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| Number | Title | Issue Date |
| 8168965 | Semiconductor device and method using nanotube contacts A semiconductor device includes at least one semiconductor layer, a metal layer in electrical contact with the semiconductor layer, and a carbon nanotube contact layer interposed between the metal layer and the semiconductor layer. The contact layer electrically cou... | 05/01/2012 |
| 8154007 | Silicon-quantum-dot semiconductor near-infrared photodetector A mesoporous silica having adjustable pores is obtained to form a template and thus a three-terminal metal-oxide-semiconductor field-effect transistor (MOSFET) photodetector is obtained. A gate dielectric of a nano-structural silicon-base membrane is used as infrare... | 04/10/2012 |
| 8124957 | Low resistance tunnel junctions in wide band gap materials and method of making same A low resistance tunnel junction that uses a natural polarization dipole associated with dissimilar materials to align a conduction band to a valence band is disclosed. Aligning the conduction band to the valence band of the junction encourages tunneling across the ... | 02/28/2012 |
| 8120009 | Nanowhiskers with PN junctions, doped nanowhiskers, and methods for preparing them Nano-engineered structures are disclosed, incorporating nanowhiskers of high mobility conductivity and incorporating pn junctions. In one embodiment, a nanowhisker of a first semiconducting material has a first band gap, and an enclosure comprising at least one seco... | 02/21/2012 |
| 8101939 | GaN single-crystal substrate and method for producing GaN single crystal A GaN single-crystal substrate has a substrate surface in which polarity inversion zones are included. The number density of the polarity inversion zones in the substrate surface is not more than 20 cm−2. A GaN single crystal production method includes ... | 01/24/2012 |
| 8093579 | Semiconductor chip having a reduced band offset in its p-doped region and method for producing the semiconductor chip A semiconductor chip (1) comprises a p-doped region (I) having a cladding layer (18) and a contact layer (21) between which a first interlayer (19) and a second interlayer (20) are arranged. A concentration of a first material comp... | 01/10/2012 |
| 7999249 | Nitride semiconductor light emitting device with surface texture and its manufacture A nitride semiconductor light emitting device includes: a substrate for growing nitride semiconductor of a hexagonal crystal structure; a first nitride semiconductor layer of a first conductivity type formed above the substrate; an active layer formed on the first n... | 08/16/2011 |
| 7985964 | Light-emitting semiconductor device The present invention discloses a light-emitting semiconductor device, includes: a first electrode that is made of a high reflective metal; a second electrode; a tunnel junction layer coupling to the first electrode through a first ohmic contact and generating a tun... | 07/26/2011 |
| RE42422 | Light emitting diode having a transparent substrate A light emitting diode having a transparent substrate and a method for manufacturing the same. The light emitting diode is formed by creating two semiconductor multilayers and bonding them. The first semiconductor multilayer is formed on a non-transparent substrate.... | 06/07/2011 |
| 7947971 | Quantum well MOSFET channels having uni-axial strain caused by metal source/drains, and conformal regrowth source/drains Embodiments described include straining transistor quantum well (QW) channel regions with metal source/drains, and conformal regrowth source/drains to impart a uni-axial strain in a MOS channel region. Removed portions of a channel layer may be filled with a junctio... | 05/24/2011 |
| 7745813 | Nanostructures and methods for manufacturing the same A resonant tunneling diode, and other one dimensional electronic, photonic structures, and electromechanical MEMS devices, are formed as a heterostructure in a nanowhisker by forming length segments of the whisker with different materials having different band gaps.... | 06/29/2010 |
| 7649193 | Semiconductor body and semiconductor chip comprising a semiconductor body A semiconductor body (2), comprising a semiconductor layer sequence with an active region (3) suitable for generating radiation. The semiconductor layer sequence comprises two contact layers (6, 7), between which the active region is arranged. T... | 01/19/2010 |
| 7633080 | Method to assemble structures from nano-materials Numerous embodiments of a method to assemble nano-materials on a platform are described. In one embodiment, a nano-material is functionalized with a first bondable group. The functionalized nano-material is disposed on an assembly platform having an electrode to for... | 12/15/2009 |
| 7589345 | Nitride-based compound semiconductor substrate and method for fabricating the same A nitride-based compound semiconductor substrate mainly used for an epitaxial growth of a nitride semiconductor and a method for fabricating the same are disclosed. The nitride-based compound semiconductor substrate has a composition of AlxGa1-x | 09/15/2009 |
| 7576352 | Method for producing compound semiconductor wafer and compound semiconductor device A method for producing a compound semiconductor wafer used for production of HBT by vapor growth of a sub-collector layer, a collector layer, a base layer and an emitter layer in this turn on a compound semiconductor substrate using MOCVD method wherein the base lay... | 08/18/2009 |
| 7560725 | Method for fabricating group III nitride compound semiconductors and group III nitride compound semiconductor devices A first Group III nitride compound semiconductor layer 31 is etched, to thereby form an island-like structure such as a dot-like, stripe-shaped, or grid-like structure, so as to provide a trench/post. Thus, a second Group III nitride compound layer 32 ... | 07/14/2009 |
| 7482617 | Optical semiconductor device and fabrication method thereof In order to prevent As/P replacement at the boundary face of a re-grown semiconductor layer and avoid a crystalline defect caused by the replacement, there is provided an optical semiconductor device comprising: a semiconductor substrate; a striped stacking body inc... | 01/27/2009 |
| 7459718 | Field effect transistor A FET includes a nitride semiconductor in which leak current is reduced and breakdown voltage is improved. The FET is formed from a substrate, a buffer layer made of a nitride semiconductor, a first semiconductor layer made of a nitride semiconductor, and a second s... | 12/02/2008 |
| 7432522 | Nanowhiskers with pn junctions, doped nanowhiskers, and methods for preparing them Nano-engineered structures are disclosed, incorporating nanowhiskers of high mobility conductivity and incorporating pn junctions. In one embodiment, a nanowhisker of a first semiconducting material has a first band gap, and an enclosure comprising at least one seco... | 10/07/2008 |
| 7427771 | Universal gates for ising TQFT via time-tilted interferometry Experiments suggest that the mathematically weakest non-abelian TQFT may be physically the most robust. Such TQFT's—the v=5/2 FQHE state in particular—have discrete braid group representations, so one cannot build a universal quantum computer from these alone. T... | 09/23/2008 |
| 7411187 | Ion trap in a semiconductor chip A micrometer-scale ion trap, fabricated on a monolithic chip using semiconductor micro-electromechanical systems (MEMS) technology. A single 111Cd+ ion is confined, laser cooled, and the heating measured in an integrated radiofrequency trap etched from a doped galli... | 08/12/2008 |
| 7397062 | Heterojunction bipolar transistor with improved current gain One aspect of the present invention is directed to a heterojunction bipolar transistor (HBT) comprising: a substrate; a buffer layer of undoped semiconductor material; a sub-collector layer; a collector layer; a base layer; an emitter layer; a emitter cap layer; and... | 07/08/2008 |
| 7391046 | Light source module and vehicle front lamp A light source module for generating light, including a semiconductor light-emitting element, nano-particles having a diameter smaller than half the wavelength of light generated by the light source module, a fluorescent substance for generating visible light in acc... | 06/24/2008 |
| 7382001 | Enhancement mode III-nitride FET A III-nitride switch includes a recessed gate contact to produce a nominally off, or an enhancement mode, device. By providing a recessed gate contact, a conduction channel formed at the interface of two III-nitride materials is interrupted when the gate electrode i... | 06/03/2008 |
| 7378680 | Migration enhanced epitaxy fabrication of quantum wells Methods and systems produce flattening layers associated with nitrogen-containing quantum wells and prevent 3-D growth of nitrogen containing layers using high As fluxes. MEE (Migration Enhanced Epitaxy) is used to flatten layers and enhance smoothness of quantum we... | 05/27/2008 |
| 7368750 | Semiconductor light-receiving device A semiconductor light-receiving device includes: a semi-insulating substrate; a semiconductor layer of a first conduction type that is formed on the semi-insulating substrate; a buffer layer of the first conduction type that is formed on the semi-insulating substrat... | 05/06/2008 |
| 7361536 | Method of fabrication of a field effect transistor with materialistically different two etch stop layers in an enhanced mode transistor and an depletion mode transistor A semiconductor structure a structure with an enhancement mode transistor device disposed in a first region and depletion mode transistor device disposed in a laterally displaced second region. The structure has a channel layer for the depletion mode and enhancement... | 04/22/2008 |
| 7348260 | Method for forming a relaxed or pseudo-relaxed useful layer on a substrate A method for forming a relaxed or pseudo-relaxed useful layer on a substrate is described. The method includes growing a strained semiconductor layer on a donor substrate, bonding a receiver substrate to the strained semiconductor layer by a vitreous layer of a mate... | 03/25/2008 |
| 7348261 | Wafer scale thin film package A chip module having a chip with a flexible multilayer redistribution thin film attached thereto for connection to a substrate. The thin film acts as both a redistribution medium with multiple layers of redistribution metallurgy for chip power and signals and as a c... | 03/25/2008 |
| 7348592 | Carbon nanotube apparatus and method of carbon nanotube modification Carbon nanotube apparatus, and methods of carbon nanotube modification, include carbon nanotubes having locally modified properties with the positioning of the modifications being controlled. More specifically, the positioning of nanotubes on a substrate with a depo... | 03/25/2008 |
| 7345297 | Nitride semiconductor device A semiconductor device includes an active layer, an n-side contact layer, and a p-side contact layer. The nitride semiconductor device includes at least a first n-side layer, a second n-side layer, a third n-side layer and a fourth n-side layer formed in this order ... | 03/18/2008 |
| 7339207 | Semiconductor device including a group III-V nitride semiconductor A semiconductor device has: a buffer layer formed on a conductive substrate and made of AlxGa1−xN with a high resistance; an element-forming layer formed on the buffer layer, having a channel layer, and made of undoped GaN and N-type Aly... | 03/04/2008 |
| 7339970 | Surface light emitting element, optical module, light transmission device To provide a surface light emitting element capable of maintaining characteristics of the surface light emitting element and accurately detecting emitted light. A surface light emitting element includes a light emitting element part, provided on a semiconductor subs... | 03/04/2008 |
| 7335908 | Nanostructures and methods for manufacturing the same A resonant tunneling diode, and other one dimensional electronic, photonic structures, and electromechanical MEMS devices, are formed as a heterostructure in a nanowhisker by forming length segments of the whisker with different materials having different band gaps.... | 02/26/2008 |
| 7332443 | Method for fabricating a semiconductor device The present invention relates to a method for fabricating a semiconductor device. In order to provide for a high carrier mobility in an active region of the device, germanium atoms are implanted into a surface of a semiconductor substrate such that a germanium-conta... | 02/19/2008 |
| 7332744 | Semiconductor light-emitting device and method of manufacturing the same A semiconductor light-emitting device capable of improving device characteristics such as life and reliability is provided. A current confinement layer includes a non-oxidized region made of AlAs or the like corresponding to a current injection region in an active l... | 02/19/2008 |
| 7329905 | Chip-scale methods for packaging light emitting devices and chip-scale packaged light emitting devices A packaged light emitting device includes a carrier substrate having a top surface and a bottom surface, first and second conductive vias extending from the top surface of the substrate to the bottom surface of the substrate, and a bond pad on the top surface of the... | 02/12/2008 |
| 7326908 | Optically-regulated optical emission using colloidal quantum dot nanocrystals The present invention relates to the emission of light which occurs in proportion with an electrical signal, an optical signal, or the combination of both. The emission of light may occur due to the passage of current through a light-emitting polymer, or due to ener... | 02/05/2008 |
| 7326971 | Gallium nitride based high-electron mobility devices A heterojunction device includes a first layer of p-type aluminum gallium nitride; a second layer of undoped gallium nitride on the first layer; a third layer of aluminum gallium nitride on the second layer; and an electron gas between the second and third layers. A... | 02/05/2008 |
| 7323724 | Nitride semiconductor device A nitride semiconductor device includes a semiconductor layer, a first electrode for establishing an ohmic contact disposed on the semiconductor layer, and a second electrode on the first electrode, having a different shape from that of the first electrode. A joint ... | 01/29/2008 |
