Did You Know...
...that power steering was invented by independent inventor Francis W. Davis? As chief engineer in the 1920s of the truck division of the Pierce Arrow Motor Car Company, he saw how hard it was to steer heavy vehicles. So that he would be able to keep the profits from his future invention, Davis left his job, rented a small engineering shop in Waltham, Mass., and developed a hydraulic power steering system that led to power steering.
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| Number | Title | Issue Date |
| 8089093 | Nitride semiconductor device including different concentrations of impurities A nitride semiconductor device having a substrate electrode establishing an excellent ohmic contact with a nitride semiconductor substrate is provided. The nitride semiconductor device includes a substrate having an electrode formed on at least one main surface. The... | 01/03/2012 |
| 8044430 | Nitride semiconductor light-emitting device comprising multiple semiconductor layers having substantially uniform N-type dopant concentration A nitride semiconductor light-emitting device according to the present invention includes a nitride based semiconductor substrate 10 and a nitride based semiconductor multilayer structure that has been formed on the semiconductor substrate 10. The mult... | 10/25/2011 |
| 8030681 | Group III nitride substrate, semiconductor device comprising the same, and method for producing surface-treated group III nitride substrate A group III nitride substrate in one embodiment has a surface layer. The surface layer contains 3 at. % to 25 at. % of carbon and 5×1010 atoms/cm2 to 200×1010 atoms/cm2 of a p-type metal element. The group III nitride su... | 10/04/2011 |
| 8030679 | Nitride semiconductor light emitting device and fabrication method therefor Disclosed is a nitride semiconductor light emitting device including: one or more AllnN layers; an In-doped nitride semiconductor layer formed above the AllN layers; a first electrode contact layer formed above the In-doped nitride semiconductor layer; an active lay... | 10/04/2011 |
| 8030680 | Nitride semiconductor light-emitting device and method for manufacturing the same Disclosed are a nitride semiconductor light emitting device and a method for manufacturing the same. The nitride semiconductor light emitting device includes a first nitride layer, an active layer including at least one delta-doping layer on the first nitride layer ... | 10/04/2011 |
| 7992108 | Impurity concentration distribution predicting method and program for deciding impurity concentration distribution First and second evaluation substrates are prepared, a direction perpendicular to a surface of the first evaluation substrate being defined by first indices, and the direction defined by the first indices being inclined from a normal direction of a surface of the se... | 08/02/2011 |
| 7968904 | Organic electroluminescence device There is provided an organic electroluminescence device that is high in light emitting efficiency and excellent in driving durability, which contains at least a light emitting layer between an anode and a cathode opposing each other, and further has either 1) an org... | 06/28/2011 |
| 7956380 | Semiconductor light-emitting device A semiconductor light-emitting device is provided. In an InGaN-based semiconductor light-emitting device including an Ag electrode, a semiconductor layer on the contact side of at least the Ag electrode is a dislocation semiconductor layer of which dislocation densi... | 06/07/2011 |
| 7943954 | LED fabrication via ion implant isolation A semiconductor light emitting diode includes a semiconductor substrate, an epitaxial layer of n-type Group III nitride on the substrate, a p-type epitaxial layer of Group III nitride on the n-type epitaxial layer and forming a p-n junction with the n-type layer, an... | 05/17/2011 |
| 7893454 | Method for producing structured substrate, structured substrate, method for producing semiconductor light emitting device, semiconductor light emitting device, method for producing semiconductor device, semiconductor device, method for producing device, and device A semiconductor light emitting device or a semiconductor device produced using a nitride type III-V group compound semiconductor substrate on which a plurality of second regions made of a crystal having a second average dislocation density are regularly arranged in ... | 02/22/2011 |
| 7851821 | Group III nitride semiconductor device, epitaxial substrate, and method of fabricating group III nitride semiconductor device A group III nitride semiconductor device having a gallium nitride based semiconductor film with an excellent surface morphology is provided. A group III nitride optical semiconductor device 11a includes a group III nitride semiconductor supporting base... | 12/14/2010 |
| 7847313 | Group III-V nitride-based semiconductor substrate and group III-V nitride-based light emitting device A group III-V nitride-based semiconductor substrate is formed of a group III-V nitride-based semiconductor single crystal containing an n-type impurity. The single crystal has a periodical change in concentration of the n-type impurity in a thickness direction of th... | 12/07/2010 |
| 7829912 | Efficient carrier injection in a semiconductor device Semiconductor devices such as VCSELs, SELs, LEDs, and HBTs are manufactured to have a wide bandgap material near a narrow bandgap material. Electron injection is improved by an intermediate structure positioned between the wide bandgap material and the narrow bandga... | 11/09/2010 |
| 7768031 | Light emitting device and method of producing a light emitting device To provide a DC drive type inorganic light emitting device excellent in luminous efficiency, provided is a light emitting device, including: a substrate; and a first layer and a second layer laminated on the substrate, in which the second layer is formed of a first ... | 08/03/2010 |
| 7535031 | Semiconductor light emitting device with lateral current injection in the light emitting region A semiconductor light emitting device includes an active region, an n-type region, and a p-type region comprising a portion that extends into the active region. The active region may include multiple quantum wells separated by barrier layers, and the p-type extensio... | 05/19/2009 |
| 7521729 | Nitride semiconductor laser element having impurity introduction region A nitride semiconductor laser element, has: a nitride semiconductor layer including a first nitride semiconductor layer, an active layer, and a second nitride semiconductor layer laminated in that order; and resonator end faces formed mutually opposing at the end of... | 04/21/2009 |
| 7518162 | Semiconductor light emitting device A semiconductor light emitting device has a gallium nitride compound semiconductor, and a first cladding layer of a first conductivity type, an active layer, an electron barrier layer of a second conductivity type and made of InxAlyGa1-x-y... | 04/14/2009 |
| 7518161 | Semiconductor light-emitting device, surface-emission laser diode, and production apparatus thereof, production method, optical module and optical telecommunication system A semiconductor light-emitting device has a semiconductor layer containing Al between a substrate and an active layer containing nitrogen, wherein Al and oxygen are removed from a growth chamber before growing said active layer and a concentration of oxygen incorpor... | 04/14/2009 |
| 7511314 | Light emitting device and method of fabricating the same Disclosed is a light-emitting device (100) has a light-emitting layer portion (24) which is composed of a group III-V compound semiconductor and a transparent thick-film semiconductor layer (90) with a thickness of not less than 40 μm which is ... | 03/31/2009 |
| 7501666 | Method for forming p-type semiconductor region, and semiconductor element A substrate 103 is set in a film-forming apparatus, such as a metal organic vapor phase epitaxy system 101, and a GaN buffer film 105, an undoped GaN film 107, and a GaN film 109 containing a p-type dopant are successively grown on... | 03/10/2009 |
| 7495264 | Semiconductor device with high dielectric constant insulating film and manufacturing method for the same A semiconductor device has a substrate and a dielectric film formed directly or indirectly on the substrate. The dielectric film contains a metal silicate film, and a silicon concentration in the metal silicate film is lower in a center portion in the film thickness... | 02/24/2009 |
| 7485901 | Highly doped III-nitride semiconductors A wide bandgap semiconductor material is heavily doped to a degenerate level. Impurity densities approaching 1% of the volume of the semiconductor crystal are obtained to greatly increase conductivity. In one embodiment, a layer of AlGaN is formed on a wafer by firs... | 02/03/2009 |
| 7442965 | Photonic crystal light emitting device A photonic crystal structure is formed in an n-type region of a III-nitride semiconductor structure including an active region sandwiched between an n-type region and a p-type region. A reflector is formed on a surface of the p-type region opposite the active region... | 10/28/2008 |
| 7436001 | Vertical GaN-based LED and method of manufacturing the same A vertical GaN-based LED and a method of manufacturing the same are provided. The vertical GaN-based LED includes an n-electrode, a first n-type GaN layer, a first AlGaN layer, a GaN layer, a second AlGaN layer, a second n-type GaN layer, an active layer, a p-type G... | 10/14/2008 |
| 7402838 | Nitride semiconductor device According to the nitride semiconductor device with the active layer made of the multiple quantum well structure of the present invention, the performance of the multiple quantum well structure can be brought out to intensify the luminous output thereof thereby contr... | 07/22/2008 |
| 7368750 | Semiconductor light-receiving device A semiconductor light-receiving device includes: a semi-insulating substrate; a semiconductor layer of a first conduction type that is formed on the semi-insulating substrate; a buffer layer of the first conduction type that is formed on the semi-insulating substrat... | 05/06/2008 |
| 7368759 | Semiconductor light-emitting device A semiconductor light emitting device has a light-emitting portion formed on a semiconductor substrate, an As-based p-type contact layer formed thereon, a current spreading layer formed thereon of a metal oxide material, and a buffer layer formed between the p-type ... | 05/06/2008 |
| 7366216 | Semiconductor laser element formed on substrate having tilted crystal orientation A semiconductor laser element having a structure in which at least one AlGaInP or GaInP layer is formed above a GaAs substrate. The crystal orientation of the principal plane of the GaAs substrate is tilted from (100) toward (111). When the total thickness of the at... | 04/29/2008 |
| 7356063 | Semiconductor surface emitting device This surface emitting semiconductor device 1 comprises a first conductivity type semiconductor region, an active layer, a second conductivity type semiconductor layer and current block semiconductor region. The first conductivity type semiconductor region is ... | 04/08/2008 |
| 7354477 | Method of growing GaN crystal, method of producing single crystal GaN substrate, and single crystal GaN substrate A low dislocation density GaN single crystal substrate is made by forming a seed mask having parallel stripes regularly and periodically aligning on an undersubstrate, growing a GaN crystal on a facet-growth condition, forming repetitions of parallel facet hills and... | 04/08/2008 |
| 7354780 | Semiconductor light emitting devices and methods A method for producing an optical output, including the following steps: providing first and second electrical signals; providing a bipolar light-emitting transistor device that includes collector, base, and emitter regions; providing a collector electrode coupled w... | 04/08/2008 |
| 7348602 | Nitride semiconductor device The present invention provides a nitride semiconductor light emitting device with an active layer of the multiple quantum well structure, in which the device has an improved luminous intensity and a good electrostatic withstanding voltage, thereby allowing the expan... | 03/25/2008 |
| 7345324 | Light emitting diodes with graded composition active regions A light emitting device in accordance with an embodiment of the present invention includes a first semiconductor layer of a first conductivity type having a first surface, and an active region formed overlying the first semiconductor layer. The active region include... | 03/18/2008 |
| 7345323 | Formation of Ohmic contacts in III-nitride light emitting devices P-type layers of a GaN based light-emitting device are optimized for formation of Ohmic contact with metal. In a first embodiment, a p-type GaN transition layer with a resistivity greater than or equal to about 7 Ω cm is formed between a p-type conductivity layer a... | 03/18/2008 |
| 7319238 | Semiconductor device and its manufacturing method An object of the present invention is to provide an active matrix type display unit having a pixel structure in which a pixel electrode formed in a pixel portion a scanning line (gate line) and a data line are suitably arranged, and high numerical aperture is realiz... | 01/15/2008 |
| 7303630 | Method of growing GaN crystal, method of producing single crystal GaN substrate, and single crystal GaN substrate Dotted seeds are implanted in a regular pattern upon an undersubstrate. A GaN crystal is grown on the seed implanted undersubstrate by a facet growth method. The facet growth makes facet pits above the seeds. The facets assemble dislocations from neighboring regions... | 12/04/2007 |
| 7297989 | Diboride single crystal substrate, semiconductor device using this and its manufacturing method Disclosed are a diboride single crystal substrate which has a cleavage plane as same as that of a nitride compound semiconductor and is electrically conductive; a semiconductor laser diode and a semiconductor device using such a substrate and methods of their manufa... | 11/20/2007 |
| 7294865 | Light emitting device and the use thereof A light emitting device includes a die and a photostimulable luminescent substance. The die has a first semiconductor light-emitting layer emitting a first color light having a first wavelength range, and a second semiconductor light-emitting layer emitting a second... | 11/13/2007 |
| 7294867 | Semiconductor light generating device The semiconductor light generating device comprises a light generating region 3, a first AlX1Ga1-X1N semiconductor (0≦X1≦1) layer 5 and a second AlX2Ga1-X2N semiconductor (0≦X2≦1) layer ... | 11/13/2007 |
| 7291868 | Light-emitting semiconductor device and a method of manufacturing it In layer structure 20 of a semiconductor laser of a surface emitting type, 21 and 24 represent an n-type contact layer made of n-type GaN and a p-layer made of p-type AlGaN, respectively. In the laser, an n-type DBR layer 22 made of n-typ... | 11/06/2007 |
