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| Number | Title | Issue Date |
| 8053806 | Group III nitride semiconductor device and epitaxial substrate A group III nitride semiconductor device having a gallium nitride based semiconductor film with an excellent surface morphology is provided. A group III nitride optical semiconductor device 11a includes a group III nitride semiconductor supporting base... | 11/08/2011 |
| 8039867 | ZnO-containing semiconductor layer, its manufacture method, and semiconductor light emitting device A ZnO-containing semiconductor layer, doped with Se, has an emission peak wavelength in visual light and has a band gap equivalent to a band gap of ZnO. ... | 10/18/2011 |
| 8008686 | Light emitting diode chip An LED chip includes a substrate, a semiconductor device layer, a wall structure, and a number of electrodes. The semiconductor device layer is disposed on the substrate and includes a first-type doped semiconductor layer disposed on the substrate, an active layer d... | 08/30/2011 |
| 7968905 | ZnO-containing semiconductor layer and ZnO-containing semiconductor light emitting device A ZnO-containing semiconductor layer contains Se or S added to ZnO and has an emission peak wavelength of ultraviolet light and an emission peak wavelength of visual light. By combining the ZnO-containing semiconductor layer with phosphor or semiconductor which is e... | 06/28/2011 |
| 7915633 | Nitride semiconductor device and manufacturing method thereof A nitride semiconductor device includes: a semiconductor substrate; a p-type semiconductor layer formed over the semiconductor substrate, made of a nitride semiconductor, and containing first impurities; and an insulating film contacting the p-type semiconductor lay... | 03/29/2011 |
| 7915634 | Laser diode epitaxial wafer and method for producing same A laser diode epitaxial wafer includes an n-type GaAs substrate, an n-type cladding layer formed on the n-type GaAs substrate, an active layer formed on the n-type cladding layer, and a p-type cladding layer formed on the active layer. The n-type cladding layer, the... | 03/29/2011 |
| 7859007 | Light-emitting device and manufacturing method thereof To provide a light-emitting device using a nitride semiconductor which can attain high-power light emission by highly efficient light emission and a manufacturing method thereof, the light-emitting device includes a GaN substrate and a light-emitting layer including... | 12/28/2010 |
| 7728347 | ZnO layer and semiconductor light emitting device A ZnO layer is provided which can obtain emission at a wavelength longer than blue (e.g., 420 nm) and has a novel structure. A transition energy narrower by 0.6 eV or larger than a band gap of ZnO can be obtained by doping S into a ZnO layer. ... | 06/01/2010 |
| 7714350 | Gallium nitride based semiconductor device and method of manufacturing same A gallium nitride based semiconductor device comprises: a first gallium nitride based semiconductor film doped with magnesium; and a second gallium nitride based semiconductor film provided on the first gallium nitride based semiconductor film and doped with magnesi... | 05/11/2010 |
| 7679102 | Carbon passivation in solid-state light emitters A solid state light emitting device comprises one or more active layers comprising semiconductor nano-particles in a host matrix, e.g. silicon nano-particles in silicon dioxide or silicon nitride. The incorporation of carbon in the active layers provides a great imp... | 03/16/2010 |
| 7629625 | Method for producing ZnTe system compound semiconductor single crystal, ZnTe system compound semiconductor single crystal, and semiconductor device The present invention relates to a method for producing an n-type ZnTe system compound semiconductor single crystal having high carrier concentration and low resistivity, the ZnTe system compound semiconductor single crystal, and a semiconductor device produced by u... | 12/08/2009 |
| 7589358 | Phosphor single crystal substrate and method for preparing the same, and nitride semiconductor component using the same A light emitting device having a phosphor substrate, which comprises nitride containing at least one element selected from Group XIII (IUPAC 1989) having a general formula XN, wherein X is at least one element selected from B, Al, Ga and In, a general formula XN:Y, ... | 09/15/2009 |
| 7560749 | Light emitting material, light emitting device, and electronic device An object is to provide a novel light emitting material. Another object is to provide a light emitting device and an electronic device with reduced power consumption. Still another object is to provide a light emitting device and an electronic device which can be ma... | 07/14/2009 |
| 7525128 | Zinc-oxide-based double-heterostructure light-emitting diode A light-emitting zinc oxide based compound semiconductor device of a double-heterostructure. The double-heterostructure includes a light-emitting layer formed of a low-resistivity Mg1−x−yCdxZnyO; 0≦x | 04/28/2009 |
| 7501667 | Nitride semiconductor light-emitting device A nitride semiconductor light-emitting device is provided including: a substrate made of a nitride semiconductor; a semiconductor layer made of a nitride semiconductor containing a p-type impurity, the semiconductor layer being formed as contacting an upper surface ... | 03/10/2009 |
| 7473941 | Structures for reducing operating voltage in a semiconductor device A light-emitting device comprises an active region configured to generate light in response to injected charge, and an n-type material layer and a p-type material layer, wherein at least one of the n-type material layer and the p-type material layer is doped with at... | 01/06/2009 |
| 7468529 | Porous UV-emitting semiconductor on porous substrate as sterilizing filter made by filtering suspended semiconductor particles A filter for trapping, sterilizing, and decomposing organic matter, bacteria, viruses, and other harmful substances is provided at low cost and extremely high efficiency. A semiconductor material having a light emitting function is formed in the interior or on the s... | 12/23/2008 |
| 7446348 | Light emitting device with filled tetrahedral (FT) semiconductor in the active layer A light emitting device includes an active layer including atoms A of a matrix semiconductor having a tetrahedral structure, a heteroatom D substituted for the atom A in a lattice site, and a heteroatom Z inserted into an interstitial site positioned closest to the ... | 11/04/2008 |
| 7439609 | Doping of gallium nitride by solid source diffusion and resulting gallium nitride structures An improved p-type gallium nitride-based semiconductor device is disclosed. The device includes a structure with at least one p-type Group III nitride layer that includes some gallium, a first silicon dioxide layer on the p-type layer, a layer of a Group II metal so... | 10/21/2008 |
| 7427785 | Nitride-based light emitting device and manufacturing method thereof A light emitting device according to an exemplary embodiment of the present invention includes: an n-type cladding layer; a p-type cladding layer; an active layer interposed between the n-type cladding layer and the p-type cladding layer; and an ohmic contact layer ... | 09/23/2008 |
| 7420204 | Organic transistor An organic transistor is capable of emitting light at high luminescence efficiency, operating at high speed, handling large electric power, and can be manufactured at low cost. The organic transistor includes an organic semiconductor layer between a source electrode... | 09/02/2008 |
| 7416791 | Osmium complexes and related organic light-emitting devices Osmium complexes having the formula [Os(II) (N—N)2L—L]2+ 2A− (or A2−), or [Os(II) N—N(L—L)2]2+ 2A− (or A2−), where N—N is a bipyridine or phenanthroline ligand,... | 08/26/2008 |
| 7417264 | Top-emitting nitride-based light emitting device and method of manufacturing the same Provided are a top-emitting N-based light emitting device and a method of manufacturing the same. The device includes a substrate, an n-type clad layer, an active layer, a p-type clad layer, and a multi ohmic contact layer, which are sequentially stacked. The multi ... | 08/26/2008 |
| 7417263 | Transparent electrode In order to emit a light from an electrode side, in semiconductor light emitting devices such as LED and the like, and liquid crystal, the electrode is formed of a transparent material so as to transmit a light through the transparent electrode and exit the light. A... | 08/26/2008 |
| 7411225 | Light source apparatus A light source apparatus and a fabrication method thereof can prevent light interference between light emitting devices adjacent to each other by forming a groove in a sub-mount and bonding a light emitting device to the groove, enhance heat radiating effect as well... | 08/12/2008 |
| 7404913 | Codoped direct-gap semiconductor scintillators Fast, bright inorganic scintillators at room temperature are based on radiative electron-hole recombination in direct-gap semiconductors, e.g. CdS and ZnO. The direct-gap semiconductor is codoped with two different impurity atoms to convert the semiconductor to a fa... | 07/29/2008 |
| 7402840 | Selective filtering of wavelength-converted semiconductor light emitting devices A structure includes a semiconductor light emitting device including a light emitting layer disposed between an n-type region and a p-type region. The light emitting layer emits first light of a first peak wavelength. A wavelength-converting material that absorbs th... | 07/22/2008 |
| 7388327 | Light-emitting device and display apparatus The object of the present invention is to provide a light-emitting device that emits phosphorescence with high efficiency. The light-emitting device of the present invention includes a host containing two kinds of dopants, wherein a dopant having a longer maximum-em... | 06/17/2008 |
| 7381984 | Thin film transistor and flat panel display including the same Provided are a thin film transistor and an organic electrolumienscent display including the same. The organic electroluminescent display includes: a gate electrode; source and drain electrodes that are insulated from the gate electrode; an organic semiconductor laye... | 06/03/2008 |
| 7371468 | Organic EL light emitting device and liquid crystal display using the same The organic EL light emitting device of the invention has an organic EL light emitting layer (3a, 3b, 3c) and an electrode (1, 4) for applying a voltage to the organic EL light emitting layer. The organic EL light emi... | 05/13/2008 |
| 7371470 | Pyran derivative A light-emitting compound that can be easily applied to vacuum vapor deposition and exhibit long wavelength light is disclosed. Further, a light-emitting element without inferior luminescence properties due to the carbonization of a light-emitting compound during va... | 05/13/2008 |
| 7368759 | Semiconductor light-emitting device A semiconductor light emitting device has a light-emitting portion formed on a semiconductor substrate, an As-based p-type contact layer formed thereon, a current spreading layer formed thereon of a metal oxide material, and a buffer layer formed between the p-type ... | 05/06/2008 |
| 7365369 | Nitride semiconductor device A nitride semiconductor device used chiefly as an LD and an LED element. In order to improve the output and to decrease Vf, the device is given either a three-layer structure in which a nitride semiconductor layer doped with n-type impurities serving as an n-type co... | 04/29/2008 |
| 7365366 | Boron phosphide-based semiconductor light-emitting device and production method thereof A boron phosphide-based semiconductor light-emitting device, comprising: a crystalline substrate; a first semiconductor layer formed on said crystalline substrate, said first semiconductor layer including a light-emitting layer, serving as a base layer and having a ... | 04/29/2008 |
| 7358409 | Substituted anthryl derivative and electroluminescence device using the same There is disclosed a substituted anthryl derivative is represented by the following general formula (1). The use of the substituted anthryl derivative allows the production of an organic electroluminescence device showing an extremely pure luminescence hue, and an o... | 04/15/2008 |
| 7357989 | Di(het)arylaminothiazole derivatives and their use in organic light-emitting diodes(OLEDs) and organic photovoltaic components Novel 4,5-di(het)aryl-substituted 2-(N,N-di(het)arylamino)-thiazole derivatives of general structure (a), whereby the following applies: R1, R2and R3 and R4, independent of one another, are each a monofunctional (het)aryl ... | 04/15/2008 |
| 7358159 | Method for manufacturing ZnTe compound semiconductor single crystal ZnTe compound semiconductor single crystal, and semiconductor device The present invention relates to a method for producing an n-type ZnTe system compound semiconductor single crystal having high carrier concentration and low resistivity, the ZnTe system compound semiconductor single crystal, and a semiconductor device produced by u... | 04/15/2008 |
| 7351356 | Luminescent material, especially for LED application UV-blue excitable green luminescent material including an Eu-doped oxynitride host lattice with general composition MSi2O2N2, wherein M is at least one of an alkaline earth metal chosen from the group Ca, Sr, Ba. ... | 04/01/2008 |
| 7329902 | IR-light emitters based on SWNT's (single walled carbon nanotubes), semiconducting SWNTs-light emitting diodes and lasers The present invention relates to a new light emitters that exploit the use of semiconducting single walled carbon nanotubes (SWNTs). Experimental evidences are given on how it is possible, within the standard silicon technology, to devise light emitting diodes (LEDs... | 02/12/2008 |
| 7312480 | Semiconductor device and method of fabricating the same A first buffer layer is formed on a substrate at a lower temperature than a single-crystal-growth-temperature, one or more of a layer composed of a nitride containing neither Ga nor In, a layer which has two or more thin films having different moduli of elasticity c... | 12/25/2007 |
