Did You Know...
...that power steering was invented by independent inventor Francis W. Davis? As chief engineer in the 1920s of the truck division of the Pierce Arrow Motor Car Company, he saw how hard it was to steer heavy vehicles. So that he would be able to keep the profits from his future invention, Davis left his job, rented a small engineering shop in Waltham, Mass., and developed a hydraulic power steering system that led to power steering.
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| Number | Title | Issue Date |
| 7432468 | Plasma processing apparatus and plasma processing method A microwave plasma processing apparatus 100 allows microwaves, passed through a plurality of slots 37, to be transmitted through a plurality of dielectric parts 31 supported by beams 26, raises a gas to plasma with the transmitted microwa... | 10/07/2008 |
| 7400096 | Large area plasma source An all permanent magnet Electron Cyclotron Resonance, large diameter (e.g., 40 cm) plasma source suitable for ion/plasma processing or electric propulsion, is capable of producing uniform ion current densities at its exit plane at very low power (e.g., below 200 W),... | 07/15/2008 |
| 7399943 | Apparatus for metal plasma vapor deposition and re-sputter with source and bias power frequencies applied through the workpiece A plasma reactor includes a vacuum chamber including a sidewall, a ceiling and a wafer support pedestal near a floor of the chamber, and a vacuum pump coupled to the chamber. A process gas inlet is coupled to the chamber and a process gas source coupled to the proce... | 07/15/2008 |
| 7354504 | Dielectric profile controlled microwave sterilization system A dielectric profiler establishes a dielectric profile of microwave characteristics for identifying, sterilizing or inactivating a target material prior to performing a microwave irradiation event to sterilize or inactivate the target material. ... | 04/08/2008 |
| 7325511 | Microwave plasma processing apparatus, microwave processing method and microwave feeding apparatus A microwave plasma processing apparatus includes a processing vessel, a microwave generator, a waveguide guiding a microwave formed by the microwave generator, and a microwave emitting member emitting the microwave with wavelength compression by a retardation plate,... | 02/05/2008 |
| 7311796 | Plasma processing apparatus A plasma processing apparatus comprises: a chamber 12 having at least one opening and for generating plasma; a dielectric member 14 provided to cover the opening air-tightly; at least one wave guide 16 provided in the exterior of the chamber suc... | 12/25/2007 |
| 7189939 | Portable microwave plasma discharge unit A portable microwave plasma discharge unit receives microwaves and a gas flow via a supply line. The portable microwave plasma discharge unit generates plasma from the gas flow and the received microwaves. The portable microwave plasma discharge unit includes a gas ... | 03/13/2007 |
| 7189675 | Olefin polymerization catalyst on plasma-contacted support A method for preparing an olefin polymerization catalyst is disclosed. An inorganic oxide is contacted with plasma and a transition metal compound is supported on the contacted inorganic oxide. The method is fast, convenient, and avoids many of the problems associat... | 03/13/2007 |
| 7071442 | Plasma processing apparatus A plasma processing apparatus includes a processing container 53, a mounting table 61 arranged in the processing container 53 to support a wafer W, a sealing plate 55 opposed to the wafer W supported by the mounting table 61, an an... | 07/04/2006 |
| 7008484 | Method and apparatus for deposition of low dielectric constant materials A showerhead adapted for distributing gases into a process chamber and a method for forming dielectric layers on a substrate are generally provided. In one embodiment, a showerhead for distributing gases in a processing chamber includes an annular body coupled betwe... | 03/07/2006 |
| 6951821 | Processing system and method for chemically treating a substrate A processing system and method for chemically treating a substrate, wherein the processing system comprises a temperature controlled chemical treatment chamber, and an independently temperature controlled substrate holder for supporting a substrate for chemical trea... | 10/04/2005 |
| 6891123 | Plasma ignition method and apparatus Method and an apparatus for igniting plasma in a semiconductor manufacturing apparatus are disclosed. An example plasma ignition method and apparatus sets a predetermined pressure, source power and bias power of a chamber and flows a predetermined flow rate of CHF | 05/10/2005 |
| 6870123 | Microwave applicator, plasma processing apparatus having same, and plasma processing method In order to more accurately control the radiation characteristics of microwaves to improve the controllability of processing in radial and circumferential directions of an article, there are disclosed a microwave applicator and a plasma processing apparatus using th... | 03/22/2005 |
| 6847003 | Plasma processing apparatus A plasma processing apparatus includes a processing container 53, a mounting table 61 arranged in the processing container 53 to support a wafer W, a sealing plate 55 opposed to the wafer W supported by the mounting table 61, an an... | 01/25/2005 |
| 6805779 | Plasma generation using multi-step ionization The present invention relates to a plasma generator that generates a plasma with a multi-step ionization process. The plasma generator includes an excited atom source that generates excited atoms from ground state atoms supplied by a feed gas source. A plasma chambe... | 10/19/2004 |
| 6696662 | Methods and apparatus for plasma processing Plasma processing is carried out at pressures of about atmospheric pressure, at pressures below atmospheric pressure, or at pressures above atmospheric pressure. The plasmas are generated using a RF power source and a rectangular waveguide. The plasmas ca... | 02/24/2004 |
| 6657151 | Plasma processing device To uniformly generate plasma using microwaves in a processing vessel. To first to fourth feeding sections 141a to 141d which are evenly placed on the same plane perpendicular to an axial direction of a main coaxial line 123, four microwaves shifted in pha... | 12/02/2003 |
| 6622650 | Plasma processing apparatus A plasma processing system may include a vacuum vessel, a substrate table arranged in the vacuum vessel, and a radio-frequency power supply system for generating high-frequency waves. A waveguide may be provided for guiding high-frequency waves into the v... | 09/23/2003 |
| 6429399 | Discharge tube for a local etching apparatus and a local etching apparatus using the discharge tube A discharge tube for a local etching apparatus has a portion positioned within a waveguide which is for the generation of plasma, the said portion being tapered so as to be divergent toward an orifice side of the discharge tube. Even in the event a maximu... | 08/06/2002 |
| 6422172 | Plasma processing apparatus and plasma processing method A plasma processing apparatus has plasma generating means including a means for generating capacitive coupled discharge and a means for radiating electromagnetic waves, so that the energy state of electrons is independently controlled by a combination of ... | 07/23/2002 |
| 6375860 | Controlled potential plasma source The occurrence of internally-formed contaminants or negatively-charged particulates within a plasma is minimized by preventing such from becoming trapped in the plasma. The plasma is formed in a plasma chamber having control electrodes and reference elect... | 04/23/2002 |
| 6358361 | Plasma processor The reactor 1 has an upper end portion attached with a ring member 10 supporting an annular seal plate 4. The ring member 10 has an upper surface attached with a cylindrical block member 25 screwed to the ring member 10. The block member 25 has a portion ... | 03/19/2002 |
| 6355902 | Plasma film forming method and plasma film forming apparatus Microwave is introduced into a plasma chamber of a plasma processing apparatus and magnetic field is applied thereto to allow plasma generation gas to be placed in plasma state by the electron cyclotron resonance. This plasma is introduced into a film for... | 03/12/2002 |
| 6332947 | Plasma processing apparatus and plasma processing method using the same A plasma processing apparatus is provided with at least one waveguide portion for introducing microwaves, an electron heating space chamber formed on a downstream side with respect to a dielectric body in the waveguide portion, and a plasma generating spa... | 12/25/2001 |
| 6290807 | Apparatus and method for microwave plasma process The invention provides microwave plasma process apparatus and method in which an antenna having a tubular member curved in a circular shape and including at least one slit is disposed on a sealing member for sealing a chamber, so that microwaves can be em... | 09/18/2001 |
| 6270618 | Plasma processing apparatus A plasma processing apparatus is provided which does not require replacement of a band eliminator according to a frequency used, which is capable of performing chamber cleaning without replacing a resonance circuit, and which is capable of performing plas... | 08/07/2001 |
| 6228210 | Surface wave coupled plasma etching apparatus A surface wave coupled plasma etching apparatus according to the present invention can produce a plasma within a confined area above an etching object by a microwave confinement plate, so as to prevent an upper portion of the apparatus from being sputtere... | 05/08/2001 |
| 6198067 | Plasma processing device for circuit supports Many boards 7 to be processed are disposed within a metal chamber 1 in an isolated state, and many ground electrode plates 9 are disposed near by both surfaces of the boards 7 so as to be at the same potential as the chamber 1. While a microwave generated... | 03/06/2001 |
| 6172321 | Method and apparatus for plasma processing apparatus A plasma processing apparatus and method of processing a specimen by a plasma. The method and apparatus includes independently controlling a density distribution of the plasma.... | 01/09/2001 |
| 6158382 | Method for forming a deposited film by plasma chemical vapor deposition and apparatus for forming a deposited film by plasma chemical vapor deposition A film-forming method by a plasma CVD process, comprising introducing a raw material gas into a reaction chamber containing a substrate positioned therein through a plurality of gas ejecting holes provided at a gas feed pipe and introducing a discharging ... | 12/12/2000 |
| 6152071 | High-frequency introducing means, plasma treatment apparatus, and plasma treatment method A high frequency introducing means is provided which comprises a high frequency electrode having a shape of a bar or plate for generating plasma by high frequency power, and an adjustment mechanism for adjusting an absolute value of reactance between an e... | 11/28/2000 |
| 6109208 | Plasma generating apparatus with multiple microwave introducing means A plasma generating apparatus capable of improving the uniformity of a plasma processing and coping with a larger diameter of a substrate is obtained. Microwaves are distributed and emitted from a waveguide through the branching portions of a T branch to ... | 08/29/2000 |
| 6091045 | Plasma processing apparatus utilizing a microwave window having a thinner inner area A plasma processing apparatus and a plasma processing method used in etching, ashing, CVD, etc. in the manufacturing, etc. of large-scale integrated circuits (LSIs) and liquid crystal display panels (LCDs). The plasma processing apparatus includes a diele... | 07/18/2000 |
| 6076484 | Apparatus and method for microwave plasma process The invention provides a microwave plasma process apparatus in which an antenna having a tubular member curved in a C shape or a spiral shape and including a slit is disposed on a sealing member for sealing a chamber, so that a microwave can be emitted th... | 06/20/2000 |
| 6039834 | Apparatus and methods for upgraded substrate processing system with microwave plasma source An apparatus and methods for an upgraded CVD system that provides a plasma for efficiently cleaning a chamber, according to a specific embodiment. Etching or depositing a layer onto a substrate also may be achieved using the upgraded CVD system of the pre... | 03/21/2000 |
| 6034346 | Method and apparatus for plasma processing apparatus An electromagnetically coupled plasma processing apparatus is arranged so that a microwave sent through a coaxial waveguide is enlarged by a parallel disk waveguide before being radiated from an enlarged coaxial portion. The electromagnetically coupled pl... | 03/07/2000 |
| 6024826 | Plasma reactor with heated source of a polymer-hardening precursor material A general method of the invention is to provide a polymer-hardening precursor piece (such as silicon, carbon, silicon carbide or silicon nitride, but preferably silicon) within the reactor chamber during an etch process with a fluoro-carbon or fluoro-hydr... | 02/15/2000 |
| 5997686 | Process for setting a working rate distribution in an etching or plasma CVD apparatus A process and apparatus for setting a working rate distribution along a work surface which is being AC plasma-enhanced reactively coated, or reactively or non-reactively etched in an AC plasma, and in which process a plasma volume of given volume is utili... | 12/07/1999 |
| 5985091 | Microwave plasma processing apparatus and microwave plasma processing method A microwave plasma processing apparatus comprises a plasma generation chamber, a processing chamber communicating with the plasma generation chamber, supporting of a substrate to be processed arranged in the processing chamber, a circular waveguide with s... | 11/16/1999 |
| 5975012 | Deposition apparatus A deposition apparatus including a deposition chamber containing therein a holder for holding a substrate and an electrode holding a sputtering target, a device for applying electrical power to the electrode, a gas supplying device for supplying gas to th... | 11/02/1999 |
