Hands free towel carrying system
A hands free towel carrying system for coupling a towel to a user to prevent loss, theft or contamination.
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| Number | Title | Issue Date |
| 7419567 | Plasma processing apparatus and method A plasma processing apparatus includes a worktable in a process chamber to horizontally place a target substrate thereon. A plasma generation space is defined above and around the worktable within the process chamber. The plasma generation space includes a periphera... | 09/02/2008 |
| 7413639 | Energy and media connection for a coating installation comprising several chambers The invention relates to an energy and media connection module for coating installations. Said module serves for supplying with cooling water, compressed air, process gases, signal, control and cathode power. It can be moved from one coating chamber to another coati... | 08/19/2008 |
| 7331097 | Method of manufacturing a workpiece chuck A workpiece chuck includes an upper assembly on which can be mounted a flat workpiece such as a semiconductor wafer. A lower assembly is mountable to a base that supports the chuck. A non-constraining attachment means such as vacuum, springs or resilient washers app... | 02/19/2008 |
| 7300558 | Rapid cycle time gas burster An apparatus for rapidly establishing at least one preselected gas pressure in a process chamber comprising: (a) a chamber defining an interior space adapted to be maintained at a reduced pressure; and (b) a gas su... | 11/27/2007 |
| 7276140 | Plasma accelerating apparatus for semiconductor substrate processing and plasma processing system having the same A plasma accelerating apparatus and a plasma processing system having the same are provided. The apparatus includes a circular channel comprising an inner wall, an outer wall, and an end wall connected to an end of the inner wall and the outer wall to form an outlet... | 10/02/2007 |
| 7267724 | Thin-film disposition apparatus A dividing plate for a thin-film deposition apparatus divides the interior of the vacuum reaction chamber into a plasma discharge space and a film deposition process space, by fixing or connecting a plurality of laminated plates together by securely bonding them ove... | 09/11/2007 |
| 7244474 | Chemical vapor deposition plasma process using an ion shower grid A chemical vapor deposition process is carried out in a reactor chamber with an ion shower grid that divides the chamber into an upper ion generation region and a lower process region, the ion shower grid having plural orifices oriented in a non-parallel direction r... | 07/17/2007 |
| 7220937 | Plasma reactor with overhead RF source power electrode with low loss, low arcing tendency and low contamination A gas distribution ceiling electrode for use as a capacitive source power applicator and gas distribution showerhead in a plasma reactor includes a metal base and a process-compatible protective layer on the interior surface of he electrode having a dopant impurity ... | 05/22/2007 |
| 7214274 | Method and apparatus for thermally insulating adjacent temperature controlled processing chambers A dual chamber apparatus including a first chamber and a second chamber which is configured to be coupled to the first chamber at an interface. Each of the first chamber and the second chamber has a transfer opening located at the interface. An insulating plate is l... | 05/08/2007 |
| 7208047 | Apparatus and method for thermally isolating a heat chamber An apparatus through which a substrate may be transferred between a first chamber and a second chamber in which the first chamber is maintained at a high temperature relative to the ambient temperature of the second chamber. The apparatus comprises a passageway for ... | 04/24/2007 |
| 7196283 | Plasma reactor overhead source power electrode with low arcing tendency, cylindrical gas outlets and shaped surface An overhead gas distribution electrode forming at least a portion of the ceiling of a plasma reactor has a bottom surface facing a processing zone of the reactor. The electrode includes a gas supply manifold for receiving process gas at a supply pressure at a top po... | 03/27/2007 |
| 7193682 | Exposure apparatus and device manufacturing method An exposure apparatus for exposing a substrate. The apparatus includes an optical system being set at a reference temperature, for directing light to the substrate, an exposure chamber for storing the optical system in a vacuum ambience, and a load-lock chamber, dis... | 03/20/2007 |
| 7172675 | Observation window of plasma processing apparatus and plasma processing apparatus using the same An observation window airtightly installed at a wall of a processing room of a plasma processing apparatus includes a body having a through hole with an opening facing the processing room, a transparent member installed at a side of the body opposite to the processi... | 02/06/2007 |
| 7166233 | Pulsed plasma processing method and apparatus In a method for performing a plasma-assisted treatment on a substrate in a reactor chamber by: introducing at least one process gas into the reactor chamber; and creating a plasma within the reactor chamber by establishing an RF electromagnetic field within the cham... | 01/23/2007 |
| 7157375 | Methods of downstream microwave photoresist removal and via clean, particularly following Stop-On TiN etching A process for photoresist layer removal from a semiconductor wafer comprises exposing at relatively high temperature the wafer to an RIE-free microwave-energy-generated plasma of a primary gas mixture, the exposing causing photoresist removal such as by ashing. The ... | 01/02/2007 |
| 7147793 | Method of and apparatus for tailoring an etch profile An etch profile tailoring system (100), for use with an etching process carried out on a wafer (130), has a scavenging plate (170) with a baseline etch profile, and at least one etch profile tuning structure (such as a plug) (160) replace... | 12/12/2006 |
| 7129606 | Vacuuming motor and vacuuming apparatus In a vacuuming motor used by being attached to a peripheral edge of a motor attaching hole provided at a vacuum chamber, an end portion on a load side of a motor main body is attached with a reduction gear main body having an attaching flange fixed to the motor atta... | 10/31/2006 |
| 7104217 | Plasma processing apparatus The present invention provides a plasma processing apparatus having an electrode plate arranging therein, an upper electrode to which a dielectric member or a cavity portion is provided, a dimension or a dielectric constant of which is determined in such a manner th... | 09/12/2006 |
| 7056806 | Microfeature workpiece processing apparatus and methods for controlling deposition of materials on microfeature workpieces The present disclosure provides methods and apparatus useful in depositing materials on batches of microfeature workpieces. One implementation provides a method in which a quantity of a first precursor gas is introduced to an enclosure at a first enclosure pressure.... | 06/06/2006 |
| 6991701 | Plasma treatment method and apparatus A plasma treatment method comprising exhausting a process chamber so as to decompress the process chamber, mounting a wafer on a suscepter, supplying a process gas to the wafer through a shower electrode, applying high frequency power, which has a first frequency f | 01/31/2006 |
| 6915760 | Plasma processing apparatus The present invention provides a plasma processing apparatus having an electrode plate arranging therein, an upper electrode to which a dielectric member or a cavity portion is provided, a dimension or a dielectric constant of which is determined in such a manner th... | 07/12/2005 |
| 6913703 | Method of adjusting the thickness of an electrode in a plasma processing system A method of adjusting the relative thickness of an electrode assembly (10) in a plasma processing system (6) capable of supporting a plasma (20, 120) in a reactor chamber (16). The electrode assembly is arranged in the reactor chamber and... | 07/05/2005 |
| 6910441 | Pressure regulating system of plasma processing equipment Plasma processing equipment includes a process, a cover covering the top of the process chamber, a wafer chuck disposed in the process chamber, a pressure regulating system including a pressure regulating plate situated at the bottom surface of the cover, and an ele... | 06/28/2005 |
| 6896775 | High-power pulsed magnetically enhanced plasma processing Magnetically enhanced plasma processing methods and apparatus are described. A magnetically enhanced plasma processing apparatus according to the present invention includes an anode and a cathode that is positioned adjacent to the anode. An ionization source generat... | 05/24/2005 |
| 6887317 | Reduced friction lift pin A substrate support is provided that features a lift pin having at least one larger diameter shoulder section that forms a relief region between the lift pin and a guide hole disposed through a substrate support. The shoulder section minimizes contact between the su... | 05/03/2005 |
| 6884298 | Method and system for coating and developing A coating and developing treatment system for performing coating and developing treatment. A coating treatment unit is configured to form a resist film on a substrate. A developing treatment unit is configured to develop the substrate. A heating/cooling unit include... | 04/26/2005 |
| 6881295 | Air-tight vessel equipped with gas feeder uniformly supplying gaseous component around plural wafers A reactor of a chemical vapor deposition system is equipped with a gas feeder for blowing dopant gas to plural semiconductor wafers supported by a wafer boat at intervals, and the gas feeder has a gas passage gradually reduced in cross section and gas outlet holes e... | 04/19/2005 |
| 6818068 | Conveyor for treating hollow bodies comprising an advanced pressure distribution circuit Aconveyer for treating hollow bodies, comprising several identical treatment stations (12, 13) that process at least one hollow body, whereby the respective treatment station for a given treatment stage communicates with a pressure source via distribution mea... | 11/16/2004 |
| 6814837 | Controlled gas supply line apparatus and process for infilm and onfilm defect reduction According to one aspect of the disclosure, the present invention provides methods and arrangements for controlling supply process gas to a process chamber for use in the manufacturing industry. Methods include controlling the operation of a valve coupled to the supp... | 11/09/2004 |
| 6773558 | Fluorine generator A fluorine generator includes a vacuum chamber filled with a working gas. An r-f antenna is positioned outside the chamber across a dielectric window from a potassium fluoride (KF) source located in the chamber. The r-f antenna radiates through the window to heat th... | 08/10/2004 |
| 6764658 | Plasma generator A plasma generator includes several plasma sources distributed in an array for plasma treatment of surfaces. Each plasma source includes first and second conductive electrodes. Each second electrode has a gas passage defined therein, and one of the first electrodes ... | 07/20/2004 |
| 6736931 | Inductively coupled RF plasma reactor and plasma chamber enclosure structure therefor A plasma chamber enclosure structure for use in an RF plasma reactor. The plasma chamber enclosure structure being a single-wall dielectric enclosure structure of an inverted cup-shape configuration and having ceiling with an interior surface of substantially flat c... | 05/18/2004 |
| 6733621 | Venting apparatus and method for vacuum system A method and apparatus comprising a purge conduit and vent conduit attached to a turbo pump of a plasma etch chamber. The purge conduit may communicate with atmospheric air or with a nitrogen source or clean, dry air (CDA) source, and the vent conduit is fitted with... | 05/11/2004 |
| 6677712 | Gas distribution plate electrode for a plasma receptor The invention is embodied in a plasma reactor for processing a semiconductor wafer, the reactor having a gas distribution plate including a front plate in the chamber and a back plate on an external side of the front plate, the gas distribution plate comp... | 01/13/2004 |
| 6669987 | Method for vacuum treatment of workpieces and vacuum treatment facility A lock chamber (1) is isolated from the environment (U) by a lock-valve (3) and from a vacuum chamber configuration (7) by a lock valve (5). A turbo vacuum pump (13) acts upon the vacuum chamber configuration (7). An additional pump (9/15) is switchably (... | 12/30/2003 |
| 6620288 | Substrate treatment apparatus In the substrate treatment apparatus including substrate treatment chambers (301 and 303) and a buffer chamber (302) having an exhaust system (306b) independent of the substrate treatment chambers, connection tubes (304a and 304b) are provided between the... | 09/16/2003 |
| 6610180 | Substrate processing device and method A substrate processing device is provided in which an interior rotating body for a substrate holder, provided in the interior of a vacuum chamber, and an external rotating body, provided in the exterior of said vacuum chamber, are magnetically coupled, an... | 08/26/2003 |
| 6602353 | Method for nitriding-processing iron group series alloy substrate A processing method for nitriding an iron group series alloy substrate, or processing subject, containing an alloy element for forming nitride by plasma nitriding treatment including a passivated membrane removing treatment step. The passivated membrane r... | 08/05/2003 |
| 6554205 | Gas polishing method, gas polishing nozzle and polishing apparatus A gas jetting nozzle is used for etching an object to be etched by jetting etching gas onto the object from the gas jetting nozzle. A gas jetting pipe for jetting an etching gas and a suction pipe for discharging the jetted gas are provided to have a coax... | 04/29/2003 |
| 6464843 | Contamination controlling method and apparatus for a plasma processing chamber A plasma processing chamber includes a substrate holder and a member of silicon carbide such as a liner, focus ring, perforated baffle or a gas distribution plate, the member having an exposed surface adjacent the substrate holder and the exposed surface ... | 10/15/2002 |