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Microwave Oven With Removable Storage Cassette in Dashboard of Motor Vehicle
A microwave oven adapted for use within a motor vehicle dashboard area. The microwave oven has a removable storage cassette, and slidable platforms for securing and serving containers of beverages and foods.
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| Number | Title | Issue Date |
| 8187483 | Method to minimize CD etch bias The present invention provides a method for improving the critical dimension performance during a plasma etching process of a photolithographic substrate having a thin film. A passivation film is deposited onto the photolithographic substrate using a first set of pr... | 05/29/2012 |
| 8182708 | Method of finishing pre-polished glass substrate surface The present invention is to provide a method by which the waviness generated in a glass substrate surface during pre-polishing are removed and the glass substrate is finished so as to have a highly flat surface. The present invention relates a method of finishing a ... | 05/22/2012 |
| 8158017 | Detection of arcing events in wafer plasma processing through monitoring of trace gas concentrations A method of detecting substrate arcing in a semiconductor plasma processing apparatus is provided. A substrate is placed on a substrate support in a reaction chamber of a plasma processing apparatus. Process gas is introduced into the reaction chamber. A plasma is g... | 04/17/2012 |
| 8158015 | Fitting methodology of etching times determination for a mask to provide critical dimension and phase control The present disclosure provides a mask and a method of determining etching times for etching the mask. In one embodiment, values for a main etching time and an over-etching time are determined simultaneously based on a desired critical dimension (CD) parameter and a... | 04/17/2012 |
| 8158016 | Methods of operating an electromagnet of an ion source Methods of operating an electromagnet of an ion source for generating an ion beam with a controllable ion current density distribution. The methods may include generating plasma in a discharge space of the ion source, generating and shaping a magnetic field in the d... | 04/17/2012 |
| 8147705 | Method of operating ion source and ion implanting apparatus When an ion beam 4 is to be extracted from an ion source 2 by using a gas containing boron trifluoride as an ion source gas 50 for supplying the gas into a plasma chamber 20 for the ion source 2, a bias voltage VB of a p... | 04/03/2012 |
| 8105499 | Transmission electron microscopy sample etching fixture A mask fixture for etching an item includes: a top fixture disposed over the item, including a reservoir centered within the top fixture for containing an etchant; a bottom fixture underneath the item to be etched including a recessed surface area centered within th... | 01/31/2012 |
| 8080168 | Confinement ring drive A confinement assembly for a semiconductor processing chamber is provided. The confinement assembly includes a plurality of confinement rings disposed over each other. Each of the plurality of confinement rings are separated by a space and each of the plurality of c... | 12/20/2011 |
| 8038896 | Plasma processing method and apparatus Plasma processing of plural substrates is performed in a plasma processing apparatus, which is provided with a plasma processing chamber having an antenna electrode and a lower electrode for placing and retaining the plural substrates in turn within the plasma proce... | 10/18/2011 |
| 8038897 | Method and system for wafer inspection A method for inspecting semiconductor wafers patterned by a photomask includes loading a first wafer and scanning a first image of the first wafer, loading a second wafer and scanning a second image of the second wafer, comparing the first and second images, and cla... | 10/18/2011 |
| 8021563 | Etch depth determination for SGT technology A method for determining the depth etch, a method of forming a shielded gate trench (SGT) structure and a semiconductor device wafer are disclosed. A material layer is formed over part of a substrate having a trench. The material fills the trench. A resist mask is p... | 09/20/2011 |
| 8021564 | Method for detecting an end point of resist peeling, method and apparatus for peeling resist, and computer-readable storage medium A method for detecting an end point of a resist peeling process in which a resist is gasified to be peeled off by producing hydrogen radicals by catalytic cracking reaction where a hydrogen-containing gas contacts with a high-temperature catalyst, and contacting the... | 09/20/2011 |
| 8017029 | Plasma mask etch method of controlling a reactor tunable element in accordance with the output of an array of optical sensors viewing the mask backside A plasma etch method includes simultaneously illuminating an array of plural locations on front surface of the workpiece through the backside of the workpiece with light of a wavelength range for which the workpiece is transparent, while viewing light reflected from... | 09/13/2011 |
| 8012366 | Process for etching a transparent workpiece including backside endpoint detection steps A method is provided for defining a pattern on a workpiece such as a transparent substrate or mask or a workpiece that is at least transparent within a range of optical wavelengths. The method includes defining a photoresist pattern on the top surface of the mask, t... | 09/06/2011 |
| 7967995 | Multi-layer/multi-input/multi-output (MLMIMO) models and method for using The invention provides a method of processing a substrate using multilayer processing sequences and Multi-Layer/Multi-Input/Multi-Output (MLMIMO) models and libraries that can include one or more masking layer creation procedures, one or more pre-processing measurem... | 06/28/2011 |
| 7959819 | Method and apparatus for reducing aspect ratio dependent etching in time division multiplexed etch processes The present invention provides a method and an apparatus for reducing aspect ratio dependent etching that is observed when plasma etching deep trenches in a semiconductor substrate through an alternating deposition/etch process. A plurality of different sized featur... | 06/14/2011 |
| 7910013 | Method of controlling a chamber based upon predetermined concurrent behavior of selected plasma parameters as a function of source power, bias power and chamber pressure For each one of plural plasma parameters, such as ion density, wafer voltage, etch rate, wafer current, a relevant surface of constant value is fetched from a memory. The relevant surface of constant value corresponds to a user-selected value of one of the plasma pa... | 03/22/2011 |
| 7892444 | Plasma processing apparatus and method for controlling the same A method for controlling a plasma processing apparatus which includes a vacuum vessel, a first, second and third RF power supply, a first and second electrode, and a phase control unit for controlling a phase difference between a second RF voltage from the second RF... | 02/22/2011 |
| 7883630 | FIB milling of copper over organic dielectrics Apparatus and processes are disclosed for milling copper adjacent to organic low-k dielectric on a substrate by directing a charged-particle beam at a portion of the copper and exposing the copper to a precursor sufficient to enhance removal of the copper relative t... | 02/08/2011 |
| 7875198 | Method of deriving etching correction values for patterns of photomask and method of fabricating photomask A method of deriving etching correction values for the patterns of a photomask and a method of fabricating a photomask are described. The former method includes the following steps. The layout data of the photomask are provided, and local etching correction values o... | 01/25/2011 |
| 7867409 | Control of ion angular distribution function at wafer surface A manufacturing method and apparatus for IC fabrication controls the ion angular distribution at the surface of a wafer with electrodes in a wafer support that produce electric fields parallel to the wafer surface without disturbing plasma parameters beyond the wafe... | 01/11/2011 |
| 7842189 | Treatment device, treatment device consumable parts management method, treatment system, and treatment system consumable parts management method A processing apparatus includes counters each used to measure the length of RF discharge time over which power is applied to a consumable component in correspondence to a specific type of processing executed in a processing chamber, a storage to store wear coefficie... | 11/30/2010 |
| 7815812 | Method for controlling a process for fabricating integrated devices A method for controlling a process for fabricating integrated devices on a substrate. The method includes ex-situ and in-situ measurements of pre-etch and post-etch dimensions for structures formed on the substrate and uses the results of the measurements to adjust ... | 10/19/2010 |
| 7794615 | Plasma processing method and apparatus, and autorunning program for variable matching unit A plasma processing apparatus includes an upper matching unit 44 which is a variable matching unit whose impedance can be varied, and a main controller 100. The upper matching unit 44 includes a controller 104 for variably controlling the... | 09/14/2010 |
| 7785486 | Method of etching structures into an etching body using a plasma Additional variants of the method of etching structures into an etching body, in particular recesses in a silicon body that are laterally defined in a precise manner by an etching mask, using a plasma, is described. In addition, the use of this method in the introdu... | 08/31/2010 |
| 7780864 | Process using combined capacitively and inductively coupled plasma sources for controlling plasma ion radial distribution A method of processing a workpiece in the chamber of a plasma reactor in which the plasma ion density radial distribution in the process region is controlled by adjusting the ratio between the amounts of the (VHF) capacitively coupled power and the inductively coupl... | 08/24/2010 |
| 7727413 | Dual plasma source process using a variable frequency capacitively coupled source to control plasma ion density A method of processing a workpiece in the chamber of a plasma reactor includes introducing a process gas into the chamber, simultaneously (a) capacitively coupling VHF plasma source power into a process region of the chamber that overlies the wafer, and (b) inductiv... | 06/01/2010 |
| 7722778 | Methods and apparatus for sensing unconfinement in a plasma processing chamber Universal plasma unconfinement detection systems configured to detect the plasma unconfinement condition in the plasma processing chamber and methods therefor. The detection systems and methods are designed to reliably and accurately detect the existence of the plas... | 05/25/2010 |
| 7713430 | Using positive DC offset of bias RF to neutralize charge build-up of etch features Apparatus, systems and methods for plasma etching substrates are provided. The invention achieves dissipation of charge build-up on a substrate being plasma etched to avoid notching or twisting in high aspect ratio contents and similar features. Charge build-... | 05/11/2010 |
| 7691278 | Apparatus for the removal of a fluorinated polymer from a substrate and methods therefor An apparatus generating a plasma for removing fluorinated polymer from a substrate is disclosed. The embodiment includes a powered electrode assembly, including a powered electrode, a first dielectric layer, and a first wire mesh disposed between the powered electro... | 04/06/2010 |
| 7678289 | Metrology structure and methods A method of indicating the progress of a sacrificial material removal process, the method, comprising; freeing a portion of a member, the member being disposed in a cage and laterally surrounded by the sacrificial material; and preventing the freed portion of the me... | 03/16/2010 |
| 7674394 | Plasma process for inductively coupling power through a gas distribution plate while adjusting plasma distribution A method of processing a workpiece in the chamber of a plasma reactor includes capacitively coupling plasma source power using a ceiling gas distribution plate as the electrode while inductively coupling plasma source power through the ceiling gas distribution plate... | 03/09/2010 |
| 7601272 | Method and apparatus for integrating metrology with etch processing An apparatus for integrating metrology and etch processing is disclosed. The apparatus comprises a multi-chamber system having a transfer chamber, an etch chamber and a metrology chamber, and a robot configured to transfer a substrate between the etch chamber and th... | 10/13/2009 |
| 7510665 | Plasma generation and control using dual frequency RF signals A method for controlling a plasma in a semiconductor substrate processing chamber is provided. The method includes the steps of supplying a first RF signal to a first electrode within the processing chamber at a first frequency selected to cause plasma sheath oscill... | 03/31/2009 |
| 7479236 | Offset correction techniques for positioning substrates A method for calculating a process center for a chuck in a processing chamber is provided. The method includes generating pre-processing and post-processing measurement data points, which is perform by measuring thickness of a film substrate at a set of orientations... | 01/20/2009 |
| 7462293 | Method and apparatus for measuring electron density of plasma and plasma processing apparatus An apparatus for measuring plasma electron density precisely measures electron density in plasma even under a low electron density condition or high pressure condition. This plasma electron density measuring apparatus includes a vector network analyzer in a measurin... | 12/09/2008 |
| 7452476 | Method for removing coating from power unit components and device for carrying out the method A method for the selective removal of one or more layers from a power unit component, e.g., a turbine blade of a heavy-duty turbine, using high-energy radiation of such a wavelength that the supplied energy is so strongly absorbed by the layer to be removed in each ... | 11/18/2008 |
| 7442318 | Method of making thermal print head A method of manufacturing a thermal print head includes a conductor layer formation step, a first measurement step, a conductor layer splitting step and a second measurement step. In the conductor layer formation step, a single conductor layer including first and se... | 10/28/2008 |
| 7440859 | Method for determining plasma characteristics Methods for determining characteristics of a plasma are provided. In one embodiment, a method for determining characteristics of a plasma includes obtaining metrics of a plasma at two different frequencies, and determining at least one characteristic of the plasma u... | 10/21/2008 |
| 7431859 | Plasma etch process using polymerizing etch gases with different etch and polymer-deposition rates in different radial gas injection zones with time modulation A plasma etch process includes injecting process gases with different compositions of chemical species through different radial gas injection zones of an overhead electrode to establish a desired distribution of chemical species among the plural gas injection zones.... | 10/07/2008 |
