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Class 204/298.36 - Beam or directed flux etching (e.g., ion beam, etc.)


Subclass of Class 204 - Chemistry: electrical and wave energy
Definition: Apparatus including means for sputter etching or ion milling
No. of patents: 146
Last issue date: 04/24/2012


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NumberTitleIssue Date
8163145Method and apparatus for controlling topographical variation on a milled cross-section of a structure
An improved method of controlling topographical variations when milling a cross-section of a structure, which can be used to reduce topographical variation on a cross-section of a write-head in order to improve the accuracy of metrology applications. Topographical v...
04/24/2012
7993504Backside unlayering of MOSFET devices for electrical and physical characterization
A method and system for backside unlayering a semiconductor device to expose FEOL semiconductor features of the device for subsequent electrical and/or physical probing. A window is formed within a backside substrate layer of the semiconductor. A collimated ion plas...
08/09/2011
7371689Backside unlayering of MOSFET devices for electrical and physical characterization
A method and system for backside unlayering a semiconductor device to expose FEOL semiconductor features of the device for subsequent electrical and/or physical probing. A window is formed within a backside substrate layer of the semiconductor. A collimated ion plas...
05/13/2008
7316764System and method for performing sputter etching using independent ion and electron sources and a substrate biased with an a-symmetric bi-polar DC pulse signal
A system and method for performing sputter etching includes an ion source that generates an ion current that is directed at a substrate and an electron source that generates an electron current directed at the substrate. Biasing circuitry biases the substrate with a...
01/08/2008
7309549Method for quartz bump defect repair with less substrate damage
A method for minimizing damage to a substrate while repairing a defect in a phase shifting mask for an integrated circuit comprising locating a bump defect in a phase shifting mask, depositing a first layer of protective coating to an upper surface of the bump defec...
12/18/2007
7288173Ion beam processing system and ion beam processing method
An ion beam processing system emitting an ion beam at a workpiece to process the workpiece, provided with an electrode for applying an electric field to the workpiece, the potential of the electrode being made 0V or a negative potential, and a cover insulated from t...
10/30/2007
7276689Apparatus for trapping uncharged multi-pole particles
Apparatus and method for trapping uncharged multi-pole particles comprises a bound cavity for receiving the particles, and a multiplicity of electrodes coupled to the cavity for producing an electric field in the cavity. In a preferred embodiment, the electrodes are...
10/02/2007
7264741Coater having substrate cleaning device and coating deposition methods employing such coater
A coater having a substrate cleaning device is disclosed. Also disclosed are methods of processing substrates in a coater equipped with a substrate cleaning device. The substrate cleaning device comprises an ion gun (i.e., an ion source) that is positioned beneath a...
09/04/2007
7241360Method and apparatus for neutralization of ion beam using AC ion source
There is provided by this invention a unique ion source for depositing thin films on a substrate in a vacuum chamber that neutralizes the positive electric charges that develop on the substrate and vacuum chamber apparatus that may cause arcing and degradation of th...
07/10/2007
7144484Ion mill shutter system
A method for producing magneto resistive heads includes the steps of positioning at least two magneto resistive elements in spaced relation to one another and placing the at least two magneto resistive elements in an ion milling environment where material is removed...
12/05/2006
7132673Device and method for milling of material using ions
A milling device is disclosed for the preparation of microscopy specimens or other surface science applications through the use of ion bombardment. The device provides the ability to utilize both gross and fine modification of the specimen surface through the use of...
11/07/2006
7129484Method for pattern recognition in energized charge particle beam wafer/slider inspection/measurement systems in presence of electrical charge
To account for changing image contrast due to wafer/slider/mask charging in e-beam or ion beam wafer/slider/mask inspection or measurement tools, which could lead to false pattern recognition comparison and result in coordination verification failures, if a site of ...
10/31/2006
7092206Magnetic head with magnetic layers of differing widths and third pole with reduced thickness
A magnetic head includes a magnetic write structure having a first magnetic layer having a first pole, a second magnetic layer having a second pole spaced apart from the first pole, and a third magnetic layer having a third pole contacting the second pole. The third...
08/15/2006
7056809Method for ion treating a semiconductor material for subsequent bonding
The invention relates to a manufacturing process of detachable substrates, the said process comprising a surface condition adjustment treatment of at least one of two layers of material, followed by the reversible bonding of the surfaces of the two layers to make th...
06/06/2006
7056416Atmospheric pressure plasma processing method and apparatus
Provided is a plasma processing method for generating microplasma in a space of a microplasma source arranged in the vicinity of an object to be processed by supplying gas to the space and supplying electric power to a member located in the vicinity of the space, ma...
06/06/2006
7056825Method for manufacturing a semiconductor device that includes plasma treating an insulating film with a mixture of helium and argon gases
In a method for manufacturing a semiconductor device having a multi-layer insulating film, a first insulating film is formed as one layer of the multi-layer insulating film, and a plasma treatment is performed on the surface of the first insulating film in an ambien...
06/06/2006
7041202Timing apparatus and method to selectively bias during sputtering
A system and method for sputtering using a plurality of different bias voltages, a plurality of target-cathodes that can be powered at different voltages disposed along said path of travel, and a controller configured to selectively vary the target-cathode voltage a...
05/09/2006
7015146Method of processing backside unlayering of MOSFET devices for electrical and physical characterization including a collimated ion plasma
A method and system for backside unlayering a semiconductor device to expose FEOL semiconductor features of the device for subsequent electrical and/or physical probing. A window is formed within a backside substrate layer of the semiconductor. A collimated ion plas...
03/21/2006
6987067Semiconductor copper line cutting method
A method of repairing a semiconductor chip containing copper is taught, whereby copper is selectively removed from the chip. The method involves processing the chip inside a chamber in which the chip is exposed to various gases and an energy source, such as a focuse...
01/17/2006
6979389Micro-actuation apparatus for head ABS planarity (PTR) control during slider machining
An apparatus and method of machining sliders to obtain the optimum PTR for each slider. An array of MEMS devices configured for angular actuation are provided, and a slider is placed in each MEMS device of the array. The ion milling of the sliders is controlled indi...
12/27/2005
6977376Method of prevention charging, and apparatus for charged particle beam using the same
An apparatus for a charged particle beam has a charged particle source; a charged particle optical system for focusing and deflecting a charged particle beam emitted from the charged particle source; a detector for detecting secondary particles emitted from a sample...
12/20/2005
6949756Shaped and low density focused ion beams
A method and apparatus for providing a shaped ion beam having low current density and sharp edges. The low current density and sharp edges eliminate the problem of overmilling, while permitting rapid ion beam processing. One method of producing the shaped beam is by...
09/27/2005
6933081Method for quartz bump defect repair with less substrate damage
A method for minimizing damage to a substrate while repairing a defect in a phase shifting mask for an integrated circuit comprising locating a bump defect in a phase shifting mask, depositing a first layer of protective coating to an upper surface of the bump defec...
08/23/2005
6929721Ion beam modification of residual stress gradients in thin film polycrystalline silicon membranes
Method and apparatus for reducing the curvature of a micromachined structure having lamella (12). Surface treatment by an ion beam (30) of the lamella (12) such as by sputtering removes regions of stress allowing the lamella (12) to retur...
08/16/2005
6922118Micro electrical mechanical system (MEMS) tuning using focused ion beams
A method for tuning an electro-mechanical device such as a MEMS device is disclosed. The method comprises operating a MEMS device in a depressurized system and using FIB micromachining to remove a portion of the MEMS device. Additionally, a method for tuning a plura...
07/26/2005
6809066Ion texturing methods and articles
Ion texturing methods and articles are disclosed. ...
10/26/2004
6805779Plasma generation using multi-step ionization
The present invention relates to a plasma generator that generates a plasma with a multi-step ionization process. The plasma generator includes an excited atom source that generates excited atoms from ground state atoms supplied by a feed gas source. A plasma chambe...
10/19/2004
6773557System for frequency adjustment of piezoelectric resonators by dual-track ion etching
System for frequency adjustment of piezoelectric resonators by ion etching in vacuum, based on arranging the resonators in rows and columns on a tray that can be moved to simultaneously expose two rows of resonators to the two straight-track portions of an ion gun h...
08/10/2004
6768079Susceptor with built-in plasma generation electrode and manufacturing method therefor
The invention provides a susceptor with a built-in plasma generation electrode that can make the throughput by a range of plasma processing of a plate specimen uniform, and that has excellent plasma resistance, thermal conductivity and durability, and a manufacturin...
07/27/2004
6761803Large area silicon cone arrays fabrication and cone based nanostructure modification
A method and an apparatus have been developed to fabricate large area uniform silicon cone arrays using different kinds of ion-beam sputtering methods. The apparatus includes silicon substrate as the silicon source, and metal foils are used as catalyst. Methods of s...
07/13/2004
6758947Damage-free sculptured coating deposition
We disclose a method of applying a sculptured layer of material on a semiconductor feature surface using ion deposition sputtering, wherein a surface onto which the sculptured layer is applied is protected to resist erosion and contamination by impacting ions of a d...
07/06/2004
6676989Method and system for improving the effectiveness of medical stents by the application of gas cluster ion beam technology
Numerous studies suggest that the current popular designs of coronary stents are functionally equivalent and suffer a 16 to 22 percent rate of restenosis. Although the use of coronary stents is growing, the benefits of their use remain controversial in ce...
01/13/2004
6641705Apparatus and method for reducing differential sputter rates
A charged particle beam uniformly removes material, particularly crystalline material, from an area of a target by compensating for or altering the crystal orientation or structure of the material to be removed. The invention is particularly suited for FI...
11/04/2003
6565720Substrate removal as a function of sputtered ions
Substrate removal from a semiconductor chip having silicon-on-oxide (SOI) structure is enhanced via a method and system that provide a control for the removal process. According to an example embodiment of the present invention, a portion of substrate is ...
05/20/2003
6537606System and method for improving thin films by gas cluster ion beam processing
The present invention provides apparatus and methods to carry out the task of both reducing the surface roughness (smoothing) and improving the thickness uniformity of, preferably, but not limited thereto, the top silicon film of a silicon-on-insulator (S...
03/25/2003
6521902Process for minimizing electrostatic damage and pole tip recession of magnetoresistive magnetic recording head during pole tip trimming by focused ion beam milling
The improved method for trimming a magnetic head utilizing a FIB tool includes a step of aligning the FIB tool milling boxes without imaging critical pole tip components and structure. The method includes the creation of an alignment box that is disposed ...
02/18/2003
6511575Treatment apparatus and method utilizing negative hydrogen ion
In order to eliminate a contact hole of a semiconductor substrate, a polymer dreg after ashing of all inside of a via hole is conducted, or an oxide layer on a barrier metal surface, hydrogen gas is changed to a hydrogen radical, the radical is primarily ...
01/28/2003
6491800Method and system for improving the effectiveness of artificial hip joints by the application of gas cluster ion beam technology
The application of gas cluster ion beam (GCIB) technology in order to modify the surface of a surgical implant such as the components of an artificial hip joint, thereby substantially reducing wear debris and osteolysis complications is disclosed. The app...
12/10/2002
6402882Device and method for ion beam etching using space-time detection
The invention concerns a device and a method for ion beam etching for producing an etched surface (2) on a semiconductor (1) or insulant The device comprises a positive ion source (20), means for guiding (23) an ion beam (42), a system for detecting the s...
06/11/2002
6391215Diamond marking
An information mark invisible to the naked eye is applied to the polished facet of a diamond gemstone by coating the diamond gemstone surface with an electrically conductive layer so as to prevent the diamond becoming charged, forming the mark with a focu...
05/21/2002
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