"We are probably nearing the limit of all we can know about astronomy."
Simon Newcomb, astronomer ; 1888
Make the Most of Our Site
See this month's Top Inventors and Most Cited Patents.
Stay on top of the latest innovations by subscribing to an RSS feed.
Registered users: Manage your profile.
| Number | Title | Issue Date |
| 8133376 | Substrate holder, plating apparatus, and plating method A plating method and a plating apparatus, which has a plurality of plating units, for plating a substrate. Each of the plating units includes a plating tank for containing a plating solution therein, a water cleaning tank, disposed adjacent to said plating tank for ... | 03/13/2012 |
| 8075756 | Semiconductor wafer holder and electroplating system for plating a semiconductor wafer A semiconductor wafer holder includes first and second holding members between which a semiconductor wafer is held. The second holding member includes a second conductive element placed in contact with a first conductive element of the first holding member and the s... | 12/13/2011 |
| 7704367 | Method and apparatus for plating semiconductor wafers First and second electrodes are disposed at first and second locations, respectively, proximate to a periphery of a wafer support, wherein the first and second location are substantially opposed to each other relative to the wafer support. Each of the first and seco... | 04/27/2010 |
| 7704368 | Method and apparatus for electrochemical plating semiconductor wafers A method of electroplating conductive material on semiconductor wafers controls undesirable surface defects by reducing the electroplating current as the wafer is being initially immersed in a plating bath. Further defect reduction and improved bottom up plating of ... | 04/27/2010 |
| 7648621 | Copper electroplating method, pure copper anode for copper electroplating, and semiconductor wafer plated thereby with little particle adhesion The present invention pertains to an electrolytic copper plating method characterized in employing pure copper as the anode upon performing electrolytic copper plating, and performing electrolytic copper plating with the pure copper anode having a crystal grain diam... | 01/19/2010 |
| 7435324 | Noncontact localized electrochemical deposition of metal thin films A method of selectively electroplating metal features on a semiconductor substrate having a conductive surface. An electrode assembly that includes a plurality of adjacent, mutually spaced and electrically isolated electrodes connected in series so as to be opposite... | 10/14/2008 |
| 7425256 | Selective shield/material flow mechanism An apparatus and method for plating a workpiece. The apparatus comprises, generally, an anode, a cathode, and a selective anode shield/material flow assembly. In use, both the anode and the cathode are immersed in a solution, and the cathode is used to support the w... | 09/16/2008 |
| 7388147 | Metal contact structure for solar cell and method of manufacture In a solar cell having p doped regions and n doped regions alternately formed in a surface of a semiconductor wafer in offset levels through use of masking and etching techniques, metal contacts are made to the p regions and n regions by first forming a base layer c... | 06/17/2008 |
| 7364664 | Foreign matter removing mechanism, fluid flow processing equipment, and foreign matter removing method The present processing apparatus blocks off such a portion of a flow of a plating solution (17) that is other than a vicinity of a liquid surface, by using a first partition plate (15) whose lower end is in close contact with a bottom of a plating tank... | 04/29/2008 |
| RE40218 | Electro-chemical deposition system and method of electroplating on substrates The invention provides an apparatus and a method for achieving reliable, consistent metal electroplating or electrochemical deposition onto semiconductor substrates. More particularly, the invention provides uniform and void-free deposition of metal onto metal seede... | 04/08/2008 |
| 7338585 | Electroplating chemistries and methods of forming interconnections A method comprising forming an interconnection opening through a dielectric material to a contact point; and electroplating a interconnection comprising copper in the contact opening using an electroplating bath comprising an alkoxylated sulfopropylated alkylamine. ... | 03/04/2008 |
| 7332066 | Apparatus and method for electrochemically depositing metal on a semiconductor workpiece A process for metallization of a workpiece, such as a semiconductor workpiece. In an embodiment, an alkaline electrolytic copper bath is used to electroplate copper onto a seed layer, electroplate copper directly onto a barrier layer material, or enhance an ultra-th... | 02/19/2008 |
| 7323094 | Process for depositing a layer of material on a substrate An electroplating system (30) and process makes electrical current density across a semiconductor device substrate (20) surface more uniform during plating to allow for a more uniform or tailored deposition of a conductive material. The electrical curr... | 01/29/2008 |
| 7316783 | Method of wiring formation and method for manufacturing electronic components A method of wiring formation includes forming a feeder film partially on a substrate, forming on the substrate a plating base film via a physical film making method so that the plate base film partially overlaps the feeder film, forming a plated wiring on the platin... | 01/08/2008 |
| 7314543 | Tin deposition A device includes an integrated circuit and a deposited tin in electrical contact with a portion of the integrated circuit. The deposited tin is formed by electrodeposition from a bath. The deposited tin includes a residue characteristic of the bath. The bath includ... | 01/01/2008 |
| 7296103 | Method and system for dynamically selecting wafer lots for metrology processing The present invention is generally directed to various methods and systems for dynamically controlling metrology work in progress. In one illustrative embodiment, the method comprises providing a metrology control unit that is adapted to control metrology work flow ... | 11/13/2007 |
| 7288479 | Method for forming a barrier/seed layer for copper metallization A method for improving adhesion of Cu to a Ru layer in Cu metallization. The method includes providing a substrate in a process chamber of a deposition system, depositing a Ru layer on the substrate in a chemical vapor deposition process, and forming a Cu seed layer... | 10/30/2007 |
| 7288177 | Selective shield/material flow mechanism An apparatus and method for plating a workpiece. The apparatus comprises, generally, an anode, a cathode, and a selective anode shield/material flow assembly. In use, both the anode and the cathode are immersed in a solution, and the cathode is used to support the w... | 10/30/2007 |
| 7285471 | Process for transfer of a thin layer formed in a substrate with vacancy clusters Processes for forming semiconductor structure comprising a transfer layer transferred from a donor substrate are provided in which the resulting structure has improved quality with respect to defects and resulting structures therefrom. For example, a semiconductor o... | 10/23/2007 |
| 7282445 | Multiple seed layers for interconnects One embodiment of the present invention is a method for depositing two or more seed layers over a substrate, the substrate includes a patterned insulating layer which comprises at least one opening surrounded by a field, the at least one opening and the field being ... | 10/16/2007 |
| 7253524 | Copper interconnects A semiconductor substrate has a first copper layer, on which an etch stop layer and a dielectric layer are successively formed. A second copper layer penetrates the dielectric layer and the etch stop layer to electrically connect to the first metal layer. The etch s... | 08/07/2007 |
| 7247557 | Method and composition to minimize dishing Processes are disclosed for producing electronic interconnect devices, particularly semi-conductor wafers, with metal interconnect traces thereon wherein the surface of said device has improved planarity. Said planarity is achieved initially through the use of pulse... | 07/24/2007 |
| 7241372 | Plating apparatus and plating liquid removing method A plating apparatus and a plating liquid removing method removes a plating liquid remaining on a substrate-contacting portion, or portions in its vicinity, of a substrate holding member. The plating apparatus comprises a head having a rotatable housing provided with... | 07/10/2007 |
| 7232771 | Method and apparatus for depositing charge and/or nanoparticles A method and apparatus for use in depositing electrical charge and/or nanoparticles is provided. A stamping process is used in which a stamp having a flexible layer such as a flexible semiconductor layer applies a charge pattern on a substrate. Other techniques incl... | 06/19/2007 |
| 7229916 | Method of manufacturing a semiconductor device A method of manufacturing a semiconductor device is to be provided, which improves filling performance of a conductive layer to be formed by an electrolytic plating process in an interconnect trench or a via hole, and achieves a higher in-plane uniformity in bottom-... | 06/12/2007 |
| 7223444 | Particle deposition apparatus and methods for forming nanostructures A fast method of creating nanostructures comprising the steps of forming one or more electrically-charged regions (5) of predetermined shape on a surface (1) of a first material, by contacting the regions with a stamp for transferring electric charge, ... | 05/29/2007 |
| 7223323 | Multi-chemistry plating system Embodiments of the invention generally provide an electrochemical plating system. The plating system includes a substrate loading station positioned in communication with a mainframe processing platform, at least one substrate plating cell positioned on the mainfram... | 05/29/2007 |
| 7220550 | Molecular wire injection sensors Disclosed is a sensor for sensing the presence of an analyte component without relying on redox mediators. This sensor includes (a) a plurality of conductive polymer strands each having at least a first end and a second end and each aligned in a substantially common... | 05/22/2007 |
| 7204918 | High efficiency plating apparatus and method An improved apparatus for treating plate-like workpieces with a designated chemical solution, including printed circuit boards, includes: (1) a tray for holding the chemical solution, with the tray having an open top which is configured to receive a horizontally-ori... | 04/17/2007 |
| 7201828 | Planar plating apparatus An apparatus for performing an electrochemical process on a surface of a workpiece comprises a platen assembly comprising a support platen, an electrolyte distribution plate, and a first conductive layer intermediate the support platen and distribution plate and con... | 04/10/2007 |
| 7198705 | Plating-rinse-plating process for fabricating copper interconnects An improved copper ECD process. After the copper seed layer (116) is formed, a first portion of copper film (118) is plated onto the surface of the seed layer (116). The surface of the first portion of the copper film (118) is then rinsed... | 04/03/2007 |
| 7199052 | Seed layers for metallic interconnects One embodiment of the present invention is a method for making copper or a copper alloy interconnects, which method includes: (a) forming a patterned insulating layer over a substrate, the patterned insulating layer including at least one opening and a field surroun... | 04/03/2007 |
| 7192494 | Method and apparatus for annealing copper films A method and apparatus for annealing copper. The method comprises forming a copper layer by electroplating on a substrate in an integrated processing system and annealing the copper layer in a chamber inside the integrated processing system. ... | 03/20/2007 |
| 7179736 | Method for fabricating planar semiconductor wafers The present invention relates to a method of fabricating planar semiconductor wafers. The method comprises forming a dielectric layer on a semiconductor wafer surface, the semiconductor wafer surface having vias, trenches and planar regions. A barrier and seed metal... | 02/20/2007 |
| 7179361 | Method of forming a mass over a semiconductor substrate The invention includes methods of electrochemically treating semiconductor substrates. The invention includes a method of electroplating a substance. A substrate having defined first and second regions is provided. The first and second regions can be defined by a si... | 02/20/2007 |
| 7172966 | Method for fabricating metallic interconnects on electronic components The invention, which relates to a method for fabricating metallic interconnects with copper-nickel-gold layer construction on electronic components, is based on the object of specifying a method by means of which it is possible to fabricate such metallic interconnec... | 02/06/2007 |
| 7169283 | Anodization device and anodization method In an anodization apparatus and an anodization method for electrochemically treating a target substrate by irradiating the target substrate with light, treatment of a large target substrate can be made possible with smaller constituent elements. The electrical conta... | 01/30/2007 |
| 7166204 | Plating apparatus and method A plating apparatus and method which smoothly perform contact of a plating liquid with a surface of the substrate and which can prevent air bubbles from remaining on the surface to be plated. The plating apparatus includes a plating bath containing a plating liquid ... | 01/23/2007 |
| 7164183 | Semiconductor substrate, semiconductor device, and method of manufacturing the same A semiconductor device includes a porous layer, a structure which is formed on the porous layer and has a semiconductor region whose height of the sectional shape is larger than the width, and a strain inducing region which strains the structure by applying stress t... | 01/16/2007 |
| 7153388 | Chamber for high-pressure wafer processing and method for making the same Broadly speaking, a wafer processing chamber for performing a high pressure wafer process is provided. More specifically, the wafer processing chamber incorporates a wafer processing volume and an outer chamber volume. The wafer processing volume is configured to co... | 12/26/2006 |