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| Number | Title | Issue Date |
| 8075789 | Remote plasma cleaning source having reduced reactivity with a substrate processing chamber A method and apparatus for cleaning a chamber in a substrate processing system having less reactivity with the chamber walls and the components contained therein. The method includes mixing a diluent gas with a flow of radicals produced by a plasma remotely disposed... | 12/13/2011 |
| 7955513 | Apparatus and method for reactive atom plasma processing for material deposition A method for shaping a surface of a workpiece, comprises positioning at least one of a workpiece and an inductively-coupled plasma (ICP) torch including three concentrically arranged tubes. A plasma gas is introduced to an outer tube of the ICP torch and energy is t... | 06/07/2011 |
| 7833429 | Plasma processing method A plasma processing method for a plasma processing apparatus which includes, a gas ring, a bell jar, an antenna, a sample table, a Faraday shield, and an RF power source circuit for supplying a power source voltage to the antenna and the Faraday shield. The RF power... | 11/16/2010 |
| 7771605 | Laser marking method The invention concerns a method of marking an article using a laser emitting radiation of wavelength λ, the article being formed of a material that is slightly absorbent at said wavelength λ, characterized in that it includes the following main steps: | 08/10/2010 |
| 7767106 | Method of dry etching oxide semiconductor film Provided is a dry etching method for an oxide semiconductor film containing at least In, Ga, and Zn, which includes etching an oxide semiconductor film in a gas atmosphere containing a halogen-based gas. ... | 08/03/2010 |
| 7655152 | Etching An etching method includes applying a first electromagnetic radiation to an area of structure, thereby altering a characteristic of the structure in the area, and applying a second electromagnetic radiation to the structure, the second electromagnetic radiation conf... | 02/02/2010 |
| 7615163 | Film formation apparatus and method of using the same A method of using a film formation apparatus for a semiconductor process includes processing by a cleaning gas a by-product film deposited on an inner surface of a reaction chamber of the film formation apparatus. This step is arranged to supply the cleaning gas int... | 11/10/2009 |
| 7510666 | Time continuous ion-ion plasma An ion-ion plasma source, that features a processing chamber containing a large concentration of halogen or halogen-based gases. A second chamber is coupled to the processing chamber and features an electron source which produces a high energy electron beam. The hig... | 03/31/2009 |
| 7445725 | Surface bonding in halogenated polymeric components Etching the surface (activating the surface) of a halogenated polymer component with an electron beam generates a set of free radical sites in polymeric chains of the surface that sustain for at least 4 hours in an inert environment. The inert environment is provide... | 11/04/2008 |
| 7434719 | Addition of Dto Hto detect and calibrate atomic hydrogen formed by dissociative electron attachment A method of detecting and calibrating dry fluxing metal surfaces of one or more components to be soldered by electron attachment using a gas mixture of reducing gas comprising hydrogen and deuterium, comprising the steps of: a) providing one or more components to be... | 10/14/2008 |
| 7427519 | Method of detecting end point of plasma etching process A method of detecting an end point of a plasma etching process for etching a first layer on a second layer is described, the first layer producing a first etching product and the second layer a second etching product. Time-dependent intensity [Ij=1 to m(t... | 09/23/2008 |
| 7420189 | Ultra precise polishing method and ultra precise polishing apparatus An ultra precise polishing method includes controlling an irradiation time of a surface position of an object to be processed irradiated by a gas cluster ion beam. A profile is created and polished on the surface of the object to be processed by controlling irradiat... | 09/02/2008 |
| 7387738 | Removal of surface oxides by electron attachment for wafer bumping applications The present invention relates to a method for removing metal oxides from a substrate surface. In one particular embodiment, the method comprises: providing a substrate, a first, and a second electrode that reside within a target area; passing a gas mixture comprisin... | 06/17/2008 |
| 7365016 | Anhydrous HF release of process for MEMS devices A method of etching a sacrificial oxide layer covering an etch-stop silicon nitride underlayer, involves exposing the sacrificial oxide to anhydrous HF at a temperature of less than about 100° C. and/or at vacuum level lower than 40 Torr; and subsequently performin... | 04/29/2008 |
| 7365351 | Systems for protecting internal components of a EUV light source from plasma-generated debris Systems and methods are disclosed for protecting an EUV light source plasma production chamber optical element surface from debris generated by plasma formation. In one aspect of an embodiment of the present invention, a shield is disclosed which comprises at least ... | 04/29/2008 |
| 7361605 | System and method for removal of photoresist and residues following contact etch with a stop layer present In processing an integrated circuit structure including a contact arrangement that is initially covered by a stop layer, a first plasma is used to etch to form openings through an overall insulation layer covered by a patterned layer of photoresist such that one con... | 04/22/2008 |
| 7341936 | Semiconductor device and method of manufacturing the same A semiconductor device manufacturing method comprises the steps of forming a metal film (24) on an organic interlayer insulating film (22) formed over a semiconductor substrate to get a metal diffusion preventing metal carbide film (23) on a bou... | 03/11/2008 |
| 7325299 | Method of making a circuitized substrate A method of making a circuitized substrate. A conductive layer having a substantially planar upper surface is formed on and in direct mechanical contact with an upper surface of a substrate. A portion of the conductive layer is removed to form an interim side wall i... | 02/05/2008 |
| 7322368 | Plasma cleaning gas and plasma cleaning method A plasma cleaning gas for CVD chamber is a gas for cleaning silicon-containing deposits on the surface of a CVD chamber inner wall and the surfaces of members placed inside the CVD chamber after film forming treatment on a substrate by a plasma CVD apparatus. The cl... | 01/29/2008 |
| 7311851 | Apparatus and method for reactive atom plasma processing for material deposition Reactive atom plasma processing can be used to shape, polish, planarize, and clean surfaces of difficult materials with minimal subsurface damage. The apparatus and methods use a plasma torch, such as a conventional ICP torch. The workpiece and plasma torch are move... | 12/25/2007 |
| 7306744 | Method of manufacturing a nozzle plate A method of manufacturing a nozzle plate 2 is disclosed. The nozzle plate 2 has a plurality of nozzle openings 22 through each of which a droplet is adapted to be ejected. The method includes the steps of: preparing a processing substrate (silic... | 12/11/2007 |
| 7304263 | Systems and methods utilizing an aperture with a reactive atom plasma torch The footprint of a reactive atom plasma processing tool can be modified using an aperture device. A flow of reactive gas can be injected into the center of an annular plasma. An aperture can be positioned relative to the plasma such that the effective footprint of t... | 12/04/2007 |
| 7303690 | Microlens forming method In a method for forming microlenses, an etching process is performed by using a processing gas on an object to be processed provided with a substrate, a lens material layer formed on the substrate and a mask layer of a lens shape formed on the lens material layer to... | 12/04/2007 |
| 7300684 | Method and system for coating internal surfaces of prefabricated process piping in the field The coating of internal surfaces of a workpiece is achieved by connecting a bias voltage such that the workpiece functions as a cathode and by connecting an anode at each opening of the workpiece. A source gas is introduced at an entrance opening, while a vacuum sou... | 11/27/2007 |
| 7300457 | Self-supporting metallic implantable grafts, compliant implantable medical devices and methods of making same Implantable medical grafts fabricated of metallic or pseudometallic films of biocompatible materials having a plurality of microperforations passing through the film in a pattern that imparts fabric-like qualities to the graft or permits the geometric deformation of... | 11/27/2007 |
| 7301159 | Charged particle beam apparatus and method of forming electrodes having narrow gap therebetween by using the same A focused ion beam apparatus having two pieces of probers brought into contact with two points of a surface of a sample, a voltage source for applying a constant voltage between the two points with which the probers are brought into contact, and an ammeter for measu... | 11/27/2007 |
| 7294207 | Gas-admission element for CVD processes, and device The invention relates to a method for depositing especially, crystalline layers onto especially, crystalline substrates. At least two process gases are led into a process chamber of a reactor separately from each other, through a gas inlet mechanism above a heated s... | 11/13/2007 |
| 7294578 | Use of a plasma source to form a layer during the formation of a semiconductor device A method used to form a semiconductor device having a capacitor comprises placing a semiconductor wafer assembly into a chamber of a plasma source, the wafer assembly comprising a layer of insulation having at least one contact therein and a surface, and further com... | 11/13/2007 |
| 7284307 | Method for manufacturing wiring board A method for manufacturing a wiring board, comprising the steps of: forming a first electrode layer having first and second opening portions, forming a dielectric layer formed on the first electrode layer and having third and fourth opening portions, forming a secon... | 10/23/2007 |
| 7264677 | Process for treating solid surface and substrate surface Ruthenium, osmium and their oxides can be etched simply and rapidly by supplying an atomic oxygen-donating gas, typically ozone, to the aforementioned metals and their oxides through catalysis between the metals and their oxides, and the ozone without any damages to... | 09/04/2007 |
| 7262139 | Method suitable for batch ion etching of copper A method for etching metal deposited on a substrate, the method comprising: depositing a metal layer above a substrate; coating at least a portion of the deposited metal layer with a photo-resist; pattering the photo-resist; etching the deposited metal layer with an... | 08/28/2007 |
| 7247870 | Systems for protecting internal components of an EUV light source from plasma-generated debris Systems and methods are disclosed for protecting an EUV light source plasma production chamber optical element surface from debris generated by plasma formation. In one aspect of an embodiment of the present invention, a shield is disclosed which comprises at least ... | 07/24/2007 |
| 7238294 | Procedure for etching of materials at the surface with focussed electron beam induced chemical reactions at said surface The invention refers to a procedure for etching of materials at the surface by focussed electron beam induced chemical reactions at said surface. The invention is characterized in that in a vacuum atmosphere the material which is to be etched is irradiated with at l... | 07/03/2007 |
| 7237315 | Method for fabricating a resonator A method for fabricating a quartz nanoresonator which can be integrated on a substrate, along with other electronics is disclosed. In this method a quartz substrate is bonded to a base substrate. The quartz substrate is metallized so that a bias voltage is applied t... | 07/03/2007 |
| 7230202 | Plasma processing apparatus, electrode unit, feeder member and radio frequency feeder rod Disclosed herein is a plasma processing apparatus that introduces a process gas into an airtight processing container, that applies a radio frequency power to generate plasma, and that conducts a plasma process to an object to be processed arranged in the processing... | 06/12/2007 |
| 7226640 | Method of fabricating iridium-based materials and structures on substrates A method of forming an iridium-containing film on a substrate, from an iridium-containing precursor thereof which is decomposable to deposit iridium on the substrate, by decomposing the precursor and depositing iridium on the substrate in an oxidizing ambient enviro... | 06/05/2007 |
| 7214325 | Method of fabricating ohmic contact on n-type gallium nitride (GaN) of room temperature by plasma surface treatment Forming low contract resistance metal contacts on GaN films by treating a GaN surface using a chlorine gas Inductively Coupled Plasma (ICP) etch process before the metal contacts are formed. Beneficially, the GaN is n-type and doped with Si, while the metal contacts... | 05/08/2007 |
| 7205237 | Apparatus and method for selected site backside unlayering of si, GaAs, GaAlAsof SOI technologies for scanning probe microscopy and atomic force probing characterization Apparatus for exposure and probing of features in a semiconductor workpiece includes a hollow concentrator for covering a portion of the workpiece connected by a gas conduit to a supply of etchant gas. A stage supports and positions the semiconductor workpiece. Cont... | 04/17/2007 |
| 7201852 | Method for removing defects from silicon bodies by a selective etching process A method for eliminating eruptions, impurities, and/or damage in a crystal lattice by selectively etching silicon elements of surface-plated and sawn-out parts of a silicon wafer. At least areas of the silicon elements are brought into contact with a gaseous etching... | 04/10/2007 |
| 7202170 | Method of improving etching profile of floating gates for flash memory devices A method of forming floating gates for flash memory devices. A plurality of substrates is provided, in which a film to be etched and an overlying masking pattern layer are provided overlying each substrate. Each of the films in a plasma chamber is etched in sequence... | 04/10/2007 |
