Superstar singer Michael Jackson co-patented a "Method and means for creating anti-gravity illusion" in 1993.
Make the Most of Our Site
See this month's Top Inventors and Most Cited Patents.
Stay on top of the latest innovations by subscribing to an RSS feed.
Registered users: Manage your profile.
| Number | Title | Issue Date |
| 5523022 | Semiconductor compound Novel compound semiconductors are of the general formula, X5 YZ4, wherein X is a member selected from the group consisting of Cu, Ag and mixtures thereof, Y is a member selected from the group consisting of Al Ga, Tl and mixtures the... | 06/04/1996 |
| 5490953 | Semiconductor compound Novel compound semiconductors are of the general formula, X5 YZ4, wherein X is a member selected from the group consisting of Cu, Ag and mixtures thereof, Y is a member selected from the group consisting of Al, Ga, Tl and mixtures th... | 02/13/1996 |
| 5427716 | Compound semiconductors and semiconductor light-emitting devices using the same Novel compound semiconductors are of the general formula, X5 YZ4, wherein X is a member selected from the group consisting of Cu, Ag and mixtures thereof, Y is a member selected from the group consisting of Al, Ga, Tl and mixtures thereof... | 06/27/1995 |
| 4928199 | Circuit protection device A circuit protection device for protecting electrical circuits against voltage transients comprises a chip package which includes a threshold switch device formed from an amorphous composition.... | 05/22/1990 |
| 4924340 | Circuit protection device A circuit protection device for protecting an electrical circuit from a voltage transient, e.g. a voltage transient caused by an electrostatic discharge, lightning or a nuclear electromagnetic pulse, comprises a threshold switching element formed from an ... | 05/08/1990 |
| 4890182 | Circuit protection device A circuit protection device for protecting an electrical circuit from a voltage transient, e.g. a voltage transient caused by an electrostatic discharge, lightning or a nuclear electromagnetic pulse, comprises a threshold switching element formed from an ... | 12/26/1989 |
| 4463279 | Doped photoconductive film comprising selenium and tellurium A photoconductive film comprising a photo-conductive layer which is mainly made of selenium and a region added with tellurium in a direction of the thickness of the layer, wherein at least either one of a portion in a direction of hole flow of said region... | 07/31/1984 |
| 4066481 | Metalorganic chemical vapor deposition of IVA-IVA compounds and composite A composite comprising a monocrystalline substrate and one or more layers or films of monocrystalline IVA-VIA compounds and/or alloys formed thereon by a chemical vapor deposition process. The composite is formed at a preferred temperature range of approx... | 01/03/1978 |
| 3994791 | Process for preparation of solid phase dispersion of photoconductive materials Process for preparation of a solid phase dispersion of photoconductive materials in an insulating binder matrix from a film forming insulating polymeric resin and an organo-selenium compound capable of undergoing selective decomposition in response to an ... | 11/30/1976 |
| 3979271 | Deposition of solid semiconductor compositions and novel semiconductor materials Solid layer semiconductor compositions are deposited by the simultaneous sputtering from a sputter target and electrically discharge a reacting gas preferably by application of an RF potential. Preferably, the method is used to make solid solution layers ... | 09/07/1976 |
| 3957693 | Process for producing selenium homogeneously doped with tellurium A process for producing selenium homogeneously doped with a metal. The process comprises mixing the metal with selenium, melting the selenium and mixing the resulting melt in the absence or substantial absence of oxygen or with the extraction of any oxyge... | 05/18/1976 |