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Class 216/105 - Metal is elemental copper, an alloy, or compound thereof


Subclass of Class 216 - Etching a substrate: processes
Definition: Process wherein the substrate etched contains elemental
No. of patents: 276
Last issue date: 10/07/2008


1              
NumberTitleIssue Date
7431861Etchant, replenishment solution and method for producing copper wiring using the same
An etchant for copper and copper alloys, includes an aqueous solution containing: 14 to 155 g/liter of cupric ion source in terms of a concentration of copper ions; 7 to 180 g/liter of hydrochloric acid; and 0.1 to 50 g/liter of azole, the azole including nitrogen a...
10/07/2008
7427360Process and ink for making electronic devices
A process for making an electronic device comprising a dielectric substrate laminated with an electrically conductive metal or alloy which comprises applying a non-aqueous etch-resistant ink by ink jet printing to selected areas of the metal or alloy, exposing the e...
09/23/2008
7387970Method of using an aqueous solution and composition thereof
A method for processing semiconductor wafers is disclosed. A semiconductor wafer is provided to a semiconductor processing stage where a block copolymer surfactant (BCS) is applied to the wafer surface. In one embodiment, the BCS includes a hydrophobic portion and a...
06/17/2008
7383629Method of making circuitized substrates utilizing smooth-sided conductive layers as part thereof
A circuitized substrate in which two conductive layers (e.g., electroplated copper foil) are bonded (e.g., laminated) to an interim dielectric layer. Each of the two foil surfaces which physically bond to the dielectric are smooth (e.g., preferably by chemical proce...
06/10/2008
7384871Chemical mechanical polishing compositions and methods relating thereto
The present invention provides an aqueous composition useful for polishing nonferrous metal interconnects on a semiconductor wafer comprising oxidizer, inhibitor for a nonferrous metal, complexing agent for the nonferrous metal, modified cellulose, 0.01 to 5% by wei...
06/10/2008
7357879Etching solution, method of etching and printed wiring board
There is provided an etching solution comprised of a cupric chloride solution and a high-concentration triazole type compound added to the cupric chloride solution and capable of forming an etching-inhibiting coating. In a process of forming a circuit pattern by etc...
04/15/2008
7329365Etchant composition for indium oxide layer and etching method using the same
An etchant for removing an indium oxide layer includes sulfuric acid as a main oxidizer, an auxiliary oxidizer such as H3PO4, HNO3, CH3COOH, HClO4, H2O2, and a Compound A that is obtained b...
02/12/2008
7309449Substrate processing method
A substrate processing enables etching of a barrier metal film at around room temperature without application of a mechanical load and without excessive etching of a necessary portion of copper. The substrate processing flattens a copper film and a barrier metal fil...
12/18/2007
7306637Anionic abrasive particles treated with positively charged polyelectrolytes for CMP
The invention provides chemical-mechanical polishing systems, and methods of polishing a substrate using the polishing systems, comprising (a) an abrasive, (b) a liquid carrier, and (c) a positively charged polyelectrolyte with a molecular weight of about 15,000 or ...
12/11/2007
7303993Chemical mechanical polishing compositions and methods relating thereto
The present invention provides an aqueous composition useful for CMP of a semiconductor wafer containing a metal comprising oxidizer, inhibitor for a nonferrous metal, complexing agent for the nonferrous metal, modified cellulose, 0.001 to 10% by weight copolymer bl...
12/04/2007
7285229Etchant and replenishment solution therefor, and etching method and method for producing wiring board using the same
An etchant of the present invention includes an aqueous solution containing hydrochloric acid, nitric acid, and a cupric ion source. An etching method of the present invention includes bringing the etchant into contact with at least one metal selected from nickel, c...
10/23/2007
7258808High-power ball grid array package, heat spreader used in the BGA package and method for manufacturing the same
A high-power BGA includes a printed circuit board with a through hole, connection pads formed on the bottom of the printed circuit board, matrix solder balls surrounding the through hole and adjacent to the connection pads, a heat spreader on the top surface of the ...
08/21/2007
7259091Technique for forming a passivation layer prior to depositing a barrier layer in a copper metallization layer
By performing a wet chemical process after etching a via, contaminations may be removed and a thin passivation layer may be formed that may then be readily removed in a subsequent sputter etch process for forming a barrier/adhesion layer. In a particular embodiment,...
08/21/2007
7232528Surface treatment agent for copper and copper alloy
The surface treatment agent for copper and copper alloys contains hydrogen peroxide, a mineral acid, an azole compound, silver ion and a halide ion. The surface treatment agent for copper and copper alloys is useful in the production of printed wiring boards in elec...
06/19/2007
7172976Extrusion-free wet cleaning process for copper-dual damascene structures
An extrusion-free wet cleaning process for post-etch Cu-dual damascene structures is developed. The process includes the following steps: (1). providing a wafer having a silicon substrate and at least one post-etch Cu-dual damascene structure, the post-etch Cu-dual ...
02/06/2007
7159298Method for the formation of RF antennas by demetallizing
A thin and flexible radio frequency (RF) antenna tag or label is disclosed which contains an RF circuit connected to an antenna which is created by demetallizing the area around the antenna pattern on a thin, metallized substrate such as a film or paper web. Antenna...
01/09/2007
7138064Semiconductor device and method of manufacturing the same
The present invention relates to a method of manufacturing a semiconductor device. In the method, an etching-back layer consisting of aluminum or copper is formed on a base substrate and a multilayer wiring board is manufactured on the etching-back layer. After that...
11/21/2006
7108795Composition and method for preparing chemically-resistant roughened copper surfaces for bonding to substrates
The invention is directed to a method and composition for providing chemically-resistant roughened copper surfaces suitable for subsequent multilayer lamination. In one embodiment, a smooth copper surface is contacted with an adhesion promoting composition under con...
09/19/2006
7067068Method for preventing lead from dissolving from a lead-containing copper-based alloy
A lead-containing copper-based alloy is immersed into a weak acidic or neutral etching solution having a buffer effect which is formed by adding an organic acid into a complexing agent having a high ability to form a complexing ion with lead, and lead particles pres...
06/27/2006
7063800Methods of cleaning copper surfaces in the manufacture of printed circuit boards
The present invention sets forth an improved method of microetching a metal substrate by contacting the substrate with an aqueous composition comprising a sodium persulfate or hydrogen peroxide oxidizing agent, acid, and one or more additives. When the oxidizing age...
06/20/2006
7056448Method for forming circuit pattern
A method for forming a circuit pattern includes at least a step (a) of subjecting a non-conductor to electroless copper plating to form a copper film and a step (b) of etching the copper film so as to form a circuit pattern. As a catalyst for the electroless copper ...
06/06/2006
7056648Method for isotropic etching of copper
Copper and copper alloys are etched to provide uniform and smooth surface by employing an aqueous composition that comprises an oxidant, a mixture of at least one weak complexant and at least one strong complexant for the copper or copper alloy, and water and has a ...
06/06/2006
7037350Composition for chemical-mechanical polishing and method of using same
A composition for chemical-mechanical polishing, comprising an aqueous solution and an abrasive that comprises polymer particles, is described. The polymer particles carry an electrical charge, such that nearby particles repel one another. Accordingly, aggregation o...
05/02/2006
7030033Method for manufacturing circuit devices
Priorly, semiconductor devices wherein a flexible sheet with a conductive pattern was employed as a supporting substrate, a semiconductor element was mounted thereon, and the ensemble was molded have been developed. In this case, problems occur that a multilayer wir...
04/18/2006
7022254Chromate-free method for surface etching of titanium
Non-chromate solutions for treating and/or etching metals, particularly, aluminum, aluminum alloys, steel and titanium, and method of applying same wherein the solutions include either a titanate or titanium dioxide as a “drop-in replacement” for a chromium-cont...
04/04/2006
7008548Etchant for etching metal wiring layers and method for forming thin film transistor by using the same
The present invention discloses an etchant for etching at least two different metal layers, the etchant comprising hydrogen peroxide (H2O2) and one of carboxylic acid, carboxylate salt, and acetyl group (CH3CO—). The present invent...
03/07/2006
7001533Chromate-free method for surface etching of aluminum and aluminum alloys
Non-chromate solutions for treating and/or etching metals, particularly, aluminum, aluminum alloys, steel and titanium, and method of applying same wherein the solutions include either a titanate or titanium dioxide as a “drop-in replacement” for a chromium-cont...
02/21/2006
6967174Wafer chuck for use in edge bevel removal of copper from silicon wafers
A wafer chuck includes alignment members that allows a semiconductor wafer to be properly aligned on the chuck without using a separate alignment stage. The alignment members may be cams, for example, attached to arms of the wafer chuck. These members may assume an ...
11/22/2005
6955586CMP composition and process
The present invention provides a chemical metal polishing (CMP) method with improved flexibility and improved processing window, especially as it relates to the chemical aspect of CMP technology. Broadly speaking, the invention has two aspects: according to one aspe...
10/18/2005
6946027Composition and method for preparing chemically-resistant roughened copper surfaces for bonding to substrates
The invention is directed to a method and composition for providing chemically-resistant roughened copper surfaces suitable for subsequent multilayer lamination. In one embodiment, a smooth copper surface is contacted with an adhesion promoting composition under con...
09/20/2005
6908561Polymide-to-substrate adhesion promotion in HDI
Methods for adhering polyimide dielectric materials to copper-, titanium-, aluminum-, or copper-and-titanium-containing portions of a substrate are described. The methods include the steps of applying adhesion promoter to a clean surface of the substrate, and curing...
06/21/2005
6902626Method for roughening copper surface
A liquid etchant and a method for roughening a copper surface each capable of providing copper with a roughened surface increased in acid resistance regardless of a chlorine ion in a short period of time, to thereby ensure firm adhesion between a copper conductive p...
06/07/2005
6899814Creating a mask for producing a printing plate
In order to simplify the sequence of creating a mask, in particular for producing a printing plate, and at the same time to improve the quality of the printing plate produced by means of a mask, the use of laser-induced thermal transfer is provided. The structure in...
05/31/2005
6858151Metal/ceramic bonding article and method for producing same
There is provided a method for producing a metal/ceramic bonding article, the method including the steps of: bonding a metal plate 12 of an alloy containing copper and nickel directly to at least one side of a ceramic substrate 10; applying a resist
02/22/2005
6833063Electrochemical edge and bevel cleaning process and system
The present invention provides an edge cleaning system and method in which a directed stream of a mild etching solution is supplied to an edge area of a rotating workpiece, including the front surface edge and bevel, while a potential difference between the workpiec...
12/21/2004
6818142Potassium hydrogen peroxymonosulfate solutions
A solution comprising potassium hydrogen peroxymonosulfate containing an elevated level of KHSO5 and having a weight ratio of SO5 to SO4 of greater than 1.0:1, and its use in microetching metal substrates is disclosed. ...
11/16/2004
6794292Extrusion-free wet cleaning process for copper-dual damascene structures
An extrusion-free wet cleaning process for post-etch Cu-dual damascene structures is developed. The process includes the following steps: (1). providing a wafer having a silicon substrate and at least one post-etch Cu-dual damascene structure, the post-etch Cu-dual ...
09/21/2004
6793838Chemical milling process and solution for cast titanium alloys
The present invention relates to a chemical milling solution and a chemical milling process for removing a desired depth of material from metal parts. The milling solution contains nitric acid, hydrofluoric acid, a wetting agent, such as a surfactant, dissolved tita...
09/21/2004
6776810Anionic abrasive particles treated with positively charged polyelectrolytes for CMP
The invention provides a chemical-mechanical polishing systems, and methods of polishing a substrate using the polishing systems, comprising (a) an abrasive, (b) a liquid carrier, and (c) a positively charged polyelectrolyte with a molecular weight of about 15,000 o...
08/17/2004
6773476Polishing composition and polishing method employing it
A polishing composition comprising: (a) at least one abrasive selected from the group consisting of silicon dioxide and aluminum oxide, (b) at least one organic compound selected from the group consisting of a polyethylene oxide, a polypropylene oxide,...
08/10/2004
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