Did You Know...
...that in the early 1940s GE engineer James Wright was charged with a task of utmost importance to the war effort: develop a cheap substitute for rubber that could be used to produce tires, gas masks and a whole host of military gear. Wright tackled the task diligently -- and wound up inventing Silly Putty.
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| Number | Title | Issue Date |
| 7365410 | Semiconductor structure having a metallic buffer layer and method for forming A method for forming a semiconductor structure including providing a semiconductor substrate, forming a metallic buffer layer over the semiconductor substrate, forming an amorphous semiconductor layer over the metallic buffer layer, and recrystallizing the amorphous... | 04/29/2008 |
| 7332749 | Junction-gate type static induction thyristor and high-voltage pulse generator using such junction-gate type static induction thyristor A compact, inexpensive static induction thyristor (SIThy) which is less likely to be broken down at a high voltage rise-up rate during operation and which is used in a high-voltage pulse generator capable of generating a high-voltage short pulse is provided. Thickne... | 02/19/2008 |
| 7317213 | Semiconductor device having super junction structure and method for manufacturing the same A semiconductor device includes: a center region; a periphery region; and a semiconductor layer including pairs of a first region having a first impurity amount and a second region having a second impurity amount. The first and the second regions are alternately ali... | 01/08/2008 |
| 7282386 | Schottky device and method of forming A Schottky device having a plurality of unit cells, each having a Schottky contact portion, surrounded by a termination structure that causes depletion regions to form in a vertical and horizontal direction, relative to a surface of the device, during a reverse bias... | 10/16/2007 |
| 7262429 | Thz detection employing modulation doped quantum well device structures An improved THz detection mechanism includes a heterojunction thyristor structure logically formed by an n-type quantum-well-base bipolar transistor and p-type quantum-wellbase bipolar transistor arranged vertically to share a common collector region. Antenna elemen... | 08/28/2007 |
| 7158220 | Three-dimensional memory system-on-a-chip The present invention provides a three-dimensional memory (3D-M) system-on-a-chip (SoC). It takes full advantage of the difference in the number of interconnect levels between the embedded processor (eP) and embedded memory (eM) in an SoC chip. The un-used interconn... | 01/02/2007 |
| 7145185 | Voltage-controlled bidirectional switch The invention concerns a voltage-controlled triac-type component, formed in a N-type substrate (1) comprising first and second vertical thyristors (Th1, Th2), a first electrode (A2) of the first thyristor, on the front side of the compone... | 12/05/2006 |
| 7138836 | Hot carrier injection suppression circuit A method of preventing Hot Carrier Injection in input/output connections on low voltage integrated circuits. As integrated circuit voltages drop generally so does the external voltages that those circuits can tolerate. By placing input/output devices, in series, ext... | 11/21/2006 |
| 7126166 | High voltage lateral FET structure with improved on resistance performance In one embodiment, a lateral FET cell is formed in a body of semiconductor material. The body of semiconductor material includes alternating layers of opposite conductivity type that extend between a trench drain region and a trench gate structure. The trench gate s... | 10/24/2006 |
| 7098108 | Semiconductor device having reduced effective substrate resistivity and associated methods A semiconductor device includes at least one device active region formed in a first surface of a semiconductor substrate, an electrical contact layer on a second surface of the semiconductor substrate, and at least one resistivity-lowering body positioned in a corre... | 08/29/2006 |
| 7064384 | Semiconductor device A semiconductor device comprises: a first main electrode; a second main electrode; a semiconductor base region of a first conductivity type; a gate electrode provided in a trench through an insulating film, the trench being formed to penetrate the semiconductor base... | 06/20/2006 |
| 7057214 | Light-activated semiconductor switches Semiconductor switches, such as thyristors, may be light activated by introducing the light into the switch via a groove having a sloped surface to receive the triggering light. The use of a sloped surface increases the surface path length between points of differen... | 06/06/2006 |
| 7053423 | Thyristor having a first emitter with relatively lightly doped portion to the base A thyristor-based semiconductor device exhibits a relatively increased base-emitter capacitance. According to an example embodiment of the present invention, a base region and an adjacent emitter region of a thyristor are doped such that the emitter region has a lig... | 05/30/2006 |
| 7038234 | Thermoelectric module with Si/SiGe and B4C/B9C super-lattice legs A super-lattice thermoelectric device. The device includes p-legs and n-legs, each leg having a large number of alternating layers of two materials with differing electron band gaps. The n-legs in the device are comprised of alternating layers of silicon and silicon... | 05/02/2006 |
| 7020355 | Switchable surfaces A substrate having a surface with reversibly switchable properties. The surface comprises a nanolayer of a material that switches from a first conformation state to a second conformation state when an external stimulus is applied. When the nanolayer is in the first ... | 03/28/2006 |
| 7002379 | I/O circuit using low voltage transistors which can tolerate high voltages even when power supplies are powered off An apparatus for providing bias voltages for input/output (I/O) connections on low voltage integrated circuits. In one embodiment, the invention comprises an I/O pad, a pull-down transistor device that has a protective transistor coupled to said I/O pad, and a pull-... | 02/21/2006 |
| 7002218 | Low capacitance ESD-protection structure under a bond pad An ESD-protection structure is located substantially under an integrated circuit bond pad. This ESD-protection structure is formed as a low capacitance structure by inserting a forward diode between the bond pad and the ESD clamp circuit. Placing the ESD-protection ... | 02/21/2006 |
| 6995408 | Bidirectional photothyristor chip A Schottky barrier diode 44 is formed between a P-gate diffusion region 33 and an N-type silicon substrate 31 in a photothyristor on a CH1 side and a photothyristor on a CH2 side. With this arrangement, the injection of minority ca... | 02/07/2006 |
| 6965130 | Alternating implant ring terminations A semiconductor device including a semiconductive body having formed therein an active region and a termination feature which includes spaced field rings disposed around the active region and diffusion rings of the same conductivity type as, but different conductivi... | 11/15/2005 |
| 6924177 | Method for producing a thyristor A thyristor having a first zone, a second zone, a third zone, and a fourth zone. At least one control electrode is connected to the second and/or third zone. In order to reduce the static and dynamic power loss in a symmetrical thyristor, it is proposed that a field... | 08/02/2005 |
| 6914271 | High-voltage bidirectional switch A bidirectional switch for switching an A.C. voltage at a load, including a monolithic component, formed in an N-type substrate, including a first vertical thyristor; a second vertical thyristor; a P-type triggering region formed opposite to the cathode of the first... | 07/05/2005 |
| 6870202 | Surge protection semiconductor device A pnpn thyristor element Thy1 and six pn diode elements D1, D2, D3, D4, D5, and D6 are formed in a semiconductor substrate of a first conductivity type, and separated into six regions by a diffusion layer of a second ... | 03/22/2005 |
| 6838707 | Bi-directional silicon controlled rectifier for electrostatic discharge protection A bi-directional silicon controlled rectifier formed in a silicon layer and disposed over shallow trench isolations and therefore electrically isolated from the substrate to be insensitive to substrate noise for electrostatic discharge protection an electrostatic di... | 01/04/2005 |
| 6700141 | Semiconductor device A reliable super-junction semiconductor device is provided that facilitates relaxing the tradeoff relation between the on-resistance and the breakdown voltage and improving the avalanche withstanding capability under an inductive load. The super-junction ... | 03/02/2004 |
| 6486501 | Component with rectifying function, fulfilled by means of charge transport by ions The invention relates to a component having a rectifying function, fulfilled by means of charge transfer by ions. To this end, the component is composed of multiple layers which have, successively, an asymmetric energy level course, and an electric field ... | 11/26/2002 |
| 6066863 | Lateral semiconductor arrangement for power IGS A lateral semiconductor device, such as an LIGBT, LMOSFET, lateral bipolar transistor, lateral thyristor, or lateral MOS control thyristor, includes a device area surrounded by an n-type region in an n-channel lateral semiconductor device or by a p-type r... | 05/23/2000 |
| 6037613 | Bidirectional thyristor device In a bidirectional photothyristor formed on a single N type silicon substrate, a distance between a P-gate diffusion region of one thyristor and an anode diffusion region of another thyristor opposed thereto is set to be 40 to 1,000 μm, preferably, 70 to... | 03/14/2000 |
| 5955750 | Four-region (PNPN) semiconductor device A four-region (PNPN) semiconductor device structure that provides greater flexibility in the setting of PN junction breakdown conditions. The four-region (PNPN) semiconductor device includes an additional N-type body at the junction between the inner N-ty... | 09/21/1999 |
| 5952728 | Thermoelectric conversion module having channels filled with semiconducting material and insulating fillers A thermoelectric conversion module having a large capacity and a curved surface which can be secured to a corresponding curved surface of a base member is manufactured by inserting N type and P type semiconductor strips into through holes formed in a hone... | 09/14/1999 |
| 5777346 | Metal oxide semiconductor controlled thyristor with an on-field effect transistor in a trench One embodiment of a metal oxide semiconductor controlled thyristor in accordance with the present invention has a semiconductor wafer with opposing first and second surfaces. The wafer includes first through sixth sequential regions which are disposed one... | 07/07/1998 |
| 5757033 | Bidirectional thyristor with MOS turn-off capability with a single gate A bidirectional thyristor structure with a single MOS gate controlled turn off capability. In a vertical conduction embodiment, the device has a six layer structure including a backside diffusion. One vertical conduction structure includes a single body r... | 05/26/1998 |
| 5705835 | Semiconductor device and method of manufacturing the same A second region 3 is formed via a buffer layer 3a on a first region 2 formed with an anode electrode 1 on the rear and a third region 4 like a well is formed on the surface of the second region 3. A fourth region 15 like a well is formed at the center on ... | 01/06/1998 |
| 5696391 | Overload protection circuit A protection device against overloads that may occur on an interface between a telephone exchange and line switches connected to a subscriber's line, comprises a single protection circuit on the subscriber side of the line switches with respect to the int... | 12/09/1997 |
| 5629535 | Bidirectional thyristor with MOS turn-on and turn-off capability A bidirectional thyristor structure with a single MOS gate controlled turn-on and turn-off capability. In a vertical conduction embodiment, the device has a six layer structure including a backside diffusion. One vertical conduction structure includes a s... | 05/13/1997 |
| 5483087 | Bidirectional thyristor with MOS turn-off capability with a single gate A bidirectional thyristor structure with a single MOS gate controlled turn off capability. In a vertical conduction embodiment, the device has a six layer structure including a backside diffusion. One vertical conduction structure includes a single body r... | 01/09/1996 |
| 5477064 | Thyristor An object of the present invention is to provide a semiconductor device which is designed so as to increase a maximum controllable current and decrease hold current without degrading its characteristic and to provide a method of manufacturing such a semic... | 12/19/1995 |
| 5428228 | Method of operating thyristor with insulated gates A thyristor with insulated gates includes turn-off and turn-on MOSFETs. The turn-on MOSFET has a turn-on gate employing a p-type base as a channel and extending over an n-type base and an n-type emitter. The turn-off MOSFET has n-type drain and source lay... | 06/27/1995 |
| 5426314 | Insulated gate control static induction thyristor A static induction thyristor has a first semiconductor area having a high impurity concentration of a first conductivity type. A second semiconductor area having low impurity concentration is formed adjacent to the first semiconductor area. A third semico... | 06/20/1995 |
| 5409852 | Method of Manufacturing three dimensional integrated device and circuit structures A set of three-dimensional structures and devices may be wired together to perform a wide variety of circuit functions such as SRAMs, DRAMs, ROMs and PLAs. Both N-Channel and P-Channel transistors can be made. The P-channel devices are fabricated conventi... | 04/25/1995 |
| 4286279 | Multilayer semiconductor switching devices The specification discloses semiconductor switching devices having more than five layers of alternating semiconductor conductivity types and which do not utilize substantial lateral switching currents during the operation thereof. Ones of the exterior lay... | 08/25/1981 |
