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| Number | Title | Issue Date |
| 8188457 | Light emitting device and layered light emitting device A light emitting device includes a substrate, a first cladding layer, an active layer, and a second cladding layer formed in that order, and a reflective part formed above the substrate and separated from the active layer. At least a portion of the active layer cons... | 05/29/2012 |
| 8183555 | Semiconductor light emitting device and method for manufacturing the same A semiconductor light emitting device including a first semiconductor layer including a first type dopant; a second semiconductor layer including the first type dopant on the first semiconductor layer; an active layer on the second semiconductor layer, the active la... | 05/22/2012 |
| 8168966 | GaN-based semiconductor light-emitting device, light illuminator, image display planar light source device, and liquid crystal display assembly A GaN-based semiconductor light-emitting device includes (A) a first GaN-based compound semiconductor layer 13 having n-type conductivity, (B) an active layer 15 having a multi-quantum well structure including well layers and barrier layers for separat... | 05/01/2012 |
| 8164084 | Light-emitting device A light-emitting device with a tunneling structure and a current spreading layer is disclosed. It includes an electrically conductive permanent substrate, an adhesive layer, an epitaxial structure, a tunneling structure and a current spreading layer. The adhesive la... | 04/24/2012 |
| 8154008 | Light emitting diode with improved structure A light emitting diode (LED) for minimizing crystal defects in an active region and enhancing recombination efficiency of electrons and holes in the active region includes non-polar GaN-based semiconductor layers grown on a non-polar substrate. The semiconductor lay... | 04/10/2012 |
| 8154009 | Light emitting structure including high-al content MQWH A GaN/AlN superlattice is formed over a GaN/sapphire template structure, serving in part as a strain relief layer for growth of subsequent layers (e.g., deep UV light emitting diodes). The GaN/AlN superlattice mitigates the strain between a GaN/sapphire template and... | 04/10/2012 |
| 8148714 | Light-emitting device and method for producing light emitting device A method for producing a light-emitting device, includes: performing, on a first substrate made of III-V group compound semiconductor, crystal growth of a laminated body including an etching easy layer contiguous to the first substrate and a light-emitting layer mad... | 04/03/2012 |
| 8148713 | Method for fabrication of semipolar (Al, In, Ga, B)N based light emitting diodes A yellow Light Emitting Diode (LED) with a peak emission wavelength in the range 560-580 nm is disclosed. The LED is grown on one or more III-nitride-based semipolar planes and an active layer of the LED is composed of indium (In) containing single or multi-quantum ... | 04/03/2012 |
| 8148712 | Group III nitride compound semiconductor stacked structure An object of the present invention is to obtain a group III nitride compound semiconductor stacked structure where a group III nitride compound semiconductor layer having good crystallinity is stably stacked on a dissimilar substrate. The group III nitride co... | 04/03/2012 |
| 8143613 | Organic light emitting device having multiple separate emissive layers An organic light emitting device having multiple separate emissive layers is provided. Each emissive layer may define an exciton formation region, allowing exciton formation to occur across the entire emissive region. By aligning the energy levels of each emissive l... | 03/27/2012 |
| 8143614 | GaN based light emitters with band-edge aligned carrier blocking layers Band-edge aligned carrier blocking layers are introduced into wurtzite or zinc blend Gallium Nitride based diode laser and LEDs in order to prevent thermionic emission and the overflow of carriers at elevated operating temperatures. These blocking layers are located... | 03/27/2012 |
| 8138493 | Optoelectronic semiconductor device The present invention provides an optoelectronic semiconductor device comprising at least one semiconductor nanowire, wherein the nanowire comprises a nanowire core and at least one shell layer arranged around at least a portion of the nanowire core. The nanowire co... | 03/20/2012 |
| 8129710 | Plasmon enhanced nanowire light emitting diode A nanowire light emitting diode (LED) and method of emitting light employ a plasmonic mode. The nanowire LED includes a nanowire having a semiconductor junction, a shell layer coaxially surrounding the nanowire, and an insulating layer, which is plasmonically thin, ... | 03/06/2012 |
| 8124958 | Method of fabricating semiconductor devices on a group IV substrate with controlled interface properties and diffusion tails Electronic and opto-electronic devices having epitaxially-deposited III/V compounds on vicinal group IV substrates and method for making same. The devices include an AlAs nucleating layer on a Ge substrate. The group IV substrate contains a p-n junction whose change... | 02/28/2012 |
| 8120011 | Opto-electronic device The present application relates to an opto-electronic device. The opto-electronic device includes a first light-emitting structure and a second light-emitting structure. The first light-emitting structure is capable of generating a first light having a first wavelen... | 02/21/2012 |
| 8120010 | Quantum dot electroluminescent device and method for fabricating the same A quantum dot electroluminescent device that includes a substrate, a quantum dot light-emitting layer disposed on the substrate, a first electrode which injects charge carriers into the quantum dot light-emitting layer, a second electrode which injects charge carrie... | 02/21/2012 |
| 8115192 | Light emitting device A light emitting device includes a stacked body including at least a light emitting layer made of Inx(AlyGa1-y)1-xP (0≦x≦1, 0≦y≦1), a p-type cladding layer made of Inx(AlyGa1-y) | 02/14/2012 |
| 8093580 | Semiconductor device and method of manufacturing the same A semiconductor device has a structure in which a light-emitting layer of an organic material or the like is sandwiched between a work function controlled single-wall carbon nanotube cathode encapsulating a donor having a low ionization potential and a work function... | 01/10/2012 |
| 8089061 | Quantum dot inorganic electroluminescent device An inorganic EL device is provided with a substrate, a first electrode, a first insulating layer, a light emitting layer, a second insulating layer and a second electrode. The inorganic EL light emitting device is characterized in that the light emitting layer conta... | 01/03/2012 |
| 8084763 | Optoelectronic device based on non-polar and semi-polar aluminum indium nitride and aluminum indium gallium nitride alloys A high-power and high-efficiency light emitting device with emission wavelength (λpeak) ranging from 280 nm to 360 nm is fabricated. The new device structure uses non-polar or semi-polar AlInN and AlInGaN alloys grown on a non-polar or semi-polar bulk Ga... | 12/27/2011 |
| 8080818 | Light emitting device A light emitting device includes: a first layer made of a semiconductor of a first conductivity type; a second layer made of a semiconductor of a second conductivity type; an active layer including a multiple quantum well provided between the first layer and the sec... | 12/20/2011 |
| 8080819 | LED package methods and systems Methods and systems are provided for LED modules that include an LED die integrated in an LED package with a submount that includes an electronic component for controlling the light emitted by the LED die. The electronic component integrated in the submount may incl... | 12/20/2011 |
| 8076667 | Efficient light extraction method and device A tight emitting device comprises at least one p-type layer and at least one n-type layer and a microlens array surface. A method for improving light efficiency of a light emitting device, comprises depositing polystyrene microspheres by rapid convection deposition ... | 12/13/2011 |
| 8071973 | Light emitting device having a lateral passivation layer Provided are a light emitting device, a light emitting device package, and a lighting system. The light emitting device includes a light emitting structure comprising a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an a... | 12/06/2011 |
| 8058639 | Nitride semiconductor element and method for production thereof A light-emitting apparatus of the present invention includes: a mounting base 260 which has a wire 265; and a nitride-based semiconductor light-emitting device flip-chip mounted on the mounting base 260. The nitride-based semiconductor light-emi... | 11/15/2011 |
| 8053756 | Nitride semiconductor light emitting element Provided is a nitride semiconductor light emitting element having an improved carrier injection efficiency from a p-type nitride semiconductor layer to an active layer by simple means from a viewpoint utterly different from the prior art. A buffer layer 2, an... | 11/08/2011 |
| 8053755 | Semiconductor heterostructure A strained semiconductor heterostructure (10) comprises an injection region comprising a first emitter layer (11) having p-type conductivity and a second emitter layer (12) having n-type conductivity, and a light generation layer (13) pos... | 11/08/2011 |
| 8044385 | Semiconductor light emitting device and method for manufacturing the same Disclosed is a semiconductor light emitting device. The semiconductor light emitting device comprises a first conductive semiconductor layer, a lower super lattice layer under the first conductive semiconductor layer, an active layer on the first conductive semicond... | 10/25/2011 |
| 8044381 | Light emitting diode (LED) A light-emitting diode (LED) includes a p-type layer, an n-type layer, and an active layer arranged between the p-type layer and the n-type layer. The active layer includes at least one quantum well adjacent to at least one modulation-doped layer. Alternatively, or ... | 10/25/2011 |
| 8044383 | Thin P-type gallium nitride and aluminum gallium nitride electron-blocking layer free gallium nitride-based light emitting diodes A light emitting diode (LED) having a p-type layer having a thickness of 100 nm or less, an n-type layer, and an active layer, positioned between the p-type layer and the n-type layer, for emitting light, wherein the LED does not include a separate electron blocking... | 10/25/2011 |
| 8044382 | Light-emitting device and method for manufacturing the same A light-emitting device includes an n-type silicon thin film (2), a silicon thin film (3), and a p-type silicon thin film (4). The silicon thin film (3) is formed on the n-type silicon thin film (2) and the p-type silicon thin film... | 10/25/2011 |
| 8044384 | Group III nitride based quantum well light emitting device structures with an indium containing capping structure Group III nitride based light emitting devices and methods of fabricating Group III nitride based light emitting devices are provided. The emitting devices include an n-type Group III nitride layer, a Group III nitride based active region on the n-type Group III nit... | 10/25/2011 |
| 8044380 | Nitride semiconductor light emitting device and fabrication method thereof Provided is a nitride semiconductor light emitting device including: a first nitride semiconductor layer; an active layer formed above the first nitride semiconductor layer; and a “C (carbon)”-doped second nitride semiconductor layer formed above the active laye... | 10/25/2011 |
| 8030640 | Nitride semiconductor light emitting device and method of manufacturing the same A nitride semiconductor light emitting device includes a substrate, a first conductivity type nitride semiconductor layer disposed on the substrate and including a plurality of V-pits placed in a top surface thereof, a silicon compound formed in the vertex region of... | 10/04/2011 |
| 8030639 | Nitride semiconductor light emitting device and fabrication method thereof Provided is a nitride semiconductor light emitting device including: a first nitride semiconductor layer; an active layer formed above the first nitride semiconductor layer; and a delta doped second nitride semiconductor layer formed above the active layer. Accordin... | 10/04/2011 |
| 8026506 | Thin-film transistor with channel layer formed by metal oxide film including indium, and method of manufacturing the same In a thin-film transistor comprising respective elements of: three electrodes of a source electrode, a drain electrode and a gate electrode; a channel layer; and a gate insulating film, at least the channel layer is formed by a metal oxide film including indium. The... | 09/27/2011 |
| 8022389 | Light source, and device In accordance with the invention, a light source for display and/or illumination is provided, the light source comprising a heterostructure including semiconductor layers, the heterostructure forming a waveguide between a first end and a second end, the heterostruct... | 09/20/2011 |
| 8022386 | Vertical topology light emitting device In a vertical topology light emitting device, an adhesion layer or adhesion structure is provided between one of the electrodes and the metal contact pad associated with that electrode. The vertical topology light emitting device further comprises a support layer, a... | 09/20/2011 |
| 8022388 | Broadband light emitting device lamps for providing white light output A multi-chip light emitting device (LED) lamp for providing white light includes first and second broadband LED chips. The first LED chip includes a multi-quantum well active region having a first plurality of alternating active and barrier layers. The first plurali... | 09/20/2011 |
| 8022387 | Composite semiconductor device having a thyristor structure A semiconductor device includes a light-emitting layer of a first conductivity type, a second conductivity type or non-doped type, a first contact layer of the second conductivity type disposed on the light-emitting layer and supplied with a voltage via a predetermi... | 09/20/2011 |
