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| Number | Title | Issue Date |
| 7531103 | Mask forming method, mask forming functional layer, dry etching method, and method of manufacturing an information recording medium A mask forming method forms an A mask forming functional layer with an amorphous structure so as to cover an etched body, forms a B mask forming functional layer so as to cover the formed A mask forming functional layer, forms a convex/concave pattern in the formed ... | 05/12/2009 |
| 7479235 | Method for etching a workpiece A method for etching an AlTiC workpiece comprises forming a copper mask layer on the AlTiC, lithographically patterning said copper mask layer to thereby expose portions of the AlTiC, reactive ion etching the AlTiC using a process gas comprising argon and fluorine, ... | 01/20/2009 |
| 7425277 | Method for hard mask CD trim Broadly speaking, methods and an apparatus are provided for removing an inorganic material from a substrate. More specifically, the methods provide for removing the inorganic material from the substrate through exposure to a high density plasma generated using an in... | 09/16/2008 |
| 7405161 | Method for fabricating a semiconductor device Method for fabricating a semiconductor device in which a by-product of etching is deposited on a photoresist film for using as a mask. The method for fabricating a semiconductor device includes the steps of depositing a polysilicon, and a bottom anti-refection coati... | 07/29/2008 |
| 7371436 | Method and apparatus for depositing materials with tunable optical properties and etching characteristics A method and system for depositing a film with tunable optical and etch resistant properties on a substrate by plasma-enhanced chemical vapor deposition. A chamber has a plasma source and a substrate holder coupled to a RF source. A substrate is placed on the substr... | 05/13/2008 |
| 7354523 | Methods for sidewall etching and etching during filling of a trench A method for sidewall etching includes providing a substrate having a trench defined therein, with the trench having fill material disposed over a bottom thereof, along a sidewall thereof, and at the trench opening. The fill material along the sidewall of the trench... | 04/08/2008 |
| 7335600 | Method for removing photoresist A method for removing photoresist is described. A substrate having a photoresist to be removed thereon is provided, and then an ashing process is performed to remove most of the photoresist. The substrate is then subjected to a surface treatment that provides suffic... | 02/26/2008 |
| 7334625 | Manufacture of casting cores A method for forming an investment casting core comprises cutting a patterned core precursor from refractory metal-based sheet. The cutting forms recast along the cuts. An oxide is grown on non-recast areas. The recast is substantially chemically removed but substan... | 02/26/2008 |
| 7328418 | Iso/nested control for soft mask processing This method includes a method for etch processing that allows the bias between isolated and nested structures/features to be adjusted, correcting for a process wherein the isolated structures/features need to be smaller than the nested structures/features and wherei... | 02/05/2008 |
| 7326358 | Plasma processing method and apparatus, and storage medium A plasma processing method performs a plasma processing on a substrate mounted on a mounting table installed in an airtight processing chamber, the mounting table having a smaller size than the substrate. The substrate having a surface, on which a resist mark is for... | 02/05/2008 |
| 7316785 | Methods and apparatus for the optimization of etch resistance in a plasma processing system In a plasma processing system, including a plasma processing chamber, a method of optimizing the etch resistance of a substrate material is described. The method includes flowing pre-coat gas mixture into the plasma processing chamber, wherein the pre-coat gas mixtu... | 01/08/2008 |
| 7300883 | Method for patterning sub-lithographic features in semiconductor manufacturing A method of forming a gate electrode (24′) for a metal-oxide-semiconductor (MOS) integrated circuit is disclosed. A hardmask layer (26), for example formed of silicon-rich nitride, is deposited over a polysilicon layer (24) from which the gate... | 11/27/2007 |
| 7294578 | Use of a plasma source to form a layer during the formation of a semiconductor device A method used to form a semiconductor device having a capacitor comprises placing a semiconductor wafer assembly into a chamber of a plasma source, the wafer assembly comprising a layer of insulation having at least one contact therein and a surface, and further com... | 11/13/2007 |
| 7276175 | Semiconductor device fabrication method A semiconductor device fabrication method comprises (1) forming a patterned mask layer on an oxide layer of a Mn-containing perovskite type oxide; (2) heat-treating the oxide layer; and (3) patterning the oxide layer with an etching solution containing at least one ... | 10/02/2007 |
| 7271528 | Uniform emitter array for display devices An emitter array produced using etch mask and a method for making such an etch mask. The emitter comprises a substrate, forming a conducting layer on the substrate, forming an emitting layer on the conducting layer, forming an etch mask having a controlled distribut... | 09/18/2007 |
| 7262068 | Microneedle array module and method of fabricating the same A microneedle array module is disclosed comprising a multiplicity of microneedles affixed to and protruding outwardly from a front surface of a substrate to form the array, each microneedle of the array having a hollow section which extends through its center to an ... | 08/28/2007 |
| 7258966 | Method for manufacturing a diffuser for a backlight module A method for manufacturing a diffuser for a backlight module is disclosed. The method includes providing a transparent substrate; forming a first transparent photoresist layer on the transparent substrate; spreading a plurality of masking particles on the first tran... | 08/21/2007 |
| 7255800 | Wet etching process The present invention illustrates a bulk silicon etching technique that yields straight sidewalls, through wafer structures in very short times using standard silicon wet etching techniques. The method of the present invention employs selective porous silicon format... | 08/14/2007 |
| 7255801 | Deep submicron CMOS compatible suspending inductor A new method is provided for the creation of an inductor. Layers of pad oxide, a thick layer of dielectric and an etch stop layer are successively created over the surface of a substrate. The layers of etch stop material and dielectric are patterned and etched, crea... | 08/14/2007 |
| 7256134 | Selective etching of carbon-doped low-k dielectrics The present invention includes a process for selectively etching a low-k dielectric material formed on a substrate using a plasma of a gas mixture in a plasma etch chamber. The gas mixture comprises a fluorine-rich fluorocarbon or hydrofluorocarbon gas, a nitrogen-c... | 08/14/2007 |
| 7247247 | Selective etching method A selective etching method with lateral protection function is provided. The steps includes: (a) providing a substrate; (b) forming a plurality of tunnels; (c) forming a lateral strengthening structure at a peripheral wall of the tunnels; (d) removing a bottom porti... | 07/24/2007 |
| 7244368 | Manufacturing process of a magnetic head, magnetic head, pattern formation method A manufacturing method of a magnetic head includes a process for forming a lift-off mask pattern on a magnetoresistance effect element, such that the upper part of the lift-off mask pattern is larger in size than the lower part, a process for forming a couple of ele... | 07/17/2007 |
| 7238293 | Slotted substrate and method of making The described embodiments relate to a slotted substrate and methods of forming same. One exemplary method patterns a hardmask on a first substrate surface sufficient to expose a first area of the first surface and forms a slot portion in the substrate through less t... | 07/03/2007 |
| 7226868 | Method of etching high aspect ratio features A plasma processing system for and method of utilizing an improved etch chemistry for effectively etching high aspect ratio silicon features. The process chemistry employs precursor gases suitable for producing a fluorine/chlorine etch chemistry as well as precursor... | 06/05/2007 |
| 7226801 | Sealant region pattern for liquid crystal display and method for fabricating the same A sealant region pattern for a liquid crystal display apparatus and a method for fabricating the same. The method comprises providing a first substrate and a second substrate opposite thereto, forming a predetermined material layer on the first substrate, forming an... | 06/05/2007 |
| 7204932 | Polarization rotators An improved method is provided for fabricating a polarisation rotator in a rib waveguide having a propagation axis and opposite side walls. The method includes etching a pit in the substrate surface to form a recess in one of the side walls of the waveguide, during ... | 04/17/2007 |
| 7186349 | Fluid ejection device and method of fabricating the same A fluid ejection device includes a first substrate having a first crystal orientation, a second substrate having a second crystal orientation, bound to the first substrate, a manifold through the first and second substrates, a chamber formed in the second substrate,... | 03/06/2007 |
| 7185419 | Method of manufacturing a mask for evaporation A mask frame assembly for evaporation includes a mask and a frame which supports the mask. The mask includes a metal layer having a predetermined pattern, and a coating layer which is formed on a surface of the metal layer so as to increase a precision of the predet... | 03/06/2007 |
| 7176142 | Method of manufacturing trench structure for device A porous low-k film, a sacrificial film that can be dissolved in a pure water, an antireflection film and a resist film are successively formed on a dielectric film on a wafer and subsequently exposing the resist film to light in a prescribed pattern and developing ... | 02/13/2007 |
| 7166232 | Method for producing a solid body including a microstructure According to a method for producing a solid body (1) including a microstructure (2), the surface of a substrate (3) is provided with a masking layer (6) that is impermeable to a substance to be applied. The substance is then incorporated ... | 01/23/2007 |
| 7152484 | Sensor for detecting a physical property between two movable bodies having high tribological strain A sensor element (5) detects a physical measurement variable such as a pressure, a temperature, a capacitance, or a gap width between two bodies (10, 20) that move in relation to each other during operation and experience high tribological stress. In c... | 12/26/2006 |
| 7153776 | Method for reducing amine based contaminants A method for reducing resist poisoning is provided. The method includes forming a first structure in a dielectric on a substrate and reducing amine related contaminants from the dielectric and the substrate created after the formation of the first structure. The met... | 12/26/2006 |
| 7153780 | Method and apparatus for self-aligned MOS patterning A method of forming a thin film stack on a substrate, wherein the thin film stack includes at least a polysilicon layer and an oxide layer; forming a hardmask layer on the thin film stack; forming an anti-reflective coating (ARC) layer on the hardmask layer; pattern... | 12/26/2006 |
| 7136155 | Apparatus for measuring oil oxidation using fluorescent light reflected from oil An apparatus for measuring oil oxidation is capable of being mounted to mechanical devices for detecting power of fluorescent light reflected from oil in real time as an indication of the oil oxidation. A plurality of first optical fibers are connected to a light-em... | 11/14/2006 |
| 7119020 | Method for fabricating semiconductor device A silicon oxide film is formed on a semiconductor substrate made of silicon. Subsequently, a resist film containing carbon is formed on the silicon oxide film, and thereafter the formed resist film is patterned, thereby forming a resist pattern. Subsequently, the re... | 10/10/2006 |
| 7112534 | Process for low k dielectric plasma etching with high selectivity to deep uv photoresist A method of forming a microelectronic structure and its associated structures is described. That method comprises forming and patterning a deep uv resist layer on a substrate, etching the substrate in a plasma generated from a gas comprising a carbon to fluorine rat... | 09/26/2006 |
| 7105098 | Method to control artifacts of microstructural fabrication New methods for fabrication of silicon microstructures have been developed. In these methods, an etching delay layer is deposited and patterned so as to provide differential control on the depth of features being etched into a substrate material. Compensation for et... | 09/12/2006 |
| 7087509 | Method of forming a gate electrode on a semiconductor device and a device incorporating same The present invention is directed to a semiconductor device having a gate electrode includes of a plurality of sidewalls, each having a recess formed therein. The present invention is also directed to a method of forming a semiconductor device. In one illustrative e... | 08/08/2006 |
| 7078351 | Photoresist intensive patterning and processing A layer of Anti Reflective Coating (ARC) is first deposited over the surface of a silicon based or oxide based semiconductor surface, a dual hardmask is deposited over the surface of the layer of ARC. A layer of soft mask material is next coated over the surface of ... | 07/18/2006 |
| 7071110 | Process for the plasma etching of materials not containing silicon A process enables plasma etching of materials that do not contain silicon. The process is particularly suitable for the side wall passivation of chromium layers in masks for fabricating semiconductor components. The plasma contains oxygen and/or nitrogen, and at lea... | 07/04/2006 |
