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| Number | Title | Issue Date |
| 7425278 | Process of etching a titanium/tungsten surface and etchant used therein An etchant which includes an aqueous solution of between about 30% and about 38% concentrated hydrogen peroxide, said percentages being by volume, based on the total volume of the solution; between about 3.5 ml and about 20 ml per liter of phosphoric acid; and an am... | 09/16/2008 |
| 7422696 | Multicomponent nanorods Multicomponent nanorods having segments with differing electronic and/or chemical properties are disclosed. The nanorods can be tailored with high precision to create controlled gaps within the nanorods or to produce diodes or resistors, based upon the identities of... | 09/09/2008 |
| 7404910 | Etching solution, etched article and method for etched article An etching solution which contains hydrogen fluoride (HF) and exhibits an etching rate ratio: etching rate for a boron-glass film (BSG) or boron-phosphorus-glass film (BPSG)/etching rate for a thermally oxidized film (THOX) of 10 or more at 25° C. ... | 07/29/2008 |
| 7399430 | Method for manufacturing phosphor, phosphor and plasma display panel It is an object of the present invention to control damage of a phosphor caused by an etching solution. Disclosed is a method of manufacturing a phosphor having the steps of: (a) crushing phosphor particles via a crushing treatment process, and (b) surface-treating ... | 07/15/2008 |
| 7368065 | Implants with textured surface and methods for producing the same Compositions and methods are provided for preparing a metal substrate having a uniform textured surface with a plurality of indentations with a diameter in the nanometer and micrometer range. The textured surface is produced by exposing the substrate to an etching f... | 05/06/2008 |
| 7358196 | Wet chemical treatment to form a thin oxide for high k gate dielectrics Described herein are methods of forming a thin silicon dioxide layer having a thickness of less than eight angstroms on a semiconductor substrate to form the bottom layer of a gate dielectric. A silicon dioxide layer having a thickness of less than eight angstroms m... | 04/15/2008 |
| 7335789 | Process for the mononitration of alkanediols A process for the preparation of compounds of formula (I): HO-A-ONO2 (I) wherein A is a C2-C6 alkylene chain, the compounds of formula (I) being synthesized by nitration of the corresponding alkanediols with ... | 02/26/2008 |
| 7316784 | Method of patterning transparent conductive film, thin film transistor substrate using the same and fabricating method thereof A method of patterning a transparent conductive film adaptive for selectively etching a transparent conductive film without any mask processes, a thin film transistor for a display device using the same and a fabricating method thereof are disclosed. In the method o... | 01/08/2008 |
| 7312152 | Lactate-containing corrosion inhibitor The corrosion of aluminum-based metal films may be minimized by applying a lactate-containing solution to the aluminum-based metal films before the aluminum-based metal films are etched. The lactate-containing solution is applied to the aluminum-based metal film bef... | 12/25/2007 |
| 7306681 | Method of cleaning a semiconductor substrate A cleaning method and cleaning recipes are disclosed. The present invention relates to a method for cleaning a semiconductor substrate and cleaning recipes. The present invention utilizes a first cleaning solution including diluted hydrofluoric acid and a second cle... | 12/11/2007 |
| 7285229 | Etchant and replenishment solution therefor, and etching method and method for producing wiring board using the same An etchant of the present invention includes an aqueous solution containing hydrochloric acid, nitric acid, and a cupric ion source. An etching method of the present invention includes bringing the etchant into contact with at least one metal selected from nickel, c... | 10/23/2007 |
| 7276175 | Semiconductor device fabrication method A semiconductor device fabrication method comprises (1) forming a patterned mask layer on an oxide layer of a Mn-containing perovskite type oxide; (2) heat-treating the oxide layer; and (3) patterning the oxide layer with an etching solution containing at least one ... | 10/02/2007 |
| 7276180 | Chemical mechanical polishing composition and process A composition for chemical mechanical polishing includes a slurry. A sufficient amount of a selectively oxidizing and reducing compound is provided in the composition to produce a differential removal of a metal and a dielectric material. A pH adjusting compound adj... | 10/02/2007 |
| 7276449 | Gas assisted method for applying resist stripper and gas-resist stripper combinations A method for moving resist stripper across the surface of a semiconductor substrate includes applying a wet chemical resist stripper, such as an organic or oxidizing wet chemical resist stripper, to at least a portion of a photomask positioned over the semiconductor... | 10/02/2007 |
| 7270764 | Method for removing aluminide coating from metal substrate and turbine engine part so treated A method for selectively removing an aluminide coating from at least one surface of a metal-based substrate by: (a) contacting the surface of the substrate with at least one stripping composition comprising nitric acid at a temperature less than about 20° C. to deg... | 09/18/2007 |
| 7250348 | Apparatus and method for packaging semiconductor devices using a patterned photo sensitive film to reduce stress buffering A method and apparatus for packaging semiconductor devices using patterned laminate films to reduce stress buffering. The method includes fabricating a semiconductor die having thin film resistors and bond pads formed on an active surface. A film layer is formed ont... | 07/31/2007 |
| 7247208 | Microelectronic cleaning compositions containing ammonia-free fluoride salts Ammonia-free, HF-free cleaning compositions for cleaning photoresist and plasma ash residues from microelectronic substrates, and particularly to such cleaning compositions useful with and having improved compatibility with microelectronic substrates characterized b... | 07/24/2007 |
| 7238291 | Method for removing oxides from a Ge semiconductor substrate surface This invention relates to a method for removing oxides from the surface of a Ge semiconductor substrate comprising the step of subjecting the surface to a Ge oxide etching solution characterized in that the Ge oxide etching solution removes Ge oxides and Ge sub-oxid... | 07/03/2007 |
| 7232478 | Adhesion promotion in printed circuit boards An adhesion promotion process and composition for enhancing adhesion between a copper conducting layer and a dielectric material during manufacture of a printed circuit board. The composition contains a corrosion inhibitor, an inorganic acid, and an alcohol which is... | 06/19/2007 |
| 7226513 | Silicon wafer cleaning method This invention provides a cleaning method of silicon wafer for obtaining a silicon wafer in which micro roughness thereof under spatial frequency of 20/μm is 0.3 to 1.5 nm3 in terms of power spectrum density, by passing a process of oxidizing the silicon... | 06/05/2007 |
| 7217499 | Aluminum support for lithographic printing plate and base plate for lithographic printing plate An object of the present invention is to provide a support for lithographic printing plates provided with a photosensitive layer containing an acid generator and an acid-decomposable compound, that offers superior sensitivity, chemical resistance, print durability, ... | 05/15/2007 |
| 7217464 | Method of manufacturing electrodeposited copper foil with carrier foil for high-temperature heat-resistance and electrodeposited copper foil with carrier foil for high-temperature heat-resistance obtained by the manufacturing method The object is to provide a method of manufacturing electrodeposited copper foil with a carrier foil for high-temperature heat-resistance in which the peeling of the carrier foil is easy even by press working at temperatures of not less than 200°C. For this purpose ... | 05/15/2007 |
| 7213336 | Hyperbga buildup laminate A method and structure for forming an electronic structure that comprises a redistribution structure on a circuitized substrate. The redistribution structure includes N dielectric layers (N≧2) and N metal planes formed in the following sequence: dielectric layer | 05/08/2007 |
| 7211200 | Manufacture and cleaning of a semiconductor Metal nitride and metal oxynitride extrusions often form on metal silicides. These extrusions can cause short circuits and degrade processing yields. The present invention discloses a method of selectively removing such extrusions. In one embodiment, a novel wet etc... | 05/01/2007 |
| 7208454 | Cleaning solution for removing anti-reflective coating composition A cleaning solution for a cured anti-reflective layer (AFC layer) component and a method of cleaning an anti-reflective layer component by using the same, wherein the cleaning solution comprises about 5–30% by weight of ammonium hydroxide, about 23–70% by weight... | 04/24/2007 |
| 7192489 | Method for polymer residue removal following metal etching A method for removing polymer containing residues from a semiconductor wafer including metal containing features including providing a semiconductor wafer having a process surface including metal containing features said process surface at least partially covered wi... | 03/20/2007 |
| 7169710 | Wiring and method of manufacturing the same, and wiring board and method of manufacturing the same The wiring of the present invention has a layered structure that includes a first conductive layer (first layer) having a first width and made of one or a plurality of kinds of elements selected from W and Mo, or an alloy or compound mainly containing the element, a... | 01/30/2007 |
| 7118685 | Polishing liquid composition A polishing liquid composition is applicable as a means of forming embedded metal interconnections on a semiconductor substrate. In a surface to be polished comprising an insulating layer and a metal interconnection layer, the polishing liquid composition is capable... | 10/10/2006 |
| 7115212 | Method for etching A method of etching a metal oxide film includes depositing a metal (M) on the metal oxide film and contacting the metal oxide film and the metal (M) with an etch liquid comprising an acid (A) and a metal dissolution agent (X). The method can avoid patchwise etch. | 10/03/2006 |
| 7087183 | Method of using an etchant solution for removing a thin metallic layer A method for removing a thin metallic layer using an etchant solution is provided for essentially eliminating undercutting in a thin metallic layer such as a seed layer in a magnetic recording head. The etchant solution has a suitable solvent additive such as glycer... | 08/08/2006 |
| 7087996 | Etchant formulation for selectively removing thin films in the presence of copper, tin, and lead The invention relates to a ball-limiting metallurgy (BLM) etching system and process. The BLM stack is provided for an electrical device that contains an aluminum layer disposed upon a metal first layer. A metal upper layer is disposed above the metal second layer, ... | 08/08/2006 |
| 7077975 | Methods and compositions for removing group VIII metal-containing materials from surfaces A method and composition for removing Group VIII metal-containing materials from a surface (preferably, a platinum-containing, and more preferably, a platinum-rhodium-containing surface) involves the use of a mixture of phosphoric acid, sulfuric acid, nitric acid, a... | 07/18/2006 |
| 7069645 | Method for producing a circuit board A method for producing a circuit board having a metal circuit pattern on an insulating substrate is provided, including the steps of joining a metal plate onto a surface of the insulating substrate using a hard brazing member containing an active element and removin... | 07/04/2006 |
| 7067015 | Modified clean chemistry and megasonic nozzle for removing backside CMP slurries A cleaning chemistry for lowering defect levels on the backside of a semiconductor wafer after chemical mechanical planarization (CMP). In a preferred embodiment of the present invention, a cleaning chemistry comprising nitric acid, hydrofluoric acid, and phosphoric... | 06/27/2006 |
| 7041231 | Method of refurbishing a transition duct for a gas turbine system A method of refurbishing a transition duct (100) for a gas turbine system includes providing the transition duct. The transition duct has a first wall (221) defining a first passageway (110) and having holes (223) through a metal layer ( | 05/09/2006 |
| 7033519 | Method of fabricating sub-micron structures in transparent dielectric materials A sub-micron structure is fabricated in a transparent dielectric material by focusing femtosecond laser pulses into the dielectric to create a highly tapered modified zone with modified etch properties. The dielectric material is then selectively etched into the mod... | 04/25/2006 |
| 7022254 | Chromate-free method for surface etching of titanium Non-chromate solutions for treating and/or etching metals, particularly, aluminum, aluminum alloys, steel and titanium, and method of applying same wherein the solutions include either a titanate or titanium dioxide as a “drop-in replacement” for a chromium-cont... | 04/04/2006 |
| 7001533 | Chromate-free method for surface etching of aluminum and aluminum alloys Non-chromate solutions for treating and/or etching metals, particularly, aluminum, aluminum alloys, steel and titanium, and method of applying same wherein the solutions include either a titanate or titanium dioxide as a “drop-in replacement” for a chromium-cont... | 02/21/2006 |
| 6995084 | Method for forming robust solder interconnect structures by reducing effects of seed layer underetching A method for forming an interconnect structure for a semiconductor device includes defining a via in a passivation layer so as expose a top metal layer in the semiconductor device. A seed layer is formed over the passivation layer, sidewalls of the via, and the top ... | 02/07/2006 |
| 6960370 | Methods of forming medical devices Medical devices that include oxidizable portions can be plated after a two step activation process that includes successive applications of two aqueous solutions of ammonium bifluoride. Once plated, such materials can be soldered using conventional solders and fluxe... | 11/01/2005 |
