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| Number | Title | Issue Date |
| 7862694 | Composite coating device and method of forming overcoat on magnetic head using the same A composite coating device includes first to third processing chambers. The first processing chamber performs an ion beam etching as a pretreatment process in which an ion beam is irradiated on a surface of a magnetic head at a predetermined angle and the surface is... | 01/04/2011 |
| 7422664 | Method for plasma ignition A method for igniting a plasma in a semiconductor process chamber is provided herein. In one embodiment, a method for igniting a plasma in a semiconductor substrate process chamber having an electrically isolated anode, wherein the plasma has failed to ignite upon a... | 09/09/2008 |
| 7413639 | Energy and media connection for a coating installation comprising several chambers The invention relates to an energy and media connection module for coating installations. Said module serves for supplying with cooling water, compressed air, process gases, signal, control and cathode power. It can be moved from one coating chamber to another coati... | 08/19/2008 |
| 7347901 | Thermally zoned substrate holder assembly A thermally zoned substrate holder including a substantially cylindrical base having top and bottom surfaces configured to support a substrate. A plurality of temperature control elements are disposed within the base. An insulator thermally separates the temperature... | 03/25/2008 |
| 7294283 | Penning discharge plasma source The preferred embodiments described herein provide a Penning discharge plasma source. The magnetic and electric field arrangement, similar to a Penning discharge, effectively traps the electron Hall current in a region between two surfaces. When a substrate (10 | 11/13/2007 |
| 7288173 | Ion beam processing system and ion beam processing method An ion beam processing system emitting an ion beam at a workpiece to process the workpiece, provided with an electrode for applying an electric field to the workpiece, the potential of the electrode being made 0V or a negative potential, and a cover insulated from t... | 10/30/2007 |
| 7276140 | Plasma accelerating apparatus for semiconductor substrate processing and plasma processing system having the same A plasma accelerating apparatus and a plasma processing system having the same are provided. The apparatus includes a circular channel comprising an inner wall, an outer wall, and an end wall connected to an end of the inner wall and the outer wall to form an outlet... | 10/02/2007 |
| 7270729 | System for, and method of, etching a surface on a wafer First and second electrodes and magnets between the electrodes define an enclosure. The first electrode is biased at a high voltage to produce a high intensity electrical field. The second electrode is biased at a low negative voltage by a low alternating voltage to... | 09/18/2007 |
| 7256134 | Selective etching of carbon-doped low-k dielectrics The present invention includes a process for selectively etching a low-k dielectric material formed on a substrate using a plasma of a gas mixture in a plasma etch chamber. The gas mixture comprises a fluorine-rich fluorocarbon or hydrofluorocarbon gas, a nitrogen-c... | 08/14/2007 |
| 7247252 | Method of avoiding plasma arcing during RIE etching A method for avoiding plasma arcing during a reactive ion etching (RIE) process including providing a semiconductor wafer having a process surface for depositing a dielectric insulating layer; depositing at least a portion of a dielectric insulating layer to form a ... | 07/24/2007 |
| 7244344 | Physical vapor deposition plasma reactor with VHF source power applied through the workpiece A physical vapor deposition plasma reactor includes a vacuum chamber including a sidewall, a ceiling and a wafer support pedestal near a floor of the chamber, and a vacuum pump coupled to the chamber, a process gas inlet coupled to the chamber and a process gas sour... | 07/17/2007 |
| 7235137 | Conductor treating single-wafer type treating device and method for semi-conductor treating A single-substrate processing apparatus (20) has a worktable (40) disposed in a process chamber (24), which accommodates a target substrate (W). The worktable (40) has a thermally conductive mount surface (41) to place the target s... | 06/26/2007 |
| 7176469 | Negative ion source with external RF antenna A radio frequency (RF) driven plasma ion source has an external RF antenna, i.e. the RF antenna is positioned outside the plasma generating chamber rather than inside. The RF antenna is typically formed of a small diameter metal tube coated with an insulator. An ext... | 02/13/2007 |
| 7166233 | Pulsed plasma processing method and apparatus In a method for performing a plasma-assisted treatment on a substrate in a reactor chamber by: introducing at least one process gas into the reactor chamber; and creating a plasma within the reactor chamber by establishing an RF electromagnetic field within the cham... | 01/23/2007 |
| 7104217 | Plasma processing apparatus The present invention provides a plasma processing apparatus having an electrode plate arranging therein, an upper electrode to which a dielectric member or a cavity portion is provided, a dimension or a dielectric constant of which is determined in such a manner th... | 09/12/2006 |
| 7084369 | Harmonic multiplexer A method and apparatus for maintaining a plasma in a plasma region, by supplying RF power at a fundamental frequency to the plasma region together with a gas in order to create an RF electromagnetic field which interacts with the gas to create a plasma that contains... | 08/01/2006 |
| 6998097 | High pressure chemical vapor trapping system A high pressure trapping system is provided to collect chemical vapor by-products in successive stages through chemical reactions conducted at progressively colder temperatures. A hot trap receives chemical vapor exhaust and collects a first waste, typically a solid... | 02/14/2006 |
| 6991701 | Plasma treatment method and apparatus A plasma treatment method comprising exhausting a process chamber so as to decompress the process chamber, mounting a wafer on a suscepter, supplying a process gas to the wafer through a shower electrode, applying high frequency power, which has a first frequency f | 01/31/2006 |
| 6951821 | Processing system and method for chemically treating a substrate A processing system and method for chemically treating a substrate, wherein the processing system comprises a temperature controlled chemical treatment chamber, and an independently temperature controlled substrate holder for supporting a substrate for chemical trea... | 10/04/2005 |
| 6949174 | Milling apparatus A milling apparatus is provided in which temperature rise of a treatment-object in milling treatment, especially of the substrate thereof, is prevented. In the apparatus, ionization mechanism 2 comprises casing 20d having an opening at the cente... | 09/27/2005 |
| 6946053 | Plasma reactor This invention is a hardware modification which permits greater uniformity of etching to be achieved in a high-density-source plasma reactor (i.e., one which uses a remote source to generate a plasma, and which also uses high-frequency bias power on the wafer chuck)... | 09/20/2005 |
| 6939813 | Apparatus for improved low pressure inductively coupled high density plasma reactor A plasma reactor comprises an electromagnetic energy source coupled to a radiator through first and second variable impedance networks. The plasma reactor includes a chamber having a dielectric window that is proximate to the radiator. A shield is positioned between... | 09/06/2005 |
| 6915760 | Plasma processing apparatus The present invention provides a plasma processing apparatus having an electrode plate arranging therein, an upper electrode to which a dielectric member or a cavity portion is provided, a dimension or a dielectric constant of which is determined in such a manner th... | 07/12/2005 |
| 6896775 | High-power pulsed magnetically enhanced plasma processing Magnetically enhanced plasma processing methods and apparatus are described. A magnetically enhanced plasma processing apparatus according to the present invention includes an anode and a cathode that is positioned adjacent to the anode. An ionization source generat... | 05/24/2005 |
| 6887317 | Reduced friction lift pin A substrate support is provided that features a lift pin having at least one larger diameter shoulder section that forms a relief region between the lift pin and a guide hole disposed through a substrate support. The shoulder section minimizes contact between the su... | 05/03/2005 |
| 6777881 | Power supply apparatus for generating plasma A power supply apparatus for generating a plasma for supplying a high-frequency power to a plasma generating device which is a load. The power supply apparatus comprises: a DC power supply; a power conversion circuit which comprises an amplifier circuit of D-class c... | 08/17/2004 |
| 6773558 | Fluorine generator A fluorine generator includes a vacuum chamber filled with a working gas. An r-f antenna is positioned outside the chamber across a dielectric window from a potassium fluoride (KF) source located in the chamber. The r-f antenna radiates through the window to heat th... | 08/10/2004 |
| 6756737 | Plasma processing apparatus and method The main purpose of the present invention is to suppress deposition of byproducts on an inner wall of a vacuum chamber during wafer processing using plasma generated by an inductive coupling antenna and an electrostatic capacitive coupling antenna which are connecte... | 06/29/2004 |
| 6740207 | Electric supply unit and method for reducing arcing during sputtering Sparking is suppressed during high-frequency sputtering by a high-frequency generator (5) which has a controlled switching unit (13) that is connected upstream in relation to the output of the generator. A high-frequency supply signal that is generated... | 05/25/2004 |
| 6736931 | Inductively coupled RF plasma reactor and plasma chamber enclosure structure therefor A plasma chamber enclosure structure for use in an RF plasma reactor. The plasma chamber enclosure structure being a single-wall dielectric enclosure structure of an inverted cup-shape configuration and having ceiling with an interior surface of substantially flat c... | 05/18/2004 |
| 6679981 | Inductive plasma loop enhancing magnetron sputtering A plasma reaction chamber, particularly a DC magnetron sputter reactor, in which the plasma density and the ionization fraction of the plasma is increased by a plasma inductive loop passing through the processing space. A tube has its two ends connected t... | 01/20/2004 |
| 6631336 | Nondestructive method of quality control of high-voltage systems and device for use of the method A method and device applicable to HV generators and X-ray tubes, and a computer program and support for the program. In the method a determination is made of a scale of values representing the energy of the radio-frequency spectrum transmitted by radio wa... | 10/07/2003 |
| 6562190 | System, apparatus, and method for processing wafer using single frequency RF power in plasma processing chamber The present invention provides a system, apparatus, and method for processing a wafer using a single frequency RF power in a plasma processing chamber. The plasma processing system includes a modulated RF power generator, a plasma processing chamber, and ... | 05/13/2003 |
| 6554979 | Method and apparatus for bias deposition in a modulating electric field The present invention provides a method and apparatus for achieving conformal step coverage of one or more materials on a substrate using sputtered ionized material. In one embodiment, a chamber having one or more current return plates, a support member, ... | 04/29/2003 |
| 6511575 | Treatment apparatus and method utilizing negative hydrogen ion In order to eliminate a contact hole of a semiconductor substrate, a polymer dreg after ashing of all inside of a via hole is conducted, or an oxide layer on a barrier metal surface, hydrogen gas is changed to a hydrogen radical, the radical is primarily ... | 01/28/2003 |
| 6454898 | Inductively coupled RF Plasma reactor having an overhead solenoidal antenna and modular confinement magnet liners In accordance with a first aspect of the invention, a plasma reactor having a chamber for containing a plasma and a passageway communicating with the chamber is enhanced with a first removable plasma confinement magnet module placed adjacent the passagewa... | 09/24/2002 |
| 6444085 | Inductively coupled RF plasma reactor having an antenna adjacent a window electrode The invention is embodied in an inductively coupled RF plasma reactor including a reactor chamber enclosure defining a plasma reactor chamber and a support for holding a workpiece inside the chamber, a non-planar inductive antenna adjacent the reactor cha... | 09/03/2002 |
| 6436253 | Sputter etching chamber with improved uniformity The uniformity of material removal, as well as contamination due to deposited particulate matter, has been reduced in single wafer sputter-etchers by providing an improved gas baffle. Said gas baffle presents a smooth surface to the incoming sputtering ga... | 08/20/2002 |
| 6432260 | Inductively coupled ring-plasma source apparatus for processing gases and materials and method thereof There is provided by this invention a novel inductively coupled plasma source apparatus that utilizes a transformer to induce closed path secondary plasma currents in a hollow metal housing that is directly cooled by a fluid. This plasma source apparatus ... | 08/13/2002 |
| 6422172 | Plasma processing apparatus and plasma processing method A plasma processing apparatus has plasma generating means including a means for generating capacitive coupled discharge and a means for radiating electromagnetic waves, so that the energy state of electrons is independently controlled by a combination of ... | 07/23/2002 |
