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| Number | Title | Issue Date |
| 8137574 | Processing method of glass substrate, and highly flat and highly smooth glass substrate The present invention is to provide a processing method for manufacturing a highly flat and highly smooth glass substrate with good productivity. A highly flat and highly smooth glass substrate is obtained with good productivity by processing of a glass substrate, w... | 03/20/2012 |
| 8029687 | Polishing slurry, production method of glass substrate for information recording medium and production method of information recording medium The present invention provides a low-cost polishing slurry having excellent effect with respect to defects and smoothness of the surface to be polished. The polishing slurry comprises a silica abrasive and a ceria abrasive, wherein the silica abrasive content is les... | 10/04/2011 |
| 7955510 | Oxide etch with NH4-NF3 chemistry The present invention generally provides apparatus and methods for selectively removing various oxides on a semiconductor substrate. One embodiment of the invention provides a method for selectively removing an oxide on a substrate at a desired removal rate using an... | 06/07/2011 |
| 7771603 | Process for polishing glass substrate A process for polishing a glass substrate, which enables to polish a glass substrate having a large waviness formed by mechanical polishing, to have a surface excellent in flatness, is provided. A process for polishing a glass substrate, comprising a step of ... | 08/10/2010 |
| 7544305 | Chemical mechanical polishing process for forming shallow trench isolation structure A shallow trench isolation (STI) multistage chemical mechanical polishing (CMP) method for forming a shallow trench isolation structure is provided. The substrate comprising a dense region and an isolation region, a silicon nitride layer formed over the substrate, a... | 06/09/2009 |
| 7494597 | Method and apparatus for etching disk-like member Disclosed are a method and apparatus for etching disk-shaped members, especially a method and apparatus for etching semiconductor wafers. In a method wherein wafers (30) are rotated and etched in an etching chamber (12) which is filled with an etching ... | 02/24/2009 |
| 7413988 | Method and apparatus for detecting planarization of metal films prior to clearing A method for planarizing a semiconductor substrate is provided. The method initiates with tracking a signal corresponding to a thickness of a conductive film disposed on the semiconductor substrate. Then, a second derivative is calculated from data representing the ... | 08/19/2008 |
| 7402529 | Method of applying cladding material on conductive lines of MRAM devices A method of fabricating a cladding region for use in MRAM devices includes the formation of a conductive bit line proximate to a magnetoresistive memory device. The conductive bit line is immersed in a first bath containing dissolved ions of a first conductive mater... | 07/22/2008 |
| 7383629 | Method of making circuitized substrates utilizing smooth-sided conductive layers as part thereof A circuitized substrate in which two conductive layers (e.g., electroplated copper foil) are bonded (e.g., laminated) to an interim dielectric layer. Each of the two foil surfaces which physically bond to the dielectric are smooth (e.g., preferably by chemical proce... | 06/10/2008 |
| 7377836 | Versatile wafer refining Methods of refining using a plurality of refining elements are discussed. A refining apparatus having refining elements that can be smaller than the workpiece being refined are disclosed. New refining methods, refining apparatus, and refining elements disclosed. Met... | 05/27/2008 |
| 7378029 | Method for manufacturing magnetic recording medium A method for manufacturing a magnetic recording medium is provided, by which a magnetic recording medium having a recording layer formed in a concavo-convex pattern, a sufficiently flat surface, and high recording and reproducing precision is efficiently manufacture... | 05/27/2008 |
| 7354850 | Directionally controlled growth of nanowhiskers Nanowhiskers are grown in a non-preferential growth direction by regulation of nucleation conditions to inhibit growth in a preferential direction. In a preferred implementation, III-V semiconductor nanowhiskers are grown on an (001) III-V semiconductor substr... | 04/08/2008 |
| 7348275 | Processing method for semiconductor wafer A processing method for a semiconductor wafer which is generally circular, and which has on the face thereof an annular surplus region present in an outer peripheral edge portion of the face, and a circular device region surrounded by the surplus region, the device ... | 03/25/2008 |
| 7341502 | Methods and systems for planarizing workpieces, e.g., microelectronic workpieces Planarizing workpieces, e.g., microelectronic workpieces, can employ a process indicator which is adapted to change an optical property in response to a planarizing condition. This process indicator may, for example, change color in response to reaching a particular... | 03/11/2008 |
| 7342638 | Electro-optical device, method of manufacturing the same, and method of manufacturing substrate device According to an aspect of the invention, to completely planarize the outermost surface of a laminated structure by appropriately performing a planarizing process, such as a CMP process, in an electro-optical device, such as a liquid crystal device, an electro-optica... | 03/11/2008 |
| 7338908 | Method for fabrication of semiconductor interconnect structure with reduced capacitance, leakage current, and improved breakdown voltage An etching process for selectively etching exposed metal surfaces of a substrate and forming a conductive capping layer over the metal surfaces is described. In some embodiments, the etching process involves oxidation of the exposed metal to form a metal oxide that ... | 03/04/2008 |
| 7338610 | Etching method for manufacturing semiconductor device A wafer having a dielectric layer and an electrode partially protruding from the top surface of the dielectric layer is provided. The dielectric layer is etched with a chemical solution such as LAL. Prior to etching, the protruding portion of the electrode is remove... | 03/04/2008 |
| 7339762 | Magnetic recording and reading device A magnetic recording and reading device includes a magnetic recording medium having a substrate and at least one magnetic recording layer formed above the substrate, a magnetic head enabling a data transfer rate of more than 50 MB/s and a recording density of more t... | 03/04/2008 |
| 7335600 | Method for removing photoresist A method for removing photoresist is described. A substrate having a photoresist to be removed thereon is provided, and then an ashing process is performed to remove most of the photoresist. The substrate is then subjected to a surface treatment that provides suffic... | 02/26/2008 |
| 7332437 | Method for processing semiconductor wafer and semiconductor wafer There is provided a method for processing a semiconductor wafer subjected to a chamfering process, a lapping process, an etching process, and a mirror-polishing process, wherein acid etching is performed after alkaline etching as the etching process, and the acid et... | 02/19/2008 |
| 7323080 | Apparatus for treating substrate The present is directed to an apparatus for etching the top edge and bottom of a wafer. The apparatus includes a substrate support part for supporting a wafer and a movable protect part for preventing fluid for an etch from flowing into a non-etch portion of the waf... | 01/29/2008 |
| 7311851 | Apparatus and method for reactive atom plasma processing for material deposition Reactive atom plasma processing can be used to shape, polish, planarize, and clean surfaces of difficult materials with minimal subsurface damage. The apparatus and methods use a plasma torch, such as a conventional ICP torch. The workpiece and plasma torch are move... | 12/25/2007 |
| 7309449 | Substrate processing method A substrate processing enables etching of a barrier metal film at around room temperature without application of a mechanical load and without excessive etching of a necessary portion of copper. The substrate processing flattens a copper film and a barrier metal fil... | 12/18/2007 |
| 7307013 | Nonselective unpatterned etchback to expose buried patterned features A method for etching to form a planarized surface is disclosed. Spaced-apart features are formed of a first material, the first material either conductive or insulating. A second material is deposited over and between the first material. The second material is eithe... | 12/11/2007 |
| 7304263 | Systems and methods utilizing an aperture with a reactive atom plasma torch The footprint of a reactive atom plasma processing tool can be modified using an aperture device. A flow of reactive gas can be injected into the center of an annular plasma. An aperture can be positioned relative to the plasma such that the effective footprint of t... | 12/04/2007 |
| 7301779 | Electronic chip and electronic chip assembly A multiplicity of nanotubes are applied to at least one external chip metal contact of an electronic chip in order to make contact between the electronic chip and a further electronic chip. ... | 11/27/2007 |
| 7300595 | Method for filling concave portions of concavo-convex pattern and method for manufacturing magnetic recording medium A method for filling concave portions of a concavo-convex pattern by which the concave portions of the concavo-convex pattern can be filled to flatten the surface with reliability, and a method for manufacturing a magnetic recording medium by which a magnetic record... | 11/27/2007 |
| 7288206 | High-purity alkali etching solution for silicon wafers and use thereof A high-purity alkali etching solution for silicon wafers results in silicon wafers with extremely low metal impurity contamination, and excellent surface flatness. The alkali etching solution contains sodium hydroxide containing 1 ppb or less of the elements Cu, Ni,... | 10/30/2007 |
| 7281317 | Manufacturing method of flying magnetic head slider A manufacturing method of a flying magnetic head slider includes a step of providing a substrate with a plurality of inductive write head elements formed thereon, each head element having a pair of magnetic poles facing to each other via a magnetic gap, and with a p... | 10/16/2007 |
| 7279115 | Method to reduce stacking fault nucleation sites and reduce V drift in bipolar devices A method is disclosed for preparing a substrate and epilayer for reducing stacking fault nucleation and reducing forward voltage (Vf) drift in silicon carbide-based bipolar devices. The method includes the steps of etching the surface of a silicon carbide... | 10/09/2007 |
| 7273788 | Ultra-thin semiconductors bonded on glass substrates A method for forming a semiconductor on insulator structure includes providing a glass substrate, providing a semiconductor wafer, and performing a bonding cut process on the semiconductor wafer and the glass substrate to provide a thin semiconductor layer bonded to... | 09/25/2007 |
| 7273563 | Method for manufacturing a magnetic recording medium A method for manufacturing a magnetic recording medium is provided, which can efficiently manufacture a magnetic recording medium that includes a recording layer formed in a concavo-convex pattern and has good recording and reproduction characteristics. The method i... | 09/25/2007 |
| 7264742 | Method of planarizing a surface A method for removing at least a portion of a structure, such as a layer, film, or deposit, including ruthenium metal and/or ruthenium dioxide includes contacting the structure with a material including ceric ammonium nitrate. A material for removing ruthenium metal... | 09/04/2007 |
| 7264850 | Process for treating a substrate with a plasma A process for depositing a diamond-like carbon film, which comprises providing a means for generating a sheet-like beam-type plasma region inside a vacuum vessel for depositing the diamond-like carbon film, and depositing the film on a substrate being moved through ... | 09/04/2007 |
| 7261829 | Method for masking a recess in a structure having a high aspect ratio A method for selective masking is described. In this case, a filling material is applied to a structure which, as a function of the aspect ratio of the structure, forms cavities when the aspect ratio is high. The filling layer is then removed as far as the cavities ... | 08/28/2007 |
| 7262975 | Multilayer printed wiring board A multilayer printed wiring board 10 includes: a build-up layer 30 that is formed on a core substrate 20 and has a conductor pattern 32 disposed on an upper surface; a low elastic modulus layer 40 that is formed on the build-up lay... | 08/28/2007 |
| 7255803 | Method of forming contact openings The invention includes etching and contact opening forming methods. In one implementation, a plasma etching method includes providing a bottom powered plasma chamber that includes a plasma generating electrode powerable at different first and second frequencies, wit... | 08/14/2007 |
| 7253047 | Semiconductor processing methods of forming transistors, semiconductor processing methods of forming dynamic random access memory circuitry, and related integrated circuitry Semiconductor processing methods of forming transistors, semiconductor processing methods of forming dynamic random access memory circuitry, and related integrated circuitry are described. In one embodiment, active areas are formed over a substrate, with one of the ... | 08/07/2007 |
| 7250369 | Materials for polishing liquid for metal, polishing liquid for metal, method for preparation thereof and polishing method using the same Provided are a metal-polishing liquid that comprises an oxidizing agent, an oxidized-metal etchant, a protective film-forming agent, a dissolution promoter for the protective film-forming agent, and water; a method for producing it; and a polishing method of using i... | 07/31/2007 |
| 7246424 | Magnetic devices having magnetic features with CMP stop layers A magnetic device having a magnetic feature, the magnetic feature including a magnetic portion comprising a magnetic material, a region of non-magnetic material adjacent to the magnetic portion, and a stop layer disposed above the region of non-magnetic material, de... | 07/24/2007 |
