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| Number | Title | Issue Date |
| 8083960 | Etching endpoint determination method A microscopic change in a luminous intensity occurring near an etching endpoint is accurately detected, whereby the endpoint of etching is quickly determined. An etching endpoint determination method for determining an endpoint of etching processing in a plasma etch... | 12/27/2011 |
| 8052886 | Plasma etching method and apparatus therefor A fluorine-containing compound gas, e.g., SF6 gas, is converted into a plasma and a silicon portion of an object to be processed is etched by the plasma. At the same time, using a light source having a peak intensity of light in a wavelength range of ligh... | 11/08/2011 |
| 8048326 | Method and apparatus for determining an etch property using an endpoint signal The present invention presents a plasma processing system for etching a layer on a substrate comprising a process chamber, a diagnostic system coupled to the process chamber and configured to measure at least one endpoint signal, and a controller coupled to the diag... | 11/01/2011 |
| 7862736 | Method of cleaning plasma etching apparatus, and thus-cleanable plasma etching apparatus Method of cleaning a plasma etching apparatus capable of suppressing variation in line width among wafers in a single lot, and improving throughput in the cleaning process, includes steps of supplying a cleaning gas into a chamber of a plasma etching apparatus; igni... | 01/04/2011 |
| 7632419 | Apparatus and method for monitoring processing of a substrate Apparatus for in-situ monitoring of a process in a semiconductor wafer processing system consists of a process chamber having a dome, an enclosure disposed above the chamber, a process monitoring assembly positioned proximate the dome, an opening in the dome, and a ... | 12/15/2009 |
| 7494598 | Miniature optically transparent window Miniature optically transparent windows are disclosed that extend vertically from a plane, which may be used to transmit light traveling in a direction substantially parallel with the plane. In one illustrative embodiment, a method for forming such miniature optical... | 02/24/2009 |
| 7481944 | Etch amount detection method, etching method, and etching system This invention accurately detects an etch amount of an etching target layer irrespective of a type of a mask layer. A light La is reflected by an upper surface of a photoresist mask layer 316 and a bottom of a hole H. Thereby a reflected light La1 and ... | 01/27/2009 |
| 7413992 | Tungsten silicide etch process with reduced etch rate micro-loading The embodiments provides an improved tungsten silicide etching process with reduced etch rate micro-loading effect. In one embodiment, a method for etching a layer formed on a substrate is provided. The method includes providing a substrate into a plasma processing ... | 08/19/2008 |
| 7402257 | Plasma state monitoring to control etching processes and across-wafer uniformity, and system for performing same The present invention is generally directed to plasma state monitoring to control etching processes and across-wafer uniformity, and a system for performing same. In one illustrative embodiment, the method comprises generating a plasma within an etching tool, monito... | 07/22/2008 |
| 7399711 | Method for controlling a recess etch process A method of controlling a recess etch process for a multilayered substrate having a trench therein and a column of material deposited in the trench includes determining a first dimension from a surface of the substrate to a reference point in the substrate by obtain... | 07/15/2008 |
| 7396481 | Etching method of organic insulating film This invention relates to a method for etching an organic insulating film used in the production of semiconductor devices. A sample to be etched on which a low dielectric constant organic insulating film is formed is etched by generating a plasma from hydrogen gas a... | 07/08/2008 |
| 7393459 | Method for automatic determination of substrates states in plasma processing chambers A method for automatic determination of a state of a substrate in a plasma processing chamber is provided. Substrate reflectance data is collected in a processing chamber prior to processing to be analyzed with reference reflectance data to determine if the substrat... | 07/01/2008 |
| 7377992 | Method and apparatus for detecting end point A mask layer and a to-be-processed layer are irradiated with light to measure interference light formed of reflected lights from the mask layer and reflected lights from the to-be-processed layer. Thereafter, an interference component brought by the mask layer is re... | 05/27/2008 |
| 7378003 | Thin-film magnetic recording head manufacture using selective imaging A focused particle beam system, according to one embodiment of the invention, precisely shapes a pole-tip assembly formed by a multi-layer device having a first layer with a first structural element, a second layer with a second structural element, and a shielding l... | 05/27/2008 |
| 7371692 | Method for manufacturing a semiconductor device having a W/WN/polysilicon layered film A method for manufacturing a semiconductor device includes the steps of consecutively depositing a Poly-Si layer, a WN layer and a W layer on a SiO2 layer, forming a mask pattern on the W layer, selectively etching the W layer by using plasma in a first e... | 05/13/2008 |
| 7367114 | Method for plasma etching to manufacture electrical devices having circuit protection Methods of manufacturing a variety of circuit protection devices are provided as well as devices so manufactured. In an embodiment, a surface mount electrical device having a substrate and a pair of conductive electrodes connected to an electrical protection compone... | 05/06/2008 |
| 7361286 | Method of detecting etching end-point A method of detecting an etching end-point includes the steps of: forming a mask on a pattern area of an etching object; forming an etching indicator on an etching area of the etching object, which is not covered by the mask; etching the etching object using the mas... | 04/22/2008 |
| 7356580 | Plug and play sensor integration for a process module A process chamber with a computer system that controls the process chamber is connected to one or more sensors, which are used to monitor the process in the process chamber. The sensors are connected to the computer system in a client/server relationship, in a way t... | 04/08/2008 |
| 7354524 | Method and system for processing multi-layer films A method of processing multi-layer films, the method including: (1) processing a plurality of layers according to selected parameters, (2) determining a plurality of optical characteristics each associated with one of the plurality of layers and determined during th... | 04/08/2008 |
| 7335315 | Method and device for measuring wafer potential or temperature The present invention attracts a wafer 6, placed on a susceptor 5, toward the susceptor 5 by the electrostatic attractive power of an electrostatic chuck electrode 7, varies the output voltage of a variable direct current power source ... | 02/26/2008 |
| 7329361 | Method and apparatus for fabricating or altering microstructures using local chemical alterations A method and apparatus for fabricating or altering a microstructure use means for heating to facilitate a local chemical reaction that forms or alters the submicrostructure. ... | 02/12/2008 |
| 7329549 | Monitoring method of processing state and processing unit The present invention is a monitoring method of monitoring a change of a processing state of an object to be processed when a predetermined process is conducted to the object to be processed by using a processing unit. The method includes: a step of respectively set... | 02/12/2008 |
| 7319295 | High-frequency power supply structure and plasma CVD device using the same A radio frequency power supply structure and a plasma CVD device comprising the same are provided in which reflection of radio frequency power at a connecting portion where an RF cable connects to an electrode is reduced so that incidence of the radio frequency powe... | 01/15/2008 |
| 7311947 | Laser assisted material deposition A method of forming a film on a substrate includes activating a gas precursor to form a material on the substrate by irradiating the gas precursor with electromagnetic energy at a frequency tuned to an absorption frequency of the gas precursor. ... | 12/25/2007 |
| 7313454 | Method and apparatus for classifying manufacturing outputs A method for process monitoring involves acquiring data samples associated with a plurality of manufacturing related variables for a plurality of outputs of a manufacturing process. The distance of each data sample relative to every other data sample is then calcula... | 12/25/2007 |
| 7312865 | Method for in situ monitoring of chamber peeling A method for in situ monitoring of particles generated by a reaction by-product film peeling from an interior wall of a reaction chamber of a semiconductor fabrication apparatus to determine reaction chamber condition. The method includes the steps of: exciting the ... | 12/25/2007 |
| 7306746 | Critical dimension control in a semiconductor fabrication process A method for controlling a critical dimension in an etched structure comprises the steps of: forming a hard mask above a substrate, measuring a critical dimension of the hard mask, and using the measured hard mask critical dimension to control a critical dimension t... | 12/11/2007 |
| 7303648 | Via etch process Systems and techniques relating to etching vias in integrated circuit devices, in one implementation, include: providing a dielectric material and a conductive material, removing a first portion of the dielectric material to form a hole in the dielectric material, p... | 12/04/2007 |
| 7297560 | Method and apparatus for detecting endpoint The present invention presents a method for detecting an endpoint of an etch process for etching a substrate in plasma processing system (1) comprising: etching the substrate; measuring at least one endpoint signal; generating at least one filtered endpoint s... | 11/20/2007 |
| 7297287 | Method and apparatus for endpoint detection using partial least squares An apparatus and method for detection of a feature etch completion within an etching reactor. The method includes determining a correlation matrix by recording first measured data regarding a first etch process over successive time intervals to form a first recorded... | 11/20/2007 |
| 7288476 | Controlled dry etch of a film The controlled etch into a substrate or thick homogeneous film is accomplished by introducing a sacrificial film to gauge the depth to which the substrate/thick film has been etched. Optical endpointing the etch of the sacrificial film on the etch stop layer allows ... | 10/30/2007 |
| 7282111 | System and method for monitoring particles contamination in semiconductor manufacturing facilities Provided is a particle monitoring system capable of detecting a level of polymer particle contamination on inner walls of a process chamber. Also disclosed is a method of monitoring the level of polymer particle contamination on inner walls of a process chamber.... | 10/16/2007 |
| 7279114 | Method for stabilizing etching performance The invention is directed to an etching method for patterning a first material layer over a second material layer to expose a portion of the second material layer. The etching method comprises steps of performing a first etching process to remove a portion of the fi... | 10/09/2007 |
| 7268867 | Apparatus and method for inspecting a semiconductor component Examination devices and methods operating with incident light have hitherto been used for the examination of wafers. To allow these devices also to be used with the transmitted-light method, it is proposed to configure the substrate holder (16) so that an ill... | 09/11/2007 |
| 7266418 | Substrate processing apparatus, history information recording method, history information recording program, and history information recording system A substrate processing apparatus, which includes a plurality of process chambers for processing a substrate and a transfer part for carrying in and carrying out the substrate to and from the plurality of process chambers, includes a transfer history recording part, ... | 09/04/2007 |
| 7262864 | Method and apparatus for determining grid dimensions using scatterometry A test structure includes a first plurality of lines and a second plurality of lines intersecting the first plurality of lines. The first and second pluralities of lines defining a grid having openings. A method for determining grid dimensions includes providing a w... | 08/28/2007 |
| 7259104 | Sample surface processing method A surface processing method of a sample having a mask layer that does not contain carbon as a major component formed on a substance to be processed, the substance being a metal, semiconductor and insulator deposited on a silicon substrate, includes the steps of inst... | 08/21/2007 |
| 7241475 | Method for producing carbon surface films by plasma exposure of a carbide compound Reactive halogen-ion plasmas, having for example, generating chloride ions, generated from low-pressure halogen gases using a radio-frequency plasma are employed for producing low-friction carbon coatings, such as a pure carbon film, at or near room temperature on a... | 07/10/2007 |
| 7241397 | Honeycomb optical window deposition shield and method for a plasma processing system An optical window deposition shield including a backing plate having a through hole, and a honeycomb structure having a plurality of adjacent cells configured to allow optical viewing through the honeycomb structure. Each cell of the honeycomb structure has an aspec... | 07/10/2007 |
| 7232526 | Method and apparatus for controlling material removal from semiconductor substrate using induced current endpointing A method and apparatus for controlling the removal of material from a semiconductor substrate in an integrated circuit fabrication process is disclosed. The method and apparatus utilize a light source or charged particle beam (electron or ion beam) to induce a curre... | 06/19/2007 |
