Did You Know...
...that Thomas Edison's patent application on his phonograph was approved by the Patent Office in just seven weeks? In contrast, it took Gordon Gould, the inventor of the laser, 30 years to obtain his patent -- finally awarded in 1988!
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| Number | Title | Issue Date |
| 8188510 | Semiconductor light-emitting device According to one embodiment, a semiconductor light-emitting device having high light extraction efficiency is provided. The semiconductor light-emitting device includes a light transmissive substrate; a nitride semiconductor layer of a first conduction type formed o... | 05/29/2012 |
| 8178896 | Light emitting element A light emitting device includes a pair of electrodes facing to each other and a phosphor layer which is sandwiched between the pair of electrodes and includes phosphor particles placed therein. The phosphor particles include an n-type nitride semiconductor part and... | 05/15/2012 |
| 8143643 | Light device and fabrication method thereof The present invention discloses a light device and a fabrication method thereof. An object of the present invention is to provide the light device and the fabrication method thereof an electric/thermal/structural stability is obtained, and a P-type electrode and an ... | 03/27/2012 |
| 8134175 | Nanocrystals including III-V semiconductors Semiconductor nanocrystals including III-V semiconductors can include a core including III-V alloy. The nanocrystal can include an overcoating including a II-VI semiconductor.teh ... | 03/13/2012 |
| 8134176 | Light-emitting diode and light-emitting diode lamp The present invention provides a light-emitting diode (10) including a substrate (101) made of a first conductive type silicon (Si) single crystal, a pn junction structured light-emitting section (40) composed of a III-group nitride semiconducto... | 03/13/2012 |
| 8125001 | Method for manufacturing gallium oxide based substrate, light emitting device, and method for manufacturing the light emitting device A light emitting device includes a gallium oxide based substrate, a gallium oxynitride based layer on the gallium oxide based substrate, a first conductivity-type semiconductor layer on the gallium oxynitride based layer, an active layer on the first conductivity-ty... | 02/28/2012 |
| 8115230 | Light emitting device, light emitting device package and lighting system Disclosed are a light emitting device, a light emitting device package, and a lighting system. The light emitting device includes an oxide including gallium aluminum over a gallium oxide substrate, a nitride including gallium aluminum over the oxide including galliu... | 02/14/2012 |
| 8110849 | Light emitting device and method of manufacturing the same A light emitting device is provided. The light emitting device comprises a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, and an InNO layer. The active layer is disposed on the first conductive semiconductor layer... | 02/07/2012 |
| 8110848 | Substrate for epitaxy and method of preparing the same The substrate is used for opto-electric or electrical devices and comprises a layer of nitride grown by means of vapor phase epitaxy growth wherein both main surfaces of the nitride substrate are substantially consisting of non N-polar face and N-polar face respecti... | 02/07/2012 |
| 8110851 | Nitride-based semiconductor device and method for fabricating the same A nitride-based semiconductor light-emitting device 100 includes a GaN substrate 10, of which the principal surface is an m-plane 12, a semiconductor multilayer structure 20 that has been formed on the m-plane 12 of the GaN-based s... | 02/07/2012 |
| 8110850 | Semiconductor light emitting device A semiconductor light emitting device is provided. The semiconductor light emitting device comprises a plurality of compound semiconductor layers including a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer, and a lay... | 02/07/2012 |
| 8106420 | Light emitting device including semiconductor nanocrystals A light emitting device can have a layered structure and include a plurality of semiconductor nanocrystals. The layers of the device can be covalently bonded to each other. The device can include continuous chain of covalent bonds extending from the first electrode ... | 01/31/2012 |
| 8106419 | Group-III nitride compound semiconductor light-emitting device, method of manufacturing group-III nitride compound semiconductor light-emitting device, and lamp A group-III nitride compound semiconductor light-emitting device, a method of manufacturing the group-III nitride compound semiconductor light-emitting device, and a lamp. The method includes the steps of: forming an intermediate layer (12) made of a group-II... | 01/31/2012 |
| 8101968 | Group III nitride substrate, epitaxial layer-provided substrate, methods of manufacturing the same, and method of manufacturing semiconductor device A group III nitride substrate on which an epitaxially grown layer of good quality can be formed, and a method of manufacturing the same are obtained. A GaN substrate is one of the following: a group III nitride substrate, wherein the number of atoms of an acid mater... | 01/24/2012 |
| 8084781 | Compound semiconductor device A compound semiconductor device (1) includes a compound semiconductor having a stacked structure (100) of a hexagonal single crystal layer (101), a boron phosphide-based semiconductor layer (102) formed on a surface of the hexagonal singl... | 12/27/2011 |
| 8084782 | Light-emitting film, light-emitting device and production method thereof Provided is a light-emitting film having controllable resistivity, and a high-luminance light-emitting device, which can be driven at a low voltage, using such light-emitting film. The light-emitting film includes Cu as an addition element in a zinc sulfide compound... | 12/27/2011 |
| 8076694 | Nitride semiconductor element having a silicon substrate and a current passing region It is an object of the present invention to provide a nitride semiconductor element, which uses Si as a substrate, and whose voltage in the forward direction (Vf) is lower than in the prior art. In the nitride semiconductor element which has a nitride semiconductor ... | 12/13/2011 |
| 8067785 | Organic light emitting apparatus and method of producing the same Provided are an organic light emitting apparatus for use in, for example, a flat device display, and a method of producing the apparatus. The organic light emitting apparatus has sides formed by division at ends of its substrate. Three-dimensional portions are forme... | 11/29/2011 |
| 8067786 | Gallium nitride material devices including conductive regions Semiconductor structures comprising a III-nitride (e.g., gallium nitride) material region and methods associated with such structures are provided. In some embodiments, the structures include an electrically conductive material (e.g., gold) separated from certain ot... | 11/29/2011 |
| 8030682 | Zinc-blende nitride semiconductor free-standing substrate, method for fabricating same, and light-emitting device employing same A zinc-blende nitride semiconductor free-standing substrate has a front surface and a back surface opposite the front surface. The distance between the front and back surfaces is not less than 200 μm. The area ratio of the zinc-blende nitride semiconductor to the f... | 10/04/2011 |
| 8017972 | Multilayered white light emitting diode using quantum dots and method of fabricating the same A multilayered white light emitting diode and a method of fabricating the same include forming a phosphor mixture layer including a green phosphor and a blue phosphor on a UV light emitting diode and forming a red quantum dot layer on the phosphor mixture layer. In ... | 09/13/2011 |
| 8017973 | Nitride semiconductor light-emitting device including a buffer layer on a substrate and method for manufacturing the same There are provided a nitride semiconductor light-emitting device and a method for manufacturing the same. The nitride semiconductor light-emitting device includes a buffer layer on a sapphire substrate, wherein the buffer layer includes a plurality of layers having ... | 09/13/2011 |
| 7977702 | Surface textured LEDs and method for making the same A light-emitting device that includes an LED and a light extraction layer and the method for making the same are disclosed. The LED includes a substrate on which an active layer is sandwiched between a p-type layer and an n-type layer, the active layer generating li... | 07/12/2011 |
| 7977703 | Nitride semiconductor device having a zinc-based substrate A nitride semiconductor device includes a semiconductor substrate; a first nitride semiconductor layer provided on the semiconductor substrate; a mask layer having opening portions, provided on the first nitride semiconductor layer; a second nitride semiconductor la... | 07/12/2011 |
| 7964891 | Light-emitting element, display device, and electronic appliance The present invention provides a light-emitting element having a structure in which the drive voltage is comparatively low and a light-emitting element in which the increase in the drive voltage over time is small. Further, the present invention provides a display d... | 06/21/2011 |
| 7964890 | Epitaxial substrate, method of making same and method of making a semiconductor chip Proposed is an epitaxial substrate, particularly for making thin-film semiconductor chips based on III-V semiconductors, comprising a sacrificial layer that is applied to a wafer substrate and whose band gap is smaller than the band gap of the surrounding substrate,... | 06/21/2011 |
| 7928468 | Buffer structure for semiconductor device and methods of fabrication Embodiments of the present invention describe a semiconductor device having an buffer structure and methods of fabricating the buffer structure. The buffer structure is formed between a substrate and a quantum well layer to prevent defects in the substrate and quant... | 04/19/2011 |
| 7928467 | Nitride semiconductor light emitting device and manufacturing method of the same There is provided a nitride semiconductor light emitting device including: a light emitting structure including n-type and p-type nitride semiconductor layers and an active layer disposed therebetween; n- and p-electrodes electrically connected to the n-type and p-t... | 04/19/2011 |
| 7923749 | III-nitride compound semiconductor light emitting device The present invention relates a III-nitride compound semiconductor light emitting device in which a first layer composed of a carbon-containing compound layer, such as an n-type or p-type silicon carbide (SiC), silicon carbon nitride (SiCN) or carbon nitride layer (... | 04/12/2011 |
| 7915635 | Semiconductor light-emitting element and substrate used in formation of the same For a semiconductor laser, a stacked member comprising an active layer is formed on the surface of a GaN single-crystal substrate, a defect aggregation portion is formed on the rear face of the GaN single-crystal substrate, and an electrode is formed so as to be ele... | 03/29/2011 |
| 7915636 | III-nitride semiconductor light emitting device The present disclosure relates to a III-nitride semiconductor light emitting device which improves external quantum efficiency by using a p-type nitride semiconductor layer with a rough surface, the p-type nitride semiconductor layer including: a first nitride semic... | 03/29/2011 |
| 7897993 | GaN based luminescent device on a metal substrate A compound semiconductor luminescent device characterized by comprising an electroconductive substrate, a compound semiconductor function layer including a GaN layer, an electrode, an adhesiveness-enhancing layer, and a bonding layer, which are stacked in this order... | 03/01/2011 |
| 7888700 | Quantum dot light emitting device An inorganic light emitting device including a transparent substrate; a first electrode; a second electrode opposed to the first electrode; a polycrystalline inorganic light emitting layer including core/shell quantum dots within an inorganic semiconductor matrix an... | 02/15/2011 |
| 7884388 | Light emitting diode having a first GaN layer and a first semiconductor layer each having a predetermined thickness and fabrication method therof A light emitting diode (LED) and a method for fabricating the same, capable of improving brightness by forming a InGaN layer having a low concentration of indium, and whose lattice constant is similar to that of an active layer of the LED, is provided. The LED inclu... | 02/08/2011 |
| 7880192 | Nitride semiconductor light emitting element and nitride semiconductor light emitting device A nitride semiconductor device according to the present invention includes a n-GaN substrate 10 and a semiconductor multilayer structure arranged on the principal surface of the n-GaN substrate 10 and including a p-type region, an n-type region and an ... | 02/01/2011 |
| 7868351 | Light emitting device A light emitting device includes a pair of electrodes, wherein at least one electrode is transparent or semi-transparent, and an phosphor layer provided between the pair of electrodes, wherein the phosphor layer includes a layer having nitride semiconductor particle... | 01/11/2011 |
| 7868350 | Nitride semiconductor light-emitting device and method for manufacturing the same Provided is a nitride semiconductor light-emitting device. The device includes a buffer layer, a first conduction type semiconductor layer, an active layer, and a second conduction type semiconductor layer. The buffer layer comprises amorphous metal. The first condu... | 01/11/2011 |
| 7859008 | Crystalline composition, wafer, device, and associated method A crystalline composition is provided that includes gallium and nitrogen. The crystalline composition may have an amount of oxygen present in a concentration of less than about 3×1018 per cubic centimeter, and may be free of two-dimensional planar bounda... | 12/28/2010 |
| 7847314 | Gallium nitride-based compound semiconductor light-emitting device It is an object of the present invention to provide a gallium nitride-based compound semiconductor light-emitting device that is excellent in light output efficiency and needs only a low driving voltage (Vf). The inventive gallium nitride-based compound semiconducto... | 12/07/2010 |
| 7842966 | Compound semiconductor light-emitting diode and method for fabrication thereof A compound semiconductor light-emitting diode includes a light-emitting layer (133) formed of aluminum-gallium-indium phosphide, a light-emitting part (13) having component layers individually formed of a Group III-V compound semiconductor, a transpare... | 11/30/2010 |
