep trench isolation for thyristor-based semiconductor device A thyristor-based semiconductor device includes a filled trench separating and electrically insulating adjacent thyristor control ports. According to an example embodiment of the present invention, the filled trench is formed in a substrate adjacent to at least one ... | 04/01/2008 |
| 7342281 | Electrostatic discharge protection circuit using triple welled silicon controlled rectifier Provided is an electrostatic discharge (ESD) protection circuit using a silicon controlled rectifier (SCR), which is applied to a semiconductor integrated circuit (IC). A semiconductor substrate has a triple well structure such that a bias is applied to a p-well cor... | 03/11/2008 |
| 7336523 | Memory device using nanotube cells A memory device using a nanotube cell comprises a plurality of nanotube sub-cell arrays each having a hierarchical bit line structure including a main bit line and a sub-bit line. In the memory device, a nanotube cell array comprising a capacitor and a PNPN nanotube... | 02/26/2008 |
| 7335928 | Semiconductor device having a metal conductor in ohmic contact with the gate region on the bottom of each the first groove A silicon carbide semiconductor device such as JFET, SIT and the like is provided for accomplishing a reduction in on-resistance and high-speed switching operations. In the JFET or SIT which turns on/off a current with a depletion layer extending in a channel betwee... | 02/26/2008 |
| 7329916 | DRAM cell arrangement with vertical MOS transistors The invention is related to a DRAM cell arrangement with vertical MOS transistors. Channel regions arranged along one of the columns of a memory cell matrix are parts of a rib which is surrounded by a gate dielectric layer. Gate electrodes of the MOS transistors bel... | 02/12/2008 |
| 7326969 | Semiconductor device incorporating thyristor-based memory and strained silicon A semiconductor memory device may comprise a thyristor-based memory having some portions formed in strained silicon, and other portions formed in relaxed silicon. In a further embodiment, a thyristor in the thyristor-based memory may be formed in a region of relaxed... | 02/05/2008 |
| 7285804 | Thyristor-based SRAM An integrated circuit structure includes a semiconductor substrate and a horizontal semiconductor fin on top of the semiconductor substrate. An access transistor gate and a thyristor gate are on top of the semiconductor substrate and in contact with the horizontal s... | 10/23/2007 |
| 7285805 | Low reference voltage ESD protection device In a low voltage ESD protection device, an extra control electrode is created by not connecting the n+ drain and p+ emitter regions of the LVTSCR, and controlling the control electrode by means of a diode connected NMOS. ... | 10/23/2007 |
| 7276778 | Semiconductor system functioning as thyristor in on-state, and as bipolar transistor in transient state or with overcurrent A semiconductor system includes a self arc-extinguishing device, and an IGBT that works as a thyristor when a current between a first terminal and a second terminal connected to a second well electrode is small, and as a bipolar transistor when that current is large... | 10/02/2007 |
| 7276764 | Semiconductor device with metal wire layer masking An object of the present invention is to provide a semiconductor device capable of radiating electron-beams only to a desired region without forming a layer for restricting the radiating rays. A source electrode 22 made of aluminum prevents the generation of ... | 10/02/2007 |
| 7274047 | Silicon controlled rectifier electrostatic discharge protection device for power supply lines with powerdown mode of operation An electrostatic discharge (ESD) protection circuit in a semiconductor integrated circuit (IC) having protected circuitry. The ESD protection circuit includes a silicon controlled rectifier (SCR) having at least one first type high dopant region coupled to a first r... | 09/25/2007 |
