Bizarre Patents
Mountable Printable Placard With Headband
A resilient headband in a shape for being mounted on the head of the user. The headband is equipped with a longitudinal slotted member for holding a placard.
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| Number | Title | Issue Date |
| 7932537 | Process-variation tolerant diode, standard cells including the same, tags and sensors containing the same, and methods for manufacturing the same Process variation-tolerant diodes and diode-connected thin film transistors (TFTs), printed or patterned structures (e.g., circuitry) containing such diodes and TFTs, methods of making the same, and applications of the same for identification tags and sensors are di... | 04/26/2011 |
| 7842967 | Semiconductor device used in step-up DC-DC converter, and step-up DC-DC converter A power supply device is disclosed that is able to satisfy the power requirements of a device in service and has high efficiency. The power supply device includes a first power supply; a voltage step-up unit that steps up an output voltage of the first power ... | 11/30/2010 |
| 7671379 | Semiconductor system for voltage limitation A semiconductor system for voltage limitation includes a first cover electrode, a highly p-doped semiconductor layer that is connected to the first cover electrode, a slightly n-doped semiconductor layer that is connected to the highly p-doped semiconductor layer an... | 03/02/2010 |
| 7622753 | Ignition circuit A component formed in a substrate of a first conductivity type, having two inputs and two outputs and: a first diode having its anode connected to a first input and having its cathode connected to a first output; a second diode having its anode connected to a second... | 11/24/2009 |
| 7598536 | Semiconductor device having load resistor and method of fabricating the same A semiconductor device includes a semiconductor substrate having a resistor region, an isolation layer disposed in the resistor region, the isolation layer defining active regions, first conductive layer patterns disposed on the active regions, a second conductive l... | 10/06/2009 |
| 7439563 | High-breakdown-voltage semiconductor device A high-breakdown-voltage semiconductor device comprises a high-resistance semiconductor layer, trenches formed on the surface thereof in a longitudinal plane shape and in parallel, first regions formed on the semiconductor layer to be sandwiched between adjacent one... | 10/21/2008 |
| 7436004 | Semiconductor device An aspect of the present invention provides a semiconductor device that includes, a first semiconductor body of a first conductivity type, a first switching mechanism provided on the first semiconductor body, configured and arranged to switch on/off current flowing ... | 10/14/2008 |
| 7427786 | Diode device utilizing bellows A diode device is disclosed, comprising a pair of electrodes separated by bellows. The corrugated walls of the bellows create a tortuous thermal pathway thereby reducing parasitic heat losses and increasing the device's efficiency. The bellows' also allow for a cont... | 09/23/2008 |
| 7402845 | Cascoded rectifier package A semiconductor package that includes a compound component and a diode arranged in a cascode configuration to function as a rectifier. ... | 07/22/2008 |
| 7385232 | CMOS imager with enhanced transfer of charge and low voltage operation and method of formation A dopant gradient region of a first conductivity type and a corresponding channel impurity gradient below a transfer gate and adjacent a charge collection region of a CMOS imager photodiode are disclosed. The channel impurity gradient in the transfer gate provides a... | 06/10/2008 |
| 7385231 | Porous thin-film-deposition substrate, electron emitting element, methods of producing them, and switching element and display element A method of producing a porous thin-film-deposition substrate, which has the steps of: placing onto a substrate that has an electrostatic charge on its surface, fine particles with a surface electrostatic charge opposite to the electrostatic charge of the substrate ... | 06/10/2008 |
| 7381998 | Semiconductor integrated circuit device A semiconductor integrated circuit device according to the present invention includes a diode in a second island region. The anode region of the diode and the dividing region in a first island region having a horizontal PNP transistor are electrically connected to e... | 06/03/2008 |
| 7319282 | Switch circuit A switch circuit for controlling the supply of electrical power from an electrical power source to a load includes a power supply switch comprising input, output and control terminals. The circuit further includes an electronic switching device connected to the cont... | 01/15/2008 |
| 7217980 | CMOS silicon-control-rectifier (SCR) structure for electrostatic discharge (ESD) protection An electrostatic discharge protection device, including a silicon-control-rectifier, in complementary metal-oxide semiconductor (CMOS) process is disclosed. in one embodiment of the present invention, the protection device includes a semiconductor substrate having a... | 05/15/2007 |
| 7193255 | Semiconductor device with floating conducting region placed between device elements Floating conducting regions at floating potentials are placed on a substrate surface between adjacent conducting regions to which predetermined potentials are applied. This makes it possible to block the spread of a depletion layer to the substrate between the condu... | 03/20/2007 |
| 7157785 | Semiconductor device, the method of manufacturing the same, and two-way switching device using the semiconductor devices A semiconductor device is disclosed that reduces the reverse leakage current caused by reverse bias voltage application and reduces the on-voltage of the IGBT. A two-way switching device using the semiconductor devices is provided, and a method of manufacturing the ... | 01/02/2007 |
| 7148558 | Versatile system for limiting mobile charge ingress in SOI semiconductor structures Disclosed are apparatus and method for limiting mobile charge (314) ingress within a silicon-on-insulator (SOI) substrate (300). A mask (308) is applied to the substrate to form an aperture (210) over a desired portion of the substrate ne... | 12/12/2006 |
| 7145185 | Voltage-controlled bidirectional switch The invention concerns a voltage-controlled triac-type component, formed in a N-type substrate (1) comprising first and second vertical thyristors (Th1, Th2), a first electrode (A2) of the first thyristor, on the front side of the compone... | 12/05/2006 |
| 7126204 | Integrated semiconductor circuit with an electrically programmable switching element The invention relates to a semiconductor circuit (20) having an electrically programmable switching element (10), an “antifuse”, which includes a substrate electrode (2), produced in a substrate (1) which can be electrically biased wi... | 10/24/2006 |
| 7053404 | Active semiconductor component with an optimized surface area A semiconductor component in which the active junctions extend along at least one cylinder perpendicular to the main surfaces of a semiconductor chip substantially across the entire thickness thereof, said cylinder(s) having a cross-section with an undulated closed ... | 05/30/2006 |
| 7038234 | Thermoelectric module with Si/SiGe and B4C/B9C super-lattice legs A super-lattice thermoelectric device. The device includes p-legs and n-legs, each leg having a large number of alternating layers of two materials with differing electron band gaps. The n-legs in the device are comprised of alternating layers of silicon and silicon... | 05/02/2006 |
| 6963087 | Pulsed bistable bidirectional electronic switch The invention concerns a pulsed bistable bidirectional electronic switch comprising a monolithic semiconductor circuit formed from a substrate (1) whereof the rear surface (A2) is coated with a metallization connected to earth. Said circuit comprises a... | 11/08/2005 |
| 6906354 | T-RAM cell having a buried vertical thyristor and a pseudo-TFT transfer gate and method for fabricating the same A T-RAM array having a plurality of T-RAM cells is presented where each T-RAM cell has dual devices. Each T-RAM cell is planar and has a buried vertical thyristor and a horizontally stacked pseudo-TFT transfer gate. The buried vertical thyristor is located beneath t... | 06/14/2005 |
| 6825504 | Semiconductor integrated circuit device and method of manufacturing the same In order to eliminate the difference in ESD resistance caused by polarities of excessive voltages applied to an external terminal and enhance ESD resistance of a semiconductor integrated circuit device to both the positive and negative overvoltages, a protection ele... | 11/30/2004 |
| 6723585 | Leadless package A variety of leadless packaging arrangements and methods of packaging integrated circuits in leadless packages are disclosed. The described lead frames are generally arranged such that each device area has a plurality of contacts but no die attach pad. With this arr... | 04/20/2004 |
| 6603153 | Fast recovery diode and method for its manufacture A soft recovery diode is made by first implanting helium into the die to a location below the P/N junction and the implant annealed. An E-beam radiation process then is applied to the entire wafer and is also annealed. The diode then has very soft recover... | 08/05/2003 |
| 6593600 | Responsive bidirectional static switch A monolithic bidirectional switch formed in a semiconductor substrate of type N, including a first main vertical thyristor, the rear surface layer of which is of type P, a second main vertical thyristor, the rear surface layer of which is of type N, an au... | 07/15/2003 |
| 6590349 | Bidirectional flip-flop A bidirectional switch, including a first bidirectional switch between two power terminals of the switch, a low-voltage storage element between a first power terminal and a control terminal of the switch, and a control stage adapted to cause, upon each ha... | 07/08/2003 |
| 6583496 | Single-control monolithic component for a composite bridge A monolithic component including two thyristors of a composite bridge connected to an A.C. voltage terminal by a common terminal corresponding to a common rear surface metallization forming an electrode of opposite biasing of each thyristor. An isolating ... | 06/24/2003 |
| 6559481 | Semiconductor device for precise measurement of a forward voltage effect A semiconductor device such as an IGBT, for realizing measurement precision for forward voltage effect characteristics using a relatively small current. It includes a second conductivity type of first anode region formed to partially constitute the upper ... | 05/06/2003 |
| 6437383 | Dual trench isolation for a phase-change memory cell and method of making same The invention relates to a phase-change memory device. The device includes a double-trench isolation structure around the diode stack that communicates to the lower electrode. The present invention also relates to a method of making a phase-change memory ... | 08/20/2002 |
| 6396084 | Structure of semiconductor rectifier A semiconductor rectifier includes a substrate of a first conductivity type; a current path layer of the first conductivity type formed near the surface of the substrate; a current block layer of a second conductivity type laterally enclosing the current ... | 05/28/2002 |
| 6388276 | Reverse conducting thyristor Providing a reverse conducting thyristor, wherein a diode and a GTO thyristor are reverse parallel-connected, with which it is possible to reduce a surface area size of a separation portion and avoid variations in insulation characteristics. A separation ... | 05/14/2002 |
| 6262443 | Monolithic protected rectifying bridge The present invention relates to a semiconducting structure constituting a protected rectifying bridge implemented in an N-type semiconductor substrate divided into first, second, and third wells by vertical P-type isolating walls, in which the rear surfa... | 07/17/2001 |
| 6180964 | Low leakage wire bond pad structure for integrated circuits An improved bond pad structure for semiconductor devices provides improved electrical isolation between adjacent bond pads by incorporating a pair of pn junctions between the pad and substrate. The pn junctions are defined by a first well of either P of N... | 01/30/2001 |
| 6091086 | Reverse blocking IGBT A method of forming a power integrated circuit device (100) including a semiconductor layer of first conductivity type. The semiconductor layer includes a front-side surface (103), a backside surface (116), and a scribe region (117). The semiconductor lay... | 07/18/2000 |
| 5945723 | Composite controlled semiconductor device In a composite controlled semiconductor device having an insulated gate and a power conversion device using the same, a p type semiconductor region forming no channel is provided in the composite device structure between a plurality of p type semiconducto... | 08/31/1999 |
| 5883401 | Monolithic semiconductor switch and supply circuit component A monolithic semiconductor component has a first thyristor having a gate, an anode and a cathode. The gate is connected to the cathode through a first resistor and to the anode through the series connection of a zener diode and a second thyristor. The thy... | 03/16/1999 |
| 5859446 | Diode and power converting apparatus In a diode, the backward length L of an anode electrode in a region, where a semiconductor layer of a p+ conductivity type and an anode electrode do not contact each other, is made longer than the diffusion length of holes in a semiconductor l... | 01/12/1999 |
| 5838110 | Apparatus and method for starting and controlling a fluorescent tube A starter unit for a fluorescent tube includes in parallel across two terminals, first and second main thyristors head-to-tail connected and a zener protection diode. The gate of the first thyristor is connected to one of the terminals through a resistor ... | 11/17/1998 |
