Bizarre Patents
User-operated amusement apparatus for kicking the user's buttocks
An apparatus including a user-operated and controlled apparatus for self-infliction of repetitive blows to the user's buttocks by a plurality of elongated arms bearing flexible extensions that rotate under the user's control.
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| Number | Title | Issue Date |
| 7964892 | Light emitting device A light emitting device, comprises: a first semiconductor light emitting element; a second semiconductor light emitting element; a first metal member mounting on its top face the first semiconductor light emitting element; a second metal member mounting on its top f... | 06/21/2011 |
| 7423284 | Light emitting device, method for making the same, and nitride semiconductor substrate A light-emitting device includes a GaN substrate; a n-type AlxGa1-xN layer on a first main surface side of the GaN substrate; a p-type AlxGa1-xN layer positioned further away from the GaN substrate compared to the n-type A... | 09/09/2008 |
| 7400004 | Isolation structures for preventing photons and carriers from reaching active areas and methods of formation Regions of an integrated circuit are isolated by a structure that includes at least one isolating trench on the periphery of an active area. The trench is deep, extending at least about 0.5 μm into the substrate. The isolating structure prevents photons and electro... | 07/15/2008 |
| 7397066 | Microelectronic imagers with curved image sensors and methods for manufacturing microelectronic imagers Microelectronic imagers with curved image sensors and methods for manufacturing curved image sensors. In one embodiment, a microelectronic imager device includes an imager die having a substrate, a curved microelectronic image sensor having a face with a convex and/... | 07/08/2008 |
| 7397067 | Microdisplay packaging system Some embodiments provide a microdisplay integrated circuit (IC), a substantially transparent protective cover coupled to the microdisplay IC, and a base coupled to the microdisplay IC. Thermal expansion characteristics of the base may be substantially similar to the... | 07/08/2008 |
| 7253493 | High density access transistor having increased channel width and methods of fabricating such devices A memory device having decreased cell size and having transistors with increased channel widths. More specifically, pillars are formed in a substrate such that sidewalls are exposed. The sidewalls of the pillars and the top surface of the pillars are covered with a ... | 08/07/2007 |
| 7233027 | Arrangement comprising at least two different electronic semiconductor circuits The invention relates to an arrangement comprising at least two different electronic semiconductor circuits (HS) in which each of the semiconductor circuits (HS) is a component made of semiconductor material and which has an electrically active surface and electroni... | 06/19/2007 |
| 7214971 | Semiconductor light-receiving device A semiconductor light-receiving device has a substrate including upper, middle and lower regions in its front side. A p-type layer on the lower region has a top surface including a portion on a level with the middle region. An electrode covers at least part of the b... | 05/08/2007 |
| 7157747 | Bidirectional photothyristor chip, light-fired coupler and solid state relay A channel isolation region 42 is formed over the entire width of an N-type silicon substrate 41, and photothyristors, in each of which an anode diffusion region 43, a P-gate diffusion region 44, a cathode diffusion region 45 are fo... | 01/02/2007 |
| 7154136 | Isolation structures for preventing photons and carriers from reaching active areas and methods of formation Regions of an integrated circuit are isolated by a structure that includes at least one isolating trench on the periphery of an active area. The trench is deep, extending at least about 0.5 μm into the substrate. The isolating structure prevents photons and electro... | 12/26/2006 |
| 7151306 | Electronic part, and electronic part mounting element and an process for manufacturing such the articles A surface of an external electrode 3 of an electronic part 4 is formed with a coating containing resin ingredient. Thereby, adhesion strength and reliability may be significantly improved in mounting an electronic part onto a circuit board 1 thr... | 12/19/2006 |
| 7122840 | Image sensor with optical guard ring and fabrication method thereof An image sensor device and fabrication method thereof wherein a substrate having at least one shallow trench isolation structure therein is provided. At least one photosensor and at least one light emitting element, e.g., such as MOS or LED, are formed in the substr... | 10/17/2006 |
| 7102185 | Lightshield architecture for interline transfer image sensors An interline transfer type image sensing device that can be operated at high speed and with low image smear is described. The device incorporates a refractory metal layer which is used for both a light shield over the vertical charge transfer region and as a wiring ... | 09/05/2006 |
| 7067415 | Low k interlevel dielectric layer fabrication methods A low k interlevel dielectric layer fabrication method includes providing a substrate having integrated circuitry at least partially formed thereon. An oxide comprising interlevel dielectric layer comprising carbon and having a dielectric constant no greater than 3.... | 06/27/2006 |
| 7057214 | Light-activated semiconductor switches Semiconductor switches, such as thyristors, may be light activated by introducing the light into the switch via a groove having a sloped surface to receive the triggering light. The use of a sloped surface increases the surface path length between points of differen... | 06/06/2006 |
| 7045277 | Semiconductor processing methods of transferring patterns from patterned photoresists to materials, and structures comprising silicon nitride The invention includes a semiconductor processing method. A first material comprising silicon and nitrogen is formed. A second material is formed over the first material, and the second material comprises silicon and less nitrogen, by atom percent, than the first ma... | 05/16/2006 |
| 6982432 | Touch type liquid-crystal display device and input detecting method A touch type liquid-crystal display device has a liquid-crystal display panel having flexibility, a touch panel provided to adhere closely to a back side, opposite to a visual side, of the liquid-crystal display panel, and electrodes disposed to be opposite to each ... | 01/03/2006 |
| 6972477 | Circuit device with conductive patterns separated by insulating resin-filled grooves To make thin a circuit device 10 in which are incorporated a plurality of types of circuit elements 12 that differ in thickness, first conductive patterns, onto which comparatively thin circuit elements 12A are mounted, are formed thickly, and s... | 12/06/2005 |
| 6828606 | Substrate with embedded free space optical interconnects Substrates with embedded free space light guiding channels for optical interconnects, and methods for making such substrates are shown. The method comprising steps of a groove in a first generally planar body, and combining the first body with a second generally pla... | 12/07/2004 |
| 6809355 | Solid-state imaging device A solid-state imaging device having a gate structure including an oxide film and a nitride film includes upper layer films (for example, a planarization film, an insulating film, and a protective film) allowing ultraviolet rays having a wavelength of 400 nm or less ... | 10/26/2004 |
| 6809359 | Solid-state imaging device, method for manufacturing the same, and method for driving the same In a solid-state imaging device in which a N-type photoelectric conversion region is formed in a P−-type well region, a light-blocking film and a transparent conductive film are formed on the N-type photoelectric conversion region with a second interlay... | 10/26/2004 |
| 6724016 | Fabricating a molecular electronic device having a protective barrier layer A process of fabricating a molecular electronic device that preserves the integrity of the active molecular layer of the electronic device during processing is described. In one aspect, a barrier layer is provided to protect a molecular layer sandwiched between a bo... | 04/20/2004 |
| 6717182 | Edge-emitting light-emitting device having improved external luminous efficiency and self-scanning light-emitting device array comprising the same A self-scanning light-emitting element array using an end face light-emitting thyristor having improved external emission efficiency is provided. To improve the external emission efficiency of the end face light-emitting thyristor, the present invention adopts such ... | 04/06/2004 |
| 6686658 | Semiconductor device, including an arrangement to provide a uniform press contact and converter using same In accordance with a press contact type semiconductor device, a metallic body having macroscopic vacancies inside is arranged between a main electrode of the semiconductor device and a main electrode plate, or between an intermediate electrode plate arran... | 02/03/2004 |
| 6682998 | Methods for bumped die and wire bonded board-on-chip package Methods for making a semiconductor assembly and, specifically, interconnecting a semiconductor die to a carrier substrate. The carrier substrate includes a first surface and a second surface with at least one opening therethrough. The die includes an acti... | 01/27/2004 |
| 6614055 | Surface light-emitting element and self-scanning type light-emitting device A surface light-emitting element having improved external light emission efficiency and a self-scanning light-emitting device using this surface light-emitting element are provided. To improve external light-emission efficiency, the light-emitting center ... | 09/02/2003 |
| 6608389 | Semiconductor device with stress relieving layer comprising circuit board and electronic instrument A semiconductor device with a package size close to its chip size is, apart from a stress absorbing layer, such as to effectively absorb thermal stresses. A semiconductor device (150) has a semiconductor chip provided with electrodes (158), a resin layer ... | 08/19/2003 |
| 6550949 | Systems and components for enhancing rear vision from a vehicle A vehicle system is disclosed that includes a vehicle lamp assembly including a plurality of LEDs that emit white light so as to function as an illuminator light. The lamp assembly also may include a plurality of LEDs that emit colored light, such as red ... | 04/22/2003 |
| 6097071 | ESD protection clamp for mixed voltage I/O stages using NMOS transistors An electrostatic discharge protection device for protecting a mixed voltage integrated circuit against damage is provided which includes at least on pair of NMOS transistors connected in a cascode configuration. Each NMOS transistor pair includes a first ... | 08/01/2000 |
| 6069026 | Semiconductor device and method of fabrication This invention relates to the fabrication and assembly of semiconductor chips, substrates, and modules, and more particularly to methods and apparatus for achieving flexible, low-cost manufacturing. Commercial and military systems today are placing increa... | 05/30/2000 |
| 6034381 | Network of triacs with gates referenced with respect to a common opposite face electrode The present invention relates to a triac network wherein each triac includes an N-type semiconductor substrate, containing a first thyristor comprised of NPNP regions and a second thyristor comprised of PNPN regions, and surrounded with a P-type deep diff... | 03/07/2000 |
| 5804841 | Optical trigger thyristor and fabrication method An optical trigger thyristor having a light receiving portion 8 constructed of an n-type base layer front surface portion 5, a p-type semiconductor region 6, and a p-type front surface layer 7. The p-type front surface layer 7 is disposed so that it conne... | 09/08/1998 |
| 5793063 | High voltage, vertical-trench semiconductor device An optically-triggered silicon controlled rectifier (SCR) (21) having a number of semiconductor layers (23, 24, 31) diffused into an N type substrate (22). Specifically, the SCR is formed by diffusing a first P+ layer (23) into an upper surface of the sub... | 08/11/1998 |
| 5747835 | Serial arrangement of photothyristors A serial arrangement of photosensitive components of the planar-type has a first main surface on which a first photosensitive junction appears at the surface and a second main surface. The components are piled so that the second main surface of a componen... | 05/05/1998 |
| 5360982 | Optoelectronic semiconductor having a groove-shaped waveguide Optoelectronic semiconductor devices which have a groove-shaped waveguide in an oxide layer provided on a silicon substrate are compact, easy to manufacture, and--when the waveguide comprises a non-linear optical material--applicable inter alia for freque... | 11/01/1994 |
| 5291041 | AlGaAs/GaAs thyristor The present invention comprises a semi-insulating layer of GaAs with p+ and layers of aluminum gallium arsenide AlGaAs grown on one side of the semi-insulating GaAs and with p and n+ layers of AlGaAs grown on the other side of the semi-insulating GaAs. Oh... | 03/01/1994 |
| 5083177 | Thyristor having a low-reflection light-triggering structure A thyristor having low-reflection light-triggering structure. In a light-triggerable thyristor, pyramidal depressions are formed in a simple manner by a preferred etching method, being formed in the region of the photon entry face in order to produce a lo... | 01/21/1992 |
| 4974047 | Light triggered thyristor A light triggered thyristor having a light-receiving structure which has a light-receiving surface for receiving incident light on its top surface. The light-receiving structure comprises a base region of a first electrically conductive type exposed in th... | 11/27/1990 |
| 4812892 | Light controllable thyristors Light controllable thyristors in which the sensitivity to light of the thyristors has been increased by increasing the emitter shunt resistance for the auxiliary thyristor coupling to small area optical light guides. The shunt resistance is increased by p... | 03/14/1989 |
| 4739387 | Amplifying gate thyristor having high gate sensitivity and high dv/dt rating A thyristor is provided having high gate sensitivity in combination with high dv/dt ratings. An amplifying gate structure is utilized having a pilot thyristor region including a first portion characterized by a first extent and at least one projection of ... | 04/19/1988 |
