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Class 204/298.39 - Plural parallel plates (e.g., desmearing reactor, etc.)


Subclass of Class 204 - Chemistry: electrical and wave energy
Definition: Apparatus including a plurality of spaced apart, parallel
No. of patents: 35
Last issue date: 08/16/2005


NumberTitleIssue Date
6929712Plasma processing apparatus capable of evaluating process performance
A high-frequency current detector of a plasma processing apparatus detects a high-frequency current produced when high-frequency power in the range that does not cause generation of plasma in a chamber is supplied from a high-frequency power supply source to the cha...
08/16/2005
6406540Process and apparatus for the growth of nitride materials
This invention provides a process and apparatus for producing products of M-nitride materials wherein M=gallium (GaN), aluminum (AlN), indium (InN), germanium (GeN), zinc (ZnN) and ternary nitrides and alloys such as zinc germanium nitride or indium alumi...
06/18/2002
6231727Process for stripping the surface of a substrate and apparatus for implementing this process
Process for continuously stripping the surface of a substrate moving in a defined direction through a vacuum chamber past at least one counterelectrode, according to which process a plasma is created in a gas, between this counterelectrode and this surfac...
05/15/2001
5795452Dry process system
A dry process system comprising a chamber having an inlet for reaction gas and an exhaust port for exhaust gas, at least one pair of electrodes connected with an alternating current power source through a blocking capacitor, respectively, and one or more ...
08/18/1998
5527394Apparatus for plasma enhanced processing of substrates
Disclosed is an apparatus for plasma-enhanced processing of substrates, hng a recipient in which ions and reactive neutral particles (radicals) formed in plasma act on the substrate. The present invention is distinguished by having means for varying the ...
06/18/1996
5292394Apparatus for large-area ionic etching
An evacuable tank having gas inlet and gas outlet openings, with at least one large-area anode at ground potential and a cathode provided as a substrate holder disposed substantially parallel thereto and connected to a high-frequency voltage source. The a...
03/08/1994
5082547Plasma etching reactor
An improved plasma etching reactor of the type which has a vacuum chamber and which includes an electrostatic shield. The chamber has inner wall surfaces which are covered with a dielectric layer such as Teflon which in turn is covered on the inwardly fac...
01/21/1992
5061359Plasma processing apparatus including three bus structures
A system for plasma etching predetermined portions of material on the major surfaces of a plurality of substrates. The system comprises a plurality of electrodes substantially parallel to each other and to substrates alternating therewith. Each of the ele...
10/29/1991
5039376Method and apparatus for the plasma etching, substrate cleaning, or deposition of materials by D.C. glow discharge
The invention provides new methods and apparatus for the deposition of materials on substrates by the use of a D.C. glow discharge, sometimes also called a plasma discharge. A precursor gas (or gases) is introduced at low pressure (10-500 milliTor) into a...
08/13/1991
4915807Method and apparatus for processing a semiconductor wafer
An electrode (48) for generating molecular radicals to process a semiconductor wafer (52) is contained within an enclosure (56). A vacuum pump (58) is provided to evacuate the enclosure (56). A power source (50) powers plates (60), which are separated by ...
04/10/1990
4806225Desmearing and plated-through-hole apparatus
An integrated plasma desmearing and plated-through-hole apparatus for first plasma desmearing a printed circuit board and then plating through the holes of the plated circuit board by sputtering. The apparatus comprises a plurality of vacuum chambers seri...
02/21/1989
4676865Plasma desmear/etchback system and method of use
A process for etching back the exposed edges of layers of resin in drilled, multi-layered resin/copper laminates. The process includes the steps of heating at least one of the electrode plates in an evacuated chamber and causing a flow of plasma to pass b...
06/30/1987
4623441Paired electrodes for plasma chambers
A paired electrode for use in a plasma chamber. In one embodiment, the paired electrode comprises a plurality of angle members which are disposed parallel to one another. Pairs of the angle members are positioned facing one another, one functioning as a p...
11/18/1986
4618477Uniform plasma for drill smear removal reactor
A system for generating a substantially uniform plasma for processing a substrate having two major surfaces. Each of the substrate major surfaces may have electrically conductive portions. Two electrodes are oppositely disposed with respect to one another...
10/21/1986
4613403Method for treating golf ball surface with glow discharge plasma and apparatus therefor
Method for treating golf ball surface which is made of balta resin, thermoplastic elastomer, ionomer resin or the like to unpolymerizable gas plasma and then applying usual coating in an apparatus adapted to expose the all over surface of the ball to said...
09/23/1986
4610748Apparatus for processing semiconductor wafers or the like
A disk boat assembly for holding workpieces to be processed within a chemical reaction processing apparatus during the chemical vapor process. The boat assembly includes a pair of electrically conductive rail members held rigidly and radially apart betwee...
09/09/1986
4601807Reactor for plasma desmear of high aspect ratio hole
A system for generating uniform gas flow in a plasma reactor chamber. A hollow electrode having two major surfaces and a plurality of apertures in both major surfaces is disposed in the chamber. Connected to this hollow electrode is a radio frequency powe...
07/22/1986
4585516Variable duty cycle, multiple frequency, plasma reactor
A plasma reactor and a process for operating a plasma reactor are disclosed. The reactor comprises parallel plates in which one plate is connected to a source of high frequency signal and a second plate is connected to a source of low frequency signal. Co...
04/29/1986
4496420Process for plasma desmear etching of printed circuit boards and apparatus used therein
The inconsistent etch-back characteristics of conventional plasma treatment of multilayered printed circuit boards, are overcome by use of a shield, preferably of aluminum, temporarily affixed to each surface of the circuit board during the plasma desmear...
01/29/1985
4474659Plated-through-hole method
An apparatus and method for depositing a thin layer of material such as metal within the hole of an object such as a printed circuit board. The apparatus includes a gas diffusion chamber having a plurality of power electrodes with apertures positioned tra...
10/02/1984
4425210Plasma desmearing apparatus and method
This invention is based on desmearing holes of multi-layered printed wiring boards by flowing plasma through the holes. Desmearing of plasma etching applies active gases to organic surfaces causing a cleaning reaction and removal of the smear....
01/10/1984
4424096R-F Electrode type workholder and methods of supporting workpieces during R-F powered reactive treatment
Workpieces (11), such as semiconductor wafers, are treated in a plasma reaction apparatus (10). The wafers are loaded onto a workholder (18), where they become seated in contact with facing surfaces of a plurality of spaced, parallel plates (19, 21). Plas...
01/03/1984
4399014Plasma reactor and method therefor
A plasma reactor includes a plurality of series of parallel disposed cylindrical electrodes carried in a common vacuum vessel chamber. The series of electrodes are adapted to provide alternate polarities on each side of a plurality of workpieces, such as ...
08/16/1983
4381965Multi-planar electrode plasma etching
Dry plasma etching of a plurality of planar thin-film semiconductor wafers is effected simultaneously and uniformly in a relatively small chamber enveloping a vertically-stacked array of laminar electrode sub-assemblies each of which includes a pair of op...
05/03/1983
4371412Dry etching apparatus
A radio frequency and a static electric field are superposedly applied to a low pressure gas to generate a gaseous plasma and to drive ions of selected polarity in a predetermined direction. The processing chamber is pre-evacuated to a sufficiently high v...
02/01/1983
4328081Plasma desmearing apparatus and method
The present invention is directed to employing a rectilinear chamber for desmearing in which the two transitional ends are frustopyramidal in configuration. Each frustopyramidal diffusion chamber has a controlled exhaust valve which is piped to the vacuum...
05/04/1982
4292153Method for processing substrate materials by means of plasma treatment
A method for processing substrate materials by uniform plasma treatment, including the steps of mounting substrate materials onto a series of electrode plates arranged in parallel, alternately connecting the electrode plates to a pair of bus lines, applyi...
09/29/1981
4289598Plasma reactor and method therefor
A plasma reactor includes a series of parallel disposed electrodes carried in a vacuum vessel chamber. The series of electrodes is adapted to have alternate polarities. Supporting brackets are provided for positioning workpieces, such as multilayer printe...
09/15/1981
4287851Mounting and excitation system for reaction in the plasma state
Apparatus for supporting a plurality of wafer-like substrates so as to be treatable in a plasma environment. At least three plate-like electrically conductive electrodes are provided. They are parallel to and spaced from one another along an axis. A suppo...
09/08/1981
4285800Gas plasma reactor for circuit boards and the like
Gas plasma reactor for treatment of printed circuit boards and other relatively large, generally planar objects. The reactor includes a rack assembly having a plurality of spaced apart bars for holding the objects and a pair of generally planar electrodes...
08/25/1981
4282077Uniform plasma etching system
A uniform plasma etching system includes a plasma reaction chamber with a source of reactive gas communicating therewith and an RF generator connected to individual electrodes located in the plasma chamber, the electrodes arranged for defining separate pa...
08/04/1981
4264393Reactor apparatus for plasma etching or deposition
Plasma reactor apparatus which provides improved uniformity of etching or deposition. A uniform radio frequency (RF) field is established between two closely spaced parallel plates disposed within the reactor. One of the plates functions as a manifold for...
04/28/1981
4233109Dry etching method
A radio frequency and a static electric field are superposedly applied to a low pressure gas to generate a gaseous plasma and to drive ions of selected polarity in a predetermined direction. The processing chamber is pre-evacuated to a sufficiently high v...
11/11/1980
4223048Plasma enhanced chemical vapor processing of semiconductive wafers
Semiconductive wafers are processed, i.e., etched or layers deposited thereon, by means of a plasma enhanced chemical vapor processing system. The processing system includes an evacuable horizontal tubular envelope disposed within a surrounding heater or ...
09/16/1980
4178877Apparatus for plasma treatment of semiconductor materials
An improved arrangement of electrode plates, semiconductor materials, electrode supports, and electrical power supplying circuitry is useful for plasma treatment of semiconductor materials in a reaction tube in the presence of a reaction gas....
12/18/1979
 
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