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| Number | Title | Issue Date |
| 8123968 | Multiple deposition for integration of spacers in pitch multiplication process Pitch multiplication is performed using a two step process to deposit spacer material on mandrels. The precursors of the first step react minimally with the mandrels, forming a barrier layer against chemical reactions for the deposition process of the second step, w... | 02/28/2012 |
| 8097177 | Piezoelectric vibrating reed, piezoelectric vibrator, oscillator, electronic device, radio—controlled clock, and method for manufacturing piezoelectric vibrating reed Providing a piezoelectric vibrating reed which is capable of decreasing variation in the amount of etching residue as much as possible and suppressing influence of vibration loss on the vibration characteristics as much as possible. A piezoelectric vibrating reed | 01/17/2012 |
| 8029688 | Method of fine patterning semiconductor device For patterning during integrated circuit fabrication, a first pattern of first masking structures is formed, and a buffer layer is formed on exposed surfaces of the first masking structures. Also, a second pattern of second masking structures is formed in recesses b... | 10/04/2011 |
| 7998357 | Method of fine patterning semiconductor device For integrated circuit fabrication, at least one spacer support structure is formed in a first area over a semiconductor substrate, and a mask material is deposited on exposed surfaces of the spacer support structure and on a second area over the semiconductor subst... | 08/16/2011 |
| 7785484 | Mask trimming with ARL etch A method for etching a dielectric layer disposed below an antireflection layer (ARL) is provided. The method comprises (a) forming a patterned mask with mask features over the ARL, the mask having isolated areas and dense areas of the mask features, (b) trimming and... | 08/31/2010 |
| 7563382 | Mask and method of fabricating the same, and method of machining material A method of fabricating a mask which can endure use for a long time and can be used for forming an isolated pattern with a high aspect ratio. The method includes the steps of: forming a soft material layer by disposing a soft material having positive photo sensitivi... | 07/21/2009 |
| 7425275 | Shadow mask and method of fabricating vertically tapered structure using the shadow mask A method of fabricating a vertically tapered structure. The method includes placing a spacer layer at a predetermined area on a wafer, placing a mask layer at a predetermined area on the spacer layer, and over-etching the spacer layer, by etching a certain area belo... | 09/16/2008 |
| 7396475 | Method of forming stepped structures employing imprint lithography The present invention provides a method for forming a stepped structure on a substrate that features transferring, into the substrate, an inverse shape of the stepped structure disposed on the substrate. ... | 07/08/2008 |
| 7389585 | Method of manufacturing a liquid discharging head A method for forming an ink jet recording head includes at least a step of forming an ink flow path pattern on a substrate by a photodecomposable positive type resist resin, a step of, once executing each of the steps of applying, exposing and baking thereon a nozzl... | 06/24/2008 |
| 7390753 | In-situ plasma treatment of advanced resists in fine pattern definition A novel, in-situ plasma treatment method for eliminating or reducing striations caused by standing waves in a photoresist mask, is disclosed. The method includes providing a photoresist mask on a BARC (bottom anti-reflective coating) layer that is deposited on a fea... | 06/24/2008 |
| 7381343 | Hard mask structure for patterning of materials Techniques for magnetic device fabrication are provided. In one aspect, a method of patterning at least one, e.g., nonvolatile, material comprises the following steps. A hard mask structure is formed on at least one surface of the material to be patterned. The hard ... | 06/03/2008 |
| 7371690 | Dry etching method and apparatus A condition without using Ar as plasma gas is applied to processing of an organic anti-reflection-coating, which suppresses a spatter effect and decreases the cleavage of C—H and OC—O bonds in a resist. As a result, roughness of the resist after processing the a... | 05/13/2008 |
| 7365014 | Reticle fabrication using a removable hard mask We have reduced the critical dimension bias for reticle fabrication. Pattern transfer to the radiation-blocking layer of the reticle substrate essentially depends upon use of a hard mask to which the pattern is transferred from a photoresist. The photoresist pull ba... | 04/29/2008 |
| 7354525 | Specimen surface processing apparatus and surface processing method For a surface processing apparatus using a plasma, a mixed gas of a fluorine-containing gas and an oxygen gas is used as an ashing gas. A mixed gas of an oxygen gas and a fluorine-containing gas is introduced as an ashing gas. This allows the following steps to be c... | 04/08/2008 |
| 7352064 | Multiple layer resist scheme implementing etch recipe particular to each layer Methods of forming a metal line and/or via critical dimension (CD) in a single or dual damascene process on a semiconductor substrate, and the resist scheme implemented, are disclosed. The method includes forming a multiple layer resist scheme including a first plan... | 04/01/2008 |
| 7332098 | Phase shift mask and fabricating method thereof The present invention provides a phase shift mask and fabricating method thereof, by which a critical dimension of a semiconductor pattern can be accurately formed in a manner of compensating a boundary step difference between an active area and an insulating layer.... | 02/19/2008 |
| 7329363 | Method of forming a hydrophobic coating layer on a surface of a nozzle plate for an ink-jet printhead A method of forming a hydrophobic coating layer on a surface of a nozzle plate for an ink-jet printhead includes preparing a nozzle plate having a nozzle, forming a metal layer on a surface of the nozzle plate, forming a material layer covering the metal layer, sele... | 02/12/2008 |
| 7328506 | Method for forming a plated microvia interconnect A method for forming a plated microvia interconnect. An external dielectric layer (EDL) is mounted on a surface of the substrate and is in direct mechanical contact with a conductive element included in the surface. An opening formed in the EDL exposes the conductiv... | 02/12/2008 |
| 7325310 | Method for manufacturing a monolithic ink-jet printhead A method for manufacturing an ink-jet printhead by coating a first photosensitive photoresist on the substrate and forming a passage plate, forming an ink chamber and an ink passage on the passage plate, burying the ink chamber and the ink passage using a second pho... | 02/05/2008 |
| 7326650 | Method of etching dual damascene structure In an etching method for achieving a dual damascene structure by using at least one layer of a low-k film and at least one layer of a hard mask, a dummy film, which is ultimately not left in the dual damascene structure, is formed in at least one layer over the hard... | 02/05/2008 |
| 7314702 | Composition for a bottom-layer resist A composition for a bottom-layer resist, having superior anti-refractivity and dry-etch resistance for use in a bi-layer resist process employing a light source at a wavelength of 193 nm or below, is disclosed. The composition for the bottom-layer resist contains a ... | 01/01/2008 |
| 7312159 | Compositions for dissolution of low-k dielectric films, and methods of use An improved composition and method for cleaning the surface of a semiconductor wafer are provided. The composition can be used to selectively remove a low-k dielectric material such as silicon dioxide, a photoresist layer overlying a low-k dielectric layer, or both ... | 12/25/2007 |
| 7294908 | Method of forming a gate pattern in a semiconductor device A gate pattern having a critical dimension after an etching process of 60-70nm may be formed using an ArF photoresist as an etching mask by a method including sequentially forming a gate oxide layer, a gate electrode layer, an anti-reflection coating layer, and an A... | 11/13/2007 |
| 7282447 | Method for an integrated circuit contact A process is provided for forming vertical contacts in the manufacture of integrated circuits and devices. The process eliminates the need for precise mask alignment and allows the etch of the contact hole to be controlled independent of the etch of the interconnect... | 10/16/2007 |
| 7281316 | Perpendicular pole structure and method of fabricating the same A magnetic structure, such as a pole tip, and method for forming the same includes forming a pole tip layer of magnetic material. A layer of polyimide precursor material is added above the pole tip layer and cured. A silicon-containing resist layer is added above th... | 10/16/2007 |
| 7270761 | Fluorine free integrated process for etching aluminum including chamber dry clean A fluorine-free integrated process for plasma etching aluminum lines in an integrated circuit structure including an overlying anti-reflection coating (ARC) and a dielectric layer underlying the aluminum, the process being preferably performed in a single plasma rea... | 09/18/2007 |
| 7265058 | Method of manufacturing semiconductor device A method of manufacturing a semiconductor device comprises, in patterning of a conductive film having a grain boundary on a very thin dielectric film, a first etching step of carrying out anisotropic etching until most of the conductive film in a flat portion disapp... | 09/04/2007 |
| 7255799 | Method for selectively covering a micro machined surface On a die that has etchings on a surface, firstly a sheet of negative photoresist is laid down which, by means of an exposure and subsequent development, is left only above the etchings; then, upon the negative photoresist, a positive photoresist is applied, which is... | 08/14/2007 |
| 7244368 | Manufacturing process of a magnetic head, magnetic head, pattern formation method A manufacturing method of a magnetic head includes a process for forming a lift-off mask pattern on a magnetoresistance effect element, such that the upper part of the lift-off mask pattern is larger in size than the lower part, a process for forming a couple of ele... | 07/17/2007 |
| 7235348 | Water soluble negative tone photoresist In accordance with the objectives of the invention a new water soluble negative photoresist is provided for packing-and-unpacking (PAU) processing steps. ... | 06/26/2007 |
| 7223661 | Method of manufacturing semiconductor device The method includes forming an isolation film on a silicon substrate to define an active region; forming an antireflective film on an entire surface of the substrate containing the isolation film; forming a photosensitive film pattern on the antireflective film whil... | 05/29/2007 |
| 7208423 | Semiconductor device fabrication method and semiconductor device A resist pattern (5) is formed in a dimension of a limitation of an exposure resolution over a hard mask material film (4) over a work film (3). The material film (4) is processed using the resist pattern (5) as a mask. A hard mask... | 04/24/2007 |
| 7205228 | Selective metal encapsulation schemes A method and system of processing a semiconductor substrate includes, in one or more embodiments, depositing a protective layer on the substrate surface comprising a conductive element disposed in a dielectric material; processing the protective layer to expose the ... | 04/17/2007 |
| 7194798 | Method for use in making a write coil of magnetic head Methods suitable for use in making a write coil of a magnetic head includes the steps of forming a seed layer made of ruthenium (Ru) over a substrate; forming, over the seed layer, a patterned resist having a plurality of write coil trenches patterned therein; elect... | 03/27/2007 |
| 7187179 | Wiring test structures for determining open and short circuits in semiconductor devices A wiring test structure includes a plurality of wiring traces configured in an interleaving spiral pattern. At least one of the plurality of wiring traces configured for open circuit testing therein, and at least a pair of the plurality of wiring traces is configure... | 03/06/2007 |
| 7186348 | Method for fabricating a pole tip in a magnetic transducer A method for fabricating a magnetic head with a trapezoidal shaped pole piece tip is described. The body of the main pole piece is deposited, then one or more layers for the pole piece tip are deposited. A bed material is deposited over the pole piece tip material. ... | 03/06/2007 |
| 7183201 | Selective etching of organosilicate films over silicon oxide stop etch layers A method of selectively etching organosilicate layers in integrated circuit fabrication processes is disclosed. The organosilicate layers are selectively etched using a hydrogen-containing fluorocarbon gas. The hydrogen-containing fluorocarbon gas may be used to sel... | 02/27/2007 |
| 7179396 | Positive tone bi-layer imprint lithography method The present invention provides a method to pattern a substrate which features creating a multi-layered structure by forming, on the substrate, a patterned layer having protrusions and recessions. Formed upon the patterned layer is a conformal layer, with the multi-l... | 02/20/2007 |
| 7160806 | Thermal inkjet printhead processing with silicon etching A method of etching the trench portions of a thermal inkjet printhead using a robust mask that precisely defines the area of the substrate surface to be etched and that protects the adjacent drop generator components from damaging exposure to the silicon etchant. Th... | 01/09/2007 |
| 7153782 | Effective solution and process to wet-etch metal-alloy films in semiconductor processing A solution and method is described for etching TaN, TiN, Cu, FSG, TEOS, and SiN on a silicon substrate in silicon device processing. The solution is formed by combining HF at 49% concentration with H2O2 at 29%–30% concentration in deionized w... | 12/26/2006 |
