"I hate what they've done to my child...I would never let my own children watch it. "
Vladimir Zworykin, television pioneer ; Talking about an invention in which he played a critical role.
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| Number | Title | Issue Date |
| 7341502 | Methods and systems for planarizing workpieces, e.g., microelectronic workpieces Planarizing workpieces, e.g., microelectronic workpieces, can employ a process indicator which is adapted to change an optical property in response to a planarizing condition. This process indicator may, for example, change color in response to reaching a particular... | 03/11/2008 |
| 7338908 | Method for fabrication of semiconductor interconnect structure with reduced capacitance, leakage current, and improved breakdown voltage An etching process for selectively etching exposed metal surfaces of a substrate and forming a conductive capping layer over the metal surfaces is described. In some embodiments, the etching process involves oxidation of the exposed metal to form a metal oxide that ... | 03/04/2008 |
| 7323094 | Process for depositing a layer of material on a substrate An electroplating system (30) and process makes electrical current density across a semiconductor device substrate (20) surface more uniform during plating to allow for a more uniform or tailored deposition of a conductive material. The electrical curr... | 01/29/2008 |
| 7311811 | Device providing electrical contact to the surface of a semiconductor workpiece during processing Substantially uniform deposition of conductive material on a surface of a substrate, which substrate includes a semiconductor wafer, from an electrolyte containing the conductive material can be provided by way of a particular device which includes first and second ... | 12/25/2007 |
| 7303662 | Contacts for electrochemical processing Systems and methods for electrochemically processing. A contact element defines a substrate contact surface positionable in contact a substrate during processing. In one embodiment, the contact element comprises a wire element. In another embodiment the contact elem... | 12/04/2007 |
| 7301190 | Structures and methods to enhance copper metallization Disclosed structures and methods inhibit atomic migration and related capacitive-resistive effects between a metallization layer and an insulator layer in a semiconductor structure. One exemplary structure includes an inhibiting layer between an insulator and a meta... | 11/27/2007 |
| 7285196 | Methods and apparatus for making integrated-circuit wiring from copper, silver, gold, and other metals In recent years, copper wiring has emerged as a promising substitute for the aluminum wiring in integrated circuits, because copper offers lower electrical resistance and better reliability at smaller dimensions than aluminum. However, use of copper typically requir... | 10/23/2007 |
| 7276442 | Method for forming a metallization layer A method for depositing metal on a semiconductor device having a substrate, an exposed first surface, and an exposed second surface is provided. Metal ions are deposited on the exposed first surface and on the exposed second layer by applying a first voltage between... | 10/02/2007 |
| 7273535 | Insoluble anode with an auxiliary electrode A method and apparatus for plating a metal onto a substrate. The apparatus includes a fluid basin configured to contain a plating solution, an anode fluid volume positioned in a lower portion of the fluid basin, a cathode fluid volume positioned in an upper portion ... | 09/25/2007 |
| 7262505 | Selective electroless-plated copper metallization Structures and methods are provided which include a selective electroless copper metallization. The present invention includes a novel methodology for forming copper vias on a substrate, including depositing a thin film seed layer of Palladium (Pd) or Copper (Cu) on... | 08/28/2007 |
| 7252750 | Dual contact ring and method for metal ECP process A dual contact ring for contacting a patterned surface of a wafer and electrochemical plating of a metal on the patterned central region of the wafer and removing the metal from the outer, edge region of the wafer. The dual contact ring has an outer voltage ring in ... | 08/07/2007 |
| 7247563 | Filling high aspect ratio openings by enhanced electrochemical deposition (ECD) One embodiment of the invention is a method for void-free filling with a metal or an alloy inside openings by electrochemical deposition (ECD), said method including steps of: (a) providing a substrate with at least one opening and a field surrounding the at least o... | 07/24/2007 |
| 7232514 | Method and composition for polishing a substrate Polishing compositions and methods for removing conductive materials from a substrate surface are provided. In one aspect, a composition includes an acid based electrolyte system, one or more chelating agents, one or more corrosion inhibitors, one or more inorganic ... | 06/19/2007 |
| 7229535 | Hydrogen bubble reduction on the cathode using double-cell designs An apparatus and method for planarizing a surface of a substrate using a chamber separated into two parts by a membrane, and two separate electrolytes is provided. The embodiments of the present invention generally provide an electrochemical mechanical polishing sys... | 06/12/2007 |
| 7223685 | Damascene fabrication with electrochemical layer removal The present application discloses process comprising providing a wafer, the wafer comprising an inter-layer dielectric (ILD) having a feature therein, an under-layer deposited on the ILD, and a barrier layer deposited on the under-layer, and a conductive layer depos... | 05/29/2007 |
| 7220665 | H plasma treatment Electronic devices are constructed by a method that includes forming a first conductive layer in an opening in a multilayer dielectric structure supported by a substrate, forming a core conductive layer on the first conductive layer, subjecting the core conductive l... | 05/22/2007 |
| 7214305 | Method of manufacturing electronic device Disclosed is a method of manufacturing an electronic device, comprising forming a concave portion on the surface of a base member, forming an electrically conductive seed layer on that surface of the base member on which a plated film is to be formed, and applying a... | 05/08/2007 |
| 7208074 | Substrate processing apparatus and substrate plating apparatus A substrate processing apparatus fills a metal such as copper or the like in fine interconnection patterns or trenches defined in a semiconductor substrate. The substrate processing apparatus has a loading/unloading unit for placing a substrate cassette to allow a s... | 04/24/2007 |
| 7202161 | Substrate processing method and apparatus There is provided a substrate processing method which, even when a material having a low mechanical strength is employed as an interlayer dielectric, can produce a semiconductor device having a multi-layer interconnect structure of fine interconnects in higher yield... | 04/10/2007 |
| 7201829 | Mask plate design The present invention includes a mask plate design that includes at least one or a plurality of channels portions on a surface of the mask plate, into which electrolyte solution will accumulate when the mask plate surface is disposed on a surface of wafer, and out o... | 04/10/2007 |
| 7198829 | Conductive organic thin film, process for producing the same, electronic device employing the same, electrical cable, electrode, pyrrolyl compound, and theienyl compound It is an object to provide a conductive organic thin film having organic molecules that include at one end a terminal bonding group that is covalently bonded to a substrate surface, a conjugate bonding group that is located at any portion of the organic molecules an... | 04/03/2007 |
| 7192494 | Method and apparatus for annealing copper films A method and apparatus for annealing copper. The method comprises forming a copper layer by electroplating on a substrate in an integrated processing system and annealing the copper layer in a chamber inside the integrated processing system. ... | 03/20/2007 |
| 7189647 | Sequential station tool for wet processing of semiconductor wafers Methods and apparatus are provided for processing semiconductor wafers sequentially. Sequential processes employ multi-station processing modules, where particular encompassing wafer processes are divided into sub-processes, each optimized for increasing wafer to wa... | 03/13/2007 |
| 7189313 | Substrate support with fluid retention band An apparatus and method for supporting a substrate is provided. In one embodiment, an apparatus for supporting a substrate includes a body having a band extending therefrom. The band is adapted to retain a fluid on the body thereby forming a shallow processing bath ... | 03/13/2007 |
| 7179361 | Method of forming a mass over a semiconductor substrate The invention includes methods of electrochemically treating semiconductor substrates. The invention includes a method of electroplating a substance. A substrate having defined first and second regions is provided. The first and second regions can be defined by a si... | 02/20/2007 |
| 7172497 | Fabrication of semiconductor interconnect structures A system and a method of forming copper interconnect structures in a surface of a wafer is provided. The method includes a step of performing a planar electroplating process in an electrochemical mechanical deposition station for filling copper material into a plura... | 02/06/2007 |
| 7160432 | Method and composition for polishing a substrate Polishing compositions and methods for removing conductive materials from a substrate surface are provided. In one aspect, a method is provided for processing a substrate to remove conductive material disposed over narrow feature definitions formed in a substrate at... | 01/09/2007 |
| 7147766 | Chip interconnect and packaging deposition methods and structures The present invention relates to a method for fabricating high performance chip interconnects and packages by providing methods for depositing a conductive material in cavities of a substrate in a more efficient and time saving manner. This is accomplished by select... | 12/12/2006 |
| 7138039 | Liquid isolation of contact rings Embodiments of the invention may further provide a contact ring for an electrochemical plating system. The contact generally includes a substrate receiving member having a substrate support surface formed thereon, a plurality of electrical contact pins extending fro... | 11/21/2006 |
| 7128825 | Method and composition for polishing a substrate Polishing compositions and methods for removing conductive materials from a substrate surface are provided. In one aspect, a composition includes an acid based electrolyte system, one or more chelating agents, one or more corrosion inhibitors, one or more inorganic ... | 10/31/2006 |
| 7125477 | Contacts for electrochemical processing Systems and methods for electrochemically processing. A contact element defines a substrate contact surface positionable in contact a substrate during processing. In one embodiment, the contact element comprises a wire element. In another embodiment the contact elem... | 10/24/2006 |
| 7124386 | Dummy fill for integrated circuits A method and system are described to reduce process variation as a result of the electrochemical deposition (ECD), also referred to as electrochemical plating (ECP), and chemical mechanical polishing (CMP) processing of films in integrated circuit manufacturing proc... | 10/17/2006 |
| 7112270 | Algorithm for real-time process control of electro-polishing Method and apparatus for process control of electro-processes. The method includes electro-processing a wafer by the application of two or more biases and determining an amount of charge removed as a result of each bias, separately. In one embodiment, an endpoint is... | 09/26/2006 |
| 7098133 | Method of forming copper wiring in a semiconductor device Disclosed is a method of forming a copper wiring in a semiconductor device. A copper barrier metal layer and a copper seed layer are sequentially formed along the surface of an interlayer insulating film including damascene patterns. In a state that a wafer is then ... | 08/29/2006 |
| 7097755 | Electrochemical mechanical processing with advancible sweeper The present invention provides an apparatus for electrochemical mechanical processing of a surface of a workpiece by utilizing a process solution. The apparatus of the present invention includes an electrode touching the process solution, a belt workpiece surface in... | 08/29/2006 |
| 7091611 | Multilevel copper interconnects with low-k dielectrics and air gaps Structures and methods are provided for an improved multilevel wiring interconnect in an integrated circuit assembly. The present invention provides for a multilayer copper wiring structure by electroless, selectively deposited copper in a streamlined process which ... | 08/15/2006 |
| 7087144 | Contact ring with embedded flexible contacts A contact assembly for supporting a substrate in an electrochemical plating system, wherein that contact assembly includes a contact ring and a thrust plate assembly. The contact ring includes an annular ring member having an upper surface and a lower surface, an an... | 08/08/2006 |
| 7084059 | CMP system for metal deposition A system for dished metal redevelopment by providing a metal deposition solution at an interface between a moving semiconductor wafer and a moving polishing pad, which deposits metal onto dished metal in trenches in a layer of an interlayer dielectric; and by polish... | 08/01/2006 |
| 7077721 | Pad assembly for electrochemical mechanical processing Embodiments of a processing pad assembly for processing a substrate are provided. The processing pad assembly includes an upper layer having a processing surface and an electrode having a top side coupled to the upper layer and a bottom side opposite the top side. A... | 07/18/2006 |
| 7071562 | Interconnects with improved barrier layer adhesion Semiconductor devices comprising interconnect with improved adhesion of barrier layers to dielectric layers are formed by laser thermal annealing exposed surfaces of a dielectric layer in an atmosphere of NH3 and N2, and subsequently depositing... | 07/04/2006 |