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Patent No. 6266829

Combination Beverage Container and Spittoon

A combination beverage container and spittoon includes a bottom portion including outer wall and a first inner wall defining a spittoon space.

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Class 216/99 - Substrate contains silicon or silicon compound


Subclass of Class 216 - Etching a substrate: processes
Definition: Process wherein the substrate contains silicon in either
No. of patents: 632
Last issue date: 05/29/2012


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NumberTitleIssue Date
8187487Material removal methods employing solutions with reversible ETCH selectivities
A method for removing (e.g., etching) different dielectric materials from a semiconductor substrate includes exposing the semiconductor substrate to a solution at temperatures below and at or above a set threshold. Below the threshold temperature, the solution remov...
05/29/2012
8182710Structuring method
A method of structuring multicrystalline silicon surfaces comprises the provision of a texturing solution, the application of the texturing solution to a surface of a semiconductor substrate to be structured and the heating of the texturing solution to a texturing t...
05/22/2012
8168076Method for producing a mould for nanostructured polymer objects
A mould for objects made of polymer material is produced by successively depositing a barrier thin layer and a thin layer of diamond-like carbon on at least a part of a metal support. The thin layer of diamond-like carbon is then nanopatterned with a predetermined p...
05/01/2012
7998359Methods of etching silicon-containing films on silicon substrates
A method for selectively etching a silicon-containing film on a silicon substrate is disclosed. The method includes depositing a silicon-containing film on the silicon substrate. The method further includes baking the silicon-containing film to create a densified si...
08/16/2011
7988876Method for reducing and homogenizing the thickness of a semiconductor layer which lies on the surface of an electrically insulating material
To reduce and homogenize the thickness of a semiconductor layer which lies on the surface of an electrically insulating material, the surface of the semiconductor layer is exposed to the action of an etchant whose redox potential is adjusted as a function of the mat...
08/02/2011
7964109Method of cleaning a surface of a cobalt-containing material, method of forming an opening to a cobalt-containing material, semiconductor processing method of forming an integrated circuit comprising a copper-containing conductive line, and a cobalt-containing film cleaning solution
The invention includes methods of cleaning a surface of a cobalt-containing material, methods of forming an opening to a cobalt-containing material, semiconductor processing methods of forming an integrated circuit comprising a copper-containing conductive line, and...
06/21/2011
7927500Poly etch without separate oxide decap
The use of an ammonium hydroxide spike to a hot tetra methyl ammonium hydroxide (TMAH) solution to form an insitu poly oxide decapping step in a polysilicon (poly) etch process, results in a single step rapid poly etch process having uniform etch initiation and a hi...
04/19/2011
7811464Preferential etching method and silicon single crystal substrate
There is provided a preferential etching method wherein a preferential etchant which contains at least a hydrofluoric acid whose composition by volume falls within the range of 0.02 to 0.1, a nitric acid whose composition by volume falls within the range of 0.5 to 0...
10/12/2010
7780868Alkaline etching solution for semiconductor wafers and alkaline etching method
Alkaline etching solutions capable of improving a surface roughness even with a relatively low alkaline concentration, contain bromate or both bromate and nitrate. An alkaline etching method using the solution produces silicon wafers with improved surface roughness....
08/24/2010
7591959Etchants and etchant systems with plural etch selectivities
An etchant for removing materials with a plurality of selectivities exhibits a first etch selectivity at a first temperature and a second etch selectivity at a second temperature. The etchant may include phosphoric acid, fluoboric acid, or sulfuric acid. The materia...
09/22/2009
7501072Etching solution comprising hydrofluoric acid
This invention relates to etching solutions which comprise hydrofluoric acid and organic solvents for use in the process for the production of integrated circuits. The etching solutions according to the invention are particularly suitable for the selective etching o...
03/10/2009
7442317Method of forming a nozzle rim
A method of forming a nozzle rim for a nozzle aperture is provided. The method is suitable for forming part of a printhead fabrication process. The method comprises the steps of: (a) depositing a roof material layer over a sacrificial layer; and (b) removing a first...
10/28/2008
7442319Poly etch without separate oxide decap
The use of an ammonium hydroxide spike to a hot tetra methyl ammonium hydroxide (TMAH) solution to form an insitu poly oxide decapping step in a polysilicon (poly) etch process, results in a single step rapid poly etch process having uniform etch initiation and a hi...
10/28/2008
7439183Method of manufacturing a semiconductor device, and a semiconductor substrate
A method of manufacturing a semiconductor device. In the method, a thin film is formed on an Si substrate having face orientation (100), that part of the thin film, which lies on an element-isolating region, is removed. Then, the Si substrate is subjected to ...
10/21/2008
7416984Method of producing a MEMS device
A method of producing a MEMS device removes the bottom side of a device wafer after its movable structure is formed. To that end, the method provides the device wafer, which has an initial bottom side. Next, the method forms the movable structure on the device wafer...
08/26/2008
7416674Method for fabricating micro optical elements using CMP
A technique for fabricating the required surface shapes for micro optical elements, such as curved micro mirrors and lenses, starts with a simple, binary for example, approximation to the desired surface shape. Then polishing, e.g., chemical mechanical polishing (CM...
08/26/2008
7405165Dual-tank etch method for oxide thickness control
A dual-tank etch method which is suitable for the stripping of a silicon nitride layer from a pad oxide layer provided on a substrate, and etching of the pad oxide layer to a desired target thickness, is disclosed. The method includes providing a first processing ta...
07/29/2008
7399430Method for manufacturing phosphor, phosphor and plasma display panel
It is an object of the present invention to control damage of a phosphor caused by an etching solution. Disclosed is a method of manufacturing a phosphor having the steps of: (a) crushing phosphor particles via a crushing treatment process, and (b) surface-treating ...
07/15/2008
7396484Methods of fabricating complex blade geometries from silicon wafers and strengthening blade geometries
Ophthalmic surgical blades are manufactured from either a single crystal or poly-crystalline material, preferably in the form of a wafer. The method comprises preparing the single crystal or poly-crystalline wafers by mounting them and etching trenches into the wafe...
07/08/2008
7396483Uniform chemical etching method
The invention concerns a method of wet chemical etching of a wafer comprising at least one surface layer of silicon-germanium (SiGe) for etching by dispensing an etching solution deposited on a rotating wafer, the method being characterized in that it comprises a fi...
07/08/2008
7390745Pattern enhancement by crystallographic etching
A method for producing predetermined shapes in a crystalline Si-containing material that have substantially uniform straight sides or edges and well-defined inside and outside corners is provided together with the structure that is formed utilizing the method of the...
06/24/2008
7387742Silicon blades for surgical and non-surgical use
Ophthalmic surgical blades are manufactured from either a crystalline or polycrystalline material, preferably in the form of a wafer. The method comprises preparing the crystalline or polycrystalline wafers by mounting them and machining trenches into the wafers. Me...
06/17/2008
7384486Chamber cleaning method
A method for cleaning a process chamber in such a manner that chamber-cleaning chemicals or agents are incapable of remaining in the chamber after cleaning and chemically interfering with semiconductor fabrication or other processes subsequently carried out in the c...
06/10/2008
7381340Ink jet printhead that incorporates an etch stop layer
An ink jet printhead chip that is manufactured in accordance with an integrated circuit fabrication technique includes a wafer substrate that defines a plurality of nozzle chambers as a result of an etching process. An etch stop layer is positioned on a front side o...
06/03/2008
7365012Etching method, a method of forming a trench isolation structure, a semiconductor substrate and a semiconductor apparatus
An etching method of subjecting a base material to an etching process using an etching agent containing hydrogen fluoride and ozone is disclosed. The base material has a first region constituted from silicon as a main material and a second region constituted from Si...
04/29/2008
7366381Optical waveguide chip and optical component comprising same
An optical waveguide chip including a core portion as an optical waveguide, a clad portion composed of a lower clad layer and an upper clad layer, and an optical fiber guide portion which is formed integrally with the clad portion for positioning a single-mode optic...
04/29/2008
7362488Tiltable-body apparatus, and method of fabricating the same
The tiltable-body apparatus including a frame member, a tiltable body, and a pair of torsion springs having a twisting longitudinal axis. The torsion springs are disposed along the twisting longitudinal axis opposingly with the tiltable body being interposed, suppor...
04/22/2008
7354523Methods for sidewall etching and etching during filling of a trench
A method for sidewall etching includes providing a substrate having a trench defined therein, with the trench having fill material disposed over a bottom thereof, along a sidewall thereof, and at the trench opening. The fill material along the sidewall of the trench...
04/08/2008
7344652Plasma etching method
An etching method for forming a recess (220) having an opening dimension (R) of millimeter order in an object (212) to be etched such as a semiconductor wafer. A mask (214) having an opening corresponding to the recess (220) is formed on ...
03/18/2008
7338610Etching method for manufacturing semiconductor device
A wafer having a dielectric layer and an electrode partially protruding from the top surface of the dielectric layer is provided. The dielectric layer is etched with a chemical solution such as LAL. Prior to etching, the protruding portion of the electrode is remove...
03/04/2008
7336376Measuring pyramid size on a textured surface
A method for measuring pyramid size of pyramids outwardly extending on a textured surface of an object, which method involves emitting from a light source a light beam along a first direction onto a region of the textured surface, measuring an intensity of light rec...
02/26/2008
7322104Method for producing an ink jet head
An ink jet head includes a substrate having a flow path construction member constructing a plurality of discharge ports for discharging ink and a plurality of ink flow paths corresponding thereto, and a plurality of energy generating elements corresponding to the pl...
01/29/2008
7316981Method of removing silicon from a substrate
A wet etching method of removing silicon from a substrate includes depositing a layer comprising silicon in elemental form over a substrate. The layer is exposed to an aqueous liquid etching solution comprising a hydroxide and a fluoride, and having a pH of at least...
01/08/2008
7306744Method of manufacturing a nozzle plate
A method of manufacturing a nozzle plate 2 is disclosed. The nozzle plate 2 has a plurality of nozzle openings 22 through each of which a droplet is adapted to be ejected. The method includes the steps of: preparing a processing substrate (silic...
12/11/2007
7306637Anionic abrasive particles treated with positively charged polyelectrolytes for CMP
The invention provides chemical-mechanical polishing systems, and methods of polishing a substrate using the polishing systems, comprising (a) an abrasive, (b) a liquid carrier, and (c) a positively charged polyelectrolyte with a molecular weight of about 15,000 or ...
12/11/2007
7300598Substrate processing method and apparatus
The invention relates to a process including a chemical liquid treatment and a rinse liquid treatment on a substrate, more particularly to a technique for reducing consumption of a chemical liquid while achieving uniform process and preventing particle generation. I...
11/27/2007
7294279Method for releasing a micromechanical structure
A method for releasing a micromechanical structure. A substrate is provided. At least one micromechanical structural layer is provided above the substrate, wherein the micromechanical structural layer is sustained by a sacrificial layer of a silicon material. An ami...
11/13/2007
7279424Method for fabricating thin film magnetic heads using CMP with polishing stop layer
A method is described for thin film processing using a selected CMP slurry with a silicon dioxide stop layer. The slurry includes an abrasive, preferably alumina, a corrosion inhibitor, preferably benzotriazole (BTA), and an oxidizer preferably hydrogen peroxide. Th...
10/09/2007
7277214Tiltable-body apparatus, and method of fabricating the same
The tiltable-body apparatus including a frame member, a tiltable body, and a pair of torsion springs having a twisting longitudinal axis. The torsion springs are disposed along the twisting longitudinal axis opposingly with the tiltable body being interposed, suppor...
10/02/2007
7270717Compositions and methods for cleaning contaminated articles
Disclosed are compositions and methods for cleaning contaminated articles based on the provision of a zeotropic composition comprising (a) at least one flammable solvent having a boiling point at a first pressure; (b) at least one first nonflammable solvent having a...
09/18/2007
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