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Cloaking System Using Optoelectronically Controlled Camouflage
A Cloaking System designed to operate in the visible light spectrum, utilizes optoelectronics and/or photonic components to conceal an object within it.
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| Number | Title | Issue Date |
| 8168075 | Methods for machining inorganic, non-metallic workpieces A method of machining a workpiece includes applying a fluid between a fixed abrasive component and a workpiece, followed by translation of the fixed abrasive component and the workpiece relative to each other. The fluid contains an anti-clogging agent containing a p... | 05/01/2012 |
| 8123970 | Potassium monopersulfate solutions A composition comprising a solution of potassium monopersulfate having an active oxygen content of from about 3.4% to about 6.8% and a process for its preparation including neutralization with an alkaline material is disclosed. ... | 02/28/2012 |
| 8088299 | Multiple zone carrier head with flexible membrane A carrier head for chemical mechanical polishing of a substrate includes a base and a flexible membrane extending beneath the base. The flexible membrane includes a central portion with an outer surface providing a substrate receiving surface, a perimeter portion co... | 01/03/2012 |
| 8083964 | Metal-polishing liquid and polishing method A metal-polishing liquid used for chemical-mechanical polishing of a conductor film of copper or a copper alloy in a process for manufacturing a semiconductor device, the metal-polishing liquid comprising: (1) an amino acid derivative represented by the formula (I);... | 12/27/2011 |
| 8048330 | Method of forming an interlayer dielectric material having different removal rates during CMP By providing an interlayer dielectric material with different removal rates, a desired minimum material height above gate electrode structures of sophisticated transistor devices of the 65 nm technology or 45 nm technology may be obtained. The reduced removal rate a... | 11/01/2011 |
| 8038898 | Abrasive liquid for metal and method for polishing An abrasive liquid for a metal comprising (1) an oxidizing agent for a metal, (2) a dissolving agent for an oxidized metal, (3) a first protecting film-forming agent such as an amino acid or an azole which adsorbs physically on the surface of the metal and/or forms ... | 10/18/2011 |
| 8007676 | Slurry compositions, methods of preparing slurry compositions, and methods of polishing an object using slurry compositions A slurry composition includes an acidic aqueous solution and one or both of, an amphoteric surfactant and a glycol compound. Examples of the amphoteric surfactant include a betaine compound and an amino acid compound, and examples of the amino acid compound include ... | 08/30/2011 |
| 7959820 | Substrate processing method and substrate processing apparatus According to the substrate processing method of the invention, a jet of droplets generated from a gas and a heated processing liquid is supplied to the surface of a substrate. A resist stripping liquid to strip off the resist from the surface of the substrate is the... | 06/14/2011 |
| 7947190 | Methods for polishing semiconductor device structures by differentially applying pressure to substrates that carry the semiconductor device structures An apparatus for applying different amounts of pressure to different locations of a backside of a semiconductor device structure during polishing thereof. The apparatus is configured to be associated with a wafer carrier of a polishing apparatus and includes pressur... | 05/24/2011 |
| 7938979 | Method of fabricating mirrors for liquid crystal on silicon display device The present invention discloses a method of fabricating mirrors for LCOS (Liquid Crystal On Silicon) display device, including: forming a dielectric layer over a silicon substrate; forming a stop layer over the dielectric layer; forming an insulation layer over the ... | 05/10/2011 |
| 7919006 | Method of anti-stiction dimple formation under MEMS A method for making a MEMS structure comprises patterning recesses in a dielectric layer overlying a substrate, each recess being disposed between adjacent mesas of dielectric material. A conformal layer of semiconductor material is formed overlying the recesses and... | 04/05/2011 |
| 7862737 | Planarizing method Provided is a planarizing method in which a planarization with high flatness can be performed, without being restricted by the distribution of film thickness in the applied resist film. The planarizing method comprises the steps of: forming a resist film on a film t... | 01/04/2011 |
| 7776230 | CMP system utilizing halogen adduct The invention provides a chemical-mechanical polishing system for polishing a substrate comprising (a) a polishing component selected from an abrasive, a polishing pad, or both an abrasive and a polishing pad, (b) an aqueous carrier, and (c) the halogen adduct resul... | 08/17/2010 |
| 7708900 | Chemical mechanical polishing slurry compositions, methods of preparing the same and methods of using the same Provided herein are chemical mechanical polishing (CMP) slurries and methods for producing the same. Embodiments of the invention include CMP slurries that include (a) a metal oxide; (b) a quaternary ammonium base; and (c) a fluorinated surfactant. In some em... | 05/04/2010 |
| 7604751 | Polishing liquid composition A polishing liquid composition is applicable as a means of forming embedded metal interconnections on a semiconductor substrate. In a surface to be polished comprising an insulating layer and a metal interconnection layer, the polishing liquid composition is capable... | 10/20/2009 |
| 7585425 | Apparatus and method for reducing removal forces for CMP pads An improvement in a polishing apparatus for planarizing substrates comprises a tenacious coating of a low-adhesion material to the platen surface. An expendable polishing pad is adhesively attached to the low-adhesion material, and may be removed for periodic replac... | 09/08/2009 |
| 7582221 | Wafer manufacturing method, polishing apparatus, and wafer The present invention provides a wafer manufacturing method and a wafer polishing apparatus which enable control of sags in a periphery of a wafer and improvement of nanotopology values thereof that is strongly required recently, and a wafer. In a polishing process ... | 09/01/2009 |
| 7563383 | CMP composition with a polymer additive for polishing noble metals The invention provides a method of polishing a substrate comprising contacting a substrate comprising a noble metal on a surface of the substrate with a chemical-mechanical polishing system comprising (a) a polishing component selected from the group consisting of a... | 07/21/2009 |
| 7534364 | Methods for a multilayer retaining ring A substrate is maintained beneath a substrate mounting surface with a retaining ring that includes a generally annular lower portion having a bottom surface for contacting the polishing surface during polishing, and a generally annular upper portion having a bottom ... | 05/19/2009 |
| 7527743 | Apparatus and method for etching insulating film An apparatus and a method for etching insulating film prevents generation of spots by spraying etchant on a lower surface of the substrate as well as the upper surface. ... | 05/05/2009 |
| 7514016 | Methodology of chemical mechanical nanogrinding for ultra precision finishing of workpieces A chemical-mechanical nanogrinding process achieves near-zero pole tip recession (PTR) to minimize magnetic space loss of the head transducer to media spacing loss, alumina recession and trailing edge profile variation, and smooth surface finish with minimal smearin... | 04/07/2009 |
| 7455791 | Abrasives for copper CMP and methods for making An aqueous chemical mechanical polishing slurry is provided that comprises precipitated amorphous silica abrasive particles treated with acidic aluminum. Also provided is a method of polishing an electronic component substrate comprising the steps of: a) obtaining a... | 11/25/2008 |
| 7442323 | Potassium monopersulfate solutions A composition comprising a solution of potassium monopersulfate having an active oxygen content of from about 3.4% to about 6.8% and a process for its preparation including neutralization with an alkaline material is disclosed. ... | 10/28/2008 |
| 7442317 | Method of forming a nozzle rim A method of forming a nozzle rim for a nozzle aperture is provided. The method is suitable for forming part of a printhead fabrication process. The method comprises the steps of: (a) depositing a roof material layer over a sacrificial layer; and (b) removing a first... | 10/28/2008 |
| 7432205 | Method for controlling polishing process The invention is directed to a method for controlling a polishing process. The method comprises steps of providing a first wafer, wherein a thin film is located over the first wafer. A film average thickness distribution is obtained by measuring a plurality of thick... | 10/07/2008 |
| 7429338 | Surface modified colloidal abrasives, including stable bimetallic surface coated silica sols for chemical mechanical planarization A composition and an associated method for chemical mechanical planarization (or other polishing) are described. The composition includes a surface-modified abrasive modified with at least one stabilizer and at least one catalyst differing from the at least one stab... | 09/30/2008 |
| 7416674 | Method for fabricating micro optical elements using CMP A technique for fabricating the required surface shapes for micro optical elements, such as curved micro mirrors and lenses, starts with a simple, binary for example, approximation to the desired surface shape. Then polishing, e.g., chemical mechanical polishing (CM... | 08/26/2008 |
| 7413988 | Method and apparatus for detecting planarization of metal films prior to clearing A method for planarizing a semiconductor substrate is provided. The method initiates with tracking a signal corresponding to a thickness of a conductive film disposed on the semiconductor substrate. Then, a second derivative is calculated from data representing the ... | 08/19/2008 |
| 7402258 | Methods of removing metal contaminants from a component for a plasma processing apparatus Methods of removing metal contaminants from a component for a plasma processing apparatus are provided. The method includes cleaning a surface of the component with a cleaning liquid that includes at least one acid selected from oxalic acid, formic acid, acetic acid... | 07/22/2008 |
| 7393790 | Method of manufacturing carrier wafer and resulting carrier wafer structures A method is disclosed for preparing carrier wafers for semiconductor device manufacture. The method includes the steps of sorting a plurality of standard carrier wafer blanks into batches by thickness to define a batch of starting carrier wafers that are within a pr... | 07/01/2008 |
| 7390423 | Self-cleaning colloidal slurry composition and process for finishing a surface of a substrate A self-cleaning colloidal slurry and process for finishing a surface of a glass, ceramic, glass-ceramic, metal or alloy substrate for use in a data storage device, for example. The slurry comprises a carrying fluid, colloidal particles, etchant, and a surfactant ads... | 06/24/2008 |
| 7381648 | Chemical mechanical polishing slurry useful for copper substrates A chemical mechanical polishing slurry comprising an oxidizing agent, a complexing agent, an abrasive, and an optional surfactant, as well as a method for using the chemical mechanical polishing slurry to remove copper alloy, titanium, titanium nitride, tantalum and... | 06/03/2008 |
| 7381647 | Methods and systems for planarizing microelectronic devices with Ge-Se-Ag layers Microelectronic devices including a layer of germanium and selenium, optionally including up to 10 atomic percent silver, show promise for select applications. Manufacturing microelectronic devices containing such layers using conventional CMP processes presents som... | 06/03/2008 |
| 7377836 | Versatile wafer refining Methods of refining using a plurality of refining elements are discussed. A refining apparatus having refining elements that can be smaller than the workpiece being refined are disclosed. New refining methods, refining apparatus, and refining elements disclosed. Met... | 05/27/2008 |
| 7368387 | Polishing composition and polishing method A polishing composition includes fumed alumina, alumina other than fumed alumina, colloidal silica, a first organic acid, a second organic acid, an oxidizing agent, and water. When the second organic acid is citric acid, the first organic acid is preferably malic ac... | 05/06/2008 |
| 7367866 | Apparatus and method for polishing semiconductor wafers using pivotable load/unload cups An apparatus and method for polishing objects, such as semiconductor wafers, utilizes pivotable load/unload cups to transfer the objects to object carriers to polish the objects on at least one polishing surface. The pivoting axes of the pivotable load/unload cups a... | 05/06/2008 |
| 7364667 | Slurry for CMP and CMP method A CMP slurry comprising polishing abrasives containing mixture abrasives of silica and alumina is used. In CMP using the slurry comprising mixture abrasives of silica and alumina as polishing abrasives, a down force-dependency of a polishing rate is high and an incr... | 04/29/2008 |
| 7361600 | Semiconductor manufacturing apparatus having a built-in inspection apparatus and a device manufacturing method using said manufacturing apparatus According to the present invention, a chemical and mechanical polishing apparatus (100) for a sample such as a wafer includes a built-in inspection apparatus (25) incorporated therein. The polishing apparatus (100) further comprises a load unit ... | 04/22/2008 |
| 7354526 | Processing method for glass substrate, processed glass product and stress applying apparatus A processing method for glass substrate of the present invention includes: applying heat and external force to a glass substrate and then cooling it down to thereby form a compression stressed part having a different etching rate from that of other parts with respec... | 04/08/2008 |
| 7354527 | Chemical mechanical polishing pad and chemical mechanical polishing process A chemical mechanical polishing pad which has a storage elastic modulus E′(30° C.) at 30° C. of 120 MPa or less and an (E′(30° C.)/E′(60° C.)) ratio of the storage elastic modulus E′(30° C.) at 30° C. to the storage elastic modulus E′(60° C.) at 60Â... | 04/08/2008 |
