Did You Know...
...that to encourage use of his new invention, the shopping cart, market owner Sylvan Goldman hired fake shoppers to push the carts around his store in Oklahoma City? Seems his customers were reluctant to give up their hand-carried baskets.
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| Number | Title | Issue Date |
| 6627100 | Current/voltage non-linear resistor and sintered body therefor A current/voltage non-linear resistor comprises a sintered body having a main component of ZnO, an electrode applied to a surface of the sintered body and an insulation material applied to another surface of the sintered body. The main component containin... | 09/30/2003 |
| 6126740 | Solution synthesis of mixed-metal chalcogenide nanoparticles and spray deposition of precursor films A colloidal suspension comprising metal chalcogenide nanoparticles and a volatile capping agent. The colloidal suspension is made by reacting a metal salt with a chalcogenide salt in an organic solvent to precipitate a metal chalcogenide, recovering the m... | 10/03/2000 |
| 5820669 | (Zinc,cadmium) aluminate-gallate-containing paints A paint is a liquid or solid mixture of a plurality of particles and an inorganic binder such as a silicate. The particles have a composition AxAl(1-x)Ga!2 O4 (δIn), wherein A is zinc or cadmium, the value of x is from 0 to 1, and... | 10/13/1998 |
| 5523022 | Semiconductor compound Novel compound semiconductors are of the general formula, X5 YZ4, wherein X is a member selected from the group consisting of Cu, Ag and mixtures thereof, Y is a member selected from the group consisting of Al Ga, Tl and mixtures the... | 06/04/1996 |
| 5490953 | Semiconductor compound Novel compound semiconductors are of the general formula, X5 YZ4, wherein X is a member selected from the group consisting of Cu, Ag and mixtures thereof, Y is a member selected from the group consisting of Al, Ga, Tl and mixtures th... | 02/13/1996 |
| 5427716 | Compound semiconductors and semiconductor light-emitting devices using the same Novel compound semiconductors are of the general formula, X5 YZ4, wherein X is a member selected from the group consisting of Cu, Ag and mixtures thereof, Y is a member selected from the group consisting of Al, Ga, Tl and mixtures thereof... | 06/27/1995 |
| 5393444 | Piezoelectric semiconductor A piezoelectric semiconductor is a single crystal composed mainly of ZnO having properties such as electrical conductivity of 10-11 ~10-3 1/Ω.multidot.cm suitable for use as an acoustoelectric element, by adding a given amount of H | 02/28/1995 |
| 5094693 | Doped zinc oxide-based pigment There is disclosed a doped zinc oxide pigment composition and method of preparing said composition, wherein the dopant is uniformly dispersed in the zinc oxide matrix in the form of a solid solution such that the mechanism by which undoped zinc oxide abso... | 03/10/1992 |
| 4939043 | Optically transparent electrically conductive semiconductor windows A semiconductor window which is transparent to light in the infrared range and which has good electrical conductivity is formed of a substrate material having a semiconductor coating having a dopant included therein. The coating is diffused, grown or depo... | 07/03/1990 |
| 4911905 | Method of forming stoichiometric II-VI compounds of high purity The disclosure relates to a method of purifying cadmium and tellurium and forming pure, stoichiometric cadmium telluride therefrom as well as the apparatus for making such cadmium telluride. The cadmium and tellurium are purified by heating each separatel... | 03/27/1990 |
| 4743310 | HGCDTE epitaxially grown on crystalline support A layer of HgCdTe (15) is epitaxially grown on a crystalline support (10). A single crystal CdTe substrate (5) is first epitaxially grown to a thickness of between 1 micron and 5 microns onto the support (10). Then a HgTe source (3) is spaced from the CdT... | 05/10/1988 |
| 4650539 | Manufacture of cadmium mercury telluride A layer of Cdx Hg1-x Te is grown on the surface of a substrate by decomposing alkyls of cadmium and telluride in a mercury atmosphere. The substrate is placed in a vessel containing a mercury bath with the vessel and bath at a suitab... | 03/17/1987 |
| 4634493 | Method for making semiconductor crystals A planar solid-state recrystallization process for growing mercury cadmium telluride (MCT) crystals suitable for semiconductor applications, in which molten MCT material is solidified in a horizontal sealed ampoule having a substantial portion of its lowe... | 01/06/1987 |
| 4584054 | Solids refining process A process and an apparatus provide a purified material by employing a rate of condensation of the material which is substantially greater than the rate of solidification of the material. Tellurium and cadmium are effectively purified by the process.... | 04/22/1986 |
| 4529027 | Method of preparing a plurality of castings having a predetermined composition A method is set forth for simultaneously preparing a plurality of castings of a solution of an element, or compound, in a solvent, which solvent may also be an element and/or a compound. The solution is saturated at a temperature Ts. A problem ... | 07/16/1985 |
| 4526632 | Method of fabricating a semiconductor pn junction A method of forming a pn junction with a Group IIB-VIB compound semiconductor containing Zn is disclosed, the method including preparing an n type semiconductor region either locally or entirely in a Group IIB-VIB compound semiconductor crystal obtained b... | 07/02/1985 |
| 4487640 | Method for the preparation of epitaxial films of mercury cadmium telluride A method for depositing a (Hg,Cd)Te film onto a CdTe substrate by using two separate vaporizeable sources of reactant materials each maintained at separate and distinct temperatures followed by the step of mixing both of each sources with a hydrogen halid... | 12/11/1984 |
| 4450086 | Production of cadmium sulfide compositions having unusual magnetic and electrical properties Process for preparing cadmium sulfide compositions which are in a metasta state possessing greatly increased electrical conductivity and magnetic properties. The process comprises pressure quenching a cadmium sulfide composition containing between about ... | 05/22/1984 |
| 4435224 | Process for preparing homogeneous layers of composition Hg1-x Cdx Process for obtaining a homogeneous layer of composition Hg1-x Cdx Te, comprising the steps of: subjecting a wafer formed by a layer of Hg1-x.sbsb.o Cdx.sbsb.o Te deposited by epitaxial growth on a CdTe substrate, x | 03/06/1984 |
| 4365155 | Scintillator with ZnWO4 single crystal A scintillator formed of a ZnWO4 single crystal having an absorption coefficient less than or equal to 1.8 cm-1 for the light having a wavelength of 520 nm is disclosed which has a luminescence wavelength of 480 nm and therefore can ... | 12/21/1982 |
| 4344476 | Supercool method for producing single crystal mercury cadmium telluride A process for producing single crystal Hg1-x Cdx Te is disclosed. An ingot of Hg1-x cdx Te is prepared from a stoichiometric mixture of mercury, cadmium and tellurium by the supercooling of a heated mixture ther... | 08/17/1982 |
| 4282045 | Pb1-W CdW S Epitaxial thin film A variable temperature method for the preparation of single and multiple epitaxial layers of single-phase (e.g., face-centered cubic), ternary lead chalcogenide alloys (e.g., lead cadmium sulfide, [Pb1-w Cdw ]a [S]1-a... | 08/04/1981 |
| 4264914 | Wide-band-gap, alkaline-earth-oxide semiconductor and devices utilizing same This invention relates to novel and comparatively inexpensive semiconductor devices utilizing semiconducting alkaline-earth-oxide crystals doped with alkali metal. The semiconducting crystals are produced by a simple and relatively inexpensive process. As... | 04/28/1981 |
| 4254093 | Solar energy grade cadmium sulfide A composition consisting essentially of discrete particles of cadmium sulfide that are relatively free of anionic, cationic and volatile impurities has an average particle size of from about 8 to about 25 micrometers and a bulk density of from about 1.7 t... | 03/03/1981 |
| 4181627 | High fluorescent efficiency zinc oxide crystals and method of making same Single crystals of zinc oxide which efficiently fluoresce in the near UV due to the radiative recombination of free excitons. Increased efficiency is attributed to treatment of the crystals to optimize the concentration of free excitons by providing donor... | 01/01/1980 |
| 4141777 | Method of preparing doped single crystals of cadmium telluride A method of preparing doped single crystals of cadmium telluride in a single ampoule accommodating a graphite container provided with an opening. Cadmium and a dopant are directly placed in the ampoule, and tellurium is placed in the graphite container. T... | 02/27/1979 |
| 4123295 | Mercury chalcogenide contact for semiconductor devices An improved contact material for use in the fabrication of semiconductor devices is provided. This material comprises one of the mercury chalcogenides. The application of this material to a nondegenerate semiconductor may be made by the process of evapora... | 10/31/1978 |
| 4116725 | Heat treatment of cadmium mercury telluride and product A method of improving certain characteristics of cadmium mercury telluride single crystal material by heat treating the single crystal material in the presence of both tellurium and mercury.... | 09/26/1978 |
| 4105472 | Preparation of silicon doped mercury cadmium telluride Mercury cadmium telluride is described having a quantity of a silicon dispersed therein in an amount to measurably increase the donor concentration of the mercury cadmium telluride. Silicon has been found to substitute for metal, either mercury or cadmium... | 08/08/1978 |
| 4105477 | Doping of (Hg,Cd)Te with a Group VA element Mercury cadmium telluride having a quantity of an acceptor material selected from Group VA of the Periodic Table, consisting of nitrogen, phosphorus, arsenic and antimony and bismuth dispersed therein, preferably in an amount sufficient to measurably incr... | 08/08/1978 |
| 4105478 | Doping HgCdTe with Li Mercury cadmium telluride carrier concentration can be adjusted by having a quantity of lithium dispersed therein in an amount sufficient to measurably increase the acceptor concentration of the semiconductor. Methods of forming the acceptor doped mercury... | 08/08/1978 |
| 4105479 | Preparation of halogen doped mercury cadmium telluride Mercury cadmium telluride is disclosed having a quantity of a halogen donor material preferably selected from the group consisting of bromine and iodine dispersed therein in an amount sufficient to measurably increase the donor concentration. Also disclos... | 08/08/1978 |
| 4087293 | Silicon as donor dopant in Hg1-x Cdx Te Mercury cadmium telluride is described having a quantity of a silicon dispersed therein in an amount to measurably increase the donor concentration of the mercury cadmium telluride. Silicon has been found to substitute for metal, either mercury or cadmium... | 05/02/1978 |
| 4087294 | Lithium doped mercury cadmium telluride Mercury cadmium telluride carrier concentration can be adjusted by having a quantity of lithium dispersed therein in an amount sufficient to measurably increase the acceptor concentration of the semiconductor. Methods of forming the acceptor doped mercury... | 05/02/1978 |
| 4086106 | Halogen-doped Hg,Cd,Te Mercury cadmium telluride is disclosed having a quantity of a halogen donor material preferably selected from the group consisting of bromine and iodine dispersed therein in an amount sufficient to measurably increase the donor concentration. Also disclos... | 04/25/1978 |
| 4035819 | Method of making a zinc sulphide ceramic body and a zinc sulphide ceramic body made thereby A method of making a zinc sulphide ceramic body having a low electrical resistance characterized by sulphurizing a starting oxide material consisting essentially of zinc oxide and from 0.01 atomic % to 6.0 atomic % of at least one oxide of a metal selecte... | 07/12/1977 |
| 4011074 | Process for preparing a homogeneous alloy A process for making a homogeneous solidified alloy having at least one component with a comparatively high vapor pressure, in which the alloy components are enclosed in the form of a homogeneous melt in a sealed ampoule and cooled therein, the volume fre... | 03/08/1977 |
| 3972742 | Deep power diode A semiconductor diode comprises a first body of semiconductor material having a selected resistivity and a first type conductivity and a region of second type conductivity and a selected resistivity. The second body consists of recrystallized semiconducto... | 08/03/1976 |
| 3960618 | Epitaxial growth process for compound semiconductor crystals in liquid phase In an epitaxial growth process for compound semiconductor crystals in a liquid phase, a substrate crystal is brought into contact with an etching solution containing as solute a predetermined amount of at least one constituent of the substrate crystal, wh... | 06/01/1976 |
| 3956023 | Process for making a deep power diode by thermal migration of dopant A semiconductor diode comprises a first body of semiconductor material having a selected resistivity and a first type conductivity and a region of second type conductivity and a selected resistivity. The second body consists of recrystallized semiconducto... | 05/11/1976 |
