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| Number | Title | Issue Date |
| 7696529 | Array substrate for use in a transflective liquid crystal display device and a method of fabricating the same The present invention provides a transflective liquid crystal display device having at least one switching element having at least a drain electrode, a first passivation layer formed over the switching element with the first passivation layer defining a drain contac... | 04/13/2010 |
| 7397066 | Microelectronic imagers with curved image sensors and methods for manufacturing microelectronic imagers Microelectronic imagers with curved image sensors and methods for manufacturing curved image sensors. In one embodiment, a microelectronic imager device includes an imager die having a substrate, a curved microelectronic image sensor having a face with a convex and/... | 07/08/2008 |
| 7232708 | Multi-mode integrated circuit structure A multi-mode integrated circuit structure. In one embodiment, an integrated circuit structure includes a first die having at least one first component disposed on a face, the first die fabricated using a first process that is optimal for operating the component in a... | 06/19/2007 |
| 7214971 | Semiconductor light-receiving device A semiconductor light-receiving device has a substrate including upper, middle and lower regions in its front side. A p-type layer on the lower region has a top surface including a portion on a level with the middle region. An electrode covers at least part of the b... | 05/08/2007 |
| 7157747 | Bidirectional photothyristor chip, light-fired coupler and solid state relay A channel isolation region 42 is formed over the entire width of an N-type silicon substrate 41, and photothyristors, in each of which an anode diffusion region 43, a P-gate diffusion region 44, a cathode diffusion region 45 are fo... | 01/02/2007 |
| 7122840 | Image sensor with optical guard ring and fabrication method thereof An image sensor device and fabrication method thereof wherein a substrate having at least one shallow trench isolation structure therein is provided. At least one photosensor and at least one light emitting element, e.g., such as MOS or LED, are formed in the substr... | 10/17/2006 |
| 7102185 | Lightshield architecture for interline transfer image sensors An interline transfer type image sensing device that can be operated at high speed and with low image smear is described. The device incorporates a refractory metal layer which is used for both a light shield over the vertical charge transfer region and as a wiring ... | 09/05/2006 |
| 7075593 | Electron-beam-addressed active-matrix spatial light modulator A spatial light modulator contains a substrate (90), a plurality of overlying liquid-crystal cells (202), a plurality of respectively corresponding transistors (204), an electron-beam system (400 and 500), and a control component (... | 07/11/2006 |
| 7057214 | Light-activated semiconductor switches Semiconductor switches, such as thyristors, may be light activated by introducing the light into the switch via a groove having a sloped surface to receive the triggering light. The use of a sloped surface increases the surface path length between points of differen... | 06/06/2006 |
| 7033873 | Methods of controlling gate electrode doping, and systems for accomplishing same The present invention is generally directed to various methods of controlling gate electrode doping, and various systems for accomplishing same. In one illustrative embodiment, the method disclosed herein comprises performing at least one process operation to form a... | 04/25/2006 |
| 6933489 | Back illuminated photodiode array and method of manufacturing the same Disclosed are a back illuminated photodiode array, which is mass-producible and has an ultra-thin high-performance single-sided electrode structure, and a method of manufacturing the same. Both electrodes of a photodiode on a semiconductor substrate 1, which ... | 08/23/2005 |
| 6809355 | Solid-state imaging device A solid-state imaging device having a gate structure including an oxide film and a nitride film includes upper layer films (for example, a planarization film, an insulating film, and a protective film) allowing ultraviolet rays having a wavelength of 400 nm or less ... | 10/26/2004 |
| 6800877 | Semi-conductor interconnect using free space electron switch An apparatus and method for electrically connecting semi-conductor devices is disclosed. The apparatus and method employs a vacuum chamber and first and second semi-conductor components. The first and second semi-conductor components are coupled to a vacuum chamber ... | 10/05/2004 |
| 6770911 | Large area silicon carbide devices Large area silicon carbide devices, such as light-activated silicon carbide thyristors, having only two terminals are provided. The silicon carbide devices are selectively connected in parallel by a connecting plate. Silicon carbide thyristors are also provided havi... | 08/03/2004 |
| 6765290 | Arrangement for back-biasing multiple integrated circuit substrates at maximum supply voltage among all circuits A diode coupling-based arrangement back-biases each of the semiconductor substrates of a plurality of integrated circuits at the maximum (e.g., most negative) DC voltage applied to any individual circuit, irrespective of a potential variation in applied DC voltages.... | 07/20/2004 |
| 6548352 | Multi-layered gate for a CMOS imager A multi-layered gate for use in a CMOS or CCD imager formed with a second gate at least partially overlapping it. The multi-layered gate is a complete gate stack having an insulating layer, a conductive layer, an optional silicide layer, and a second insu... | 04/15/2003 |
| 6144045 | High power devices based on gallium nitride and aluminum gallium nitride semiconductor heterostructures High power thyristor-type devices comprising a first layer of p-type doped semiconductor alloy aluminum gallium nitride, a second layer of n-type doped aluminum gallium nitride with lower aluminum content than the first layer, a third layer of p-type dope... | 11/07/2000 |
| 5929474 | Active matrix OED array An active matrix OED array includes an array area defined on a semiconductor substrate defining rows and columns of pixels and driver areas spaced from the array area with driver circuits including row drivers coupled to row buses and column drivers coupl... | 07/27/1999 |
| 5780877 | Break-over photodiode A break-over photodiode, designed as a light-sensitive thyristor, can be stacked using a series connection with a plurality of break-over photodiodes, such stacking representing a high-voltage break-over diode. The break-over photodiode can be triggered b... | 07/14/1998 |
| 5677552 | Optical control circuit for an optical pnpn thyristor The invention provides an optical functioning device which emits and receives light, and a driver circuit for controlling the device with light. In the device, elements, in which semiconductor multilayer-film reflecting mirrors are provided at both the up... | 10/14/1997 |
| 5663580 | Optically triggered semiconductor device A semiconductor device comprises a semiconductor layer of SiC having an active area through which the device is adapted to be triggered by light incident thereon and means for generating and emitting light with an energy exceeding the bandgap, being the e... | 09/02/1997 |
| 5406096 | Device and method for high performance high voltage operation A high voltage device (10) having MOS input characteristics. A low voltage MOS transistor (12) is provided which has a source (18), a drain (22), and a gate (25). A high voltage transistor (14) is also provided which has a source (20), a drain (24), and g... | 04/11/1995 |
| 5345094 | Light triggered triac device and method of driving the same Disclosed is a semiconductor device comprising an output Triode AC switch with a vertical structure, which is provided in a silicon substrate and has a gate, a first output terminal and a second output terminal, and an input/driving photo Triode AC switch... | 09/06/1994 |
| 5245203 | Photoelectric converter with plural regions A photoelectric converter of semiconductor transistor comprises two semiconductor regions of same electroconductive type and a semiconductor region of opposite electroconductive type to that of the two semiconductor regions. The semiconductor region of op... | 09/14/1993 |
| 5017991 | Light quenchable thyristor device A thyristor device comprising an SI (Static induction) thyristor or beam base thyristor and an SIT (static induction transistor) or SIT-mode bipolar transistor connected to the gate of the thyristor in order to make it possible to turn-on and-off a direct... | 05/21/1991 |
| 4982259 | Sensitive thyristor having improved noise-capability A MOSFET is provided between a main thyristor and an auxiliary thyristor for controlling the main thyristor. The source and drain regions of the MOSFET are also used as a first N-type emitter region of the main thyristor and a second N-type emitter region... | 01/01/1991 |
| 4975755 | Optically controllable static induction thyristor device A semiconductor device comprises a static induction thyristor and a photosensitive element connected to a gate of the static induction thyristor so that the static induction thyristor is controlled optically. A plurality of the semiconductor devices are e... | 12/04/1990 |
| 4866500 | Integrated light-triggered and light-quenched static induction thyristor and making method thereof An integrated light-triggered and light-quenched static induction thyristor and fabrication process thereof adapted in such a manner that an integrated SIPT operates in the normal mode in order to enhance current gain, tail current generated at the light-... | 09/12/1989 |
| 4816891 | Optically controllable static induction thyristor device A semiconductor device comprises a static induction thyristor and a photosensitive element connected to a gate of the static induction thyristor so that the static induction thyristor is controlled optically. A plurality of the semiconductor devices are e... | 03/28/1989 |
| 4757367 | Light triggered semiconductor device with detachable auxiliary thyrister There is provided a light triggered thyristor device comprising a main thyristor triggered by an electric triggering signal, an auxiliary thyristor triggered by a light signal applied to a light receiving portion, the auxiliary thyristor then supplying th... | 07/12/1988 |
| 4719551 | Optically controlled power converting apparatus The present invention provides an optically controlled power converting apparatus using light trigger/light quench electrostatic induction thyristors, as switching elements, which can execute the switching operations at a high speed being when they are su... | 01/12/1988 |
| 4633288 | Light-triggerable thyristor having low light power requirement and high critical voltage rise rate A thyristor comprises a semiconductor body containing a n emitter contacted by a cathode electrode and an adjacent p base, with a p emitter contacted by an anode electrode and an adjacent n base. The thyristor comprises a projection of the p base which ex... | 12/30/1986 |
| 4604638 | Five layer semiconductor device with separate insulated turn-on and turn-off gates A semiconductor device has first and second layers of n-type conductivity, a third layer of p-type conductivity which is formed between the first and second layers, a fourth layer of p-type conductivity which is in contact with the second layer, and a gat... | 08/05/1986 |
| 4587546 | Light-triggerable thyristor having a low light power requirement A light-triggerable thyristor has a semiconductor body which contains an n emitter contacted by a cathode electrode and lying adjacent a p base which, in turn, is adjacent an n base contacting a p emitter having an anode electrode. A projection of the p b... | 05/06/1986 |
| 4574310 | One-dimensional semiconductor imaging device A one-dimensional semiconductor imaging device in which each pixel in a linear array of devices is composed of but one transistor. The single transistor is an SIT (Static Induction Transistor) including a pair of principal electrode regions of one conduct... | 03/04/1986 |
| 4489340 | PNPN Light sensitive semiconductor switch with phototransistor connected across inner base regions A PNPN semiconductor switch including an N type semiconductor substrate, spaced apart first and second P type diffused regions formed on a surface of an N type substrate, spaced apart first and second N type diffused regions formed in the second P type di... | 12/18/1984 |
| 4441115 | Thyristor having a center pn junction formed by plastic deformation of the crystal lattice A thyristor comprises two semiconductor plates, discs or chips, one n-doped and one p-doped, each having a structure of parallel ridges on one major surface and an opposite conducting type layer on the other major surface, two plates, discs or chips being... | 04/03/1984 |
