Class 257/112 - With highly-doped breakdown diode trigger

Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: Subject matter wherein the two terminal device with no control
No. of patents: 37
Last issue date: 02/05/2008

Number	Title	Issue Date
7327541	Operation of dual-directional electrostatic discharge protection device A two-terminal ESD protection structure formed by an arrangement of five adjacent semiconductor regions (112, 114, 116, 118, and 120) of alternating conductivity type provides protection against both positive and negative ESD voltages. The middle semic...	02/05/2008
7326965	Surface-emitting type device and its manufacturing method A surface-emitting type device includes a substrate including a first face, a second face that is tilted with respect to the first face and has a plane index different from a plane index of the first face, and a third face that is tilted with respect to the second f...	02/05/2008
7321138	Planar diac The invention concerns an asymmetric diac comprising a highly-doped substrate (21) of a first type of conductivity, a lightly-doped epitaxial layer (22) of the second type of conductivity on the upper surface of the substrate (21), a highly-dope...	01/22/2008
7301224	Surface acoustic wave device and manufacturing method of the same A surface acoustic wave device has a SAW device element 10 and a package 20 housing the SAW device element. The package includes a resin substrate 20 having metal patterns 21 and 22 formed on both surfaces thereof, and a resin cap ...	11/27/2007
7217980	CMOS silicon-control-rectifier (SCR) structure for electrostatic discharge (ESD) protection An electrostatic discharge protection device, including a silicon-control-rectifier, in complementary metal-oxide semiconductor (CMOS) process is disclosed. in one embodiment of the present invention, the protection device includes a semiconductor substrate having a...	05/15/2007
7193251	ESD protection cluster and method of providing multi-port ESD protection In multiple port chip circuit, an ESD protection circuit and method of protecting the ports of the multiple port circuit, includes providing a plurality of bi-directional snapback devices such as DIACs and connecting only one electrode to ground while connecting the...	03/20/2007
7190006	Symmetrical planar diac The invention concerns at disc comprising a highly-doped substrate (20) of a first type of conductivity, a lightly-doped epitaxial layer (22) of the second type of conductivity including in the neighbourhood of the substrate (20) a more highly-d...	03/13/2007
7112865	Diode and method for manufacturing the same A diode is provided which includes a first-conductivity-type cathode layer, a first-conductivity-type drift layer placed on the cathode region and having a lower concentration than the cathode layer, a generally ring-like second-conductivity-type ring region formed ...	09/26/2006
7037814	Single mask control of doping levels In an integrated circuit, dopant concentration levels are adjusted by making use of a perforated mask. Doping levels for different regions across an integrated circuit can be differently defined by making use of varying size and spacings to the perforations in the m...	05/02/2006
6982432	Touch type liquid-crystal display device and input detecting method A touch type liquid-crystal display device has a liquid-crystal display panel having flexibility, a touch panel provided to adhere closely to a back side, opposite to a visual side, of the liquid-crystal display panel, and electrodes disposed to be opposite to each ...	01/03/2006
6956248	Semiconductor device for low voltage protection with low capacitance A semiconductor thyristor device that incorporates buried region breakdown junctions laterally offset from an emitter region. By spacing the buried regions around the emitter region, current carriers emitted from the buried regions are distributed over a large area ...	10/18/2005
6956249	Termination of semiconductor components The invention relates to a semiconductor component which is capable of blocking such as an (IGBT), a thyristor, a GTO or diodes, especially schottky diodes. An insulator profile section (10a, 10b, 10c, 10d, ...	10/18/2005
6797992	Apparatus and method for fabricating a high reverse voltage semiconductor device The present invention provides a high voltage semiconductor device capable of withstanding excessive breakdown and clamping voltages. The device includes a high resistivity substrate, and an epitaxially grown, low resistivity layer having a stress-relieving dopant. ...	09/28/2004
6777721	SCR device for ESD protection The present invention provides a novel ESD structure for protecting an integrated circuit (IC) from ESD damage and a method of fabricating the ESD structure on a semiconductor substrate. The ESD structure of the present invention has lower trigger voltage and lower ...	08/17/2004
6683334	Compound semiconductor protection device for low voltage and high speed data lines The invention relates to the protection of devices in a monolithic chip fabricated from an epitaxial wafer, such as a wafer for a Group III-V compound semiconductor or a wafer for a Group IV compound semiconductor. Devices fabricated from Group III-V comp...	01/27/2004
6559481	Semiconductor device for precise measurement of a forward voltage effect A semiconductor device such as an IGBT, for realizing measurement precision for forward voltage effect characteristics using a relatively small current. It includes a second conductivity type of first anode region formed to partially constitute the upper ...	05/06/2003
6538266	Protection device with a silicon-controlled rectifier A semiconductor device for lowering a triggering voltage includes a semiconductor substrate with a first conductivity; a semiconductor region formed in the substrate having a second conductivity; a first region formed in the substrate, having the first co...	03/25/2003
6258634	Method for manufacturing a dual-direction over-voltage and over-current IC protection device and its cell structure A two terminal ESD protection structure formed by an alternating arrangement of adjacent p-n-p-n-p semiconductor regions provides protection against both positive and negative ESD pulses. When an ESD pulse appears across the two terminals of the ESD prote...	07/10/2001
6180964	Low leakage wire bond pad structure for integrated circuits An improved bond pad structure for semiconductor devices provides improved electrical isolation between adjacent bond pads by incorporating a pair of pn junctions between the pad and substrate. The pn junctions are defined by a first well of either P of N...	01/30/2001
6084253	Low voltage four-layer device with offset buried region A four-layer low voltage thyristor device (30) in which the breakover voltage is independent of the holding current. Rather than forming a buried region (38) underlying the emitter region (42), the buried region 38 is formed laterally to the side of the e...	07/04/2000
5861639	Breakover-triggered dipole component having a controlled sensitivity A dipole component with a controlled breakover sensitivity includes a main thyristor having its gate connected to its anode through a pilot thyristor, and a triggering transistor disposed in parallel with the pilot thyristor, the base of the triggering tr...	01/19/1999
5856214	Method of fabricating a low voltage zener-triggered SCR for ESD protection in integrated circuits The method in accordance with the present invention is compatible with conventional CMOS fabrication processes to form a zener diode and a lateral silicon controlled rectifier constituting an on-chip ESD protection circuit in a semiconductor substrate. Th...	01/05/1999
5602404	Low voltage triggering silicon controlled rectifier structures for ESD protection Silicon controlled rectifier (SCR) structures are provided that are triggered by lightly doped diffusion (LDD) junction breakdown voltages of approximately 4-10 V. The SCR structures eliminate the need for the field plate diode and resistor secondary prot...	02/11/1997
5500377	Method of making surge suppressor switching device A semiconductor device is fabricated which has reduced power dissipation when the device is turned on and runs cooler in surge suppressor applications. This result is achieved by fabricating a device where the breakdown action takes place preferentially u...	03/19/1996
5483086	Four layer semiconductor surge protector having plural short-circuited junctions A thyristor type surge protector having a breakdown voltage VBO approximately equal to a surge clamping voltage VCL includes a P-type first semiconductor layer, an N-type second semiconductor layer provided in one surface of the firs...	01/09/1996
5479031	Four layer overvoltage protection device having buried regions aligned with shorting dots to increase the accuracy of overshoot voltage value An overvoltage protection device having multiple shorting dots in the emitter region and multiple buried regions substantially aligned with these shorting dots. The placement, number, and area of these buried regions reduce and more accurately set the ove...	12/26/1995
5475243	Semiconductor device including an IGBT and a current-regenerative diode An insulated-gate bipolar transistor (IGBT) is connected in reverse-parallel with a current-regenerative diode which, for economy of manufacture, is integrated with the IGBT. Such a diode may extend laterally on an IGBT chip, with two conductivity regions...	12/12/1995
5401985	Low voltage monolithic protection diode with a low capacitance A monolithic protection component is formed in a P-type low-doped semiconductor substrate. The protection diode comprises, in an upper surface of the substrate, a first and a second N-type well with a mean doping level; at the surface of the first well, a...	03/28/1995
5352905	Semiconductor surge suppressor A thyristor type surge suppressor includes a P-type semiconductor substrate, an N-type first semiconductor layer provided in one surface of the semiconductor substrate, an N-type second semiconductor layer provided in the other surface of the semiconducto...	10/04/1994
5311042	Low voltage monolithic protection diode with a low capacitance A monolithic protection component is formed in a P-type low-doped semiconductor substrate. The protection diode comprises, in an upper surface of the substrate, a first and a second N-type well with a mean doping level; at the surface of the first well, a...	05/10/1994
5225702	Silicon controlled rectifier structure for electrostatic discharge protection A first silicon controlled rectifier structure (220) is provided for electrostatic discharge protection, comprising a lightly doped semiconductor layer (222) having a first conductivity type and a face. A lightly doped region (224) having a second conduct...	07/06/1993
4967256	Overvoltage protector An overvoltage protector consists of a 4-layer diode having a buried region located adjacent to the central junction of the diode and of greater impurity concentration than the layer of the same conductivity type adjacent to it, so that the current throug...	10/30/1990
4631561	Semiconductor overvoltage suppressor with accurately determined striking potential A semiconductor suppressor device consists of a structure including a P-type substrate, an N-type epitaxial layer, a first P-type diffusion region in the epitaxial layer, and a second N-type diffusion region in the first region. A first metallic layer whi...	12/23/1986
4437107	Self-igniting thyristor with a plurality of discrete, field controlled zener diodes A self-igniting thyristor has a zener diode integral with the thyristor, which zener diode bridges the central junction of the thyristor and the breakdown voltage of which determines the breakover voltage of the thyristor. The breakdown voltage of the zen...	03/13/1984
4262295	Semiconductor device A semiconductor device for use as a surge arrester of NPN (or PNP) construction, in which two NPN (or PNP) elements having different avalanche breakdown voltages are so formed that at least the intermediate layers among three layers constituting such sect...	04/14/1981
4176371	Thyristor fired by overvoltage A thyristor having an auxiliary cathode emitter region disposed in the central portion of the device in PN junction relationship with a cathode base region is disclosed. An extra impurity region of the same conductivity type as the cathode base region is ...	11/27/1979
4109274	Semiconductor switching device with breakdown diode formed in the bottom of a recess A semiconductor switching device according to the invention has a semiconductor crystal comprising sequentially alternate layers of opposite conductivity type. The device comprises two emitters of different conductivity type, at least one gate base, anoth...	08/22/1978

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Class 257/112 - With highly-doped breakdown diode trigger