Bizarre Patents
Crispy Chip Sandwich and Process of Producing a Sandwich Product
A food product comprising a multilayer cookie or snack having outer layers formed from a crispy type edible food product such as a potato chip or corn chip, etc. with an intermediate marshmallow layer being in contact with the inner surface of each crispy chip and one or more filler substances.
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| Number | Title | Issue Date |
| 7442320 | Nanostructured materials and photovoltaic devices including nanostructured materials Nanostructured materials and photovoltaic devices including nanostructured materials are described. In one embodiment, a nanostructured material includes: (a) a first nano-network formed from a first set of nanoparticles; and (b) a second nano-network coupled to the... | 10/28/2008 |
| 6607676 | Preparation of carbonaceous semiconductor material Carbonaceous semiconductor material is prepared by heating an organic polymer to carbonize the polymer and incorporating into the carbonized polymer one or more hetero atoms such as those of Group II, III, IV, V and VI of the Periodic Table. Carbonaceous ... | 08/19/2003 |
| 6586867 | Glass spacer of particular composition and electron-beam emitting display device A glass spacer for an electron-beam emitting display device is composed of non alkaline glass having almost the same linear expansion coefficient as that of soda-lime-silica glass. The glass includes SiO2 with 10 to 35 percent by mass, RO, in w... | 07/01/2003 |
| 6540944 | Current limiting device with conductive composite material and method of manufacturing the conductive composite material and the current limiting device A current limiting device comprises at least two electrodes; an electrically conducting composite material between the electrodes; interfaces between the electrodes and electrically conducting composite material; an inhomogeneous distribution of resistanc... | 04/01/2003 |
| 6103138 | Silicon-system thin film, photovoltaic device, method for forming silicon-system thin film, and method for producing photovoltaic device This invention provides a silicon-system thin film, characterized by containing at least 1 ppm of phosphorus atoms and diffraction intensity at the (220) plane with X ray or electron beams of at least 30% of total diffraction intensity, photovoltaic devic... | 08/15/2000 |
| 6028264 | Semiconductor having low concentration of carbon Non-single-crystalline semiconductor material or device containing carbon impurity in a concentration less than 4×1018 atoms/cm3.... | 02/22/2000 |
| 5523022 | Semiconductor compound Novel compound semiconductors are of the general formula, X5 YZ4, wherein X is a member selected from the group consisting of Cu, Ag and mixtures thereof, Y is a member selected from the group consisting of Al Ga, Tl and mixtures the... | 06/04/1996 |
| 5490953 | Semiconductor compound Novel compound semiconductors are of the general formula, X5 YZ4, wherein X is a member selected from the group consisting of Cu, Ag and mixtures thereof, Y is a member selected from the group consisting of Al, Ga, Tl and mixtures th... | 02/13/1996 |
| 5431743 | Silicon for solar cells, a process for the preparation thereof, and the use thereof A highly efficient material for producing electrical currents from sunlight and thus useful in solar cells is silicon with a total oxygen and carbon content of from 3 to 200 ppm and wherein the ratio of oxygen:carbon, as determined by infra-red analysis, ... | 07/11/1995 |
| 5427716 | Compound semiconductors and semiconductor light-emitting devices using the same Novel compound semiconductors are of the general formula, X5 YZ4, wherein X is a member selected from the group consisting of Cu, Ag and mixtures thereof, Y is a member selected from the group consisting of Al, Ga, Tl and mixtures thereof... | 06/27/1995 |
| 5296048 | Class of magnetic materials for solid state devices A new semiconductor material or compound and method for its manufacture is disclosed. The material or compound has the Formula III-V or IV which includes as part of the compound, a transition element or a rare earth element present in an amount sufficient... | 03/22/1994 |
| 5017308 | Silicon thin film and method of producing the same A silicon thin film is composed of primarily silicon atoms, 0 to 8 atm % hydrogen, at least one element selected from the group including fluorine, chlorine, bromine and iodine, and an impurity element, wherein about 80 to 100% of microcrystalline grains ... | 05/21/1991 |
| 5007979 | Method of fabricating GaAs single crystal A method of fabricating an undoped or impurity-doped semi-insulating GaAs single crystal with the use of a silica boat comprises the steps of making a melt of GaAs in the silica boat except for a seed crystal, doping the melt with oxygen, maintaining the ... | 04/16/1991 |
| 4696716 | Apparatus for doping semiconductor rods with solid dopants Semiconductor rods are doped in a crucible-free, float-zone enclosure, by the introduction of dopant pellets into the float-zone. The dopant pellets are located in a hopper (7), mounted on the inside of the float-zone enclosure. The introduction of indivi... | 09/29/1987 |
| 4631234 | Germanium hardened silicon substrate Disclosed is a substitutionally strengthened silicon semiconductor material. A high concentration of germanium atoms is added to a silicon melt to thereby substitutionally displace various silicon atoms throughout the crystalline structure. The germanium ... | 12/23/1986 |
| 4620968 | Monoclinic phosphorus formed from vapor in the presence of an alkali metal Monoclinic phosphorus is produced in a single source vapor transport apparatus comprising a sealed evacuated ampoule containing a mixture or compound of phosphorus and an alkali metal with the phosphorus to alkali metal ratio being 11 or greater. The char... | 11/04/1986 |
| 4618396 | GaAs single crystal and preparation thereof A GaAs single crystal is disclosed containing at least one impurity selected from the group consisting of In, Al, C and S, in which fluctuation of the concentration of the impurity is less that 20% throughout the crystal from which wafers having uniform c... | 10/21/1986 |
| 4492810 | Optimized doped and band gap adjusted photoresponsive amorphous alloys and devices The production of improved photoresponsive amorphous alloys and devices, such as photovoltaic, photoreceptive devices and the like. The alloys and devices have improved wavelength threshold characteristics made possible by introducing one or more band gap... | 01/08/1985 |
| 4461783 | Non-single-crystalline semiconductor layer on a substrate and method of making same A non-single-crystalline semiconductor layer on a substrate and a method of making same. The non-single-crystalline compound semiconductor layer, which consists principally of silicon and tin and is expressed by Six Sn1-x (0 | 07/24/1984 |
| 4392011 | Solar cell structure incorporating a novel single crystal silicon material A novel hydrogen rich single crystal silicon material having a band gap energy greater than 1.1 eV can be fabricated by forming an amorphous region of graded crystallinity in a body of single crystalline silicon and thereafter contacting the region with a... | 07/05/1983 |
| 4377423 | Liquid metal inclusion migration by means of an electrical potential gradient Liquid metal inclusions are migrated in a host body of semiconductor material by means of an electrical potential gradient to produce regions of recrystallized single crystal semiconductor material in the host body. The resistivities of the regions and th... | 03/22/1983 |
| 4249957 | Copper doped polycrystalline silicon solar cell Photovoltaic cells having improved performance are fabricated from polycrystalline silicon containing copper segregated at the grain boundaries.... | 02/10/1981 |
| 4237151 | Thermal decomposition of silane to form hydrogenated amorphous Si film This invention relates to hydrogenated amorphous silicon produced by thermally decomposing silano (SiH4) or other gases comprising H and Si, at elevated temperatures of about 1700°-2300° C., and preferably in a vacuum of about 10-8... | 12/02/1980 |
| 4237150 | Method of producing hydrogenated amorphous silicon film This invention relates to hydrogenated amorphous silicon produced by thermally decomposing silane (SiH4) or other gases comprising H and Si, from a tungsten or carbon foil heated to a temperature of about 1400°-1600° C., in a vacuum of about ... | 12/02/1980 |
| 4201622 | Method of mitigating titanium impurities effects in p-type silicon material for solar cells Microstructural evaluation tests performed on Cu-doped, Ti-doped and Cu/Ti doped p-type silicon single crystal wafers, before and after the solar cell fabrication, and evaluation of both dark forward and reverse I-V characteristic records for the solar ce... | 05/06/1980 |
| 4177473 | Amorphous semiconductor member and method of making the same An amorphous semiconductor member includes an amorphous semiconductor material which is formed in a solid amorphous host matrix having structural configurations which have local rather than long-range order and electronic configurations which have an ener... | 12/04/1979 |
| 4177474 | High temperature amorphous semiconductor member and method of making the same An amorphous semiconductor member which is capable of withstanding high temperatures and of having good toughness characteristics comprises an amorphous semiconductor material including a composition of a plurality elements, at least one of which is a low... | 12/04/1979 |
| 4170496 | Beveled wafer for thermal gradient zone melting utilizing a beveled wafer edge A body of semiconductor material to be processed by thermal gradient zone melting (TGZM) has an outer side peripheral surface beveled at a predetermined included angle with the bottom surface of the body in order that the radiant heat impinging on... | 10/09/1979 |
| 4170490 | Process for thermal gradient zone melting utilizing a beveled wafer edge When a body of semiconductor material is to be processed by thermal gradient zone melting, the outer peripheral side surface of the body is beveled to form an included angle with the bottom surface of the body. The measure of the angle is ... | 10/09/1979 |
| 4168992 | Process for thermal gradient zone melting utilizing a beveled wafer and a beveled guard ring A wafer of semiconductor material processed by thermal gradient zone melting is supported by a beveled inner peripheral surface defining an aperture in a guard ring to minimize the distortion of the thermal gradient at the outer peripheral edge surface of... | 09/25/1979 |
| 4129463 | Polycrystalline silicon semiconducting material by nuclear transmutation doping A NTD semiconductor material comprising polycrystalline silicon having a mean grain size less than 1000 microns and containing phosphorus dispersed uniformly throughout the silicon rather than at the grain boundaries.... | 12/12/1978 |
| 4105472 | Preparation of silicon doped mercury cadmium telluride Mercury cadmium telluride is described having a quantity of a silicon dispersed therein in an amount to measurably increase the donor concentration of the mercury cadmium telluride. Silicon has been found to substitute for metal, either mercury or cadmium... | 08/08/1978 |
| 4102767 | Arc heater method for the production of single crystal silicon A method for the production of single crystal silicon characterized by the steps of feeding into an arc heater a quantity of uncontaminated silicon halide to react with hydrogen or a metal reductant, such as sodium, to produce reaction products including ... | 07/25/1978 |
| 4102766 | Process for doping high purity silicon in an arc heater A method for doping solar grade silicon characterized by the steps of feeding into an arc heated gas stream a quantity of a metal reductant such as an alkali metal or an alkaline-earth metal and also feeding into the stream a quantity of a silicon halide ... | 07/25/1978 |
| 4092209 | Silicon implanted and bombarded with phosphorus ions A composition of matter produced by a process wherein silicon is bombarded by phosphorus ions and phosphorus ions are implanted therein. A method for rendering silicon substantially unetchable in a potassium hydroxide etchant by implanting phosphorus in t... | 05/30/1978 |
| 4081293 | Uniform thermomigration utilizing sample movement The geometric configuration of a molten zone migrating through a solid body of semiconductor material during thermal gradient zone melting is maintained by noncentro-symmetric rotation of the solid body about an axis displaced therefrom, by centro-symmetr... | 03/28/1978 |
| 4035199 | Process for thermal gradient zone melting utilizing a guard ring radiation coating The practice of thermal gradient zone melting in processing a body of semiconductor material is enhanced by providing a radiation coating on selected surface areas of the body.... | 07/12/1977 |
| 4032364 | Deep diode silicon controlled rectifier A semiconductor controlled rectifier has a lamellar body of semiconductor material of at least one group of four alternate first and second regions of opposite type conductivity. The second regions are made from recrystallized semiconductor material of th... | 06/28/1977 |
| 4028151 | Method of impregnating a semiconductor with a diffusant and article so formed Crystalline silicon wafers have an electrical junction formed at a surface thereof by impregnating the surface with a diffusant, such as phosphorus, in an atmosphere that includes significant quantities of helium.... | 06/07/1977 |
| 4021269 | Post diffusion after temperature gradient zone melting Disclosed is a technique useful in the manufacture of semiconductor devices. When a semiconductor device is manufactured by the temperature gradient zone melting process, it is subjected to a short diffusion cycle following thermomigration. The cycle smoo... | 05/03/1977 |
