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| Number | Title | Issue Date |
| 7628932 | Wet etch suitable for creating square cuts in si A single crystal silicon etching method includes providing a single crystal silicon substrate having at least one trench therein. The substrate is exposed to a buffered fluoride etch solution which undercuts the silicon to provide lateral shelves when patterned in t... | 12/08/2009 |
| 7417016 | Composition for the removing of sidewall residues The present invention relates to a composition for the removal of so-called “sidewall residues” from metal surfaces, in particular from aluminium or aluminium-containing surfaces, in particular from aluminium or aluminium-containing surfaces, during the producti... | 08/26/2008 |
| 7353863 | Method of surface treating aluminum alloy base body of heat exchanger and heat exchanger produced by the method A method of surface treating an aluminum alloy base body of an heat exchanger which method enables an etching procedure to be carried out uniformly and quickly and a corrosion-resistant chemical conversion coating to be formed, is effected by pretreating the Al heat... | 04/08/2008 |
| 7316785 | Methods and apparatus for the optimization of etch resistance in a plasma processing system In a plasma processing system, including a plasma processing chamber, a method of optimizing the etch resistance of a substrate material is described. The method includes flowing pre-coat gas mixture into the plasma processing chamber, wherein the pre-coat gas mixtu... | 01/08/2008 |
| 7306681 | Method of cleaning a semiconductor substrate A cleaning method and cleaning recipes are disclosed. The present invention relates to a method for cleaning a semiconductor substrate and cleaning recipes. The present invention utilizes a first cleaning solution including diluted hydrofluoric acid and a second cle... | 12/11/2007 |
| 7172708 | Process for the fabrication of thin-film device and thin-film device A thin-film device is fabricated by forming a protective layer and a thin-film device layer one by one on a first substrate and bonding a second substrate on the thin-film device layer via a first adhesive layer or a coating layer and first adhesive layer, removing ... | 02/06/2007 |
| 7163897 | Method for assaying elements in a substrate for optics, electronics, or optoelectronics The invention provides a method of assaying at least one element in a material including silicon. The method includes the steps of decomposing a portion of the material with an etching agent to form a solution containing hexafluorosilicic acid and at least one eleme... | 01/16/2007 |
| 7135413 | Cleaning solution for removing damaged portion of ferroelectric layer and cleaning method using the same A cleaning solution for use in removing a damaged portion of a ferroelectric layer, and a cleaning method using the solution. The cleaning solution includes a fluoride, an organic acid with carboxyl group, an alkaline pH adjusting agent and water. ... | 11/14/2006 |
| 7034688 | Selective metal removal process for metallized retro-reflective and holographic films and radio frequency devices made therewith A method for selectively removing metal from a metallized substrate (e.g., a metallized polymer film) and the formation fo devices thereby are provided. The method involves selectively exposing the metallized surface to a demetallizing (i.e., an oxidizing) chemical ... | 04/25/2006 |
| 6916429 | Process for removing aluminosilicate material from a substrate, and related compositions A process for removing aluminosilicate-based material (e.g., “CMAS”) from a substrate is described. The material is treated with an aqueous composition containing at least one acid having the formula HxAF6, in which A is Si, Ge, Ti, Zr, Al,... | 07/12/2005 |
| 6852472 | Polysilicon hard mask etch defect particle removal The removal of defect particles that may be created during polysilicon hard mask etching, and that are embedded within the polysilicon layer, is disclosed. Oxide is first grown in the polysilicon layer exposed through the patterned hard mask layer, so that the defec... | 02/08/2005 |
| 6793738 | Method for processing acid treatment solution, solution processed thereby, and method for treating articles therewith A method for preparing a solution for treating an article, a treatment solution made thereby, and a method for treating an article with the solution are presented with, for example, the treatment method comprising providing a quantity of treatment solution, the trea... | 09/21/2004 |
| 6706121 | Device and method for the treatment of semiconductor wafers In a method of treating substrates a treatment fluid is fed into a collection vessel after treatment, at least a portion of the treatment fluid is withdrawn from the collection vessel and returned to respective reservoir and the collection vessel is rinsed before re... | 03/16/2004 |
| 6692580 | Method of cleaning a dual damascene structure A method of cleaning a dual damascene structure. A first metal layer, a cap layer, and a dielectric layer are formed on a substrate in sequence. Then a dual damascene opening is formed in the dielectric layer and the cap layer, exposing the first metal la... | 02/17/2004 |
| 6638365 | Method for obtaining clean silicon surfaces for semiconductor manufacturing A method of preparing a silicon surface for a subsequent processing said such as thermal oxidation, or metal silicide formation, via use of a novel wet chemical clean procedure, has been developed. The novel wet chemical clean procedure is comprised of th... | 10/28/2003 |
| 6605230 | Solutions and processes for removal of sidewall residue after dry etching The present invention relates to a novel process for removing sidewall residue after dry-etching process. Conventionally, after dry-etching, photoresist and sidewall residues are removed by ozone ashing and hot sulfuric acid. Normally, they are hard to be... | 08/12/2003 |
| 6589882 | Copper post-etch cleaning process The invention includes a method of cleaning a surface of a copper-containing material by exposing the surface to an acidic mixture comprising NO3-, F- and one or more organic acid anions having carboxylate groups. The inve... | 07/08/2003 |
| 6585910 | Etchant An etching treatment agent which can etch insulating film with high speeds without damaging the resist pattern, provide realistic throughput when the insulting film etching process in the semiconductor manufacturing process is replaced with the single waf... | 07/01/2003 |
| 6553788 | Glass substrate for magnetic disk and method for manufacturing A method of manufacturing a glass substrate for a magnetic disk. The method includes the step of scrub-etching the glass substrate using a pad in the presence of an acid treatment solution. As the acid treatment solution, hydrofluoric acid is used in a ra... | 04/29/2003 |
| 6391119 | Method for cleaning PZT thin film A method for cleaning a PZT thin film using an etchant is provided. The method employs a combination of HF (or buffered oxide etchant (BOE)) and acetic acid, or a combination of HF(BOE), acetic acid and alcohol, as an etchant to thus reduce an etching rat... | 05/21/2002 |
| 6261637 | Use of palladium immersion deposition to selectively initiate electroless plating on Ti and W alloys for wafer fabrication A method for making integrated circuit wafers wherein the wafer has vias or other openings in the wafer which openings have a barrier/adhesion or other metal layer which is metallized to form the circuit comprising activating the metal layer and then sens... | 07/17/2001 |
| 6197388 | Methods of preventing post-etch corrosion of an aluminum neodymium-containing layer A method for processing a substrate having an aluminum neodymium-containing layer is disclosed. The aluminum neodymium-containing layer has residual chlorine proximate to its etch surface. The method includes providing a first gas chemistry including HBr ... | 03/06/2001 |
| 6184153 | Semiconductor material produced by improved etch process which protects metal The present invention is directed to a novel etching process for a semiconductor material which inhibits corrosion of metal comprised of pretreating the material, preferably with a surfactant, and then exposing the material to a mixture comprising salt, a... | 02/06/2001 |
| 6147006 | Cleaning gas A cleaning gas which is employed to remove an unnecessary deposited material formed in a thin film forming apparatus by thermal decomposition of pentaethoxytantalum or tetraethoxysilane without damaging a reactor, tools, parts and piping of a silicon oxid... | 11/14/2000 |
| 6123865 | Method for improving etch uniformity during a wet etching process A method for improving etch uniformity during a wet etching process is disclosed. The method comprises the steps of first rinsing the wafer to form a water film over the wafer surface, followed by liquid phase etching. The water film helps the subsequent ... | 09/26/2000 |
| 6083413 | Metals removal process A process for removing metallic material, for instance copper, iron, nickle and their oxides, from a surface of a substrate such as a silicon, silicon oxide or gallium arsenide substrate. The process includes the steps of: a) placing the substrate in a re... | 07/04/2000 |
| 6056615 | Wet chemical emitter tip treatment A wet chemical process is provided for treating an emitter formed on a substrate of a field emission display, the process comprises applying a solution including hydrogen to the emitter. In one embodiment of the invention, the steps of applying a solution... | 05/02/2000 |
| 5976988 | Etching material and etching method An alumina film, a silicon oxide film, and a silicon nitride film formed on a substrate containing a large amount of alumina are etched by using an etching material in which the concentration of ammonium fluoride, which is a component of BHF, is set low. ... | 11/02/1999 |
| 5895563 | Etchant for aluminum alloys An iron immersion composition of matter is disclosed comprising a compound having a divalent or trivalent iron ion, a compound having a fluoride ion, and a compound having an acid hydrogen ion. A process for treating an aluminum substrate to improve the a... | 04/20/1999 |
| 5858255 | Printed circuit plates A method for manufacturing printed circuit plates, which includes laminating an aluminum rolled leaf on a surface of an insulator base, forming an etching resist coat film on the surface of the aluminum rolled leaf, and then dissolving and removing an unn... | 01/12/1999 |
| 5853492 | Wet chemical emitter tip treatment A wet chemical process is provided for treating an emitter formed on a substrate of a field emission display, the process comprises applying a solution including hydrogen to the emitter. In one embodiment of the invention, the steps of applying a solution... | 12/29/1998 |
| 5824601 | Carboxylic acid etching solution and method A sacrificial oxide etching solution of carboxylic acid and HF having a high etch selectivity for silicon oxide relative to polysilicon, metal, and nitride. The solution is useful in the fabrication of microstructures having integrated electronics on the ... | 10/20/1998 |
| 5810938 | Metal brightening composition and process that do not damage glass An aqueous liquid composition containing acid fluoride ions (i.e., HF2-) not derived from hydrogen fluoride, together with an acid stronger than acid fluoride ions, and, preferably, surfactant, is very effective in brightening unpain... | 09/22/1998 |
| 5716532 | Demetallization of polymer/metal multilayer films by etching A method of improving the breakdown strength of polymer multi-layer (PML) capacitors is provided. The method comprises removing metal, specifically, aluminum, from the cut edge. This is done by either etching back the metal electrode layers in either basi... | 02/10/1998 |
| 5700383 | Slurries and methods for chemical mechanical polish of aluminum and titanium aluminide Slurries and methods for the chemical mechanical polishing of thin films used in integrated circuit manufacturing are described. A first slurry comprises an oxidant, such as water, a halogen, such as fluorine, an abrasive, such as silica, and a chelating ... | 12/23/1997 |
| 5695661 | Silicon dioxide etch process which protects metal The present invention is directed to a novel etching process for a semiconductor material which inhibits corrosion of metal comprised of pretreating the material, preferably with a surfactant, and then exposing the material to a mixture comprising salt, a... | 12/09/1997 |
| 5637252 | Inhibitor for aqueous liquid deoxidizing composition and process for aluminum, with reduced etching of titanium A chromium-and-ferricyanide non-aqueous cleaner/deoxidizer for aluminum, the cleaner/deoxidizer having an etch rate on titanium that is low enough for practical use in processes where aluminum objects to be deoxidized are held on titanium racks or hangers... | 06/10/1997 |
| 5587103 | Composition, and method for using same, for etching metallic alloys from a substrate A composition for optimally removing or etching metallic alloys from chemically compatible substrates with minimal damage to the substrate. The preferred composition is Ammonium Fluoride, Hydrofluoric Acid, Nitric Acid, Phosphoric Acid and Water in a spec... | 12/24/1996 |
| 5499731 | Substrate for a magnetic disc and manufacture thereof The present invention relates to a process for producing a substrate for a thin film magnetic data storage disc, the process including the steps of:- (a) providing a substrate; (b) printing a masking pattern of ink dots onto at least a portion of the surf... | 03/19/1996 |
| 5460694 | Process for the treatment of aluminum based substrates for the purpose of anodic oxidation, bath used in said process and concentrate to prepare the bath Process for the treatment of aluminum based substrates for the purpose of their anodic oxidation, comprising a surface treatment or chemical etching step using an acid bath comprising at least one fluorinated derivative of titanium and/or of zirconium and... | 10/24/1995 |
