Class 257/124 - Combined with field effect transistor structure

Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: Subject matter wherein the bidirectional rectifier with
No. of patents: 98
Last issue date: 04/03/2012

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Number	Title	Issue Date
8148748	Adjustable field effect rectifier An Adjustable Field Effect Rectifier uses aspects of MOSFET structure together with an adjustment pocket or region to result in a device that functions reliably and efficiently at high voltages without significant negative resistance, while also permitting fast reco...	04/03/2012
7943955	Monolithic semiconductor switches and method for manufacturing One aspect is monolithic semiconductor switches and method for manufacturing. One embodiment provides one semiconductor die with a first and a second FET. One of source/drain of the first FET and one of source/drain of the second FET are electrically coupled to at l...	05/17/2011
7910950	High voltage ESD LDMOS-SCR with gate reference voltage In an LDMOS-SCR ESD protection structure gate voltage of an ESD protection LDSCR is defined by connecting the gate to the source of a reference LDSCR. The reference LDSCR is implemented as a self-triggering device in which the snapback drain-source voltage (avalanch...	03/22/2011
7626214	Small-sized semiconductor device featuring protection circuit for MOSFET In a semiconductor device, a metal oxide semiconductor field effect transistor (MOSFET) is formed in a semiconductor substrate, and an isolation layer is formed on the semiconductor substrate so as to extend along a side of the semiconductor substrate. A first condu...	12/01/2009
7348628	Vertical channel semiconductor devices and methods of manufacturing the same Vertical channel semiconductor devices include a semiconductor substrate with a pillar having an upper surface. An insulated gate electrode is around a periphery of the pillar. The insulated gate electrode has an upper surface at a vertical level lower than the uppe...	03/25/2008
7324367	Memory cell and method for forming the same A semiconductor memory cell structure having 4 F2 dimensions and method for forming the same. The memory cell is formed on a surface of a substrate and includes an active region formed in the substrate, a semiconductor post formed on the surface of the su...	01/29/2008
7285804	Thyristor-based SRAM An integrated circuit structure includes a semiconductor substrate and a horizontal semiconductor fin on top of the semiconductor substrate. An access transistor gate and a thyristor gate are on top of the semiconductor substrate and in contact with the horizontal s...	10/23/2007
7276418	Memory cell and method for forming the same A semiconductor memory cell structure having 4F2 dimensions and method for forming the same. The memory cell is formed on a surface of a substrate and includes an active region formed in the substrate, a semiconductor post formed on the surface of the sub...	10/02/2007
7262478	Semiconductor device and manufacturing method thereof A semiconductor device and method of manufacturing the same includes an n−-single crystal silicon substrate, with an oxide film selectively formed thereon. On the oxide film, gate polysilicon is formed. The surface of the gate polysilicon is covered wit...	08/28/2007
7242040	Lateral trench field-effect transistors in wide bandgap semiconductor materials, methods of making, and integrated circuits incorporating the transistors A junction field effect transistor is described. The transistor is made from a wide bandgap semiconductor material. The device comprises source, channel, drift and drain semiconductor layers, as well as p-type implanted or Schottky gate regions. The source, channel,...	07/10/2007
7238577	Method of manufacturing self-aligned n and p type stripes for a superjunction device A method is provided for obtaining extremely fine pitch N-type and P-type stripes that form the voltage blocking region of a superjunction power device. The stripes are self-aligned and do not suffer from alignment tolerances. The self-aligned, fine pitch of the alt...	07/03/2007
7202528	Normally-off integrated JFET power switches in wide bandgap semiconductors and methods of making Wide bandgap semiconductor devices including normally-off VJFET integrated power switches are described. The power switches can be implemented monolithically or hybridly, and may be integrated with a control circuit built in a single-or multi-chip wide bandgap power...	04/10/2007
7184312	One transistor SOI non-volatile random access memory cell One aspect of the present subject matter relates to a memory cell, or more specifically, to a one-transistor SOI non-volatile memory cell. In various embodiments, the memory cell includes a substrate, a buried insulator layer formed on the substrate, and a transisto...	02/27/2007
7176513	Memory cell and method for forming the same A semiconductor memory cell structure and method for forming the same. The memory cell is formed on a surface of a substrate and includes an active region formed in the substrate, an epitaxial post formed on the surface of the substrate over the active region. The e...	02/13/2007
7170145	Method of manufacturing semiconductor device, flexible substrate, and semiconductor device A semiconductor chip 6 is mounted on a flexible substrate 1 wherein internal connecting electrodes 4 to be connected to protruding electrodes 7 on an element surface of the semiconductor chip 6 and wires 3 for connecting the...	01/30/2007
7141831	Snapback clamp having low triggering voltage for ESD protection An SCR device having a first P type region disposed in a semiconductor body and electrically connected to anode terminal of the device. At least one N type region is also disposed in the body adjacent the first P type region so as to form a PN junction having a widt...	11/28/2006
7130216	One-device non-volatile random access memory cell One aspect of the present subject matter relates to a one-device non-volatile memory cell. The memory cell includes a body region, a first diffusion region and a second diffusion region formed in the body region. A channel region is formed in the body region between...	10/31/2006
7119380	Lateral trench field-effect transistors in wide bandgap semiconductor materials, methods of making, and integrated circuits incorporating the transistors A junction field effect transistor is described. The transistor is made from a wide bandgap semiconductor material. The device comprises source, channel, drift and drain semiconductor layers, as well as p-type implanted or Schottky gate regions. The source, channel,...	10/10/2006
7091080	Depletion implant for power MOSFET A vertical MOSFET has a substrate of a first conductivity type. A channel region of a second conductivity type is diffused into the substrate. A gate is disposed at least partially over the channel region. A source region of a second conductivity type is disposed pr...	08/15/2006
7053423	Thyristor having a first emitter with relatively lightly doped portion to the base A thyristor-based semiconductor device exhibits a relatively increased base-emitter capacitance. According to an example embodiment of the present invention, a base region and an adjacent emitter region of a thyristor are doped such that the emitter region has a lig...	05/30/2006
7045844	Memory cell and method for forming the same A semiconductor memory cell structure having 4F2 dimensions and method for forming the same. The memory cell is formed on a surface of a substrate and includes an active region formed in the substrate, a semiconductor post formed on the surface of the sub...	05/16/2006
7042027	Gated lateral thyristor-based random access memory cell (GLTRAM) One aspect of the present subject matter relates to a memory cell, or more specifically, to a scalable GLTRAM cell that provides DRAM-like density and SRAM-like performance. According to various embodiments, the memory cell includes an access transistor and a gated,...	05/09/2006
7034351	Memory cell and method for forming the same A semiconductor memory cell structure and method for forming the same. The memory cell is formed on a surface of a substrate and includes an active region formed in the substrate, an epitaxial post formed on the surface of the substrate over the active region. The e...	04/25/2006
7030455	Integrated electromagnetic shielding device To isolate at least one electric or electronic element (16, 58), for example an interconnection integrated onto a semiconductor substrate (12), this device comprises at least one isolation means chosen from an isolating layer (84, 86, 90) extend...	04/18/2006
6979602	Method for making a recessed thyristor control port A semiconductor device is formed including a substrate having an upper surface, a thyristor region in the substrate and a control port adapted for capacitively coupling to at least a portion of the thyristor region via a dielectric material. According to an example ...	12/27/2005
6921935	Memory cell and method for forming the same A semiconductor memory cell structure and method for forming the same. The memory cell is formed on a surface of a substrate and includes an active region formed in the substrate, an epitaxial post formed on the surface of the substrate over the active region. The e...	07/26/2005
6917078	One transistor SOI non-volatile random access memory cell One aspect of the present subject matter relates to a memory cell, or more specifically, to a one-transistor SOI non-volatile memory cell. In various embodiments, the memory cell includes a substrate, a buried insulator layer formed on the substrate, and a transisto...	07/12/2005
6914270	IGBT with PN insulation and production method The IGBT (insulated gate bipolar transistor) has a weakly doped drift zone of a first conductivity formed in a weakly doped semiconductor substrate of the same conductivity. A highly doped first well zone of the first conductivity and a highly doped second well zone...	07/05/2005
6912151	Negative differential resistance (NDR) based memory device with reduced body effects A memory device (such as an SRAM) using negative differential resistance (NDR) elements is disclosed. Body effect performances for NDR FETs (and other FETs) that may be used in such device are enhanced by floating a body of some/all the NDR FETs. Various embodiments...	06/28/2005
6906354	T-RAM cell having a buried vertical thyristor and a pseudo-TFT transfer gate and method for fabricating the same A T-RAM array having a plurality of T-RAM cells is presented where each T-RAM cell has dual devices. Each T-RAM cell is planar and has a buried vertical thyristor and a horizontally stacked pseudo-TFT transfer gate. The buried vertical thyristor is located beneath t...	06/14/2005
6838321	SEMICONDUCTOR SUBSTRATE WITH DEFECTS REDUCED OR REMOVED AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE CAPABLE OF BIDIRECTIONALLY RETAINING BREAKDOWN VOLTAGE AND METHOD OF MANUFACTURING THE SAME An N−-type silicon substrate (1) has a bottom surface and an upper surface which are opposed to each other. In the bottom surface of the N−-type silicon substrate (1), a P-type impurity diffusion layer (3) of high conce...	01/04/2005
6835997	Thyristor-based device with trench dielectric material A thyristor-based semiconductor device includes a thyristor body that has at least one region in the substrate and a thyristor control port in a trenched region of the device substrate. According to an example embodiment of the present invention, the trench is at le...	12/28/2004
6815734	Varied trench depth for thyristor isolation A semiconductor device is formed having a thyristor and trench arranged to electrically insulate an emitter region of the thyristor from another circuit structure. In one example embodiment of the present invention, a trench having a bottom portion with two differen...	11/09/2004
6737724	Semiconductor device and method of manufacturing the same Disclosed is a semiconductor device including a transistor structure including an epitaxial silicon layer formed on a main surface of an n-type semiconductor substrate, source-drain diffusion layers formed on at least the epitaxial silicon layer, a channel region fo...	05/18/2004
6677616	Fabrication method of thin film transistor substrate for X-ray detector A method of fabricating a thin film transistor substrate for an X-ray detector reduces the number of steps in etching processes using masks. In the method, a gate line, a gate pad and a gate electrode of a thin film transistor are simultaneously formed on...	01/13/2004
6674131	Semiconductor power device for high-temperature applications In a SiC substrate (10), a first active region (12) composed of n-type heavily doped layers (12a) and undoped layers (12b), which are alternately stacked, and a second active region (13) composed of p-type heavily doped layers (13a) and undoped layers (13...	01/06/2004
6661036	Semiconductor switches with evenly distributed fine control structures Semiconductor structure configured as a semiconductor switch that can be used in various forms to switch currents. Semiconductor switch comprising non-doped or very lightly doped semiconductor crystal for switching currents in at least one direction at hi...	12/09/2003
6617661	High voltage component and method for making same A high-voltage component and a method for its manufacture. The component functions to switch currents at high voltages. The component is composed of partial components that are connected in series and are laterally supported on a self-supporting semicondu...	09/09/2003
6580100	Voltage-controlled vertical bidirectional monolithic switch A vertical voltage-controlled bidirectional monolithic switch formed between the upper and lower surfaces of a semiconductor substrate surrounded with a peripheral wall, including: a first multiple-cell vertical IGBT transistor extending between a cathode...	06/17/2003
6576935	Bidirectional semiconductor device and method of manufacturing the same A bidirectional semiconductor device facilitates making a current flow from the first MOSFET to the second MOSFET and vice versa across low on-resistance and exhibits a high breakdown voltage. The bidirectional semiconductor device includes a first n-chan...	06/10/2003

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Class 257/124 - Combined with field effect transistor structure