Class 252/951 - For vapor transport

Subclass of Class 252 - Compositions
Definition: Materials designed for conveying the foreign substance as
No. of patents: 47
Last issue date: 09/27/1994

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Number	Title	Issue Date
5350461	Low temperature P₂ O₅ oxide diffusion source The present invention relates to a solid low temperature phosphorus diffusion source that is an R2 O3 /P2 O5 compound in which the ratio of R2 O3 to P2 O5 is 1 to 5 and R i...	09/27/1994
5350460	High temperature phosphorus oxide diffusion source The present invention relates to a solid high temperature phosphorus diffusion source that is an R2 O3 /P2 O5 compound in which the ratio of R2 O3 to P2 O5 is 1 to 3 and R ...	09/27/1994
5322813	Method of making supersaturated rare earth doped semiconductor layers by chemical vapor deposition A CVD process for producing a rare earth-doped, epitaxial semiconductor layer on a substrate is disclosed. The process utilizes a silane or germane and a rare earth compound in the gas phase. By this method single phase, rare earth-doped semiconductor lay...	06/21/1994
5275966	Low temperature process for producing antimony-containing semiconductor materials Tri-isopropylantimony is used as a source of antimony in chemical vapor deposition production of semiconductor materials. The process can be used to introduce antimony as a dopant into III/V and II/VI semiconductor materials....	01/04/1994
5274149	Process for making alkyl arsine compounds Alkyl arsines are made by a reaction of gaseous arsine and the corresponding gaseous olefin in contact with at least one Bronsted acid catalyst. Products produced thereby are mono- and di-substituted arsines, e.g. alkyl and di-alkyl arsines, which contain...	12/28/1993
5120676	Use of phosphine and arsine compounds in chemical vapor deposition and chemical doping A MOCVD process for depositing an arsenic-containing film or a phosphorous-containing film utilizing a diprimary phosphine or arsine or an unsaturated hydrocarbon phosphine or arsine....	06/09/1992
5112775	Method of making diamond N-type semiconductor diamond p-n junction diode using diphosphorus pentoxide and hot filament CVD method A diamond n-type semiconductor including a substrate and a phosphorus element-doped diamond thin film disposed on the substrate. The diamond thin film is deposited by vaporizing a solution comprising a liquid organic compound as the diamond material with ...	05/12/1992
5096856	In-situ doped silicon using tertiary butyl phosphine The disclosure relates to a method of forming in situ phosphorous doped polysilicon wherein a surface upon which phosphorous doped polysilicon is to be deposited is placed in a vacuum furnace and, after low pressure HCl cleaning of the surface and furnace...	03/17/1992
5045496	Semi-insulating cobalt doped indium phosphide grown by MOCVD A process is described for growing at least one layer doped with a transition element of cobalt on a substrate by introducing a source of indium, such as tri ethyl indium, (C2 H5)3 In or, a source of a group V element, a s...	09/03/1991
4999223	Chemical vapor deposition and chemicals with diarsines and polyarsines A MOCVD process for depositing an arsenic-containing film utilizes an organoarsine compound having at least one As-As bond, in particular, diarsines and compounds having arsenic rings of 5 or 6 arsenic atoms....	03/12/1991
4904616	Method of depositing arsine, antimony and phosphine substitutes The present invention addresses the use of at least partially fluorinated organometallic compounds in reactive deposition applications. More specifically, the present invention addresses the use of the fluoroorganometallic compounds M(CF3)...	02/27/1990
4846902	Solid diffusion source of GD oxide/P205 compound and method of making silicon wafer A doping composition having a high rate of P2 O5 evolution as indicated by a thick deposited glassy film of about 1500-2000 angstroms at a doping temperature of only 900° C. for one hour, the composition comprising a gadolinium oxid...	07/11/1989
4800175	Phosphorous planar dopant source for low temperature applications A boron-containing heterocyclic compound prepared by reacting a primary amine of ammonia with an alkylene oxide or epoxide and then reacting concurrently or subsequently this reaction intermediate with a boric acid. This boron-containing heterocyclic comp...	01/24/1989
4749615	Semiconductor dopant source Semiconductor dopant sources are prepared by mixing particles of elemental silicon and at least one dopant oxide and heating the mixture to a temperature sufficient to initiate a reduction reaction while excluding external oxygen sources from affecting th...	06/07/1988
4716130	MOCVD of semi-insulating indium phosphide based compositions It has been found that through the use of ferrocene or iron pentacarbonyl based compounds, it is possible to produce semi-insulating epitaxial layers of indium phosphide-based compounds by an MOCVD process. Resistivities up to 1×109 ohm-cm hav...	12/29/1987
4596716	Porous silicon nitride semiconductor dopant carriers New porous semiconductor dopant carriers are disclosed together with a method for the diffusion doping of semiconductors by the vapor phase transport of an n or p type dopants, such as phosphorus, arsenic, antimony, boron, gallium, aluminum, zinc, silicon...	06/24/1986
4592793	Process for diffusing impurities into a semiconductor body vapor phase diffusion of III-V semiconductor substrates A process for diffusing a dopant into a III-V type semiconductor body is disclosed which comprises: (a) placing in a heating chamber which is substantially devoid of any oxidizing substance a deposition substrate possessing a dopant-containing layer which...	06/03/1986
4588455	Planar diffusion source Planar diffusion sources are provided wherein the source is a wafer of inert material, preferably silicon or silicon dioxide and wherein the wafer acts as a substrate for a surface coating comprising a salt, preferably the oxide, of the dopant element. An...	05/13/1986
4526826	Foam semiconductor dopant carriers New porous semiconductor dopant carriers are disclosed together with a method for the diffusion doping of semiconductors by the vapor phase transport of an n or p type dopant, such as phosphorus, arsenic, antimony, boron gallium, aluminum, zinc, silicon, ...	07/02/1985
4525429	Porous semiconductor dopant carriers New porous semiconductor dopant carriers are disclosed together with a method for the diffusion doping of semiconductors by the vapor phase transport of an n or p type dopant, such as phosphorus, arsenic, antimony, boron, gallium, aluminum, zinc, silicon,...	06/25/1985
4504331	Silicon dopant source in intermetallic semiconductor growth operations In intermetallic semiconductor crystal growth such as the growth of GaAs and GaAlAs, silicon as a dopant can be introduced more efficiently and evenly when provided as a gaseous hydride based compound involving a molecule where there are joined silicon at...	03/12/1985
4490192	Stable suspensions of boron, phosphorus, antimony and arsenic dopants Semiconductor doping compositions comprising a suspension of (a) a dopant material, in the form of finely divided spherical particles of narrow size distribution from about 0.1 D to D, where D is the diameter of the largest particle and is no more than ab...	12/25/1984
4447276	Molecular beam epitaxy electrolytic dopant source A method of growing crystalline semiconductors such as GaAs is disclosed. The method involves epitaxial deposition from the vapor phase and provides dopant material such as sulphur in the form of a molecular beam. The molecular beam is developed by effusi...	05/08/1984
4407694	Multi-range doping of epitaxial III-V layers from a single source Silicon doping of GaAs epitaxial layers grown using the AsCl3 /H2 /GaAs:Ga CVD system is accomplished using AsCl3 :SiCl4 liquid doping solutions. These solutions can be readily prepared with reproducible composi...	10/04/1983
4379006	B₂ O₃ Diffusion processes Disclosed is a method of evolving B2 O3 from certain B2 O3 containing glass-ceramics by heating the glass-ceramic in the pressure of helium as a carrier or transport gas....	04/05/1983
4373975	Method of diffusing an impurity Alumina or aluminum is arranged on, or in the vicinity of, a wafer surface into which an impurity, particularly antimony, is to be diffused, and the impurity is vapor-diffused. The impurity can be diffused in much larger quantities than in a prior art vap...	02/15/1983
4289539	Phosphorus-nitrogen-oxygen composition and method for making such composition and applications of the same A composition is described which comprises amorphous phosphorus-nitrogen-oxygen material having excellent thermal stability and low reactivity to a wide variety of chemicals. The material is manufactured using a chemical vapor deposition process. The reac...	09/15/1981
4282282	Barium aluminosilicate glasses, glass-ceramics and dopant Disclosed are thermally crystallizable glass compositions, glass ceramics and dopant hosts made therefrom, wherein said dopant hosts in thin wafer form have improved resistance to warpage, said compositions containing SiO2, Al2 O	08/04/1981
4266990	Process for diffusion of aluminum into a semiconductor A process for the diffusion of aluminum into a semiconductor is disclosed. A piece of elemental aluminum used as a diffusion source is placed on a boat of a refractory metal and heated together with a semiconductor substrate in an evacuated sealed tube fo...	05/12/1981
4239560	Open tube aluminum oxide disc diffusion A p-type region is formed in a semiconductor body by diffusion of aluminum from an aluminum oxide source in an open tube process. Both ceramic aluminum oxide and sapphire sources are described and an inert atmosphere of argon and hydrogen provides stable ...	12/16/1980
4235650	Open tube aluminum diffusion A method for forming a p-conductivity type layer in a semiconductor wafer using aluminum as a diffusion source and which can be carried out in an open diffusion tube is described. A variety of aluminum sources can be employed in an open tube. A stream of ...	11/25/1980
4233092	Utilizing lead compounds of sulphur, selenium and tellurium as dopant sources A method of growing an n-type GaAs layer on a substrate by a molecular beam epitaxy process, the dopant consisting of S, Se or Te. The layer is prepared by directing molecular beams of gallium, arsenic and PbX, where X is S, Se or Te, onto a heated substr...	11/11/1980
4214926	Method of doping IIb or VIb group elements into a boron phosphide semiconductor A method of doping IIb or VIb group elements into a phosphide semiconductor comprising the steps of adding organic compounds of IIb group elements or hydrides of VIb group elements to a gas containing boron compounds selected from the group consisting of ...	07/29/1980
4175988	Melt-formed polycrystalline ceramics and dopant hosts containing phosphorus Disclosed are new polycrystalline ceramic bodies formed from melts containing as essential components P2 O5, Ta2 O3 and Al2 O3 and sometimes containing small amounts of SiO2. Also ...	11/27/1979
4062706	Process for III-V compound epitaxial crystals utilizing inert carrier gas A method of forming and epitaxially depositing III-V compound crystals which comprises interacting two gaseous mixtures in the absence of oxidizing gas and hydrogen carrier gas, one mixture being formed by contacting a stream of a mixture of an inert carr...	12/13/1977
4033790	Solid diffusion dopants for semiconductors and method of making the same Disclosed is a solid diffusion source for the phosphorus doping of semiconductors, which comprises a substance composed of at least one kind of compound R2 O3 selected from the group consisting of Y2 O3, La...	07/05/1977
4010045	Process for production of III-V compound crystals A method of forming and epitaxially depositing III-V compound crystals which comprises interacting two gaseous mixtures in the absence of oxidizing gas and hydrogen carrier gas, one mixture being formed by contacting a stream of an inert carrier gas with ...	03/01/1977
3998668	Aluminum metaphosphate dopant sources A solid source consisting essentially of high purity aluminum metaphosphate, Al(PO3)3 is used for introducing elemental phosphorus into P-type silicon chips or wafers of semi-conductor grade. The aluminum metaphosphate functions as a...	12/21/1976
3998667	Barium aluminoborosilicate glass-ceramics for semiconductor doping Disclosed are B2 O3 -containing glass-ceramic bodies made by in situ thermal crystallization of glasses and useful as a host for diffusion doping of semiconductors by the vapor phase transport of B2 O3 to the se...	12/21/1976
3997351	Glass-ceramic dopant host for vapor phase transport of B₂ O₃ Disclosed is a method for diffusion doping of silicon and germanium semiconductors by the vapor phase transport of B2 O3 from a solid B2 O3 source to the silicon semiconductor, wherein the solid B2 O	12/14/1976

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Class 252/951 - For vapor transport