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Cloaking System Using Optoelectronically Controlled Camouflage
A Cloaking System designed to operate in the visible light spectrum, utilizes optoelectronics and/or photonic components to conceal an object within it.
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| Number | Title | Issue Date |
| 7314575 | Manufacturing method of glass substrate for magnetic disk, and manufacturing method of magnetic disk A method for manufacturing a glass substrate for a magnetic disk comprises mirror surface polishing and cleaning of a glass substrate, wherein polishing agent of which the principal component is rare-earth oxide with content of fluorine 5% by weight or less, is supp... | 01/01/2008 |
| 7306681 | Method of cleaning a semiconductor substrate A cleaning method and cleaning recipes are disclosed. The present invention relates to a method for cleaning a semiconductor substrate and cleaning recipes. The present invention utilizes a first cleaning solution including diluted hydrofluoric acid and a second cle... | 12/11/2007 |
| 7208454 | Cleaning solution for removing anti-reflective coating composition A cleaning solution for a cured anti-reflective layer (AFC layer) component and a method of cleaning an anti-reflective layer component by using the same, wherein the cleaning solution comprises about 5–30% by weight of ammonium hydroxide, about 23–70% by weight... | 04/24/2007 |
| 7179753 | Process for planarizing substrates of semiconductor technology In a process for planarization of semiconductor substrates in which a layer which has been applied to a semiconductor substrate which has a trench and/or contact holes is removed such that the layer remains solely in the area of the trenches or contact holes, instea... | 02/20/2007 |
| 7060631 | Methods of cleaning surfaces of copper-containing materials, and methods of forming openings to copper-containing substrates The invention encompasses a semiconductor processing method of cleaning a surface of a copper-containing material by exposing the surface to an acidic mixture comprising Cl−, NO3− and F−. The invention also includes ... | 06/13/2006 |
| 7030034 | Methods of etching silicon nitride substantially selectively relative to an oxide of aluminum A method of etching silicon nitride substantially selectively relative to an oxide of aluminum includes providing a substrate comprising silicon nitride and an oxide of aluminum. The silicon nitride and the oxide is exposed to an etching solution comprising HF and a... | 04/18/2006 |
| 7008548 | Etchant for etching metal wiring layers and method for forming thin film transistor by using the same The present invention discloses an etchant for etching at least two different metal layers, the etchant comprising hydrogen peroxide (H2O2) and one of carboxylic acid, carboxylate salt, and acetyl group (CH3CO—). The present invent... | 03/07/2006 |
| 6936183 | Etch process for etching microstructures A two-step method of releasing microelectromechanical devices from a substrate is disclosed. The first step comprises isotropically etching a silicon oxide layer sandwiched between two silicon-containing layers with a gaseous hydrogen fluoride-water mixture, the ove... | 08/30/2005 |
| 6902626 | Method for roughening copper surface A liquid etchant and a method for roughening a copper surface each capable of providing copper with a roughened surface increased in acid resistance regardless of a chlorine ion in a short period of time, to thereby ensure firm adhesion between a copper conductive p... | 06/07/2005 |
| 6893578 | Selective etchant for oxide sacrificial material in semiconductor device fabrication An etching composition and method is disclosed for removing an oxide sacrificial material during manufacture of semiconductor devices including micromechanical, microelectromechanical or microfluidic devices. The etching composition and method are based on the combi... | 05/17/2005 |
| 6793838 | Chemical milling process and solution for cast titanium alloys The present invention relates to a chemical milling solution and a chemical milling process for removing a desired depth of material from metal parts. The milling solution contains nitric acid, hydrofluoric acid, a wetting agent, such as a surfactant, dissolved tita... | 09/21/2004 |
| 6706121 | Device and method for the treatment of semiconductor wafers In a method of treating substrates a treatment fluid is fed into a collection vessel after treatment, at least a portion of the treatment fluid is withdrawn from the collection vessel and returned to respective reservoir and the collection vessel is rinsed before re... | 03/16/2004 |
| 6692580 | Method of cleaning a dual damascene structure A method of cleaning a dual damascene structure. A first metal layer, a cap layer, and a dielectric layer are formed on a substrate in sequence. Then a dual damascene opening is formed in the dielectric layer and the cap layer, exposing the first metal la... | 02/17/2004 |
| 6666987 | Liquid etchant and method for roughening copper surface A liquid etchant and a method for roughening a copper surface each capable of providing copper with a roughened surface increased in acid resistance regardless of a chlorine ion in a short period of time, to thereby ensure firm adhesion between a copper c... | 12/23/2003 |
| 6656294 | Method of reducing elution of lead in lead-containing copper alloy, and drinking water service fittings made of lead-containing copper alloy It is an object of the present invention to provide a processing method for preventing elution of lead in a lead-containing copper alloy to prevent lead from eluting from a faucet metal, etc. made of a lead-containing copper alloy, and a drinking water se... | 12/02/2003 |
| 6653243 | Methods of cleaning surfaces of copper-containing materials, and methods of forming openings to copper-containing substrates The invention encompasses a semiconductor processing method of cleaning a surface of a copper-containing material by exposing the surface to an acidic mixture comprising Cl+, NO3+ and F+. The invention also incl... | 11/25/2003 |
| 6605230 | Solutions and processes for removal of sidewall residue after dry etching The present invention relates to a novel process for removing sidewall residue after dry-etching process. Conventionally, after dry-etching, photoresist and sidewall residues are removed by ozone ashing and hot sulfuric acid. Normally, they are hard to be... | 08/12/2003 |
| 6589882 | Copper post-etch cleaning process The invention includes a method of cleaning a surface of a copper-containing material by exposing the surface to an acidic mixture comprising NO3-, F- and one or more organic acid anions having carboxylate groups. The inve... | 07/08/2003 |
| 6589439 | Composition for selective etching of oxides over metals A composition for selective etching of oxides over a metal. The composition contains water, hydroxylammonium salt, carboxylic acid, a fluorine containing compound, and optionally, a base. The pH of the composition is about 2 to 6.... | 07/08/2003 |
| 6585910 | Etchant An etching treatment agent which can etch insulating film with high speeds without damaging the resist pattern, provide realistic throughput when the insulting film etching process in the semiconductor manufacturing process is replaced with the single waf... | 07/01/2003 |
| 6540931 | Removal of copper kiss from pickling high copper alloys When iron group, especially high nickel, metal alloys that contain substantial amounts of copper are pickled, a displacement coating of copper that is called a "copper kiss" often forms on the pickled surface from the dissolved copper ions in the pickling... | 04/01/2003 |
| 6383272 | Process for improving the adhesion of polymeric materials to metal surfaces A composition and process are described which are useful in treating metal surfaces, which composition comprises an oxidizer, an acid, a corrosion inhibitor, an organic nitro compound and, optionally, a benzotriazole with an electron withdrawing group in ... | 05/07/2002 |
| 6361712 | Composition for selective etching of oxides over metals A composition for selective etching of oxides over a metal. The composition contains water, hydroxylammonium salt, carboxylic acid, a fluorine containing compound, and optionally, a base. The pH of the composition is about 2 to 6.... | 03/26/2002 |
| 6270590 | Low lead release plumbing components made of copper based alloys containing lead, and a method for obtaining the same A method for treating a component made of a copper-based alloy containing lead. The component has Pb and Pb salts on a surface thereof. The method includes the step of etching the surface of the component selectively to remove almost entirely the Pb and P... | 08/07/2001 |
| 6123865 | Method for improving etch uniformity during a wet etching process A method for improving etch uniformity during a wet etching process is disclosed. The method comprises the steps of first rinsing the wafer to form a water film over the wafer surface, followed by liquid phase etching. The water film helps the subsequent ... | 09/26/2000 |
| 6123088 | Method and cleaner composition for stripping copper containing residue layers A cleaner composition for removing from within a microelectronic fabrication a copper containing residue layer in the presence of a copper containing conductor layer, and a method for stripping from within a microelectronic fabrication the copper containi... | 09/26/2000 |
| 6083413 | Metals removal process A process for removing metallic material, for instance copper, iron, nickle and their oxides, from a surface of a substrate such as a silicon, silicon oxide or gallium arsenide substrate. The process includes the steps of: a) placing the substrate in a re... | 07/04/2000 |
| 5620558 | Etching of copper-containing devices The linewidth in patterns produced by etching copper layers is more easily maintained using a specific etching medium. In particular, this medium includes aqueous hydrofluoric acid, copper chloride, and an additional chloride salt. The etching medium is a... | 04/15/1997 |
| 5575962 | Method for fabricating optical quality molds with precision microfeatures Optical quality molds and mold inserts include an optically flat substrate, a layer of material applied to the substrate and one or more depressions in a predetermined pattern formed in the layer of material applied to the substrate. The depth of the depr... | 11/19/1996 |
| 5554254 | Post contact layer etch back process which prevents precipitate formation A process for preventing the formation of precipitates on a substrate surface after a contact layer (e.g., tungsten layer) etch back. The process involves removing the precursor chemicals of the precipitate. In one embodiment of the invention, the precurs... | 09/10/1996 |
| 5431774 | Copper etching A dry etch for metals such as copper using π-acids in an energetic environment such as a plasma, laser, or afterglow reactor (102) or by using ligands forming volatiles at low temperature within a pulsed energetic environment.... | 07/11/1995 |
| 5328552 | Leadframe processing for molded package arrangements A method for processing a leadframe for use with a molded package is disclosed. In particular, the method is suited for arrangements where direct wirebond attachment sites are exposed through the molding material. Conventional molding processes usually re... | 07/12/1994 |
| 5298117 | Etching of copper-containing devices The linewidth in patterns produced by etching copper layers is more easily maintained using a specific etching medium. In particular, this medium includes aqueous hydrofluoric acid, copper chloride, and an additional chloride salt. The etching medium is a... | 03/29/1994 |
| 5106454 | Process for multilayer printed circuit board manufacture Process for at least partially dissolving a copper oxide surface layer by contacting the surface layer with one or more copper oxide dissolving compounds. When used in the manufacture of a multilayer printed circuit board, the process improves adhesion be... | 04/21/1992 |
| 5049234 | Methods for removing stringers appearing in copper-containing multi-layer printed wiring boards Copper-containing multilayer substrates are etched, and stringers formed in the plated through-holes in these substrates are simultaneously removed by treatment with an aqueous composition including about 37% by weight hydrofluoric acid and about 16% by w... | 09/17/1991 |
| 4915781 | Stabilized hydrogen peroxide compositions The present invention is directed to a hydrogen peroxide solution stabilized by ##STR1## wherein X is a linking group and Y is a metal cation or H which compound is soluble in hydrogen peroxide. In the second aspect of of the invention, a stabil... | 04/10/1990 |
| 4875973 | Hydrogen peroxide compositions containing a substituted aminobenzaldehyde The invention is directed to a hydrogen peroxide solution stabilized by a substituted aminobenzaldehyde compound which is soluble in hydrogen peroxide. The stabilized hydrogen peroxide solution contains a mineral acid which is especially useful for etchin... | 10/24/1989 |
| 4875972 | Hydrogen peroxide compositions containing a substituted oxybenzene compound The present invention is directed to a hydrogen peroxide solution stabilized by a substituted oxybenzene compound which is soluble in hydrogen peroxide. In a second aspect of the invention, a stabilized hydrogen peroxide solution contains a mineral acid w... | 10/24/1989 |
| 4725374 | Process and apparatus for etching copper base materials A solution for etching copper or a copper base material, the solution consisting essentially of peroxydisulfuric acid, being present in an amount of from about 0.5N up to about 6.0N, with chloride or fluoride present in an amount of from about 10 ppm up t... | 02/16/1988 |
| 4687545 | Process for stripping tin or tin-lead alloy from copper A two step process is described for selectively stripping tin or tin-lead alloys from a copper substrate without significant loss of copper from the substrate. In a first step the substrate coated with tin or tin-lead alloy is subjected to the action of a... | 08/18/1987 |
