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| Number | Title | Issue Date |
| 7880194 | Cross point switch using phase change material A cross-point switch and cross-point switch fabric utilizing phase change material, and method of operating the same. The cross-point switch includes a phase change cross-point circuit containing a plurality of terminal nodes connected to a central node. The connect... | 02/01/2011 |
| 7875903 | Magnetic memory device A magnetic memory device includes a magnetoresistive element and a first wiring layer. The magnetoresistive element includes a fixed layer, a recording layer, and a non-magnetic layer interposed therebetween. The first wiring layer extends in a first direction and g... | 01/25/2011 |
| 7511315 | Semiconductor device and manufacturing method therefor A semiconductor device has an external wiring for GND formed over an underside surface of a wiring substrate. A plurality of via holes connecting to the external wiring for GND are formed to penetrate the wiring substrate. A first semiconductor chip of high power co... | 03/31/2009 |
| 7411262 | Self-aligned, low-resistance, efficient memory array The present invention seeks to reduce the amount of current required for a write operation by using a process for forming the read conductor within a recessed write conductor, the write conductor itself formed within a trench of an insulating layer. The present inve... | 08/12/2008 |
| 7402529 | Method of applying cladding material on conductive lines of MRAM devices A method of fabricating a cladding region for use in MRAM devices includes the formation of a conductive bit line proximate to a magnetoresistive memory device. The conductive bit line is immersed in a first bath containing dissolved ions of a first conductive mater... | 07/22/2008 |
| 7397111 | Semiconductor wafer, an electronic component, and a component carrier for producing the electronic component An electronic component includes a semiconductor chip with a chip topside, an integrated circuit, and a chip backside. The chip backside includes a magnetic layer. The electronic component further includes a chip carrier with a magnetic layer on its carrier topside.... | 07/08/2008 |
| 7339245 | Hall sensor A Hall sensor on a semiconductor substrate includes a Hall plate in the semiconductor substrate, where the Hall plate includes a first zone having a first conduction type. The semiconductor substrate also include a second zone having a second conduction type. A spac... | 03/04/2008 |
| 7326974 | Sensor for measuring a gas concentration or ion concentration A field-effect transistor used as a sensor for measuring a gas or ion concentration utilizes a surface structure such as rings along with surface profiling, for example elevations of the rings and depressions therebetween, to decrease the surface conductivity betwee... | 02/05/2008 |
| 7301177 | Method for directing an optical beam and a method for manufacturing an apparatus for directing an optical beam Methods for directing an optical beam and for making an apparatus for directing an optical beam are described. One such method may include applying a first force to a plate to move the plate from a first angular orientation to a second angular orientation wherein th... | 11/27/2007 |
| 7293464 | Insulated IC pressure sensor An insulated IC pressure sensor comprises a main body, enclosing a chamber, having a hole for letting in fluid pressure of which is to be sensed, a pressure-sensing integrated circuit (IC), placed inside the chamber, and a membrane, placed inside the chamber between... | 11/13/2007 |
| 7256429 | Memory cell with buffered-layer A method is provided for forming a buffered-layer memory cell. The method comprises: forming a bottom electrode; forming a colossal magnetoresistance (CMR) memory film overlying the bottom electrode; forming a memory-stable semiconductor buffer layer, typically a me... | 08/14/2007 |
| 7208808 | Magnetic random access memory with lower switching field A magnetic random access memory with lower switching field is provided. The memory includes a first antiferromagnetic layer, a pinned layer formed on the first antiferromagnetic layer, a tunnel barrier layer formed on the pinned layer, a ferromagnetic free layer for... | 04/24/2007 |
| 7173339 | Semiconductor device having a substrate an undoped silicon oxide structure and an overlaying doped silicon oxide structure with a sidewall terminating at the undoped silicon oxide structure An etchant including C2HxFy, where x is an integer from two to five, inclusive, where y is an integer from one to four, inclusive, and where x plus y equals six, etches doped silicon dioxide with selectivity over both undoped silicon... | 02/06/2007 |
| 7164077 | Thin-film thermoelectric cooling and heating devices for DNA genomic and proteomic chips, thermo-optical switching circuits, and IR tags A thermoelectric cooling and heating device including a substrate, a plurality of thermoelectric elements arranged on one side of the substrate and configured to perform at least one of selective heating and cooling such that each thermoelectric element includes a t... | 01/16/2007 |
| 7152479 | Pressure transmitter having a pressure sensor of micromechanical design A pressure transmitter has a housing (11) on which a pressure sensor (12) is fastened. There is provided in the housing a region, produced micromechanically, with reduced wall thickness that forms a separating diaphragm (22) such that the fluid ... | 12/26/2006 |
| 7129534 | Magneto-resistive memory and method of manufacturing the same A method of forming a magneto-resistive memory element includes forming a groove in a layer of insulating material. A liner is formed conformably within the groove and the groove is filled with copper and then planarized. The electrically conductive material is prov... | 10/31/2006 |
| 7114402 | Sensor element device for a capacitive contact switch with an electrically conductive body and method for the manufacture of such a body According to an embodiment of the invention, a sensor element device for a capacitive contact switch can be formed from a foam body with several portions. There are electrically conductive areas with a sensor element surface and an electrical contact face, as well a... | 10/03/2006 |
| 7115460 | Standard cell back bias architecture An apparatus including, in one embodiment, a CMOS device cell including at least first and second CMOS transistors having first and second CMOS transistor doped regions in first and second doped wells, respectively, wherein each of the first and second CMOS transist... | 10/03/2006 |
| 7105902 | Optical device having movable portion and method for manufacturing the same An optical device includes a semiconductor substrate having an opening, a support member disposed on the substrate, and a movable portion disposed on the opening of the substrate. The movable portion is supported by the support member so that the movable portion is ... | 09/12/2006 |
| 7088153 | Data storage latch structure with micro-electromechanical switch Micro-electromechanical switches (MEMS) are configured to form a data storage latch to reduce power consumption, to reduce the space used in an integrated circuit, and to improve performance of the integrated circuit. MEMS are implemented at the wiring layer connect... | 08/08/2006 |
| 7057248 | Semiconductor component, particularly a micromechanical pressure sensor A semiconductor component, in particular a micromechanical pressure sensor based on silicon, having a base layer, an at least largely self-supporting diaphragm and an overlayer situated on the diaphragm, the diaphragm and the base layer, at least from place to place... | 06/06/2006 |
| 7042025 | Method and structure for contacting an overlying electrode for a magnetoelectronics element A method for contacting an electrically conductive electrode overlying a first dielectric material of a structure is provided. The method includes forming a mask layer overlying the electrically conductive electrode and patterning the mask layer to form an exposed e... | 05/09/2006 |
| 7005591 | Thermostatic cord The present invention relates to an electrical thermostatic cord assembly and a method of manufacturing the same. The cord assembly includes an electrical subassembly, a protective cap, and a one-piece body. The electrical subassembly includes a thermally sensitive ... | 02/28/2006 |
| 6965130 | Alternating implant ring terminations A semiconductor device including a semiconductive body having formed therein an active region and a termination feature which includes spaced field rings disposed around the active region and diffusion rings of the same conductivity type as, but different conductivi... | 11/15/2005 |
| 6961226 | Method and system for providing power to circuit breakers A method and system to improve efficiency and performance of a power supply by providing a consistent voltage level into a multiple-pole circuit breaker (10) to improve efficiency, reduce heat generation and increase the speed and consistency of “turn-on”... | 11/01/2005 |
| 6941815 | Sensor with built-in circuits and pressure detector using the same A sensor with built-in circuits can be improved in the stability of the operation or characteristics. A circuit region and a sensor region are covered by a passivation film. The sensor region is partially covered by the passivation film. The sensor region and circui... | 09/13/2005 |
| 6943391 | Modification of carrier mobility in a semiconductor device Tensile or compressive stress may be added in one or more selected locations to the biaxial residual stress existing in the channel of a semiconductor device, such as a MOSFET. The periphery of the active area containing the channel is modified by following layout p... | 09/13/2005 |
| 6924539 | Magnetic memory cell having an annular data layer and a soft reference layer An exemplary nonvolatile memory array comprises a substrate and a plurality of memory cells formed on the substrate, each of the memory cells being addressable via at least first and second conductors during operations. An exemplary memory cell in the exemplary memo... | 08/02/2005 |
| 6921953 | Self-aligned, low-resistance, efficient MRAM read/write conductors The present invention seeks to reduce the amount of current required for a write operation by using a process for forming the read conductor within a recessed write conductor, the write conductor itself formed within a trench of an insulating layer. The present inve... | 07/26/2005 |
| 6903429 | Magnetic sensor integrated with CMOS A magnetic sensor device formed using SOI CMOS techniques includes a substrate, a silicon oxide layer and in some cases a plurality of gated regions. A first terminal is located between two innermost gated regions and supplies a supply voltage. A second and a third ... | 06/07/2005 |
| 6774444 | Semiconductor, solid-state imaging device, and method for making the same A method for making a solid-state imaging device that can form a first P-type well region deep in a substrate without being affected by the heat applied during an epitaxial growth process is disclosed. The method includes a first step of preparing a substrate compos... | 08/10/2004 |
| 6747331 | Method and packaging structure for optimizing warpage of flip chip organic packages An electronic packaging structure and method of forming thereof wherein the structure is constituted of a modular arrangement which reduces stresses generated in a chip, underfill, and ball grid array connection with a flexible substrate in the form of an organic ma... | 06/08/2004 |
| 6744086 | Current switched magnetoresistive memory cell A ferromagnetic thin-film based digital memory cell with a memory film of an anisotropic ferromagnetic material and with a source layer positioned on one side thereof so that a majority of conduction electrons passing therefrom have a selected spin orientation to be... | 06/01/2004 |
| 6740945 | Apparatus and method for contacting a conductive layer A structure and method for creating a contact between a conductive layer and a pad for dissipating electrostatic charges comprising the steps of, forming a pad and a composite insulating layer between and over conductive plates on a substrate, wherein the insulating... | 05/25/2004 |
| 6734517 | Semiconductor laser diode module A semiconductor laser diode module in which a laser diode and an optical fiber are optically coupled with each other efficiently irrespective of an ambient temperature change within the laser diode module. The laser diode module includes a laser diode, an optical sy... | 05/11/2004 |
| 6734516 | Monolithic lead-salt infrared radiation detectors and methods of formation A hybridized Lead-Salt infrared radiation detector includes a focal plane having a substrate and a sensitized, delineated Lead-Salt layer upon the substrate, the delineations forming a plurality of sections in a two-dimensional array. The detector also includes elec... | 05/11/2004 |
| 6720597 | Cladding of a conductive interconnect for programming a MRAM device using multiple magnetic layers A cladded conductive interconnect for programming a magnetoresistive memory device which includes a conductive material with a length, a first barrier conductive material positioned on the conductive material, and a multi-layer cladding region positioned along the l... | 04/13/2004 |
| 6703647 | Triple base bipolar phototransistor A high gain phototransistor uses lateral and vertical transistor structures and a triple base. The base regions of two vertical structures are in the bulk of a semiconductor substrate while the base of a single lateral structure is adjacent a light receiv... | 03/09/2004 |
| 6653704 | Magnetic memory with tunnel junction memory cells and phase transition material for controlling current to the cells A magnetic random access memory (MRAM) array includes a plurality of magnetic tunnel junction (MTJ) memory cells and a plurality of non-electronic switching elements, each MTJ memory cell and an associated switching element being in electrical series conn... | 11/25/2003 |
| 6649988 | Semiconductor pressure sensor decreasing creep stress in <110> crystalline axis direction Metal wiring segments, which are located at peripheral positions of a diaphragm, are formed on a main surface of a thick portion of a semiconductor substrate. A ratio S/d is larger than 100, where an area of the diaphragm is S μm2 and a thickn... | 11/18/2003 |
