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| Number | Title | Issue Date |
| 6695903 | Dopant pastes for the production of p, p+, and n, n+ regions in semiconductors The invention relates to novel boron, phosphorus or boron-aluminium dopant pastes for the production of p, p+ and n, n+ regions in monocrystalline and polycrystalline Si wafers, and of corresponding pastes for use as masking pastes in semiconductor fabric... | 02/24/2004 |
| 5866094 | Method of feeding dopant for continuously-charged method and a dopant composition The object of the present invention affords a method of feeding dopant and a dopant composition used therein for easily preparing single crystals having a desired doping concentration during semiconductor substrate fabrication. In accordance with the pres... | 02/02/1999 |
| 5656541 | Low temperature P2 O5 oxide diffusion source The present invention relates to a solid low temperature phosphorus diffusion source that is an R2 O3 /P2 O5 compound in which the ratio of R2 O3 to P2 O5 is 1 to 5 and R i... | 08/12/1997 |
| 5350460 | High temperature phosphorus oxide diffusion source The present invention relates to a solid high temperature phosphorus diffusion source that is an R2 O3 /P2 O5 compound in which the ratio of R2 O3 to P2 O5 is 1 to 3 and R ... | 09/27/1994 |
| 5350461 | Low temperature P2 O5 oxide diffusion source The present invention relates to a solid low temperature phosphorus diffusion source that is an R2 O3 /P2 O5 compound in which the ratio of R2 O3 to P2 O5 is 1 to 5 and R i... | 09/27/1994 |
| 5182348 | Arylmethylols, their preparation and their use Compounds of the formula (1) ##STR1## wherein R1, R2, R3, R4, R5, R6, R7 and R8 have the meanings given in the description, and the other radicals have the follow... | 01/26/1993 |
| 5112775 | Method of making diamond N-type semiconductor diamond p-n junction diode using diphosphorus pentoxide and hot filament CVD method A diamond n-type semiconductor including a substrate and a phosphorus element-doped diamond thin film disposed on the substrate. The diamond thin film is deposited by vaporizing a solution comprising a liquid organic compound as the diamond material with ... | 05/12/1992 |
| 5024867 | Dopant film and methods of diffusing impurity into and manufacturing a semiconductor wafer A dopant film contains an organic binder, an inorganic binder and a compound of an impurity element for diffusion. Both surfaces of the dopant film are coated with adhesive. Releasable sheets sandwich the dopant film. The dopant film permits automated alt... | 06/18/1991 |
| 4929572 | Dopant of arsenic, method for the preparation thereof and method for doping of semiconductor therewith The dopant body of arsenic for doping of a semiconductor substrate, e.g., silicon wafer, is a sintered body of a powder mixture comprising silicon arsenide, silica and, optionally, arsenic oxide in a specified proportion. The dopant body can be easily pre... | 05/29/1990 |
| 4891331 | Method for doping silicon wafers using Al2 O3 /P2 O5 composition A doping composition and method for doping a silicon wafer with phosphorous in which the composition contains (A) a high purity Al2 O3 /P2 O5 compound having a mole ratio of P2 O5 /Al2 | 01/02/1990 |
| 4889830 | Zinc diffusion in the presence of cadmium into indium phosphide Zinc is diffused into indium phosphide in the presence of cadmium to prevent degradation of the indium phosphide surface.... | 12/26/1989 |
| 4798764 | Arsenate dopant sources and method of making the sources New arsenate compounds, compositions and solid diffusion sources for the arsenic doping of semiconductors are disclosed which comprise substances composed of a sintered arsenate that decomposes upon heating at temperatures between 500°-1400° C. to relea... | 01/17/1989 |
| 4749615 | Semiconductor dopant source Semiconductor dopant sources are prepared by mixing particles of elemental silicon and at least one dopant oxide and heating the mixture to a temperature sufficient to initiate a reduction reaction while excluding external oxygen sources from affecting th... | 06/07/1988 |
| 4734386 | Boron nitride dopant source for diffusion doping A solid body formed by the chemical vapor-phase deposition of, for example, boron nitride is used as a solid dopant source for diffusion doping of semiconductor substrates in place of conventional sintered bodies of boron nitride. By virtue of the extreme... | 03/29/1988 |
| 4588455 | Planar diffusion source Planar diffusion sources are provided wherein the source is a wafer of inert material, preferably silicon or silicon dioxide and wherein the wafer acts as a substrate for a surface coating comprising a salt, preferably the oxide, of the dopant element. An... | 05/13/1986 |
| 4571366 | Process for forming a doped oxide film and doped semiconductor A process for forming a doped oxide film and a doped semiconductor suitable for electronic applications wherein a silicon tetraalkoxide is reacted with a limited amount of water to produce a low molecular weight, soluble polyorganosiloxane. The polyorgano... | 02/18/1986 |
| 4502898 | Diffusion procedure for semiconductor compound A process is described for doping compound semiconductors using a metal fluoride (e.g., ZnF2) as the source of dopant. The anhydrous metal fluoride is put down on the surface of the compound semiconductor, capped with a suitable encapsulant and... | 03/05/1985 |
| 4490192 | Stable suspensions of boron, phosphorus, antimony and arsenic dopants Semiconductor doping compositions comprising a suspension of (a) a dopant material, in the form of finely divided spherical particles of narrow size distribution from about 0.1 D to D, where D is the diameter of the largest particle and is no more than ab... | 12/25/1984 |
| 4477964 | Method of making p-i-n photodiodes Photodiodes (10) are fabricated in a single step diffusion process which exploits the characteristic of certain acceptors to form an anomalous diffusion profile (VI) including shallow and deep fronts (VIa and b) joined by an upwardly concave segment (VIc)... | 10/23/1984 |
| 4447276 | Molecular beam epitaxy electrolytic dopant source A method of growing crystalline semiconductors such as GaAs is disclosed. The method involves epitaxial deposition from the vapor phase and provides dopant material such as sulphur in the form of a molecular beam. The molecular beam is developed by effusi... | 05/08/1984 |
| 4317680 | Diffusion source and method of preparing The present invention is directed to a diffusion source for establishing a p-type conductivity region in a semiconductor device and to a method for preparing such diffusion source. The diffusion source consists of pure silicon powder diffused with a p-typ... | 03/02/1982 |
| 4282282 | Barium aluminosilicate glasses, glass-ceramics and dopant Disclosed are thermally crystallizable glass compositions, glass ceramics and dopant hosts made therefrom, wherein said dopant hosts in thin wafer form have improved resistance to warpage, said compositions containing SiO2, Al2 O | 08/04/1981 |
| 4266990 | Process for diffusion of aluminum into a semiconductor A process for the diffusion of aluminum into a semiconductor is disclosed. A piece of elemental aluminum used as a diffusion source is placed on a boat of a refractory metal and heated together with a semiconductor substrate in an evacuated sealed tube fo... | 05/12/1981 |
| 4251285 | Diffusion of dopant from optical coating and single step formation of PN junction in silicon solar cell and coating thereon The PN juncture in a silicon chip and an oxide coating on its surface are simultaneously formed from clear solution derived from titanium alkoxides, water, alcohol, a suitable acid, and a P or N dopant compound by partial hydrolysis and polymerization. Th... | 02/17/1981 |
| 4243475 | Method for etching a phosphorus-nitrogen-oxygen coating A composition is described which comprises amorphous phosphorus-nitrogen-oxygen material having excellent thermal stability and low reactivity to a wide variety of chemicals. The material is manufactured using a chemical vapor deposition process. The reac... | 01/06/1981 |
| 4243427 | High concentration phosphoro-silica spin-on dopant A coating composition useful for forming a high concentration phosphoro-silica spin-on dopant is disclosed. The coating composition is formed by the steps of heating a solution of mono-aluminum phosphate, adding a methyl alcohol to the hot solution so as ... | 01/06/1981 |
| 4239560 | Open tube aluminum oxide disc diffusion A p-type region is formed in a semiconductor body by diffusion of aluminum from an aluminum oxide source in an open tube process. Both ceramic aluminum oxide and sapphire sources are described and an inert atmosphere of argon and hydrogen provides stable ... | 12/16/1980 |
| 4190458 | Metal-silica solution for forming films on semiconductor surfaces An improved method for forming a metal-silica coating solution having particular utility in the formation of metal-organo-silicate films on semiconductor surfaces is disclosed. The method comprises the steps of forming a mixture of a first solution having... | 02/26/1980 |
| 4175988 | Melt-formed polycrystalline ceramics and dopant hosts containing phosphorus Disclosed are new polycrystalline ceramic bodies formed from melts containing as essential components P2 O5, Ta2 O3 and Al2 O3 and sometimes containing small amounts of SiO2. Also ... | 11/27/1979 |
| 4172158 | Method of forming a phosphorus-nitrogen-oxygen film on a substrate A method is described which forms amorphous phosphorus-nitrogen-oxygen material having excellent thermal stability and low reactivity to a wide variety of chemicals. The material is manufactured using a chemical vapor deposition process. The reaction cham... | 10/23/1979 |
| 4160672 | Glass-ceramics for semiconductor doping Disclosed are B2 O3 -containing glass-ceramic bodies made by in situ thermal crystallization of glasses and useful as a host for diffusion doping of semiconductors by the vapor phase transport of B2 O3 to the se... | 07/10/1979 |
| 4152286 | Composition and method for forming a doped oxide film A boron doped, silicon oxide-forming film is produced on a semiconductor wafer by coating the wafer with a solution of a silicon compound and a boron compound, in a blend of two polar organic solvents, one of which has a low boiling point, and the other h... | 05/01/1979 |
| 4129463 | Polycrystalline silicon semiconducting material by nuclear transmutation doping A NTD semiconductor material comprising polycrystalline silicon having a mean grain size less than 1000 microns and containing phosphorus dispersed uniformly throughout the silicon rather than at the grain boundaries.... | 12/12/1978 |
| 4053551 | Methods of recovering terbium oxide from a glass A method for recovering Tb4 O7 from a glass containing terbium oxide is disclosed, the method including the steps of: I. fusing the glass containing terbium oxide with NaOH to provide a solid fusion product; Ii. slurrying the fusion produ... | 10/11/1977 |
| 4033790 | Solid diffusion dopants for semiconductors and method of making the same Disclosed is a solid diffusion source for the phosphorus doping of semiconductors, which comprises a substance composed of at least one kind of compound R2 O3 selected from the group consisting of Y2 O3, La... | 07/05/1977 |
| 4025464 | Composition for diffusing phosphorus A phosphorus nitride-silicon oxide composition having good thermal stability and diffusion characteristics for use as a diffusant source of n-type impurities for a semi-conductor device.... | 05/24/1977 |
| 3998668 | Aluminum metaphosphate dopant sources A solid source consisting essentially of high purity aluminum metaphosphate, Al(PO3)3 is used for introducing elemental phosphorus into P-type silicon chips or wafers of semi-conductor grade. The aluminum metaphosphate functions as a... | 12/21/1976 |
| 3998667 | Barium aluminoborosilicate glass-ceramics for semiconductor doping Disclosed are B2 O3 -containing glass-ceramic bodies made by in situ thermal crystallization of glasses and useful as a host for diffusion doping of semiconductors by the vapor phase transport of B2 O3 to the se... | 12/21/1976 |
| 3994755 | Liquid phase epitaxial process for growing semi-insulating GaAs layers Disclosed is a process for fabricating chromium-doped semi-insulating epitaxial layers of gallium arsenide which includes contacting a gallium arsenide substrate with a chromium-doped saturated solution of gallium arsenide in gallium and maintaining the s... | 11/30/1976 |
| 3975308 | Preparation of pyrophosphates A method for the preparation of pyrophosphates such as SiP2 O7 is disclosed, whereby the undesired formation of by-products such as Si2 P2 O9 is minimized. Such pyrophosphates are particularly suitabl... | 08/17/1976 |
