Class 257/117 - In groove or with thinned semiconductor portion

Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: Subject matter wherein the light sensitive portion is located
No. of patents: 39
Last issue date: 09/09/2008

Number	Title	Issue Date
7423284	Light emitting device, method for making the same, and nitride semiconductor substrate A light-emitting device includes a GaN substrate; a n-type AlxGa1-xN layer on a first main surface side of the GaN substrate; a p-type AlxGa1-xN layer positioned further away from the GaN substrate compared to the n-type A...	09/09/2008
7400004	Isolation structures for preventing photons and carriers from reaching active areas and methods of formation Regions of an integrated circuit are isolated by a structure that includes at least one isolating trench on the periphery of an active area. The trench is deep, extending at least about 0.5 μm into the substrate. The isolating structure prevents photons and electro...	07/15/2008
7397066	Microelectronic imagers with curved image sensors and methods for manufacturing microelectronic imagers Microelectronic imagers with curved image sensors and methods for manufacturing curved image sensors. In one embodiment, a microelectronic imager device includes an imager die having a substrate, a curved microelectronic image sensor having a face with a convex and/...	07/08/2008
7329942	Array-type modularized light-emitting diode structure and a method for packaging the structure An array-type modularized light-emitting diode structure and a method for packaging the structure. The array-type modularized light-emitting diode structure includes a lower substrate and an upper substrate fixed on the lower substrate. A material with high heat con...	02/12/2008
7214971	Semiconductor light-receiving device A semiconductor light-receiving device has a substrate including upper, middle and lower regions in its front side. A p-type layer on the lower region has a top surface including a portion on a level with the middle region. An electrode covers at least part of the b...	05/08/2007
7154136	Isolation structures for preventing photons and carriers from reaching active areas and methods of formation Regions of an integrated circuit are isolated by a structure that includes at least one isolating trench on the periphery of an active area. The trench is deep, extending at least about 0.5 μm into the substrate. The isolating structure prevents photons and electro...	12/26/2006
7135359	Manufacturing methods for large area silicon carbide devices Large area silicon carbide devices, such as light-activated silicon carbide thyristors, having only two terminals are provided. The silicon carbide devices are selectively connected in parallel by a connecting plate. Silicon carbide thyristors are also provided havi...	11/14/2006
7102185	Lightshield architecture for interline transfer image sensors An interline transfer type image sensing device that can be operated at high speed and with low image smear is described. The device incorporates a refractory metal layer which is used for both a light shield over the vertical charge transfer region and as a wiring ...	09/05/2006
7057214	Light-activated semiconductor switches Semiconductor switches, such as thyristors, may be light activated by introducing the light into the switch via a groove having a sloped surface to receive the triggering light. The use of a sloped surface increases the surface path length between points of differen...	06/06/2006
7002187	Integrated schottky diode using buried power buss structure and method for making same An integrated Schottky diode and method of manufacture of such a diode is disclosed. In a first aspect, a Schottky diode comprises a semiconductor substrate. The semiconductor substrate includes an epitaxial layer (EPI) on the substrate region. The diode includes a ...	02/21/2006
6982432	Touch type liquid-crystal display device and input detecting method A touch type liquid-crystal display device has a liquid-crystal display panel having flexibility, a touch panel provided to adhere closely to a back side, opposite to a visual side, of the liquid-crystal display panel, and electrodes disposed to be opposite to each ...	01/03/2006
6972477	Circuit device with conductive patterns separated by insulating resin-filled grooves To make thin a circuit device 10 in which are incorporated a plurality of types of circuit elements 12 that differ in thickness, first conductive patterns, onto which comparatively thin circuit elements 12A are mounted, are formed thickly, and s...	12/06/2005
6965130	Alternating implant ring terminations A semiconductor device including a semiconductive body having formed therein an active region and a termination feature which includes spaced field rings disposed around the active region and diffusion rings of the same conductivity type as, but different conductivi...	11/15/2005
6913955	Method of manufacturing a thyristor device with a control port in a trench A thyristor-based semiconductor device has a control port formed in a trench having a height-to-width aspect ratio that can be prohibitive to filling a bottom portion of the trench with an insulative material. According to an example embodiment of the present invent...	07/05/2005
6876034	Semiconductor device having active grooves A semiconductor device having grooves uniformly filled with semiconductor fillers is provided. Both ends of each of narrow active grooves are connected to an inner circumferential groove surrounding the active grooves. The growth speed of semiconductor fillers on bo...	04/05/2005
6828606	Substrate with embedded free space optical interconnects Substrates with embedded free space light guiding channels for optical interconnects, and methods for making such substrates are shown. The method comprising steps of a groove in a first generally planar body, and combining the first body with a second generally pla...	12/07/2004
6809355	Solid-state imaging device A solid-state imaging device having a gate structure including an oxide film and a nitride film includes upper layer films (for example, a planarization film, an insulating film, and a protective film) allowing ultraviolet rays having a wavelength of 400 nm or less ...	10/26/2004
6712478	Light emitting diode A light emitting diode with strained layer superlatices (SLS) crystal structure is formed on a substrate. A nucleation layer and a buffer layer are sequentially formed on the substrate, so as to ease the crystal growth for the subsequent crystal growing process. An ...	03/30/2004
6707075	Method for fabricating avalanche trench photodetectors A method of forming an avalanche trench optical detector device on a semiconductor substrate, comprising forming a first set and a second set of trenches in the substrate, wherein trenches of the first set are alternately disposed with respect to trenches of the sec...	03/16/2004
6614055	Surface light-emitting element and self-scanning type light-emitting device A surface light-emitting element having improved external light emission efficiency and a self-scanning light-emitting device using this surface light-emitting element are provided. To improve external light-emission efficiency, the light-emitting center ...	09/02/2003
6603141	Organic semiconductor and method A semiconductor device formed of a flexible or rigid substrate (10) having a gate electrode (11), a source electrode (12), and a drain electrode (13) formed thereon and organic semiconductor material (14) disposed at least partially thereover. With approp...	08/05/2003
6097071	ESD protection clamp for mixed voltage I/O stages using NMOS transistors An electrostatic discharge protection device for protecting a mixed voltage integrated circuit against damage is provided which includes at least on pair of NMOS transistors connected in a cascode configuration. Each NMOS transistor pair includes a first ...	08/01/2000
5804841	Optical trigger thyristor and fabrication method An optical trigger thyristor having a light receiving portion 8 constructed of an n-type base layer front surface portion 5, a p-type semiconductor region 6, and a p-type front surface layer 7. The p-type front surface layer 7 is disposed so that it conne...	09/08/1998
5793063	High voltage, vertical-trench semiconductor device An optically-triggered silicon controlled rectifier (SCR) (21) having a number of semiconductor layers (23, 24, 31) diffused into an N type substrate (22). Specifically, the SCR is formed by diffusing a first P+ layer (23) into an upper surface of the sub...	08/11/1998
5747835	Serial arrangement of photothyristors A serial arrangement of photosensitive components of the planar-type has a first main surface on which a first photosensitive junction appears at the surface and a second main surface. The components are piled so that the second main surface of a componen...	05/05/1998
5596210	Light trigger type semiconductor device with reflection prevention film An object of the present invention is to enhance the transmission efficiency of light signals. An output end of a light guide is coupled to a light receiving portion of a semiconductor substrate with an optical coupling agent. Reflection preventing films ...	01/21/1997
5424573	Semiconductor package having optical interconnection access A semiconductor package includes a semiconductor chip, an interconnection substrate having the semiconductor chip mounted on one surface of the interconnection substrate, and a package base having the interconnection substrate mounted on one surface of th...	06/13/1995
5360982	Optoelectronic semiconductor having a groove-shaped waveguide Optoelectronic semiconductor devices which have a groove-shaped waveguide in an oxide layer provided on a silicon substrate are compact, easy to manufacture, and--when the waveguide comprises a non-linear optical material--applicable inter alia for freque...	11/01/1994
5017991	Light quenchable thyristor device A thyristor device comprising an SI (Static induction) thyristor or beam base thyristor and an SIT (static induction transistor) or SIT-mode bipolar transistor connected to the gate of the thyristor in order to make it possible to turn-on and-off a direct...	05/21/1991
4755861	Light-firable thyristor A light-firable thyristor has two emitter layers and two base layers therebetween. One of the emitter layers comprises a plurality of partial layers one of which has a light-active semiconductor region. Each of the emitter layers has an additional region ...	07/05/1988
4677454	Thyristor with self-centering housing means An alignment of a light guide (10) and a photosensitive portion (1a) of an element (1) in a light-triggered thyristor is adapted such that, in order to eliminate a deviation or offset between the light guide and the photosensitive portion, an inner periph...	06/30/1987
4388633	Monolithic transistor coupled electroluminescent diode Modulated signal levels in the range of 1 μV, as is typical for radar returns, can be used to achieve a useful modulated optical signal that can be launched into a fiber optic waveguide for transmission to a remote location for signal processing. The dev...	06/14/1983
4301462	Light activated silicon switch with etched channel in cathode base and anode emitter communicating with cladded optical fiber A light activated silicon switch (LASS) is disclosed in which light is transmitted from a light trigger source to target areas prepared in the cathode-base and anode-emitter regions of the silicon wafer. These target areas are V-shaped channels etched in ...	11/17/1981
4216487	Bidirectional light-activated thyristor having substrate optical isolation Disclosed is a bidirectional light-activated thyristor which comprises a first and a second thyristor portion arranged in inverse-parallel with each other with a predetermined positional relation, an isolation section for electrically isolating the first ...	08/05/1980
4186409	Light activated silicon switch A light activated silicon switch (LASS) is disclosed in which light is transmitted from a light trigger source to appropriate target areas on the body of the silicon wafer. The optical conduits for transmitting the light, such as optical fibers, are under...	01/29/1980
4167746	Radiation triggered thyristor with light focussing guide A monolithic semiconductor switch for triggering from a light source or from an electrical signal is provided which includes a light sensitive gate region, and one or more amplifying gate thyristor regions adapted to be connected to an electrical triggeri...	09/11/1979
4152713	Unidirectional optical device and regenerator A light-activated light-emitting device has at least one p-n junction provided with electrodes for confining light-emission to an area of the junction. It has been determined that light-emission can be activated by light impinging on the junction outside ...	05/01/1979
4110781	Bidirectional grooved thyristor fired by activation of the beveled surfaces A bidirectional light-activated thyristor is provided which has a first and a second thyristor portion arranged in inverse-parallel with each other with a predetermined positional relation. The first and second thyristor portions are electrically isolated...	08/29/1978
3938173	Optically coupled semiconductive switching devices This relates to an optically isolated switching device made by coupling the output of a light emitting diode into a thyristor. Sensitivity is determined by optical flux density rather than total flux. Improved sensitivity is obtained with a mesa construct...	02/10/1976

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Class 257/117 - In groove or with thinned semiconductor portion