Safety System For Remove a Rider From a Vehicle by Deploying a Parachute
Methods and apparatus for reducing the velocity of a rider in or on an open cockpit vehicle when the rider is thrown from the vehicle.
Make the Most of Our Site
See this month's Top Inventors and Most Cited Patents.
Stay on top of the latest innovations by subscribing to an RSS feed.
Registered users: Manage your profile.
| Number | Title | Issue Date |
| 8182707 | Method for etching a layer on a substrate A method for etching a layer that is to be removed on a substrate, in which a Si1-xGex layer is the layer to be removed, this layer being removed, at least in areas, in gas phase etching with the aid of an etching gas, in particular ClF3 | 05/22/2012 |
| 8137575 | Method for metallizing insulating substrates wherein the roughening and etching processes are controlled by means of gloss measurement The invention relates to a control of etching processes of insulating substrates by means of gloss measurement. By this method a surface roughness can be achieved which leads to good adhesion of metals layers deposited in subsequent metallization steps. This method ... | 03/20/2012 |
| 8119020 | Method for manufacturing electronic device A method for manufacturing an electronic device using a closed-type transport container, includes: controlling relative humidity inside the closed-type transport container to be lower than ambient relative humidity outside the closed-type transport container on a pa... | 02/21/2012 |
| 8097179 | Method for abating effluent from an etching process A method for abating effluent from an etching process in one embodiment includes advancing etch gas product into a passageway of a gas connector in direct fluid communication with a first chamber of an interior void of an apparatus, advancing a gas from a gas source... | 01/17/2012 |
| 8097178 | Surface acoustic wave device and manufacturing method therefor, and communications equipment A surface acoustic wave device configured by forming an oxide layer 2 on a piezoelectric substrate 1 composed of a lithium tantalate single crystal or a lithium niobate single crystal and having weak pyroelectric properties having a lower oxygen conten... | 01/17/2012 |
| 8052885 | Structural modification using electron beam activated chemical etch Structural modification using electron beam activated chemical etch (EBACE) is disclosed. A target or portion thereof may be exposed to a gas composition of a type that etches the target when the gas composition and/or target are exposed to an electron beam. By dire... | 11/08/2011 |
| 8048325 | Method and apparatus for multilayer photoresist dry development A method for etching an organic anti-reflective coating (ARC) layer on a substrate in a plasma processing system comprising: introducing a process gas comprising ammonia (NH3), and a passivation gas; forming a plasma from the process gas; and exposing the... | 11/01/2011 |
| 8034248 | Dry etching method for oxide semiconductor film Provided is a dry etching method for an oxide semiconductor film made of In—Ga—Zn—O, in which an etching gas containing a hydrocarbon is used in a dry etching process for the oxide semiconductor film made of In—Ga—Zn—O formed on a substrate. ... | 10/11/2011 |
| 7985347 | Methods of forming a pattern and methods of manufacturing a capacitor using the same In a method of forming a pattern and a method of forming a capacitor, an oxide layer pattern having an opening is formed on a substrate. A conductive layer is formed on the oxide layer pattern and the bottom and sidewalls of the opening. A buffer layer pattern is fo... | 07/26/2011 |
| 7981305 | High-density field emission elements and a method for forming said emission elements A method for forming high density emission elements and field emission displays formed according to the method. Oxygen and a silicon etchant are introduced into a plasma etching chamber containing a silicon substrate. The oxygen reacts with the silicon surface to fo... | 07/19/2011 |
| 7967994 | Method and apparatus for chalcogenide device formation Chalcogenide devices are delineated and sidewalls of the devices are sealed, in an anaerobic and/or anhydrous environment environment. Throughout the delineation and sealing steps, and any intervening steps, the sidewalls are not exposed to oxygen or water. In an il... | 06/28/2011 |
| 7955512 | Medical devices having textured surfaces Disclosed are medical devices having textured surfaces and related methods for texturing. Methods of surface texturing using gas-phase plasma provide medical devices with myriad complex surface morphologies. ... | 06/07/2011 |
| 7947189 | Vacuum processing apparatus and vacuum processing method of sample A vacuum processing method includes mounting a sample to be processed on a sample mounting surface on a sample holder placed in a vacuum container whose inside can be depressurized, feeding a processing gas and electric field to a space above the sample holder insid... | 05/24/2011 |
| 7919005 | Dry etching method, fine structure formation method, mold and mold fabrication method A WC substrate 7 is etched by using plasma 50 generated from a gas including a chlorine atom. ... | 04/05/2011 |
| 7901587 | Manufacturing method for vibrator After an external shape of a photoresist layer is patterned with use of a Cr film as an underlayer, i.e., a metal film to serve as an anticorrosive film that resists crystal etching, and an Au film as a surface layer, the Au film is etched. After groove portions are... | 03/08/2011 |
| 7883629 | Technique for patterning differently stressed layers formed above transistors by enhanced etch control strategies During the patterning of stressed layers having different types of intrinsic stress, the effects of the deposition of a silicon dioxide based etch indicator material between the first and second dielectric layers may be significantly reduced by a controlled etch on ... | 02/08/2011 |
| 7854853 | Nano fabrication method for glass An exemplary embodiment of the present invention provides a nano fabrication method for a glass, the method including forming a molecule substituting layer on a glass substrate, patterning the molecule substituting layer correspondent to shapes to be patterned on th... | 12/21/2010 |
| 7850864 | Plasma treating apparatus and plasma treating method There are proposed a plasma treating apparatus and a plasma treating method using the same capable of improving the durability of site, member and parts in a chamber used for plasma etching in a corrosive gas atmosphere, which are exposed to the plasma atmosphere, a... | 12/14/2010 |
| 7828985 | Method of producing thin film magnetic head A method of producing a thin film magnetic head includes the steps of: forming a second lower magnetic pole layer in a part on a first lower magnetic pole layer; forming, over the entire wafer surface, an insulating layer so as to be thicker than the thickness of th... | 11/09/2010 |
| 7828986 | Forming surface features using self-assembling masks A method. A combination is provided of a block copolymer and additional material. The copolymer includes a first block of a first polymer covalently bonded to a second block of a second polymer. The additional material is miscible with the first polymer. The first p... | 11/09/2010 |
| 7790049 | Production process of structure A process for producing a structure containing silicon oxide includes a step of forming a first layer of organic spin-on glass on a substrate and a step of forming a second layer of inorganic spin-on glass on the first layer. Thereafter, the first layer is etched by... | 09/07/2010 |
| 7780863 | Method of fabricating hollow waveguide having cyclic geometric structure A waveguide has a hollow center. The waveguide has dielectric tubes which have a geometric arrangement, like a triangle-lattice arrangement. A laser transmitted in the waveguide is confined and is emitted out with a narrow expending angle. Hence, the laser is emitte... | 08/24/2010 |
| 7776226 | Multi-chamber system having compact installation set-up for an etching facility for semiconductor device manufacturing A multi-chamber system of an etching facility for manufacturing semiconductor devices occupies a minimum amount of floor space in a clean room by installing a plurality of processing chambers in multi-layers and in parallel along a transfer path situated between the... | 08/17/2010 |
| 7771604 | Reduced mask count gate conductor definition A combined wide-image and loop-cutter pattern is provided for both cutting and forming a wide-image section to a hard mask on a substrate formed by sidewall imaging techniques in a reduced number of photolithographic steps. A single mask is formed which provides a w... | 08/10/2010 |
| 7767105 | Method of fixing a stator core and an electric compressor A method of fixing a stator core in a cylindrical housing includes the following steps. The first step is a step of blanking a plurality of stator core sheets from an electromagnetic steel sheet by using a die. The die has a circular outside contour for blanking the... | 08/03/2010 |
| 7758761 | Dry etching method, fine structure formation method, mold and mold fabrication method A substance including tungsten and carbon is etched by using plasma. The plasma is generated from a mixed gas of a gas including a fluorine atom and a gas including a CN bond and a hydrogen atom. ... | 07/20/2010 |
| 7758762 | Method for manufacturing an electron-emitting device with first and second carbon films An electron-emitting device comprises a pair of electrodes and an electroconductive film arranged between the electrodes and including an electron-emitting region carrying a graphite film. The graphite film shows, in a Raman spectroscopic analysis using a laser ligh... | 07/20/2010 |
| 7744769 | Gas for removing deposit and removal method using same The invention relates to a gas for removing deposits by a gas-solid reaction. This gas includes a hypofluorite that is defined as being a compound having at least one OF group in the molecule. Various deposits can be removed by the gas, and the gas can easily be mad... | 06/29/2010 |
| 7736528 | Plasma processing apparatus and plasma processing method A tray 15 for a dry etching apparatus 1 has substrate accommodation holes 19A to 19D penetrating thickness direction and a substrate support portion 21 supporting an outer peripheral edge portion of a lower surface 2a | 06/15/2010 |
| 7731862 | Dry etching method, fine structure formation method, mold and mold fabrication method A substance including tungsten and carbon is etched by using plasma. The plasma is generated from a mixed gas of a gas including a fluorine atom, a gas including a nitrogen atom and a gas including a hydrocarbon molecule. ... | 06/08/2010 |
| 7682517 | Method of processing substrate, and method of and program for manufacturing electronic device A method of processing a substrate that enables the amount removed of a surface damaged layer to be controlled easily, and enable a decrease in wiring reliability to be prevented. A surface damaged layer having a reduced carbon concentration of a carbon-containing l... | 03/23/2010 |
| 7674393 | Etching method and apparatus When a substrate is etched by using a processing gas including a first gas containing halogen and carbon and having a carbon number of two or less per molecule, while supplying the processing gas toward the substrate independently from a central and a peripheral por... | 03/09/2010 |
| 7662302 | Lifting and supporting device The invention relates to a lifting and supporting device for handling and positioning particularly large-surface elements in the shape of panels, especially in plasma processing installations. Said lifting and supporting device comprises a particularly metallic base... | 02/16/2010 |
| 7628931 | Processing method for conservation of processing gases In order to facilitate control of a circulating gas, in a processing apparatus 100 having a showerhead 200 for supplying a processing gas into a processing chamber via a plurality of gas supply holes, a turbo pump 120 for evacuating the processi... | 12/08/2009 |
| 7604750 | Method for fabricating semiconductor device A method for fabricating a semiconductor device is provided. The method includes: loading a wafer into a chamber including a ceramic dome coated with a material having etch tolerance against a plasma; etching a gate structure formed on the wafer, thereby generating ... | 10/20/2009 |
| 7534362 | Uniform etching system and process for large rectangular substrates Apparatus and process for controlling etching of silicon-based or organic materials on large rectangular substrates for manufacture of flat panel displays or other devices. The disclosed etching process can remove silicon-based materials or organic polymers with a r... | 05/19/2009 |
| 7520999 | Method of processing a workpiece in a plasma reactor with dynamic adjustment of the plasma source power applicator and the workpiece relative to one another A method for processing a workpiece in a plasma reactor chamber by applying RF source power to inner and outer source power applicators, and introducing a process gas into the reactor while rotating at least one of (a) the workpiece, (b) the outer source power appli... | 04/21/2009 |
| 7497963 | Etching method In this etching method, since an etching gas is introduced before introduction of free radicals into a processing chamber, the etching gas has been adsorbed on the surface of substrates when the free radicals are introduced. Accordingly, the free radicals react with... | 03/03/2009 |
| 7442317 | Method of forming a nozzle rim A method of forming a nozzle rim for a nozzle aperture is provided. The method is suitable for forming part of a printhead fabrication process. The method comprises the steps of: (a) depositing a roof material layer over a sacrificial layer; and (b) removing a first... | 10/28/2008 |
| 7435353 | Patterning by energetically-stimulated local removal of solid-condensed-gas layers and solid state chemical reactions produced with such layers The invention provides a method for forming a patterned material layer on a structure, by condensing a vapor to a solid condensate layer on a surface of the structure and then localized removal of selected regions of the condensate layer by directing a beam of energ... | 10/14/2008 |