Celebrity Inventors
Glam girl Heddy Lamar may have used her good looks to good effect on the silver screen, but she put her smarts to better use as an inventor. During World War II, she co-patented a frequency-switching system for torpedo guidance that was considered years ahead of its time.
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| Number | Title | Issue Date |
| 7327089 | Beam plasma source A plasma source which includes a discharge cavity having a first width, where that discharge cavity includes a top portion, a wall portion, and a nozzle disposed on the top portion and extending outwardly therefrom, where the nozzle is formed to include an aperture ... | 02/05/2008 |
| 7320331 | In-situ plasma cleaning device for cylindrical surfaces An in-situ plasma cleaning device (PCD) performs an atomic surface cleaning process to remove contaminants and/or to modify the cylindrical surfaces of both the target and substrate. The atomic cleaning process utilizes a plasma generated locally within the in-situ ... | 01/22/2008 |
| 7316199 | Method and apparatus for controlling the magnetic field intensity in a plasma enhanced semiconductor wafer processing chamber A magnetic field generator for producing a magnetic field that accelerates plasma formation is placed proximate a reaction chamber of semiconductor substrate processing system. The magnetic field generator has four main magnetic coil sections for producing a magneti... | 01/08/2008 |
| 7294205 | Method for reducing the intrinsic stress of high density plasma films A layer of reduced stress is formed on a substrate using an HDP-CVD system by delaying or interrupting the application of capacitively coupled RF energy. The layer is formed by introducing a process gas into the HDP system chamber and forming a plasma from the proce... | 11/13/2007 |
| 7270729 | System for, and method of, etching a surface on a wafer First and second electrodes and magnets between the electrodes define an enclosure. The first electrode is biased at a high voltage to produce a high intensity electrical field. The second electrode is biased at a low negative voltage by a low alternating voltage to... | 09/18/2007 |
| 7183716 | Charged particle source and operation thereof A charged particle source utilizes a novel plasma processing chamber, RF coil and ion optics, to achieve high uniformity. The plasma processing chamber has a re-entrant vessel which is movable, and which includes extensions of adjustable shape or position, to make m... | 02/27/2007 |
| 7118992 | Wafer thinning using magnetic mirror plasma A method for manufacturing integrated circuits uses an atmospheric magnetic mirror plasma etching apparatus to thin a semiconductor wafer. In addition the process may, while thinning, both segregate and expose through-die vias for an integrated circuit chip. To segr... | 10/10/2006 |
| 7059268 | Method, apparatus and magnet assembly for enhancing and localizing a capacitively coupled plasma A magnetically enhanced plasma is produced with a permanent magnet assembly adjacent to a radio frequency (RF) biased wafer support electrode in a vacuum processing chamber of a semiconductor wafer processing apparatus. An annular peripheral region is provided on th... | 06/13/2006 |
| 7052583 | Magnetron cathode and magnetron sputtering apparatus comprising the same A magnetron cathode and a sputtering apparatus including the same are provided. The magnetron cathode includes three or more magnet units, each of which comprises a single magnet or a plurality of magnets having the same poles facing toward the same direction, where... | 05/30/2006 |
| 7033514 | Method and apparatus for micromachining using a magnetic field and plasma etching This invention relates to a method and apparatus for forming a micromachined device, where a workpiece is plasma etched to define a microstructure. The plasma etching is conducted in the presence of a magnetic field, which can be generated and manipulated by an elec... | 04/25/2006 |
| 7015413 | Plasma generation system having a refractor A plasma generation system that is capable of generating uniform high-density plasma includes a microwave generator for generating microwaves, a refractor for altering a direction of propagation of the microwaves, and an electromagnetic unit for applying a magnetic ... | 03/21/2006 |
| 7004107 | Method and apparatus for monitoring and adjusting chamber impedance A substrate processing system that includes a deposition chamber having a reaction zone, a substrate holder that positions a substrate in the reaction zone, a gas distribution system that includes a gas inlet manifold for supplying one or more process gases to said ... | 02/28/2006 |
| 6988306 | High purity ferromagnetic sputter target, assembly and method of manufacturing same Provided is a method of forming ferromagnetic sputter targets and sputter target assemblies having a uniform distribution of magnetic leakage flux. The method includes providing a ferromagnetic sputter workpiece and hot rolling the workpiece to a substantially circu... | 01/24/2006 |
| 6951821 | Processing system and method for chemically treating a substrate A processing system and method for chemically treating a substrate, wherein the processing system comprises a temperature controlled chemical treatment chamber, and an independently temperature controlled substrate holder for supporting a substrate for chemical trea... | 10/04/2005 |
| 6949174 | Milling apparatus A milling apparatus is provided in which temperature rise of a treatment-object in milling treatment, especially of the substrate thereof, is prevented. In the apparatus, ionization mechanism 2 comprises casing 20d having an opening at the cente... | 09/27/2005 |
| 6937127 | Apparatus for manipulating magnetic fields Techniques for producing and manipulating magnetic fields. The techniques employ the mutual repulsion of magnetic fields to create uniform magnetic fields and to manipulate the uniform magnetic fields. The uniform magnetic field is created between two planar magnets... | 08/30/2005 |
| 6927358 | Vacuum seal protection in a dielectric break In one aspect of the invention is a method to create a vacuum seal with extended lifetime to form a dielectric break in a vacuum chamber. The method includes the use of an elastic dielectric seal to form a high vacuum seal. It also includes the use of different mean... | 08/09/2005 |
| 6903511 | Generation of uniformly-distributed plasma Methods and apparatus for generating uniformly-distributed plasma are described. A plasma generator according to the invention includes a cathode assembly that is positioned adjacent to an anode and forming a gap there between. A gas source supplies a volume of feed... | 06/07/2005 |
| 6896775 | High-power pulsed magnetically enhanced plasma processing Magnetically enhanced plasma processing methods and apparatus are described. A magnetically enhanced plasma processing apparatus according to the present invention includes an anode and a cathode that is positioned adjacent to the anode. An ionization source generat... | 05/24/2005 |
| 6864773 | Variable field magnet apparatus A magnet assembly for producing a varying magnetic field is provided wherein a plurality of permanent magnets are interposed between two members which are constructed of a ferromagnetic material. Each of the magnets is rotatable and has a north and south magnetic po... | 03/08/2005 |
| 6825437 | Apparatus enabling particle detection utilizing wide view lens When determining the presence of foreign particles in a processing chamber by radiating a laser beam inside a processing chamber and detecting scattered light from foreign particles within the processing chamber, the detection of scattered light is performed using a... | 11/30/2004 |
| 6805779 | Plasma generation using multi-step ionization The present invention relates to a plasma generator that generates a plasma with a multi-step ionization process. The plasma generator includes an excited atom source that generates excited atoms from ground state atoms supplied by a feed gas source. A plasma chambe... | 10/19/2004 |
| 6773558 | Fluorine generator A fluorine generator includes a vacuum chamber filled with a working gas. An r-f antenna is positioned outside the chamber across a dielectric window from a potassium fluoride (KF) source located in the chamber. The r-f antenna radiates through the window to heat th... | 08/10/2004 |
| 6767436 | Method and apparatus of plasma-enhanced coaxial magnetron for sputter-coating interior surfaces A plasma-enhanced coaxial magnetron sputter-cleaning and coating assembly for sputter-cleaning and coating the interior surfaces of a cylindrical workpiece is provided. The apparatus sputter-coats the workpiece using a cylindrical sputtering material, the material h... | 07/27/2004 |
| 6764575 | Magnetron plasma processing apparatus When a substrate 30 is to be subjected to a magnetron plasma process, a dipole ring magnet 21 is provided, in which a large number of anisotropic segment magnets 22 are arranged in a ring-like shape around the outer wall of a chamber 1. A... | 07/20/2004 |
| 6551445 | Plasma processing system and method for manufacturing a semiconductor device by using the same A parallel plate ECR plasma processing system is able to extend a plasma density region capable of keeping a continuous, uniform state. In this system, a first magnetic field-forming means formed of a solenoid coil and a second magnetic field-forming mean... | 04/22/2003 |
| 6524448 | Configuration for the execution of a plasma based sputter process The present invention relates to a system for executing a plasma-based sputtering method, such as for example a PVD (Physical Vapor Deposition) method. In a process chamber (1), a plasma (2) is produced in order to accelerate ionized particles, carried aw... | 02/25/2003 |
| 6521082 | Magnetically enhanced plasma apparatus and method with enhanced plasma uniformity and enhanced ion energy control Within both a magnetically enhanced plasma apparatus and a magnetically enhanced plasma method there is employed: (1) a repetitive and geometrically selective pulsing of a magnetic field from a first level to a second level within a reactor chamber; and (... | 02/18/2003 |
| 6514377 | Apparatus for and method of processing an object to be processed A magnetron reactive ion etching apparatus comprises: an electrode unit including electrodes facing each other through a semiconductor device; a high-frequency power source forming an electric field on the electrode unit; a dipole ring magnet; and a switc... | 02/04/2003 |
| 6475333 | Discharge plasma processing device A discharge plasma processing device comprising a chamber with an evacuation system, a magnetic field generation system and an electric field application system with which the feature of operation is first to form a magnetic neutral line in the vacuum cha... | 11/05/2002 |
| 6454898 | Inductively coupled RF Plasma reactor having an overhead solenoidal antenna and modular confinement magnet liners In accordance with a first aspect of the invention, a plasma reactor having a chamber for containing a plasma and a passageway communicating with the chamber is enhanced with a first removable plasma confinement magnet module placed adjacent the passagewa... | 09/24/2002 |
| 6422172 | Plasma processing apparatus and plasma processing method A plasma processing apparatus has plasma generating means including a means for generating capacitive coupled discharge and a means for radiating electromagnetic waves, so that the energy state of electrons is independently controlled by a combination of ... | 07/23/2002 |
| 6396024 | Permanent magnet ECR plasma source with integrated multipolar magnetic confinement A method and apparatus for integrating multipolar confinement with permanent magnetic electron cyclotron resonance plasma sources to produce highly uniform plasma processing for use in semiconductor fabrication and related fields. In a preferred embodimen... | 05/28/2002 |
| 6392350 | Plasma processing method There is provided a method capable of shortening a preheat time when a thin film is deposited after a preheat is carried out. The current values of a main electromagnetic coil and an auxiliary electromagnetic coil during a preheat and during a thin-film d... | 05/21/2002 |
| 6380684 | Plasma generating apparatus and semiconductor manufacturing method A plasma generating apparatus and processing method, which generate high-density plasma, even in the central portion of the plasma generating zone. The apparatus comprises rectangular electrodes, a rectangular fistulous discharge electrode which surrounds... | 04/30/2002 |
| 6375860 | Controlled potential plasma source The occurrence of internally-formed contaminants or negatively-charged particulates within a plasma is minimized by preventing such from becoming trapped in the plasma. The plasma is formed in a plasma chamber having control electrodes and reference elect... | 04/23/2002 |
| 6354240 | Plasma etch reactor having a plurality of magnets A plasma etch reactor 20 includes a upper electrode 24, a lower electrode 24, a peripheral ring electrode 26 disposed therebetween. The upper electrode 24 is grounded, the peripheral electrode 26 is powered by a high frequency AC power supply, while the l... | 03/12/2002 |
| 6332947 | Plasma processing apparatus and plasma processing method using the same A plasma processing apparatus is provided with at least one waveguide portion for introducing microwaves, an electron heating space chamber formed on a downstream side with respect to a dielectric body in the waveguide portion, and a plasma generating spa... | 12/25/2001 |
| 6322661 | Method and apparatus for controlling the volume of a plasma A plasma confinement arrangement for controlling the volume of a plasma while processing a substrate inside a process chamber using a plasma enhanced process is disclosed. The arrangement includes a first magnetic bucket having a plurality of first magnet... | 11/27/2001 |
| 6267075 | Apparatus for cleaning items using gas plasma A plasma cleaning apparatus for cleaning lead frames or other items comprised of a chamber adapted for containing a plasma, a magazine positioned in the chamber for holding the lead frames, a first active electrode positioned in the chamber on one side of... | 07/31/2001 |
