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| Number | Title | Issue Date |
| 7411304 | Semiconductor interconnect having conductive spring contacts An interconnect for testing a semiconductor component includes a substrate, and interconnect contacts on the substrate configured to electrically engage component contacts on a semiconductor component. Each interconnect contact includes a compliant conductive layer ... | 08/12/2008 |
| 7323726 | Method and apparatus for coupling to a common line in an array A method and apparatus for coupling to a common line in an array. Gate structures of an integrated circuit are formed. Source and drain regions adjacent to the gate structures are implanted. A source contact from a metal Vss line to a source region is formed. Dopant... | 01/29/2008 |
| 7234511 | Modular heat exchanger having a brazed core and method for forming An improved modular heat exchanger suitable for automotive applications, and particularly radiators for heavy duty equipment, and methods for forming the modular heat exchanger. The modular heat exchanger construction incorporates a brazed core assembly composed of ... | 06/26/2007 |
| 7057214 | Light-activated semiconductor switches Semiconductor switches, such as thyristors, may be light activated by introducing the light into the switch via a groove having a sloped surface to receive the triggering light. The use of a sloped surface increases the surface path length between points of differen... | 06/06/2006 |
| 7002218 | Low capacitance ESD-protection structure under a bond pad An ESD-protection structure is located substantially under an integrated circuit bond pad. This ESD-protection structure is formed as a low capacitance structure by inserting a forward diode between the bond pad and the ESD clamp circuit. Placing the ESD-protection ... | 02/21/2006 |
| 6927427 | Bidirectional static switch responsive in quadrants Q4 and Q1 A monolithic bidirectional switch formed in an N-type semiconductor substrate, including, in a first area, a first vertical thyristor adjacent to a second vertical thyristor; a triggering area arranged on the front surface side, apart from the first area, including ... | 08/09/2005 |
| 6580100 | Voltage-controlled vertical bidirectional monolithic switch A vertical voltage-controlled bidirectional monolithic switch formed between the upper and lower surfaces of a semiconductor substrate surrounded with a peripheral wall, including: a first multiple-cell vertical IGBT transistor extending between a cathode... | 06/17/2003 |
| 6252258 | High power rectifier A high power rectifier device has an - drift layer on an N+ layer. A number of trench structures are recessed into the drift layer opposite the N+ layer; respective mesa regions separate each pair of trenches. Each trench structure includes oxide side-wal... | 06/26/2001 |
| 6137124 | Integrated vertical semiconductor component A vertical semiconductor component has an integrated switching device, which delivers an electric value correlating with the rear potential. The semiconductor component includes a doping region with a hole, which is free of the doping atoms of the doping ... | 10/24/2000 |
| 6078065 | Bilaterally controllable thyristor A specification is given of a bidirectionally controllable thyristor which is distinguished by improved decoupling between the two thyristor structures. In particular, the intention is that the switched-off structure cannot be triggered in an uncontrolled... | 06/20/2000 |
| 5838043 | ESD protection circuit located under protected bonding pad A circuit for protecting a bonding pad of a semiconductor device from ESD voltages is located under the pad to permit the space otherwise used for a protection circuit to be used for normal operating components. The protection circuit has a compact layout... | 11/17/1998 |
| 5835985 | Reverse conducting gate-turnoff thyristor A reverse conducting gate-turnoff thyristor includes a switching device section, a diode section, and an isolating section located between the switching device section and the diode section. The isolating section includes an impurity layer formed by contr... | 11/10/1998 |
| 5757033 | Bidirectional thyristor with MOS turn-off capability with a single gate A bidirectional thyristor structure with a single MOS gate controlled turn off capability. In a vertical conduction embodiment, the device has a six layer structure including a backside diffusion. One vertical conduction structure includes a single body r... | 05/26/1998 |
| 5629535 | Bidirectional thyristor with MOS turn-on and turn-off capability A bidirectional thyristor structure with a single MOS gate controlled turn-on and turn-off capability. In a vertical conduction embodiment, the device has a six layer structure including a backside diffusion. One vertical conduction structure includes a s... | 05/13/1997 |
| 5483087 | Bidirectional thyristor with MOS turn-off capability with a single gate A bidirectional thyristor structure with a single MOS gate controlled turn off capability. In a vertical conduction embodiment, the device has a six layer structure including a backside diffusion. One vertical conduction structure includes a single body r... | 01/09/1996 |
| 5463231 | Method of operating thyristor with insulated gates A thyristor with insulated gates includes turn-off and turn-on MOSFETs. The turn-on MOSFET has a turn-on gate employing a p-type base as a channel and extending over an n-type base and an n-type emitter. The turn-off MOSFET has n-type drain and source lay... | 10/31/1995 |
| 5369291 | Voltage controlled thyristor A voltage controlled thyristor includes an intrinsic layer of material between an anode and a cathode and a gate region between the intrinsic layer and the cathode comprising a lightly doped P type layer with more heavily doped P type regions extending th... | 11/29/1994 |
| 5298769 | GTO thyristor capable of preventing parasitic thyristors from being generated A GTO thyristor includes a p-type emitter layer, an n-type base layer, a p-type base layer and an n-type emitter layer. An additional n-type layer is formed on the p-type base layer next to the n-type emitter layer An additional p+ -type layer ... | 03/29/1994 |
| 5293051 | Photoswitching device including a MOSFET for detecting zero voltage crossing A switching device includes a thyristor and a MOSFET, and a voltage clamp circuit. The voltage clamp circuit includes an N+ type contact region formed in a surface layer of a N type substrate and electrically connected to a gate electrode of a... | 03/08/1994 |
| 5210432 | Insulated gate GTO thyristor According to this invention, there is disclosed an insulated gate GTO thyristor comprising a pnpn structure including a p-type emitter layer, an n-type base layer, a p-type base layer, and an n-type emitter layer. The thyristor has a first gate electrode ... | 05/11/1993 |
| 4994885 | Bidirectional triode thyristor A Triac comprising a semiconductor body having several regions of two opposite conductivity types, a first main electrode and a gate electrode on one major surface of the semiconductor body, and a second main electrode on the opposite major surface of the... | 02/19/1991 |
| 4857983 | Monolithically integrated semiconductor device having bidirectional conducting capability and method of fabrication The present invention relates generally to monolithically integrated insulated gate semiconductor devices and more particularly to an improved structure which provides for high current density, low voltage drop conduction in both forward and reverse direc... | 08/15/1989 |
| 4812893 | Triac desensitized with respect to re-striking risks on switching across a reactive load The invention provides a triac whose resistance to untimely striking in the presence of steep voltage fronts is increased. For this, a part of the gate electrode is provided above a five layer structure, a part above a four layer structure and finally a s... | 03/14/1989 |
| 4737834 | Thyristor with controllable emitter short-circuit paths inserted in the emitter A thyristor has a plurality of gate-controlled MIS-FET structures which serve the purpose of controlling emitter short-circuit paths with the objective of achieving stabilization short-circuits and, if necessary, quenching short-circuits. MIS-FET structur... | 04/12/1988 |
| 4641175 | Bidirectional power switch with optimized emitter spacing near control electrode A semiconductor device comprises first to third semiconductor layers of P, N and P conductivity types, first and second emitter regions of an N conductivity type, with predetermined patterns, these emitter regions being formed in the first and third semic... | 02/03/1987 |
| 4243999 | Gate turn-off thyristor A gate turn-off thyristor which comprises a semiconductor body having at least four contiguous layers, namely, a first layer of a first conductivity type, a second layer lying continguous to the first layer and having a second conductivity type, a third l... | 01/06/1981 |
| 4187515 | Semiconductor controlled rectifier A semiconductor controlled rectifier of an asymmetrical construction which, only when supplied with a reverse surge voltage, is turned on in the reverse direction comprising a semi-conductor body having three contiguous regions forming an inner region of ... | 02/05/1980 |
| 4157562 | Gate controlled bidirectional semiconductor switching device having two base regions each having a different depth from an adjacent surface A gate-controlled bidirectional switching device has two main terminals on opposite major surfaces of the device. A single gate terminal located adjacent one of the main terminals on one of the major surfaces receives a signal biased with respect to said ... | 06/05/1979 |
| 4066483 | Gate-controlled bidirectional switching device A gate-controlled bidirectional switching device has two main terminals on opposite major surfaces of the device. A single gate terminal located adjacent one of the main terminals on one of the major surfaces receives a signal biased with respect to said ... | 01/03/1978 |
| 4016593 | Bidirectional photothyristor device A bidirectional photothyristor device comprises a semiconductive substrate including an NPNPN quintuple layer in which projections of both the outer layers Ns in the stacking direction are not overlapped so as to define two quadruple layer regions each ha... | 04/05/1977 |
| 3972014 | Four quadrant symmetrical semiconductor switch A semiconductor switching device is disclosed which has symmetrical operating characteristics in four quadrants, and which is characterized by the substantial elimination of lateral switching currents. In the preferred embodiments, symmetrical semiconduct... | 07/27/1976 |
