Class 252/62.3BT - Containing Group IV element and oxygen; e.g., barium, titanium III oxide

Subclass of Class 252 - Compositions
No. of patents: 75
Last issue date: 09/18/2007

Number	Title	Issue Date
7270765	Composition for forming dielectric layer, MIM capacitor and process for its production To provide a composition for forming a dielectric layer excellent in dielectric constant and withstand voltage properties, a MIM capacitor and a process for its production. A composition for forming a dielectric layer, which comprises fine particles of perovs...	09/18/2007
7232527	Sintered body for thermistor devices, thermistor device and temperature sensor A sintered body for thermistor device comprising: at least one element selected from elements of group 3 in a periodic table proviso that La is excluded; at least one element selected from elements of group 2 in a periodic table; Mn; Al; and oxygen, and being substa...	06/19/2007
6641794	Method for producing barium titanate based powders by oxalate process The method is carried out in the following manner: An aqueous mixture solution containing barium chloride and titanium chloride is added into an aqueous oxalic acid solution, so that barium titanyl oxalate would be precipitated. Then the precipitates are ...	11/04/2003
6627120	Conductive paste and laminated ceramic electronic component In order to achieve miniaturization and an increase in the capacitance of a monolithic ceramic capacitor, a conductive paste suitable for forming an internal conductor film is provided, the layer thickness of the internal conductor film being decreased wi...	09/30/2003
6589488	Molding for supporting a monolith in a catalytic converter An immobilizing structure for use in immobilizing a ceramic monolith in a catalytic converter employs a molding which comprises finely divided metal oxide and fibers which do not represent a health risk, has a density of 100-240 kg/m3, and has ...	07/08/2003
6572793	Method of producing ceramic composition and method of producing electronic device A method of producing an electronic device including a dielectric layer includes a dielectric ceramic composition containing a main component expressed by a formula of {(Sr1-x Cax)O}m.(Ti1-y Zry)O	06/03/2003
6447888	Ceramic wiring board A ceramic wiring board provided with an insulating layer of a high dielectric constant formed of a ceramic sintered product having a high dielectric constants wherein the ceramic sintered product contains a crystal phase of lanthanum titanate and a glass ...	09/10/2002
6222262	Lanthanum cobalt oxide semiconductor ceramic and related devices A semiconductor ceramic device includes a semiconductor ceramic sintered body and external electrodes. The semiconductor ceramic sintered body contains a lanthanum cobalt type oxide major component, about 0.1 to 10 mol % on an element conversion basis of ...	04/24/2001
6162752	Barium titanate powder, semiconducting ceramic, and semiconducting ceramic electronic element The present invention provides barium titanate powder having a withstanding voltage of 800 V/mm or more and a specific resistance at room temperature of 100 Ω.multidot.cm or less, the specific resistance at room temperature undergoing substantially no ti...	12/19/2000
6126743	Process for producing dielectrics and fine single crystal powders and thin film capacitor Disclosed is a process for producing dielectrics which satisfy the formula of: WXMO3 --(l--w)(XOy --aGOz) wherein the symbols are as defined in the specification, which comprises mixing an oxide of X, an oxide of M and an oxide...	10/03/2000
6059553	Integrated circuit dielectrics An integrated circuit with an intermetal level dielectric (IMD) including an organic-silica hybrid (110) and located between metal lines (104)....	05/09/2000
5965056	Radio wave absorbent A radio wave absorbent comprises an Ni--Cu--Zn base ferrite having a major composition comprising 49 to less than 50 mol % of Fe2 O3, 32 to 35 mol % of ZnO, 3 to 9 mol % of CuO and 9 to 14 mol % of NiO. The radio wave absorbent furth...	10/12/1999
5708233	Thermoelectric semiconductor material A thermoelectric semiconductor material is used for thermoelectric conversion in a thermoelectric conversion device. The material comprises a double oxide having one of a normal spinel crystal structure and an inverse spinel crystal structure, the double ...	01/13/1998
5578284	Silicon single crystal having eliminated dislocation in its neck A silicon single crystal prepared by the Czochralski method including a neck having an upper portion, an intermediate portion, and a lower portion. The upper portion contains dislocations. The intermediate portion is between the upper and lower portions. ...	11/26/1996
5555154	CVD Raw Material for oxide-system dielectric thin film and capacitor produced by CVD method using the CVD raw material The multi-source raw material are dissolved in the tetra-hydrofuran, in a liquid state and evaporated simultaneously and stably transported to the reactor, thereby the dielectric thin film used for capacitor having a good performance is formed with a good...	09/10/1996
5470398	Dielectric thin film and method of manufacturing same A dielectric film is provided which may be used as an insulating layer of a capacitor of a semiconductor DRAM. The dielectric film is comprised of three elements, namely, titanium, silicon and oxygen. The dielectric film has a high dielectric constant and...	11/28/1995
5454861	Composition for forming protective layer of dielectric material There is disclosed a composition for forming a protective layer of a dielectric material which comprises: (A) alkaline earth metal oxide particles; and (B) one or more organic compounds containing a metal element and represented by the formula (I): M1	10/03/1995
5439742	Electrical insulating vinyl halide resin compositions Electrical insulating compositions of vinyl halide resins (PVC) are formulated to contain a polymeric metal aromatic polycarboxylate as an electrical insulating additive. For example, polymeric calcium terephthalate is used in minor amounts of about 0.2 t...	08/08/1995
5282993	Light-stable semiconductor material based on amorphous germanium and a method for its production An amorphous semiconductor material which does not age under the action of light is particularly suitable for red-sensitive photovoltaic components and is highly photosensitive. The amorphous semiconductor material is germanium based, particularly a silic...	02/01/1994
5105333	Temperature compensating ceramic dielectric A temperature compensating ceramic dielectric of the present invention contains compositions consisting of 2.0 to 14.0 mole % of barium oxide, 51.0 to 63.5 mole % of titanium oxide and 22.5 to 47.0 mole % of neodymium oxide as NdO3/2. Among the...	04/14/1992
5086021	Dielectric composition A dielectric ceramic powder composition for forming multilayer ceramic devices having thin dielectric layers with low porosity and having a dissipation factor which meets or exceeds X7R specifications, and consisting essentially of an admixture of a major...	02/04/1992
5082806	Semi-conducting ceramic A semi-conducting ceramic is disclosed. The ceramic consists essentially of from 50 percent to 72 percent of silicon carbide particles, from 25 percent to 47 percent of silicon nitride particles and a modified silicon oxynitride glass bonded to the silico...	01/21/1992
5077632	Ceramic, circuit substrate and electronic circuit substrate by use thereof and process for producing ceramic The present invention provides a ceramic having a first region comprising a dielectric porcelain having an insulating layer at the crystal grain boundary of a semiconductor porcelain containing 0.50 to 5.30 mol parts of MnO2 and 0.02 to 0.40 mo...	12/31/1991
5065274	Ceramic body of a dielectric material on the basis of barium titanate A ceramic body of a dielectric material on the basis of barium titanate comprises 0.2 to 0.5 atom % of antimony and/or cerium as the donor material. The grain size of the dielectric material is less than 2 μm. The dielectric constant of the material exce...	11/12/1991
5065275	Multilayer substrate with inner capacitors A multilayer substrate with inner capacitors comprising a dielectric layer sandwiched between upper and lower insulating layers, a couple of printed electrodes in desired patterns within the thickness of the dielectric layer so as to form each capacitor a...	11/12/1991
5029042	Dielectric ceramic with high K, low DF and flat TC The present invention provides ceramic compositions for preparing multi-layer capacitors, having high dielectric constants between about 4900 and 5400, dissipation factors below about 2.0%, high insulation resistance capacitance products and stable temper...	07/02/1991
5028346	Semi-conducting ceramic A semi-conducting ceramic is disclosed. The ceramic consists essentially of from 50 percent to 72 percent of silicon carbide particles, from 25 percent to 47 percent of silicon nitride particles and a modified silicon oxynitride glass bonded to the silico...	07/02/1991
5028568	Niobium-doped titanium membranes A metal oxide particulate membrane is made more electrically conductive, and thus more suitable for electrochemical cells by the incorporation into the membrane of a dopant element. The dopant is dissolved in an alcohol and then incorporated in the sol-ge...	07/02/1991
5010443	Capacitor with fine grained BaTiO₃ body and method for making Disc and multilayer ceramic capacitors having a fine grained barium titanate body having been sintered at less than 1100° C. exhibit a high dielectric constant and a smooth (X7R) temperature coefficient of capacitance. Such capacitors are made by mixing ...	04/23/1991
4992399	Ceramic, circuit substrate and electronic circuit substrate by use thereof and process for producing ceramic The present invention provides a ceramic having a first region comprising a dielectric porcelain having an insulating layer at the crystal grain boundary of a semiconductor porcelain containing 0.50 to 5.30 mol parts of MnO2 and 0.02 to 0.40 mo...	02/12/1991
4987108	Dielectric paste A dielectric paste for fabrication of multilayer ceramic substrates containing capacitive circuits. The paste comprises a dielectric powder composed of a dielectric material and a vitreous binder suspended in an organic vehicle. The dielectric material co...	01/22/1991
4882651	Monolithic compound-ceramic capacitor A green ceramic cake is formed comprised of a center layer of fine-ceramic particles sandwiched between two outer layers of relatively coarse-ceramic particles. However, the chemical compositions of the center and outer layers are all essentially the same...	11/21/1989
4882650	Magnesium titanate ceramic and dual dielectric substrate using same The average chemical composition of a reaction band at the interface adjacent co-sintered layers of barium titanate and a low K magnesium zinc titanate is found to be Mg0.5 Ba0.25 Zn0.25 TiO3. That magnesium bar...	11/21/1989
4870539	Doped titanate glass-ceramic for grain boundary barrier layer capacitors A high dielectric constant glass-ceramic material comprising small conducting grains based on BaTiO3 and/or SrTiO3 on the order of about 0.5-10.0 μm surrounded by a thin microcrystalline insulating barrier layer at the grain boundar...	09/26/1989
4804490	Method of fabricating stabilized threshold switching material A method of stabilizing the switching characteristics of a thin film chalcogenide glass material by subjecting said material to a hydrogenated atmosphere, preferably activated hydrogen and argon. It is also preferred to provide a post hydrogenation anneal...	02/14/1989
4785375	Temperature stable dielectric composition at high and low frequencies The invention is directed to a dielectric ceramic having a dielectric constant K, greater than 35, a quality factor, Q, greater than 9,000 at 4 GHz and a reduction of the firing temperature to less than about 1350° C. The dielectric ceramic co...	11/15/1988
4780306	Electrically conductive material composed of titanium oxide crystal and method of producing the same An electrically conductive material of titanium dioxide crystal comprising at least one electrically conductive portion and at least one less conductive portion, and a method of producing the electrically conductive material, which comprises the steps of ...	10/25/1988
4752857	Thin tape for dielectric materials An improved, flexible, strong, thin precursor green tape for dielectric ceramics is described. The tape is prepared from a cellulosic resin of specific characteristics. The tape is especially useful in the preparation of multilayer capacitors and related ...	06/21/1988
4650648	Ozone generator with a ceramic-based dielectric In modern ozone generators high power densities can be achieved using ceramic-based dielectrics and suitable gap widths and double cooling. By constructing the dielectric layer from dielectric powders of different grain size and binding with artificial re...	03/17/1987
4641221	Thin tape for dielectric materials An improved, flexible, strong, thin precursor green tape for dielectric ceramics, the tape being prepared from ethylcellulose of specific characteristics. The tape is especially useful in the preparation of multilayer capacitors and related electronic dev...	02/03/1987

«First «Previous1 2 Next»Last»

PatentStorm

Quotables

PatentStorm News

Class 252/62.3BT - Containing Group IV element and oxygen; e.g., barium, titanium III oxide