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Class 204/298.2 - Moving magnetic field or target


Subclass of Class 204 - Chemistry: electrical and wave energy
Definition: Apparatus including means for mechanically moving or electrically
No. of patents: 252
Last issue date: 03/20/2012


1              
NumberTitleIssue Date
8137519Sputtering cathode, sputtering apparatus provided with sputtering cathode, film-forming method, and method for manufacturing electronic device
The present invention provides a sputtering cathode whereby it is possible to increase the degree of freedom to adjust a distance between a target and a magnet unit. A sputtering cathode in accordance with one embodiment of the present invention includes a plurality...
03/20/2012
8021527Coaxial shafts for radial positioning of rotating magnetron
A magnetron actuator for moving a magnetron in a nearly arbitrary radial and azimuthal path in the back of a target in a plasma sputter reactor. The magnetron includes two coaxial rotary shafts extending along the chamber central axis and coupled to two independentl...
09/20/2011
8016985Magnetron sputtering apparatus and method for manufacturing semiconductor device
A magnetron sputtering apparatus includes: a target provided in a sputtering chamber; a susceptor opposed to the target; a high-frequency power supply connected to the susceptor; a plate provided outside the sputtering chamber and coaxial with a central axis of the ...
09/13/2011
7935232Sputtering apparatus and method, and sputtering control program
To provide a sputtering apparatus and method, and a sputtering control program which are configured simply and can secure the uniformity of the film thickness from the beginning to the end of the use of a target. There are provided: a target 15 dispose...
05/03/2011
7879210Partially suspended rolling magnetron
A magnetron scanning and support mechanism in which the magnetron is partially supported from an overhead scanning mechanism through multiple springs coupled to different horizontal locations on the magnetron and partially supported from below at multiple locations ...
02/01/2011
7807030Small scanned magentron
A small magnet assembly having a magnet assembly of area less than 10% of the target area, is scanned in a retrograde planetary or epicyclic path about the back of a target being plasma sputtered including an orbital rotation about the center axis of the target and ...
10/05/2010
7686928Pressure switched dual magnetron
A dual magnetron for plasma sputtering in which two distinctly different magnetrons are mounted on a common plate rotating about a central axis in back of a target. At least one of the magnetrons is switched on and off by changes in chamber pressure or target power ...
03/30/2010
7682495Oscillating magnet in sputtering system
A processing system is described for depositing materials on multiple workpieces (wafers, display panels, or any other workpieces) at a time in a vacuum chamber. Multiple targets, of the same or different materials, may concurrently deposit material on the wafers as...
03/23/2010
7674360Mechanism for varying the spacing between sputter magnetron and target
A lift mechanism for and a corresponding use of a magnetron in a plasma sputter reactor. A magnetron rotating about the target axis is controllably lifted away from the back of the target to compensate for sputter erosion, thereby maintaining a constant magnetic fie...
03/09/2010
7588669Single-process-chamber deposition system
A deposition system includes a process chamber, a workpiece holder for holding the workpiece within the process chamber, a first target comprising a first material, a second target comprising a second material, a single magnet assembly disposed that can scan across ...
09/15/2009
7513982Two dimensional magnetron scanning for flat panel sputtering
A generally rectangular magnetron placed at the back of a rectangular target to intensify the plasma in a sputter reactor configured for sputtering target material onto a rectangular panel. The magnetron has a size only somewhat less than that of the target and is s...
04/07/2009
7399385Alternating current rotatable sputter cathode
The present invention is an alternating current rotary sputter cathode in a vacuum chamber. The apparatus includes a housing containing a vacuum and a cathode disposed therein. A drive shaft is rotatably mounted in the bearing housing. A rotary vacuum seal is locate...
07/15/2008
7378001Magnetron sputtering
A magnetron sputtering apparatus has a controller for selectively releasing the spread of plasma on a substrate on a support. The controller can also contain the plasma when the substrate is to be coated with the target material. This enables cleaning of the target ...
05/27/2008
7368041Method for controlling plasma density or the distribution thereof
Method for manufacturing magnetron sputter-coated workpieces includes placing a substrate adjacent a magnetron source having a target cathode, generating above the target cathode, at least one plasma loop by an electron trap established by generating a magnetic fiel...
05/06/2008
7351596Method and system for operating a physical vapor deposition process
A method for fabricating semiconductor wafers using physical vapor deposition. The method includes maintaining a substrate on a susceptor in a chamber. The substrate has a face positioned within a vicinity of a target material, which is within the chamber. The targe...
04/01/2008
7347919Sputter source, sputtering device, and sputtering method
According to the invention, when targets are sputtered, each of them moves with respect to a substrate; and therefore, the entire area of the substrate is opposed to the targets during sputtering, so that a film of homogeneous quality can be formed on the surface of...
03/25/2008
7335282Sputtering using an unbalanced magnetron
A sputtering process and magnetron especially advantageous for low-pressure plasma sputtering or sustained self-sputtering, in which the magnetron has a reduced area but full target coverage. The magnetron includes an outer pole face surrounding an inner pole face w...
02/26/2008
7268076Apparatus and method for metal plasma vapor deposition and re-sputter with source and bias power frequencies applied through the workpiece
Physical vapor deposition and re-sputtering of a barrier layer in an integrated circuit is performed by providing a metal target near a ceiling of the chamber and a wafer support pedestal facing the target near a floor of the chamber. A process gas is introduced int...
09/11/2007
7252189Method for aligning laminated electronic parts in desired orientation and alignment device therefor
A method and device for aligning orientation of laminated planer electrodes in laminated electronic parts when the parts are conveyed on a transport passage of a parts feeder. A magnetic field generation unit is disposed beside and outside of the parts feeder for ap...
08/07/2007
7244344Physical vapor deposition plasma reactor with VHF source power applied through the workpiece
A physical vapor deposition plasma reactor includes a vacuum chamber including a sidewall, a ceiling and a wafer support pedestal near a floor of the chamber, and a vacuum pump coupled to the chamber, a process gas inlet coupled to the chamber and a process gas sour...
07/17/2007
7244669Patterning of devices
A method for forming an organic or partly organic switching device, comprising: depositing layers of conducting, semiconducting, insulating, or surface modifying layers by solution processing and direct printing; and defining high-resolution patterns of these layers...
07/17/2007
7223322Moving magnetic/cathode arrangement and method
A magnetron sputtering electrode for use with a magnetron sputtering device, wherein the magnetron sputtering electrode comprises a cathode body, a drive unit coupled to the cathode body, a target received by the cathode body, and a closed loop magnet arrangement re...
05/29/2007
7214619Method for forming a barrier layer in an integrated circuit in a plasma with source and bias power frequencies applied through the workpiece
A barrier layer is formed in an integrated circuit by providing a metal target near a ceiling of the chamber and a wafer support pedestal facing the target near a floor of the chamber. A process gas is introduced into the vacuum chamber. A target-sputtering plasma i...
05/08/2007
7208878Method of manufacturing a rotation-magnetron-in-magnetron (RMIM) electrode
An RMIM electrode, a method for manufacturing the RMIM electrode, and a sputtering apparatus using the RMIM electrode, wherein the RMIM electrode includes a magnet unit including a cylinder-shaped magnet located at a center of the magnet unit and a plurality of ring...
04/24/2007
7186319Multi-track magnetron exhibiting more uniform deposition and reduced rotational asymmetry
A multi-track magnetron having a convolute shape and asymmetric about the target center about which it rotates. A plasma track is formed as a closed loop between opposed inner and outer magnetic poles, preferably as two or three radially arranged and spirally shaped...
03/06/2007
7182843Rotating sputtering magnetron
The magnet arrangement and resulting rotating sputtering magnetron design of an embodiment provides magnetic flux density and distribution to penetrate thick production ferrous targets. Further, the magnetic field shape improves target life by more uniformly removin...
02/27/2007
7179351Methods and apparatus for magnetron sputtering
In one embodiment, a magnetron sputtering apparatus forms a closed plasma loop and an open plasma loop within the closed plasma loop. The open plasma loop allows for relatively uniform erosion on the face of a target by broadening the sputtered area of the target. T...
02/20/2007
7169271Magnetron executing planetary motion adjacent a sputtering target
A small magnet assembly is scanned in a retrograde planetary or epicyclic path about the back of a target being plasma sputtered including an orbital rotation about the center axis of the target and a planetary rotation about another axis rotating about the target c...
01/30/2007
7166199Magnetron sputtering systems including anodic gas distribution systems
The present invention provides a magnetron sputtering system using a gas distribution system which also serves as a source of anodic charge to generate plasma field. The sputtering system is comprised of a vacuum chamber, a cathode target of sputterable material, a ...
01/23/2007
7156961Sputtering apparatus and film forming method
The present invention is to provide a sputtering apparatus and a thin film formation method which make it possible to form respective layers of a multilayer film having a clean interface at a optimum temperature, or which make it possible to continuously carry out t...
01/02/2007
7157123Plasma-enhanced film deposition
Methods and equipment for depositing films. In certain embodiments, there is provided a deposition chamber having a substrate-coating region and an electrode-cleaning region. In these embodiments, an electrode is positioned in the deposition chamber and has an inter...
01/02/2007
7138343Method of producing a substrate with a surface treated by a vacuum treatment process, use of said method for the production of coated workpieces and plasma treatment chamber
In order to produce substrate surfaces with a given two-dimensional surface distribution arising from a treatment using a vacuum treatment process, an inhomogeneous plasma (5) with a density distribution is generated and moved relative to the substrate (9
11/21/2006
7119489Rotation-magnetron-in-magnetron (RMIM) electrode, method of manufacturing the RMIM electrode, and sputtering apparatus including the RMIM electrode
An RMIM electrode, a method for manufacturing the RMIM electrode, and a sputtering apparatus using the RMIM electrode, wherein the RMIM electrode includes a magnet unit including a cylinder-shaped magnet located at a center of the magnet unit and a plurality of ring...
10/10/2006
7115194Magnetron sputtering apparatus
A magnetron sputtering apparatus 1 is composed of a vacuum chamber 2, a target 3, a cathode 4 that holds the target 3 in the vacuum chamber 2, a substrate 5, an anode 6 that holds the substrate 5 and is ...
10/03/2006
7101466Linear sweeping magnetron sputtering cathode and scanning in-line system for arc-free reactive deposition and high target utilization
A sweeping linear magnetron is described. The magnetron has a cathode backing plate, a drive housing attached to the cathode backing plate and a motor held in the drive housing. The motor drives a yoke positioned within a cut-out in the backing plate. The yoke has a...
09/05/2006
7094322Use of self-sustained atmospheric pressure plasma for the scattering and absorption of electromagnetic radiation
A self-sustained atmospheric pressure system for absorbing or scattering electromagnetic waves using a capillary discharge electrode configuration plasma panel and a method for using the same. Of particular interest is the application of this system to vary the leve...
08/22/2006
7081710Elementary plasma source and plasma generation apparatus using the same
An elementary plasma source for generating plasma is provided. In the elementary plasma source, first and second magnets are shaped like a hollow cylinder, and the second magnet surrounds the first magnet, for forming a magnetic trap between the first and second mag...
07/25/2006
7067034Method and apparatus for plasma forming inner magnetic bucket to control a volume of a plasma
A plasma confinement arrangement for controlling the volume of a plasma while processing a substrate inside a process chamber includes a chamber within which a plasma is both ignited and sustained for processing. The chamber is defined at least in part by a wall and...
06/27/2006
7059268Method, apparatus and magnet assembly for enhancing and localizing a capacitively coupled plasma
A magnetically enhanced plasma is produced with a permanent magnet assembly adjacent to a radio frequency (RF) biased wafer support electrode in a vacuum processing chamber of a semiconductor wafer processing apparatus. An annular peripheral region is provided on th...
06/13/2006
7052583Magnetron cathode and magnetron sputtering apparatus comprising the same
A magnetron cathode and a sputtering apparatus including the same are provided. The magnetron cathode includes three or more magnet units, each of which comprises a single magnet or a plurality of magnets having the same poles facing toward the same direction, where...
05/30/2006
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