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| Number | Title | Issue Date |
| 8101093 | Chemical-mechanical polishing composition and method for using the same The invention provides methods of polishing a noble metal-containing substrate with one of two chemical-mechanical polishing compositions. The first chemical-mechanical polishing composition comprises (a) an abrasive comprising α-alumina, (b) about 0.05 to about 50... | 01/24/2012 |
| 8075792 | Nanoparticle-based etching of silicon surfaces A method (300) of texturing silicon surfaces (116) such to reduce reflectivity of a silicon wafer (110) for use in solar cells. The method (300) includes filling (330, 340) a vessel (122) with a volume of an etching solution... | 12/13/2011 |
| 8025808 | Methods for machine ceramics A method for machining a ceramic substrate containing Al, including providing a solution containing a phosphorus compound on the ceramic substrate; and machining the substrate with an abrasive. ... | 09/27/2011 |
| 8025809 | Polishing methods A chemical-mechanical polishing (CMP) method includes applying a solid abrasive material to a substrate, polishing the substrate, flocculating at least a portion of the abrasive material, and removing at least a majority portion of the flocculated portion from the s... | 09/27/2011 |
| 7955517 | Polishing fluid composition To provide a polishing composition capable of increasing polishing rate and reducing surface roughness, without causing surface defects on a surface of an object to be polished; and a polishing process for a substrate to be polished. [1] a polishing composition comp... | 06/07/2011 |
| 7914694 | Semiconductor wafer handler A semiconductor wafer handler comprises a ring (70) attached to a hub (80) by a plurality of spokes (90). Vacuum is applied to the surface of the semiconductor wafer through orifices (100) containing in the ring (70). Water and/or ... | 03/29/2011 |
| 7857985 | Metal-polishing liquid and chemical mechanical polishing method using the same The invention provides a metal polishing liquid comprising an oxidizing agent and colloidal silica in which a part of a surface of the colloidal silica is covered with aluminum atoms, and a Chemical Mechanical Polishing method using the same. An amino acid, a compou... | 12/28/2010 |
| 7857986 | Chemical mechanical polishing slurry and chemical mechanical polishing apparatus and method A chemical mechanical polishing (CMP) slurry and a chemical mechanical polishing (CMP) apparatus and method reduce defects, such as scratches, while maintaining a high polishing rate of a target film to be polished through a CMP process. The CMP slurry includes a ce... | 12/28/2010 |
| 7837890 | Printable medium for the etching of silicon dioxide and silicon nitride layers The present invention relates to a novel printable etching medium having non-Newtonian flow behavior for the etching of surfaces in the production of solar cells and to the use thereof. In particular, the invention relates to corresponding particle-containing compos... | 11/23/2010 |
| 7833431 | Aqueous dispersion for CMP, polishing method and method for manufacturing semiconductor device An aqueous dispersion for chemical mechanical polishing is provided, which includes water and a resin particle. The resin particles accompany with a projection having a curvature radius ranging from 10 nm to 1.65 μm on a surface. The maximum length of the resin par... | 11/16/2010 |
| 7449124 | Method of polishing a wafer A method for polishing a wafer comprising an aqueous solution having a pH in the range of 6 to 8, wherein the aqueous solution comprises at least one compound selected from the group consisting of a polymethacrylic acid, a polysulfonic acid, and combinations thereof... | 11/11/2008 |
| 7442645 | Method of polishing a silicon-containing dielectric The inventive method of polishing a silicon-containing dielectric layer involves the use of a chemical-mechanical polishing system comprising (a) an inorganic abrasive, (b) a polishing additive, and (c) a liquid carrier, wherein the polishing composition has a pH of... | 10/28/2008 |
| 7438632 | Method and apparatus for cleaning a web-based chemical mechanical planarization system A method and apparatus for cleaning a web-based chemical-mechanical planarization (CMP) system. Specifically, a fluid spray bar is coupled to a frame assembly which may be mounted on a CMP system. The fluid spray bar will move along the frame assembly. As the fluid ... | 10/21/2008 |
| 7432205 | Method for controlling polishing process The invention is directed to a method for controlling a polishing process. The method comprises steps of providing a first wafer, wherein a thin film is located over the first wafer. A film average thickness distribution is obtained by measuring a plurality of thick... | 10/07/2008 |
| 7429338 | Surface modified colloidal abrasives, including stable bimetallic surface coated silica sols for chemical mechanical planarization A composition and an associated method for chemical mechanical planarization (or other polishing) are described. The composition includes a surface-modified abrasive modified with at least one stabilizer and at least one catalyst differing from the at least one stab... | 09/30/2008 |
| 7416674 | Method for fabricating micro optical elements using CMP A technique for fabricating the required surface shapes for micro optical elements, such as curved micro mirrors and lenses, starts with a simple, binary for example, approximation to the desired surface shape. Then polishing, e.g., chemical mechanical polishing (CM... | 08/26/2008 |
| 7402259 | Chemical-mechanical polishing methods A chemical-mechanical polishing (CMP) method includes applying a solid abrasive material to a substrate, polishing the substrate, flocculating at least a portion of the abrasive material, and removing at least a majority portion of the flocculated portion from the s... | 07/22/2008 |
| 7402258 | Methods of removing metal contaminants from a component for a plasma processing apparatus Methods of removing metal contaminants from a component for a plasma processing apparatus are provided. The method includes cleaning a surface of the component with a cleaning liquid that includes at least one acid selected from oxalic acid, formic acid, acetic acid... | 07/22/2008 |
| 7402261 | Slurry compositions, methods of preparing slurry compositions, and methods of polishing an object using slurry compositions A slurry composition includes an acidic aqueous solution and one or both of, an amphoteric surfactant and a glycol compound. Examples of the amphoteric surfactant include a betaine compound and an amino acid compound, and examples of the amino acid compound include ... | 07/22/2008 |
| 7393790 | Method of manufacturing carrier wafer and resulting carrier wafer structures A method is disclosed for preparing carrier wafers for semiconductor device manufacture. The method includes the steps of sorting a plurality of standard carrier wafer blanks into batches by thickness to define a batch of starting carrier wafers that are within a pr... | 07/01/2008 |
| 7390423 | Self-cleaning colloidal slurry composition and process for finishing a surface of a substrate A self-cleaning colloidal slurry and process for finishing a surface of a glass, ceramic, glass-ceramic, metal or alloy substrate for use in a data storage device, for example. The slurry comprises a carrying fluid, colloidal particles, etchant, and a surfactant ads... | 06/24/2008 |
| 7387963 | Semiconductor wafer and process for producing a semiconductor wafer A semiconductor wafer has an edge region with no defects larger than or equal to 0.3 μm. The wafers are produced by a process, comprising (a) providing a semiconductor wafer having a rounded and etched edge; (b) polishing the edge of the semiconductor wafer, in whi... | 06/17/2008 |
| 7381647 | Methods and systems for planarizing microelectronic devices with Ge-Se-Ag layers Microelectronic devices including a layer of germanium and selenium, optionally including up to 10 atomic percent silver, show promise for select applications. Manufacturing microelectronic devices containing such layers using conventional CMP processes presents som... | 06/03/2008 |
| 7381648 | Chemical mechanical polishing slurry useful for copper substrates A chemical mechanical polishing slurry comprising an oxidizing agent, a complexing agent, an abrasive, and an optional surfactant, as well as a method for using the chemical mechanical polishing slurry to remove copper alloy, titanium, titanium nitride, tantalum and... | 06/03/2008 |
| 7377836 | Versatile wafer refining Methods of refining using a plurality of refining elements are discussed. A refining apparatus having refining elements that can be smaller than the workpiece being refined are disclosed. New refining methods, refining apparatus, and refining elements disclosed. Met... | 05/27/2008 |
| 7371686 | Method and apparatus for polishing a semiconductor device A method and an apparatus for polishing a semiconductor wafer are provided. An initial thickness of the semiconductor wafer is actually measured to obtain a measured initial thickness value. First and second inter-positions are then set or determined with reference ... | 05/13/2008 |
| 7368387 | Polishing composition and polishing method A polishing composition includes fumed alumina, alumina other than fumed alumina, colloidal silica, a first organic acid, a second organic acid, an oxidizing agent, and water. When the second organic acid is citric acid, the first organic acid is preferably malic ac... | 05/06/2008 |
| 7368063 | Method for manufacturing ink-jet printhead In an ink-jet printhead and a method for manufacturing the same, the ink-jet printhead includes a substrate, an ink chamber to be filled with ink formed on a front surface of the substrate, a manifold for supplying ink to the ink chamber formed on a rear surface of ... | 05/06/2008 |
| 7368066 | Gold CMP composition and method The invention provides a cyanide-free chemical-mechanical polishing (CMP) composition useful for polishing a gold-containing surface of a substrate. The CMP composition comprises an abrasive, a gold-oxidizing agent, a cyanide-free gold-solubilizing agent, and an aqu... | 05/06/2008 |
| 7364667 | Slurry for CMP and CMP method A CMP slurry comprising polishing abrasives containing mixture abrasives of silica and alumina is used. In CMP using the slurry comprising mixture abrasives of silica and alumina as polishing abrasives, a down force-dependency of a polishing rate is high and an incr... | 04/29/2008 |
| 7361603 | Passivative chemical mechanical polishing composition for copper film planarization A CMP composition containing 5-aminotetrazole, e.g., in combination with oxidizing agent, chelating agent, abrasive and solvent and a method of use. Such CMP composition may be diluted during the CMP polish to minimize the occurrence of dishing or other adverse plan... | 04/22/2008 |
| 7354530 | Chemical mechanical polishing systems and methods for their use Alpha-amino acid containing chemical mechanical polishing compositions and slurries that are useful for polishing substrates including multiple layers of metals, or metals and dielectrics. ... | 04/08/2008 |
| 7351667 | Etching solution for silicon oxide method of manufacturing a semiconductor device using the same An etching solution for silicon oxide may be used in a process for enlarging an opening formed through a silicon oxide layer. The etching solution includes about 0.2 to about 5.0 percent by weight of a hydrogen fluoride solution, about 0.05 to about 20.0 percent by ... | 04/01/2008 |
| 7348276 | Fabrication process of semiconductor device and polishing method A method of fabricating a semiconductor device includes a polishing process of a substrate, wherein the polishing process includes the steps of applying a chemical mechanical polishing process to the substrate on a polishing pad while using slurry, and conditions a ... | 03/25/2008 |
| 7344988 | Alumina abrasive for chemical mechanical polishing Methods of manufacturing alumina abrasive for use in chemical mechanical polishing are described, wherein the abrasive is in a slurry having gamma alumina formed in a low temperature fuming process, water, an acid sufficient to maintain the pH below about 7, wherein... | 03/18/2008 |
| 7331847 | Vibration damping in chemical mechanical polishing system A carrier head for chemical mechanical polishing, includes a base, a support structure attached to the base having a surface for contacting a substrate, and a retaining structure attached to the base to prevent the substrate from moving along the surface. The retain... | 02/19/2008 |
| 7332437 | Method for processing semiconductor wafer and semiconductor wafer There is provided a method for processing a semiconductor wafer subjected to a chamfering process, a lapping process, an etching process, and a mirror-polishing process, wherein acid etching is performed after alkaline etching as the etching process, and the acid et... | 02/19/2008 |
| 7323416 | Method and composition for polishing a substrate Polishing compositions and methods for removing conductive materials from a substrate surface are provided. In one aspect, a method is provided for processing a substrate to remove conductive material disposed over narrow feature definitions formed in a substrate at... | 01/29/2008 |
| 7316786 | Method of polishing film to be polished A method is provided that includes a main laminate making step of forming a plurality of main magnetic poles onto a substrate, covering each magnetic pole with a first protective film, and forming onto the first protective film a stopper film provided with openings ... | 01/08/2008 |
| 7314575 | Manufacturing method of glass substrate for magnetic disk, and manufacturing method of magnetic disk A method for manufacturing a glass substrate for a magnetic disk comprises mirror surface polishing and cleaning of a glass substrate, wherein polishing agent of which the principal component is rare-earth oxide with content of fluorine 5% by weight or less, is supp... | 01/01/2008 |
