Did You Know...
...that Robert Adler has the dubious distinction of being the Father of the Couch Potato? Back in 1955 Adler was employed by what was then Zenith Radio Corp., where he was charged to invent something that would allow viewers to turn down the TV volume without leaving their chairs. After a series of flops (such as a wired contraption that people tripped over), Adler hit on the idea of using sound waves. Thus the Remote Control was born...
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| Number | Title | Issue Date |
| 8134137 | Memory device constructions, memory cell forming methods, and semiconductor construction forming methods Memory device constructions include a first column line extending parallel to a second column line, the first column line being above the second column line; a row line above the second column line and extending perpendicular to the first column line and the second ... | 03/13/2012 |
| 7994491 | PCRAM device with switching glass layer A method of forming a memory device, such as a PCRAM, including selecting a chalcogenide glass backbone material for a resistance variable memory function and devices formed using such a method. ... | 08/09/2011 |
| 7868310 | Resistance variable memory device and method of fabrication Methods and apparatus for providing a resistance variable memory device with agglomeration prevention and thermal stability. According to one embodiment, a resistance variable memory device is provided having at least one tin-chalcogenide layer proximate at least on... | 01/11/2011 |
| 7763878 | Phase changeable memory device structures A phase-changeable memory device may include a substrate, an insulating layer on the substrate, first and second electrodes, and a pattern of a phase-changeable material between the first and second electrodes. More particularly, the insulating layer may have a hole... | 07/27/2010 |
| 7759665 | PCRAM device with switching glass layer A memory device, such as a PCRAM, including a chalcogenide glass backbone material with germanium telluride glass and methods of forming such a memory device. ... | 07/20/2010 |
| 7714311 | Memory device, memory circuit and semiconductor integrated circuit having variable resistance A first variable resistor (5) is connected between a first terminal (7) and a third terminal (9) and increases/reduces its resistance value in accordance with the polarity of a pulse voltage applied between the first terminal (7) and the ... | 05/11/2010 |
| 7683359 | Structured silicon anode A silicon/lithium battery can be fabricated from a substrate. This allows the battery to be produced as an integrated unit on a chip. The battery includes an anode formed from an array of submicron structures including silicon fabricated on a substrate and a cathode... | 03/23/2010 |
| 7615769 | Nonvolatile memory device and fabrication method thereof A nonvolatile memory device and a method for its fabrication may ensure uniform operating characteristics of ReRAM. The ReRam may include a laminated resistance layer that determines phase of ReRAM on an upper edge of a lower electrode for obtaining a stable thresho... | 11/10/2009 |
| 7550755 | Semiconductor device with tunable energy band gap The present invention relates to a semiconductor device in which energy band gap can be reversibly varied. An idea of the present invention is to provide a device, which is based on a semiconducting material (306) in mechanical contact with a material that ex... | 06/23/2009 |
| 7482615 | High performance MOSFET comprising stressed phase change material The present invention relates to semiconductor devices that each comprises at least one field effect transistor (FET) containing an intrinsically stressed phase change material layer. The intrinsically stressed phase change material layer is arranged and constructed... | 01/27/2009 |
| 7423282 | Memory structure and method of manufacture A solid state electrolyte memory structure includes a solid state electrolyte layer, a metal layer on the solid state electrolyte layer, and an etch stop layer on the metal layer. ... | 09/09/2008 |
| 7420261 | Bulk nitride mono-crystal including substrate for epitaxy The invention relates to a substrate for epitaxy, especially for preparation of nitride semiconductor layers. Invention covers a bulk nitride mono-crystal characterized in that it is a mono-crystal of gallium nitride and its cross-section in a plane perpendicular to... | 09/02/2008 |
| 7405418 | Memory device electrode with a surface structure The invention relates to a memory device electrode, in particular for a resistively switching memory device, wherein the surface of the electrode is provided with a structure, in particular comprises one or a plurality of shoulders or projections, respectively. Furt... | 07/29/2008 |
| 7402829 | Structured silicon anode A silicon/lithium battery can be fabricated from a silicon substrate. This allows the battery to be produced as an integrated unit on a chip. The battery includes a silicon anode formed from sub-micron diameter pillars of silicon fabricated on an n-type silicon wafe... | 07/22/2008 |
| 7397060 | Pipe shaped phase change memory A memory cell device includes a bottom electrode, pipe shaped member comprising phase change material and a top electrode in contact with the pipe-shaped member. An electrically and thermally insulating material is inside the pipe-shaped member. An integrated circui... | 07/08/2008 |
| 7394088 | Thermally contained/insulated phase change memory device and method (combined) A memory device with improved heat transfer characteristics. The device first includes a dielectric material layer; first and second electrodes, vertically separated and having mutually opposed contact surfaces. A phase change memory element is encased within the di... | 07/01/2008 |
| 7394086 | Magnetic sensor and manufacturing method therefor A magnetic sensor comprises a substrate, magnetoresistive element of a spin-valve type, a bias magnetic layer (or a permanent magnet film), and a protective film, wherein the bias magnetic layer is connected with both ends of the magnetoresistive element and the upp... | 07/01/2008 |
| 7393798 | Resistance variable memory with temperature tolerant materials A PCRAM memory device having a chalcogenide glass layer, preferably comprising antimony selenide having a stoichometric formula of about Sb2Se3, and a metal-chalcogenide layer and methods of forming such a memory device. ... | 07/01/2008 |
| 7394087 | Phase-changeable memory devices and methods of forming the same A phase-changeable memory device includes a substrate having a contact region on an upper surface thereof. An insulating interlayer on the substrate has an opening therein, and a lower electrode is formed in the opening. The lower electrode has a nitrided surface po... | 07/01/2008 |
| 7368085 | Analyte detector An analyte detector including a device having a surface, wherein the device is capable of detecting a charge adjacent to the surface. The surface includes a plurality of molecules bonded thereto, wherein the molecules have a structure (I): | 05/06/2008 |
| 7366024 | Method and apparatus for operating a string of charge trapping memory cells A string of memory cells with a charge trapping structure is read, by selecting part of a memory cell selected by a word line. Part of the memory cell is selected by turning on one of the pass transistors on either side of the string of memory cells. The charge stor... | 04/29/2008 |
| 7365355 | Programmable matrix array with phase-change material A phase-change material is proposed for coupling interconnect lines an electrically programmable matrix array. Leakage may be reduced by optionally placing a thin insulating breakdown layer between the phase change material and at least one of the lines. The matrix ... | 04/29/2008 |
| 7365411 | Resistance variable memory with temperature tolerant materials A PCRAM memory device having a chalcogenide glass layer, preferably comprising antimony selenide having a stoichiometric formula of about Sb2Se3, and a metal-chalcogenide layer and methods of forming such a memory device. ... | 04/29/2008 |
| 7354789 | CMOS image sensor and method for fabricating the same CMOS image sensor and method for fabricating the same, the CMOS image sensor including a second conductive type semiconductor substrate having an active region and a device isolation region defined therein, wherein the active region has a photodiode region and a tra... | 04/08/2008 |
| 7348670 | Nanostructure, electronic device and method of manufacturing the same Cylinders having Al as a major constituent are orderly arrayed in an (Si, Ge) matrix. In a nanostructure in the form of a mixture film having a plurality of cylinders having Al as a major constituent, and a matrix region surrounding the plurality of cylinders and ha... | 03/25/2008 |
| RE40162 | Thin film transistor array substrate for a liquid crystal display A thin film transistor substrate for a liquid crystal display includes an insulating substrate, and a gate line assembly formed on the substrate. The gate line assembly has a double-layered structure with a lower layer exhibiting good contact characteristics with re... | 03/25/2008 |
| 7339184 | Systems and methods for harvesting and integrating nanowires The present invention is directed to methods to harvest, integrate and exploit nanomaterials, and particularly elongated nanowire materials. The invention provides methods for harvesting nanowires that include selectively etching a sacrificial layer placed on a nano... | 03/04/2008 |
| 7338857 | Increasing adherence of dielectrics to phase change materials A phase change material is formed over a dielectric material. An impurity is introduced into the dielectric to improve the adherence of said dielectric to said phase change material. ... | 03/04/2008 |
| 7335908 | Nanostructures and methods for manufacturing the same A resonant tunneling diode, and other one dimensional electronic, photonic structures, and electromechanical MEMS devices, are formed as a heterostructure in a nanowhisker by forming length segments of the whisker with different materials having different band gaps.... | 02/26/2008 |
| 7335395 | Methods of using pre-formed nanotubes to make carbon nanotube films, layers, fabrics, ribbons, elements and articles Methods of Using Preformed Nanotubes to Make Carbon Nanotube Films, Layers, Fabrics, Ribbons, Elements and Articles are disclosed. To make various articles, certain embodiments provide a substrate. Preformed nanotubes are applied to a surface of the substrate to cre... | 02/26/2008 |
| 7323708 | Phase change memory devices having phase change area in porous dielectric layer A phase change memory device includes a lower electrode and a porous dielectric layer having fine pores on the lower electrode. A phase change layer is provided in the fine pores of the porous dielectric layer. An upper electrode is provided on the phase change laye... | 01/29/2008 |
| 7307269 | Phase-change RAM containing AIN thermal dissipation layer and TiN electrode Provided is a phase-change RAM containing a substrate, a lower electrode, a phase-change material, an upper electrode and a thermal dissipation layer, wherein the thermal dissipation layer contains an aluminum-nitride thermal dissipation layer having a high heat con... | 12/11/2007 |
| 7286637 | Optical thin film and mirror using the same To provide an optical thin film structure capable of efficiently dissipating heat in an optical thin film which is generated upon irradiating a surface of an X-ray mirror made up of the optical thin film with an X-ray. The optical thin film having an isotope purity ... | 10/23/2007 |
| 7272048 | Nonvolatile memory device controlling common source line for improving read characteristic A non-volatile memory device capable of improving a read characteristic includes memory blocks, each memory block having a plurality of word lines. A common source line is arranged to be shared by the memory blocks. A first transistor is connected to the common sour... | 09/18/2007 |
| 7262501 | Large-area nanoenabled macroelectronic substrates and uses therefor A method and apparatus for an electronic substrate having a plurality of semiconductor devices is described. A thin film of nanowires is formed on a substrate. The thin film of nanowires is formed to have a sufficient density of nanowires to achieve an operational c... | 08/28/2007 |
| 7260999 | Force sensing membrane A force sensing membrane comprises (a) a first conductor that is movable toward a second conductor; (b) a second conductor; and (c) a composite material disposed between the first and second conductors for electrically connecting the first and second conductors unde... | 08/28/2007 |
| 7258838 | Solid state molecular probe device A solid state nanopore device including two or more materials and a method for fabricating the same. The device includes a solid state insulating membrane having an exposed surface, a conductive material disposed on at least a portion of the exposed surface of the s... | 08/21/2007 |
| 7243039 | System and method for determining probing locations on IC A method for identifying an area of a chip to be probed proceeds as follows. A callout list of failures is obtained from a tester, the list including cell name and pin for each failure. A Def file is interrogated to locate a Def entry matching the cell name, and a c... | 07/10/2007 |
| 7238435 | Polymeric compound and organic luminescence device A main chain-type or side chain-type polymeric compound having a structure wherein at least one metal complex segment having a plurality ligands is introduced into a main chain or a side chain is provided. In the case where the polymeric compound is the main chain-t... | 07/03/2007 |
| 7238425 | Telescoped multiwall nanotube and manufacture thereof The invention relates to a method for forming a telescoped multiwall nanotube. Such a telescoped multiwall nanotube may find use as a linear or rotational bearing in microelectromechanical systems or may find use as a constant force nanospring. In the method of the ... | 07/03/2007 |
